Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
05/2013
05/16/2013WO2013071260A1 Mtj structure and integration scheme
05/16/2013WO2013069091A1 Tunnel magnetoresistive effect element and random access memory using same
05/16/2013US20130122609 Zr-SUBSTITUTED BaTiO3 FILMS
05/16/2013US20130119498 Memory system having thermally stable perpendicular magneto tunnel junction (mtj) and a method of manufacturing same
05/16/2013US20130119496 Semiconductor Magnetoresistive Random-access Memory (MRAM) Device and Manufacturing Method thereof
05/16/2013US20130119494 Mtj structure and integration scheme
05/16/2013DE102005002526B9 Wärmeunterstützte Magnetspeichervorrichtung mit gesteuerter Temperatur Heat-assisted magnetic memory device with controlled temperature
05/15/2013CN103107282A Method for improving giant magneto-impedance effect of materials
05/15/2013CN103107281A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/15/2013CN103107280A Magnetic resistance material
05/14/2013US8440330 Memory cell with radial barrier
05/10/2013WO2013065751A1 Spin oscillation device and manufacturing method for same
05/10/2013WO2013065531A1 Ion beam etching method for magnetic films and ion beam etching apparatus
05/10/2013WO2013065266A1 Magnetic sensor
05/09/2013US20130113058 Magnetic memory element, magnetic memory and manufacturing method of the same
05/08/2013DE10219880B4 Rotationssensor Rotation sensor
05/08/2013DE102012110492A1 Magnetsensor-Bauelement The magnetic sensor device
05/08/2013DE102012110488A1 Magnetsensor-Bauelement und Verfahren zu seiner Herstellung The magnetic sensor device and method for its preparation
05/08/2013CN103094470A Method for forming magnetoresistive element structure
05/08/2013CN101815953B Magneto-impedance element and magneto-impedance sensor
05/07/2013US8436438 Memory element and memory device
05/02/2013WO2013061160A2 Conductive networks on patterned substrates
05/01/2013CN202916428U Special-shaped endpoint coupling-based magnetoelectric device
05/01/2013CN103076577A Design and manufacture technology of sensor chip for detecting magnetic field and acceleration
05/01/2013CN101960631B Process for producing magnetoresistive element and apparatus for producing magnetoresistive element
04/2013
04/30/2013US8431255 Galvanomagnetic device and magnetic sensor
04/25/2013WO2013059706A1 Electrode apparatus and method of manufacturing electrodes
04/25/2013WO2013058044A1 Strongly correlated non-volatile memory device
04/25/2013WO2013057863A1 Magnetic sensor
04/25/2013DE102012020515A1 Stromsensor und Verfahren zur Detektion eines stromlosen Zustands Current sensor and method for detecting an electroless state
04/25/2013DE102011116545A1 Integrierte Magnetfeldmessvorrichtung Integrated magnetic field measuring device
04/24/2013EP2584304A1 Method for determining a distance and an integrated magnetic field measuring apparatus
04/24/2013CN103069602A Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy
04/24/2013CN103069570A Mram device and integration techniques compatible with logic integration
04/24/2013CN103069564A Magnetoresistive element and magnetic random-access memory
04/24/2013CN103069493A Magnetic memory cell
04/24/2013CN103066201A Method multi-field coupling preparation magnetoelectric composite
04/24/2013CN103066200A Forming method and forming device of magnetic tunnel junction with three-dimensional structure
04/24/2013CN103066199A Novel magnetic tunnel junction device and manufacture method thereof
04/24/2013CN103066198A Novel magnetic tunnel junction (MTJ) device and manufacturing method thereof
04/24/2013CN103066197A Apparatus having back-bias magnet and semiconductor chip element
04/24/2013CN103066098A Graphene Hoare integrated circuit and preparation method thereof
04/23/2013US8427140 Hall sensor
04/23/2013US8426936 Vertical Hall sensor and method of producing a vertical Hall sensor
04/18/2013US20130094284 Magnetoresistance effect element and magnetic memory
04/17/2013EP2581940A1 Oscillation element and method for manufacturing oscillation element
04/17/2013CN101910455B Substrate stage, sputtering apparatus provided with substrate stage, and film forming method
04/16/2013US8421171 Magnetic random access memory
04/16/2013US8420408 Semiconductor memory and manufacturing method thereof
04/10/2013CN103035836A Self-reference magnetic random access memory (mram) cell comprising ferrimagnetic layers
04/10/2013CN101911326B Memory cell and method of forming a magnetic tunnel junction (MTJ) of a memory cell
04/04/2013WO2013049811A1 Method for manufacturing and magnetic devices having double tunnel barriers
04/04/2013WO2013047213A1 Non-volatile resistance network aggregate and non-volatile logic gate having enhanced fault tolerance using same
04/04/2013US20130084653 Medium patterning method and associated apparatus
04/04/2013US20130082340 Apparatus having a back-bias magnet and a semiconductor chip element
04/04/2013DE102011114773A1 Vorrichtung mit einem Backbias-Magneten und einem Halbleiterchipelement A device with a back bias magnet and a semiconductor chip element
04/03/2013CN103022345A Tunneling magneto-resistance multilayer film material
04/03/2013CN103022344A Topological insulator structure
04/03/2013CN103022343A Self-spinning rectifying apparatus for enhancing surface plasma antenna coupling
04/03/2013CN103022342A Structure and method for a MRAM device with an oxygen absorbing cap layer
04/03/2013CN103022341A Topological insulator structure
04/03/2013CN103022340A Magnetoelectric composite material structure capable of controlling multiple resonant frequencies and manufacturing method thereof
04/03/2013CN103022071A Flexible storage and manufacture method
04/02/2013US8410893 Magnetic detector and method for manufacturing the same
03/2013
03/28/2013WO2013044190A1 Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device
03/28/2013WO2013042787A1 Organic itinerant magnetic compound, process for producing organic itinerant magnetic compound, magnet, spintronic element, and material for hydrogen refining
03/28/2013WO2013042336A1 Magnetic sensor
03/28/2013WO2013040859A1 Nano multilayer film, field effect tube, sensor, random accessory memory and preparation method
03/28/2013US20130078742 Enhancement of properties of thin film ferroelectric materials
03/28/2013US20130075845 Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device
03/28/2013US20130075842 Semiconductor device and method for fabricating the same
03/28/2013US20130075841 Semiconductor device and method for fabricating the same
03/28/2013DE102011083623A1 Thin layer component has substrate, primary electrode arranged on substrate, electrical insulation layer having open pores of preset diameter, magnetic layer and secondary electrode
03/27/2013CN103000805A Magnetic tunnel junction with an improved tunnel barrier
03/27/2013CN103000804A Method for producing quantized abnormal Hall effect
03/27/2013CN103000803A Electrical device
03/27/2013CN102995117A Preparation method of topological insulator structure
03/27/2013CN101994055B Composite magnetostrictive material and preparation method thereof
03/26/2013US8406040 Spin-torque based memory device using a magnesium oxide tunnel barrier
03/26/2013US8405134 Magnetic tunnel junction device
03/21/2013WO2013040072A1 Strain induced reduction of switching current in spintransfer torque switching devices
03/21/2013WO2013038994A1 Frequency converter
03/21/2013WO2013038993A1 Mixer having frequency selectivity
03/21/2013WO2013038992A1 Mixer
03/21/2013DE102012216390A1 Vertikale Hall-Sensoren Vertical Hall sensors
03/21/2013DE102012216388A1 Hall-sensoren mit erfassungsknoten mit signaleinprägung Hall sensors with gathering knot with signaleinprägung
03/21/2013DE102005002526B4 Wärmeunterstützte Magnetspeichervorrichtung mit gesteuerter Temperatur Heat-assisted magnetic memory device with controlled temperature
03/20/2013CN102986047A Magnetic storage element comprising a functional layer in the pinned layers and manufacturing method thereof
03/20/2013CN102983272A Memory device and method for manufacturing the same
03/20/2013CN102157680B Semiconductor device and method of manufacturing the same
03/19/2013US8400738 Magnetic element with dual magnetic moments
03/14/2013US20130065326 Method for manufacturing semiconductor device
03/14/2013DE112010005566T5 Magnetfeldwinkel-Messvorrichtung und Drehwinkel-Messvorrichtung, die diese verwendet Magnetic field angle-measuring device and angular position measuring device that uses this
03/14/2013DE102012216069A1 Magnetoresistive Spinventil-Schichtsysteme Magnetoresistive spin valve layer systems
03/13/2013EP2568305A1 Magnetic tunnel junction with an improved tunnel barrier
03/13/2013CN102971640A Microcomputer for detecting magnetic field, and method for detecting magnetic field
03/13/2013CN102969447A Method for forming conductive plug on surface of magnetic tunnel junction (MTJ)
03/13/2013CN102969446A Semiconductor chip package and method
03/13/2013CN101932912B Angle sensor, angle sensor manufacturing method, and angle detection device using the angle sensor
03/13/2013CN101517373B Physical quantity measuring apparatus and signal processing method thereof
1 ... 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 ... 121