H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof

Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
12/2013
12/12/2013	US20130330828 Miniaturized magnetic flow cytometry
12/11/2013	CN103443860A Methods of integrated shielding into MTJ device for MRAM
12/11/2013	CN102569643B Heterogeneous design method for optimizing embedded STT- RAM (Spin-Torque Transfer Random Access Memory) performances and hardware consumption
12/11/2013	CN102376871B Magnetic tunnel junction memory unit and manufacturing method thereof
12/11/2013	CN102017208B Stt magnetic tunnel junction architecture and integration
12/10/2013	CA2713337C Magnetic tunnel junction cell including multiple magnetic domains
12/05/2013	WO2013180277A1 Oscillator
12/05/2013	WO2013179575A1 Vacuum-processing apparatus, vacuum-processing method, and storage medium
12/05/2013	WO2013179574A1 Method for manufacturing layered film and vacuum-processing apparatus
12/05/2013	US20130322151 Ferromagnetic device providing high domain wall velocities
12/05/2013	US20130320468 Magnetic element with storage layer materials
12/05/2013	DE102012209232A1 Magnetfeldsensor Magnetic field sensor
12/04/2013	CN103427019A Magnetoresistance film and production method thereof
12/04/2013	CN103427018A Device with manganese oxide film adjustable and controllable in magnetic domain wall and magnetic domain wall adjusting and controlling method
12/04/2013	CN103427017A Magnetoresistive elements and memory devices including the same
12/04/2013	CN103424719A Magnetic vector sensor based on magnetic nano particles and manufacturing method of magnetic vector sensor
12/04/2013	CN101960630B Method of forming a magnetic tunnel junction structure
11/2013
11/28/2013	US20130313665 Magnetic Tunnel Junction Device Having Amorphous Buffer Layers That Are Magnetically Connected Together And That Have Perpendicular Magnetic Anisotropy
11/28/2013	US20130313623 Threshold gate and threshold logic array
11/28/2013	US20130313506 Magnetoresistive element and manufacturing method of the same
11/27/2013	CN103414176A Magnetic resistance current limiter
11/27/2013	CN102246327B Magnetoresistance effect element and magnetic memory cell and magnetic random access memory using same
11/27/2013	CN102007543B Recording method for magnetic memory device
11/21/2013	WO2013171977A1 Bridge circuit and magnetic sensor comprising same
11/21/2013	WO2013171947A1 Storage device, storage element
11/21/2013	US20130309784 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
11/21/2013	US20130307609 Hall Effect Device
11/21/2013	US20130307102 Magnetic devices having perpendicular magnetic tunnel junction
11/21/2013	US20130307101 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
11/20/2013	EP2665104A1 Magnetoresistive elements and memory devices including the same
11/20/2013	EP2664940A1 Magnetic sensor
11/20/2013	EP1917678B1 Magnetic devices and techniques for formation thereof
11/20/2013	CN103403215A Manufacturing apparatus
11/20/2013	CN103400935A Formation method of 3D magnetic sensor
11/20/2013	CN103400934A Formation method of 3D magnetic sensor
11/20/2013	CN103400679A Highly-doped ZnO:Co magnetic semiconductor film material and preparation method thereof
11/14/2013	WO2013170070A2 Spin transistors employing a piezoelectric layer and related memory, memory systems, and methods
11/14/2013	US20130302914 Embedded Magnetic Random Access Memory (MRAM)
11/14/2013	US20130302913 Storage element, method for manufacturing storage element, and memory
11/14/2013	US20130299930 Integrated magnetoresistive sensor, in particular three-axis magnetoresistive sensor and manufacturing method thereof
11/14/2013	US20130299929 Magnetoresistive element and magnetic memory
11/14/2013	US20130299880 Spin Transistors Employing a Piezoelectric Layer and Related Memory, Memory Systems, and Methods
11/14/2013	US20130299823 Magnetic Tunnel Junction for MRAM Applications
11/14/2013	US20130299786 Spin valves using organic spacers and spin-organic light-emitting structures using ferromagnetic electrodes
11/14/2013	DE112004000152B4 Magnetspeicher und Schreibstrom-Treiberschaltung The magnetic memory write current and driving circuit
11/13/2013	CN103392245A Writeable magnetic element
11/13/2013	CN102007542B Method of making record in magnetic memory device
11/07/2013	US20130295693 Semiconductor device and method for making semiconductor device
11/07/2013	US20130292785 Perpendicular magnetic random access memory (mram) device with a stable reference cell
11/07/2013	US20130292784 Magnetic Memory Element with Multi-Domain Storage Layer
11/06/2013	EP2660818A1 Stack with wide seed layer
11/06/2013	CN203277504U A spin valve device
11/06/2013	CN103383441A Digital spin valve magnetic field sensor and manufacturing technology thereof
11/05/2013	US8575711 Storage element and memory
11/05/2013	US8574729 Magnetic structure including two ferromagnetically coupled magnetic layers and method of manufacturing same
10/2013
10/31/2013	WO2013161769A1 Plasma processing method and plasma processing apparatus
10/31/2013	US20130288398 Method of manufacturing tunneling magnetoresistive element
10/31/2013	US20130288397 Magnetoresistive effect element, magnetic memory, and method of manufacturing magentoresistive effect element
10/31/2013	US20130288396 Embedded Magnetic Random Access Memory (MRAM)
10/31/2013	US20130288395 Magnetic tunnel junction device fabrication
10/31/2013	US20130288394 Magnetic memory and method of fabrication
10/31/2013	US20130288393 Techniques for patterning multilayer magnetic memory devices using ion implantation
10/31/2013	US20130288392 Method for Use in Making Electronic Devices Having Thin-Film Magnetic Components
10/31/2013	US20130286727 Spin torque transfer memory cell structures and methods
10/31/2013	US20130286723 Magnetic random access memory with field compensating layer and multi-level cell
10/31/2013	US20130285178 Magnetic Memory Device
10/31/2013	US20130285177 Magnetic memory and method of fabrication
10/31/2013	US20130285176 Magnetic body device and manufacturing method thereof
10/31/2013	US20130285008 Nanowires, method of fabrication the same and uses thereof
10/31/2013	DE102009015965B4 Hall-Effekt-Bauelement, Betriebsverfahren hierfür und Magneterfassungsverfahren Hall-effect device, operation method thereof, and magnetic detection method
10/30/2013	CN103378287A Magnetoresistive random access memory device and method of making same
10/30/2013	CN102509768B Fe3O4 (ferroferric oxide)/p-Si (p-type silicon) structure capable of regulating and controlling magneto-resistance effect with current and preparation method for same
10/30/2013	CN102313617B Micro-electronics pressure sensor and preparation process thereof
10/30/2013	CN102077377B System and method to fabricate magnetic random access memory
10/29/2013	US8570029 Metering apparatus for liquids and method for metering liquids
10/24/2013	WO2013112766A3 Method and device for estimating damage to a magnetic tunnel junction (mtj) element
10/24/2013	US20130279244 Hierarchical memory magnetoresistive random-access memory (mram) architecture
10/24/2013	US20130277782 Arrangements For An Integrated Sensor
10/24/2013	US20130277781 Thin-film Magnetoresistance Sensing Element, Combination Thereof, and Electronic Device Coupled to the Combination
10/24/2013	US20130277780 TMR Device with Low Magnetoresistive Free Layer
10/23/2013	EP2654095A1 Magnetic sensor and method of manufacturing magnetic sensor
10/23/2013	CN103367637A Multi-dimensional storage capable of simultaneously regulating and controlling electrical property and magnetism of dielectric layer
10/23/2013	CN103367632A Method for preparing spin valve magneto-resistance sensor material
10/23/2013	CN102593348B Information storage element with non-volatile electric field regulating magnetization intensity
10/23/2013	CN102097584B Magnetoresistance device
10/22/2013	US8565016 System having improved surface planarity for bit material deposition
10/17/2013	WO2013153986A1 Magnetic sensor
10/17/2013	WO2013153942A1 Magneto-resistance effect element and magnetic memory
10/17/2013	US20130270523 Free Layer with High Thermal Stability for Magnetic Device Applications by Insertion of a Boron Dusting Layer
10/16/2013	EP2650407A1 Perovskite manganese oxide thin film
10/16/2013	CN102623630B Silicon-based heterogeneous positive-negative (PN) structure geometrical giant magneto-resistance device and preparation method thereof
10/15/2013	US8558332 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
10/10/2013	US20130267043 Magnetic Field Sensors and Methods for Fabricating the Magnetic Field Sensors
10/10/2013	US20130265036 Magnetic field sensor having multiple sensing elements for misalignment detection and correction in current sensing and other applications
10/10/2013	US20130264667 Magnetic Field Sensors and Methods for Fabricating the Magnetic Field Sensors
10/10/2013	US20130264666 Two-axis magnetic field sensor having reduced compensation angle for zero offset
10/10/2013	DE102009038938B4 Verfahren zur Herstellung eines vertikalen Hall-Sensors Process for the preparation of a vertical Hall sensor
10/09/2013	CN103346254A Preparing method for multilayer magnetoelectric composite material
10/09/2013	CN102013454B Method of manufacturing nonvolatile memory device
10/08/2013	USRE44532 Method for manufacturing a transistor of a semiconductor memory device

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