Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
07/2011
07/20/2011CN102132434A Magnetoresistive element, method for manufacturing same, and storage medium used in the manufacturing method
07/20/2011CN102132168A Magnetic field detection element and signal transmission element
07/20/2011CN102129905A Semimetal magnetic material with high spin polarization
07/19/2011US7982275 Magnetic element having low saturation magnetization
07/14/2011WO2011085153A1 Method and structure for testing and calibrating magnetic field sensing device
07/14/2011US20110169114 Electronic devices utilizing spin torque transfer to flip magnetic orientation
07/14/2011US20110169112 Composite Hardmask Architecture and Method of Creating Non-Uniform Current Path for Spin Torque Driven Magnetic Tunnel Junction
07/14/2011DE102010000769A1 Sensorelement zur Magnetfeldmessung, Magnetfeld-Sensor und Verfahren zur Herstellung eines Sensorelements Sensor element for measuring magnetic fields, magnetic field sensor and method for manufacturing a sensor element
07/13/2011EP2343566A1 Magnetic field detection element and signal transmission element
07/13/2011EP2342767A1 Magnetic element utilizing protective sidewall passivation
07/13/2011EP2342714A1 Reducing spin pumping induced damping of a free layer of a memory device
07/13/2011CN1747060B Methods of operating magnetic random access memory device using spin injection and related devices
07/13/2011CN101202103B Data copying apparatus, data copying system, and data copying method
07/07/2011WO2011081203A1 Method for manufacturing a magnetoresistive element
07/07/2011WO2011081051A1 Magnetic memory cell and magnetic memory
07/06/2011CN102119455A Three-layer magnetic element, method for the production thereof, magnetic field sensor, magnetic memory, and magnetic logic gate using such an element
07/06/2011CN102119423A STT-MRAM bit cell having a rectangular bottom electrode plate
07/06/2011CN102119422A Symmetric STT-MARAM bit cell design
07/06/2011CN101273194B Variable reluctance position sensor
07/05/2011US7973376 Semiconductor device and method of manufacturing the same
06/2011
06/30/2011WO2011078776A1 Memory element with magneto-thermo-electronic control
06/30/2011WO2011078018A1 Magnetoresistive effect element, and magnetic random access memory using same
06/29/2011CN1777955B Methods for contracting conducting layers overlying magnetoelectronic elements of MRAM devices
06/29/2011CN102109585A Hall disc with four-end output and product thereof
06/29/2011CN101540337B Magnetic sensor and mobile information terminal apparatus
06/29/2011CN101288186B A magnetoresistive tunnel junction magnetic device and its application to MRAM
06/23/2011WO2011074488A1 Magnetic sensor
06/23/2011WO2011072498A1 Magnetoresistive thin film material with extremely high sensitivity and preparation method thereof
06/23/2011US20110151589 Production of a device comprising magnetic structures formed on one and the same substrate and having respective different magnetization orientations
06/23/2011US20110151587 Method of producing an integrated micromagnet sensor assembly
06/23/2011US20110147866 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
06/23/2011US20110147865 Integrated hybrid hall effect transducer
06/23/2011US20110147514 Apparatus and method for steering angle measurement of an aircraft landing gear and aircraft landing gear
06/22/2011CN1612263B Heating MRAM cells to ease state switching
06/22/2011CN1591673B Magnetic tunnel junction and memory device including the same
06/21/2011US7965077 Two-axis magnetic field sensor with multiple pinning directions
06/21/2011US7965076 Magnetic field orientation sensor
06/21/2011US7964924 Magnetoresistance effect device and magnetism sensor using the same
06/16/2011WO2011072058A2 Magnetic tunnel junction device
06/16/2011WO2011072050A1 Spin-transfer switching magnetic element utilizing a composite free layer comprising a superparamagnetic layer
06/16/2011WO2011071028A1 Method for processing laminated electrode
06/16/2011US20110141792 Read/write structures for a three dimensional memory
06/16/2011US20110140218 Memory Constructions Comprising Magnetic Materials
06/16/2011US20110139108 Control of a pre-spun starter
06/15/2011EP2333826A1 Magnetic memory element and storage device using same
06/15/2011EP2332145A1 Symmetric stt-mram bit cell design
06/15/2011EP2332144A1 Stt-mram bit cell having a rectangular bottom electrode plate
06/15/2011CN1822219B Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same
06/15/2011CN1783337B Magnetic random access memory
06/15/2011CN1622221B Apparatus and method of analyzing magnetic random access memory
06/15/2011CN1610001B Semiconductor memory device with magnetoresistance elements and method of writing data into the same
06/15/2011CN102097584A Magnetoresistance device
06/15/2011CN101521085B Nanocrystal iron nitride thin-film material and functions thereof
06/15/2011CN101328611B Low field super large magnetoresistance manganese oxide epitaxial film and preparation thereof
06/14/2011US7960714 Interfering excitations in FQHE fluids
06/09/2011WO2011068146A1 Magnetic sensor
06/09/2011US20110133298 Spin-Transfer Switching Magnetic Element Utilizing a Composite Free Layer Comprising a Superparamagnetic Layer
06/09/2011DE112009001140T5 Zweiachsen-Magnetfeldsensor mit mehreren Pinning-Richtungen sowie Verfahren zum Herstellen des Sensors Two-axis magnetic field sensor having a plurality of pinning directions as well as methods for manufacturing the sensor
06/09/2011DE102010060892A1 GMR-Sensor innerhalb eines geformten magnetischen Materials unter Verwendung eines nichtmagnetischen Abstandhalters GMR sensor within a shaped magnetic material using a non-magnetic spacer
06/09/2011DE102009056317A1 Thermoelectric converter for direct conversion of heat energy into electrical energy, has cathode and anode lying in plane, where magnetic induction vector is aligned parallel to planes and perpendicular to flow direction to anode
06/09/2011DE102009047624A1 Magnetfeldsensor Magnetic field sensor
06/09/2011DE102004020258B4 Speicher mit einer Mehrzahl von magnetischen Speicherelementen Memory having a plurality of magnetic memory elements
06/08/2011EP1860450B1 Magnetic sensor and manufacturing method thereof
06/08/2011CN102089819A Magnetic device manufacturing method
06/08/2011CN101609688B Magnetoresistive heads and magnetic storage device
06/03/2011WO2011065323A1 Magnetoresistive effect element and magnetic random access memory
06/03/2011WO2011064822A1 Magnetoresistive effect element and magnetic recording/reproducing device
06/02/2011US20110127998 Gmr sensor within molded magnetic material employing non-magnetic spacer
06/02/2011US20110127993 Position Monitoring Device, System and Method
06/01/2011EP2328194A1 Magnetic recording element, magnetic memory cell, and magnetic random access memory
06/01/2011EP2328180A1 Tunneling magnetoresistive element, semiconductor junction element, magnetic memory and semiconductor light emitting element
06/01/2011EP1484766B1 Magnetic storage unit using ferromagnetic tunnel junction element
06/01/2011DE102009047235A1 Schaltungseinrichtung und Leistungsschaltkreis mit der Schaltungseinrichtung Circuit, and power circuit with the circuit device
06/01/2011DE102007033250B4 Integrierte Schaltung mit Magnetspeicher An integrated circuit comprising magnetic memory
06/01/2011CN102084511A Triple-gate or multi-gate component based on the tunneling effect
05/2011
05/26/2011WO2011062005A1 Ferromagnetic tunnel junction element
05/25/2011EP2325846A1 A magnetic tunnel junction memory with thermally assisted writing
05/25/2011EP1935041B1 Method for making a magneto-impedance sensor
05/25/2011CN102077377A System and method to fabricate magnetic random access memory
05/25/2011CN102077315A System and method to fabricate magnetic random access memory
05/25/2011CN102074649A Access memory devices, MRAM cell and manufacturing methods thereof
05/25/2011CN101404198B Dilute magnetic semiconductor material with high curie temperature and its production method
05/25/2011CN101359476B Monitor element and magneto-resistance effect element substrate, and method of manufacturing monitor element
05/24/2011US7948795 Thin film magnetic memory device including memory cells having a magnetic tunnel junction
05/24/2011US7948718 Magnetoresistive head having an insulating layer with a particular compressive stress
05/19/2011US20110117677 Spacer structure in MRAM cell and method of its fabrication
05/19/2011US20110115476 Sensor system including multiple comparators
05/18/2011EP2323189A1 Self-pinned spin valve magnetoresistance effect film and magnetic sensor using the same, and rotation angle detection device
05/18/2011CN1612262B System and method for storing data in an unpatterned, continuous magnetic layer
05/18/2011CN101641790B Compound semiconductor laminate, process for producing the compound semiconductor laminate, and semiconductor device
05/18/2011CN101542767B Tunnel magnetoresistive thin film and magnetic multilayer formation apparatus
05/18/2011CN101207180B Multi-layer electrode structure
05/17/2011US7943399 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
05/12/2011WO2011055420A1 Semiconductor device
05/12/2011WO2011054569A1 Template-registered diblock copolymer mask for mram device formation
05/12/2011US20110111532 Methods of forming pattern structures and methods of manufacturing semiconductor devices using the same
05/11/2011EP2320489A1 Spin valve element and its driving method and storage device employing them
05/11/2011CN102057487A Two-axis magnetic field sensor with multiple pinning directions and method to produce the sensor
05/11/2011CN102057290A Magnetoimpedance sensor element
05/10/2011US7939188 Magnetic stack design
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