| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 08/21/2014 | US20140231888 Magneto-Electric Voltage Controlled Spin Transistors |
| 08/21/2014 | DE102013101732A1 Sensorsystem Sensor system |
| 08/19/2014 | US8811073 Magnetic device, and method for reading from and writing to said device |
| 08/19/2014 | US8810974 Magnetic sensor stack body, method of forming the same, film formation control program, and recording medium |
| 08/19/2014 | US8809981 Method for manufacturing semiconductor device and apparatus for manufacturing same |
| 08/19/2014 | US8809976 Method and structure for a MRAM device with a bilayer passivation |
| 08/14/2014 | US20140227804 System and Process to Remove Film from Semiconductor Devices |
| 08/14/2014 | US20140227803 Method for making a current-perpendicular-to-the-plane (cpp) magnetoresistive sensor having a low-coercivity reference layer |
| 08/14/2014 | US20140227802 Process to Remove Film from Semiconductor Devices |
| 08/14/2014 | US20140227801 Methods of Forming a Magnetic Tunnel Junction Device |
| 08/14/2014 | US20140225643 Method and system for providing a nonvolatile logic array |
| 08/14/2014 | US20140225208 Small form factor magnetic shield for magnetorestrictive random access memory (mram) |
| 08/14/2014 | US20140225207 Magnetic storage element and magnetic memory |
| 08/14/2014 | DE10315532B4 Stromsensorvorrichtung in integrierter Ausführung und Verfahren zum Herstellen Current sensor apparatus of the integrated type and methods for preparing |
| 08/13/2014 | CN103988293A 存储元件和存储装置 Memory element and the memory device |
| 08/13/2014 | CN102945922B 集记忆电阻与隧穿磁电阻的自旋记忆电阻器件及制备方法 Set memory resistor and the tunneling magnetoresistance spin memristor device and preparation method |
| 08/12/2014 | US8803267 Magnetoresistive element and magnetoresistive memory |
| 08/12/2014 | US8803200 Access transistor with a buried gate |
| 08/07/2014 | US20140220708 MR Enhancing Layer (MREL) For Spintronic Devices |
| 08/07/2014 | US20140220707 Method for manufacturing and magnetic devices having double tunnel barriers |
| 08/07/2014 | US20140220385 MR Enhancing Layer (MREL) For Spintronic Devices |
| 08/07/2014 | US20140219013 Method and apparatus for reading a magnetic tunnel junction using a sequence of short pulses |
| 08/07/2014 | US20140217534 Magnetic memory element and storage device using the same |
| 08/07/2014 | US20140217533 Magnetic sensor integrated in a chip for detecting magnetic fields perpendicular to the chip and manufacturing process thereof |
| 08/07/2014 | US20140217532 Magnetic tunnel junction device and fabrication |
| 08/07/2014 | US20140217531 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications |
| 08/07/2014 | US20140217530 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications |
| 08/07/2014 | US20140217529 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications |
| 08/07/2014 | US20140217528 Spin-torque magnetoresistive memory element and method of fabricating same |
| 08/07/2014 | US20140217527 Method of manufacturing mram memory elements |
| 08/07/2014 | US20140217526 Novel perpendicular magnetoresistive elements |
| 08/07/2014 | US20140217525 Method of improving sensitivity of terrestrial magnetism sensor and apparatus using the same |
| 08/07/2014 | US20140217524 Electrostatically controlled magnetic logic device |
| 08/07/2014 | US20140217487 Stt-mram and method of manufacturing the same |
| 08/06/2014 | EP2761682A1 Method for manufacturing and magnetic devices having double tunnel barriers |
| 08/06/2014 | CN203760517U 一种磁传感装置 A magnetic sensor apparatus |
| 08/06/2014 | CN103972382A 一种制造半导体材料的方法 A method of manufacturing a semiconductor material |
| 08/06/2014 | CN103972381A 装置结构及其制造方法 Device structure and manufacturing method |
| 08/05/2014 | US8797060 Signal processing device using magnetic film and signal processing method |
| 08/05/2014 | US8796793 Magnetoresistive element, magnetic random access memory and method of manufacturing the same |
| 08/05/2014 | US8796046 Methods of integrated shielding into MTJ device for MRAM |
| 08/05/2014 | US8796045 Magnetoresistive random access memory |
| 08/05/2014 | US8795856 Nickel thin film, method for formation of the nickel thin film, ferromagnetic nano-junction element, method for producing the ferromagnetic nano-junction element, thin metallic wire, and method for formation of the thin metallic wire |
| 07/31/2014 | WO2014116742A1 Method and apparatus for ameliorating peripheral edge damage in magnetoresistive tunnel junction (mtj) device ferromagnetic layers |
| 07/31/2014 | WO2014116737A1 Process and apparatus for transforming nitridation/oxidation at edges, and protecting edges of magnetoresistive tunnel junction (mtj) layers |
| 07/31/2014 | US20140212993 Method of manufacturing a magnetoresistive device |
| 07/31/2014 | US20140212671 Direct Growth of Graphene by Molecular Beam Epitaxy for the Formation of Graphene Heterostructures |
| 07/31/2014 | US20140211557 Voltage assisted stt-mram writing scheme |
| 07/31/2014 | US20140211552 Memory device using spin hall effect and methods of manufacturing and operating the memory device |
| 07/31/2014 | US20140210461 Vertical hall device with highly conductive opposite face node for electrically connecting first and second hall effect regions |
| 07/31/2014 | US20140210026 Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate |
| 07/31/2014 | US20140210025 Spin transfer mram element having a voltage bias control |
| 07/31/2014 | US20140210024 Tunneling magnetoresistance (tmr) read sensor with an integrated auxilliary ferromagnetic shield |
| 07/31/2014 | US20140210023 Vertical Hall Effect Element with Improved Sensitivity |
| 07/31/2014 | US20140210022 Magnetic Seed for Improving Blocking Temperature and Shield to Shield Spacing in a TMR Sensor |
| 07/31/2014 | US20140210021 Method and apparatus for ameliorating peripheral edge damage in magnetoresistive tunnel junction (mtj) device ferromagnetic layers |
| 07/31/2014 | US20140209892 Selector for low voltage embedded memory |
| 07/31/2014 | DE102014201178A1 Vertikale Hall-Vorrichtung mit hoch leitendem Gegenflächenknoten für einen elektrischen Anschluss von einem ersten und zweiten Hall-Effekt-Gebiet Vertical Hall device with highly conductive mating surface node for an electrical connection of a first and second Hall effect area |
| 07/30/2014 | EP2758962A1 Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device |
| 07/30/2014 | CN103956427A 感测元件 Sensing element |
| 07/30/2014 | CN103956249A 一种垂直各向异性人工反铁磁耦合多层膜材料 The vertical anisotropy antiferromagnetic coupling artificial multilayers materials |
| 07/30/2014 | CN103952746A 一种双钙钛矿磁电阻薄膜的制备方法 Preparation method of double perovskite thin film magnetoresistance |
| 07/30/2014 | CN102903843B 一种霍尔芯片定位装置 One kind of the Hall chip positioning device |
| 07/30/2014 | CN102272965B 具有存储层材料的磁性元件 Layer material having a memory of a magnetic element |
| 07/29/2014 | US8791534 Magnetic memory device and magnetic memory |
| 07/29/2014 | US8790798 Magnetoresistive element and method of manufacturing the same |
| 07/24/2014 | US20140206106 Magnetic memory and method of manufacturing the same |
| 07/24/2014 | US20140206104 Strain induced reduction of switching current in spin-transfer torque switching devices |
| 07/24/2014 | US20140204661 Memory with elements having two stacked magnetic tunneling junction (mtj) devices |
| 07/24/2014 | US20140204647 Racetrack memory cells with a vertical nanowire storage element |
| 07/24/2014 | US20140204487 Magnetoresistive effect element, magnetic head, magnetic head assembly, and magnetic recording and reproducing apparatus |
| 07/24/2014 | US20140203385 Magnetic memory and method of manufacturing the same |
| 07/24/2014 | US20140203384 Push-Pull Magnetoresistive Sensor Bridges and Mass Fabrication Method |
| 07/24/2014 | US20140203383 Perpendicular magnetoresistive memory element |
| 07/24/2014 | US20140203382 Boron carbide films exhibits extraordinary magnetoconductance and devices based thereon |
| 07/24/2014 | US20140203381 Process and apparatus for transforming nitridation/oxidation at edges, and protecting edges of magnetoresistive tunnel junction (mtj) layers |
| 07/24/2014 | US20140203341 Electric field assisted perpendicular stt-mram |
| 07/24/2014 | DE19861304B4 Magnetfeld-Erfassungselement Magnetic field sensing element |
| 07/23/2014 | EP2756530A1 Strain induced reduction of switching current in spintransfer torque switching devices |
| 07/23/2014 | CN103946997A 具有双隧道势垒的磁器件及其制造方法 A magnetic device and manufacturing method of the double tunnel barrier |
| 07/23/2014 | CN103946974A 存储元件、存储装置 Storage element, the storage device |
| 07/23/2014 | CN103943774A 基于镁靶的磁隧道结制备方法 Magnesium target preparation method based on magnetic tunnel junction |
| 07/23/2014 | CN102723350B 基于PbSe胶体量子点的阵列式霍尔元件的制作方法 Based on the production method of PbSe QDs Hall element array |
| 07/23/2014 | CN101750591B 垂直霍尔传感器 Vertical Hall sensors |
| 07/22/2014 | US8787076 Magnetic memory and method of manufacturing the same |
| 07/22/2014 | US8786036 Magnetic tunnel junction for MRAM applications |
| 07/22/2014 | US8785901 Semiconductor devices having metal oxide patterns |
| 07/22/2014 | US8785288 Methods of making memory cells |
| 07/17/2014 | US20140198564 Magnetoresistive element and method of manufacturing the same |
| 07/17/2014 | US20140197505 Shields for magnetic memory chip packages |
| 07/17/2014 | US20140197504 Mg Discontinuous Insertion Layer for Improving MTJ Shunt |
| 07/17/2014 | DE102013226319A1 XMR-Sensor und Verfahren zur Herstellung des XMR-Sensors XMR sensor and method for manufacturing the sensor XMR |
| 07/17/2014 | DE102007060845B4 Stromsensor und Gussverfahren für denselben Current sensor and casting method for the same |
| 07/16/2014 | CN103928608A 磁阻存储器的形成方法 The method for forming a magnetoresistive memory |
| 07/16/2014 | CN103928607A 提供具有易锥各向异性的磁性隧道结元件的方法和系统 Provide a method and system with easy cone anisotropy magnetic tunnel junction element |
| 07/16/2014 | CN102956814B 一种镧锶铜锰硫氧稀磁半导体材料及其制备方法 A strontium sulfide copper manganese oxide dilute magnetic semiconductor material and method of lanthanum |
| 07/16/2014 | CN102007614B 使用两个掩模的磁性隧道结元件的制造方法 Using the two masks a method of manufacturing a magnetic tunnel junction element |
| 07/15/2014 | US8780665 Method and system for providing magnetic tunneling junction elements having an easy cone anisotropy |
| 07/15/2014 | US8779537 Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer |
| 07/10/2014 | US20140191361 Electroless plating of cobalt alloys for on chip inductors |