| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 02/12/2014 | CN103579497A Magnetic junction, magnetic memory, method and system for providing magnetic junctions having improved characteristics |
| 02/12/2014 | CN103579496A Magnetic memory device and method of fabricating the same |
| 02/12/2014 | CN103579495A Magnetic nano-multilayer film for magneto-dependent sensor and preparing method thereof |
| 02/12/2014 | CN103578975A Method for etching metal layer and method for manufacturing a semiconductor device using the same |
| 02/06/2014 | US20140038314 Magnetic random access memory (mram) with enhanced magnetic stiffness and method of making same |
| 02/06/2014 | US20140038313 Semiconductor fabricating device and method for driving the same, and method for fabricating magnetic tunnel junction using the same |
| 02/06/2014 | US20140038312 Fabrication of a magnetic tunnel junction device |
| 02/06/2014 | US20140038311 Methods for etching materials used in mram applications |
| 02/06/2014 | US20140038310 Magnetic random access memory with synthetic antiferromagnetic storage layers |
| 02/06/2014 | US20140038309 Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers |
| 02/06/2014 | US20140035076 Magnetoresistive Device Having Semiconductor Substrate and Preparation Method Therefor |
| 02/06/2014 | US20140035075 Magnetic tunnel junction device |
| 02/06/2014 | US20140035074 Multilayers Having Reduced Perpendicular Demagnetizing Field Using Moment Dilution for Spintronic Applications |
| 02/06/2014 | US20140035073 Magneto-resistive element |
| 02/05/2014 | EP2693486A1 A nanomagnetic logic gate and an electronic device |
| 02/05/2014 | CN102270736B Magnetic nano-multilayer film used for magnetic sensor and manufacturing method for magnetic nano-multilayer film |
| 01/30/2014 | WO2014018920A1 Amorphous alloy spacer for perpendicular mtjs |
| 01/30/2014 | US20140027869 AMORPHOUS ALLOY SPACER FOR PERPENDICULAR MTJs |
| 01/30/2014 | US20140027830 Access transistor with a buried gate |
| 01/30/2014 | US20140027697 Magnetic random access memory with switching assist layer |
| 01/30/2014 | DE112008002678B4 Schichtbildungsverfahren Layer formation process |
| 01/29/2014 | EP2689421A1 Device consisting of various thin films and use of such a device |
| 01/29/2014 | CN103545443A Magnetic device and method of manufacturing the same |
| 01/23/2014 | WO2014012624A1 Spintronic circuit and method of operation therefore |
| 01/23/2014 | WO2013163653A3 Magnetic memory and method of fabrication |
| 01/23/2014 | WO2013162918A3 Techniques for patterning multilayer magnetic memory devices using ion implantation |
| 01/23/2014 | US20140024140 Magnetoresistance effect device and method of production of the same |
| 01/23/2014 | US20140024139 Hole First Hardmask Definition |
| 01/23/2014 | US20140024138 Method for etching metal layer and method for manufacturing a semiconductor device using the same |
| 01/23/2014 | US20140021571 Single-chip bridge-type magnetic field sensor and preparation method thereof |
| 01/23/2014 | US20140021570 Methods of integrated shielding into mtj device for mram |
| 01/23/2014 | US20140021568 Magnentic resistance memory apparatus having multi levels and method of driving the same |
| 01/23/2014 | US20140021567 Magnentic resistance memory apparatus having multi levels and method of driving the same |
| 01/23/2014 | US20140021566 Magnetic device and method of fabricating the same |
| 01/23/2014 | US20140021471 Mram synthetic anitferomagnet structure |
| 01/23/2014 | US20140021426 Magnetic device and method of manufacturing the same |
| 01/22/2014 | EP2688072A1 Spintronic circuit and method of operation therefore |
| 01/22/2014 | CN103531708A Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfaces |
| 01/22/2014 | CN103531707A 磁性隧道结 Magnetic tunnel junction |
| 01/22/2014 | CN103523741A Hybrid integrated component and method for the manufacture thereof |
| 01/22/2014 | CN101552320B Method and system for providing a hard bias capping layer |
| 01/16/2014 | WO2014011950A1 Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications |
| 01/16/2014 | US20140017820 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications |
| 01/16/2014 | US20140017818 Method for manufacturing non-volatile magnetic memory cell in two facilities |
| 01/16/2014 | US20140017817 Techniques for treating sidewalls of patterned structures using angled ion treatment |
| 01/16/2014 | US20140015080 Stt mram magnetic tunnel junction architecture and integration |
| 01/16/2014 | US20140015079 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications |
| 01/16/2014 | US20140015078 Spin transfer torque magnetic random access memory (sttmram) having graded synthetic free layer |
| 01/16/2014 | US20140015077 Reducing source loading effect in spin torque transfer magnetoresistive random access memory (stt-mram) |
| 01/16/2014 | US20140015075 Magnetic memory with separate read and write paths |
| 01/16/2014 | US20140015074 Precessional reversal in orthogonal spin transfer magnetic ram devices |
| 01/15/2014 | EP2685272A1 Magnetic sensor chip and magnetic sensor |
| 01/15/2014 | CN203398167U Tunneling magneto-resistor device |
| 01/15/2014 | CN103515528A Devices including tantalum alloy layers |
| 01/14/2014 | US8629675 Linear sensor |
| 01/09/2014 | WO2014006898A1 Magnetic sensor |
| 01/09/2014 | US20140011298 Magnetic tunnel junction structure |
| 01/09/2014 | US20140010004 Magnetic memory |
| 01/09/2014 | US20140008744 Memory system having thermally stable perpendicular magneto tunnel junction (mtj) and a method of manufacturing same |
| 01/09/2014 | US20140008743 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element |
| 01/09/2014 | US20140008742 Magnetic tunneling junction seed, capping, and spacer layer materials |
| 01/09/2014 | DE102012211843A1 Magnetfeldsensor Magnetic field sensor |
| 01/08/2014 | EP2682773A1 Separately packaged bridge magnetic-field angle sensor |
| 01/08/2014 | EP2682772A1 Individually packaged magnetoresistance angle sensor |
| 01/08/2014 | CN103500581A Thin film with reduced stress anisotropy |
| 01/08/2014 | CN102479920B Manufacture method of nanometer annular magnetic tunnel structure and manufacture method of magnetic resistance internal memory |
| 01/08/2014 | CN102460199B 磁传感器 Magnetic sensors |
| 01/08/2014 | CN102299256B Magnetoelectric random memory cell and magnetoelectric random memory comprising same |
| 01/03/2014 | WO2014002387A1 Hall electromotive force correction device and hall electromotive force correction method |
| 01/02/2014 | US20140001587 Storage element and memory |
| 01/02/2014 | US20140001586 Perpendicularly magnetized magnetic tunnel junction device |
| 01/02/2014 | US20140001585 Magnetic stack with orthogonal biasing layer |
| 01/02/2014 | DE102013212463A1 Vertical Hall-effect sensor system has conductive Hall-effect region beneath substrate surface, supply terminals, Hall signal terminal, and feedback circuit, where supply terminal or Hall signal terminal has force contact and sense contact |
| 01/01/2014 | CN103490007A Spinning valve based on graphene nanoribbons and preparation method thereof |
| 01/01/2014 | CN103490006A Magnetic cell and method for programming magnetic memory |
| 01/01/2014 | CN103489557A Room-temperature transparent ferromagnetic semiconductor material and preparation method thereof |
| 12/27/2013 | WO2013190950A1 Magnetic sensor |
| 12/27/2013 | WO2013190924A1 Semiconductor device and method for manufacturing same |
| 12/26/2013 | US20130342195 Vertical hall device comprising first and second contact interconnections |
| 12/26/2013 | US20130342194 Vertical hall sensor with series-connected hall effect regions |
| 12/26/2013 | US20130341745 Magnetic Field Measurement Apparatus |
| 12/26/2013 | US20130341744 Magnetic random access memory |
| 12/26/2013 | US20130341743 Devices including tantalum alloy layers |
| 12/25/2013 | EP2676274A1 Methods of integrated shielding into mtj device for mram |
| 12/25/2013 | EP2089888B1 Electronic devices based on current induced magnetization dynamics in single magnetic layers |
| 12/25/2013 | CN203367367U Flexible multiferroic device |
| 12/25/2013 | CN102017128B Magnetic tunnel junction cell including multiple vertical magnetic domains |
| 12/19/2013 | WO2013187193A1 Non-volatile logic gate element |
| 12/19/2013 | US20130337582 Mram etching processes |
| 12/19/2013 | US20130336045 Spin transfer torque memory (sttm) device with half-metal and method to write and read the device |
| 12/19/2013 | US20130334634 Single-Package Bridge-Type Magnetic-Field Angle Sensor |
| 12/19/2013 | US20130334633 Magnetic Tunnel Junction With Non-Metallic Layer Adjacent to Free Layer |
| 12/19/2013 | US20130334629 MTJ Element for STT MRAM |
| 12/19/2013 | DE102012210049A1 Hybrid integriertes Bauteil und Verfahren zu dessen Herstellung Hybrid integrated component and method for its production |
| 12/18/2013 | EP2430661B1 Magnetic tunnel junction device and fabrication |
| 12/18/2013 | CN103460374A Magnetic memory |
| 12/18/2013 | CN103454601A Magneto-sensitive wire, magneto-impedance element and magneto-impedance sensor |
| 12/18/2013 | CN101960629B Method for manufacturing magnetic tunnel junction device and apparatus for manufacturing magnetic tunnel junction device |
| 12/17/2013 | US8609262 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application |
| 12/17/2013 | CA2540608C Magnetic tunnel junction device and writing/reading method for said device |