Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
05/2011
05/05/2011WO2011052596A1 Magnetic sensor
05/05/2011WO2011052475A1 Magnetic memory element, magnetic memory, and methods for initializing magnetic memory element and magnetic memory
05/05/2011WO2011052021A1 Magnetic recording device
05/05/2011US20110104829 Method of transfer by means of a ferroelectric substrate
05/05/2011US20110104827 Template-Registered DiBlock Copolymer Mask for MRAM Device Formation
05/05/2011US20110101477 Method for manufacturing magnetic field detection devices and devices therefrom
05/05/2011US20110101432 Semiconductor device and method for manufacturing the same
05/04/2011EP2317581A1 Magnetoresistance device
05/04/2011CN1992105B Ring-shaped magnetic multi-layer film having metallic core and method for making same and use
05/04/2011CN1992104B Ring-shaped magnetic multi-layer film and method for making same and use
05/04/2011CN102044629A Manufacturing method of Hall integrated circuit (IC) component
05/04/2011CN102044255A Magneto-resistive devices, information storage devices including the same and methods of operating information storage devices
05/04/2011CN101510583B Quantization Hall resistance element containing multilayer two-dimension electron gas and method for producing the same
05/04/2011CN101034145B Integrated three-dimensional superconductive composite magnetic field sensor and manufacturing method and use thereof
04/2011
04/28/2011DE102004025422B4 Resistiver Kreuzpunktspeicher Resistive cross point memory
04/27/2011CN102034926A Magnetoelectric laminated material structure formed by connecting piezoelectric material layers in series
04/27/2011CN101359714B Magnetic field detecting element having thin stack with a plurality of free layers and thick bias magnetic layer
04/21/2011WO2011046091A1 Magnet device
04/21/2011WO2011046090A1 Magnet device
04/21/2011US20110090732 Magnetic Tunnel Junction Cell Adapted to Store Multiple Digital Values
04/21/2011DE102007041266B4 Sensorvorrichtung und deren Herstellungsverfahren Sensor device and its manufacturing method
04/21/2011DE102004043855B4 Verfahren zur Herstellung einer Magnet-Tunnel-Junction-Vorrichtung A method of manufacturing a magnetic tunnel junction device
04/20/2011EP2311110A1 System and method to fabricate magnetic random access memory
04/20/2011EP2311071A1 System and method to fabricate magnetic random access memory
04/20/2011EP1540748B1 Magnetic field sensor comprising a hall element
04/20/2011CN1713299B Magnetic memory unit and fabricating method thereof
04/20/2011CN1606093B Non-volatile memory cell using torque and random access magnetic memory using same
04/20/2011CN102024904A Film material for high-sensitivity metal Hall sensor and preparation method of film material
04/20/2011CN102024903A Magnetic memory device
04/20/2011CN101710525B Ultra-high sensitive magneto-resistance film material and preparation method thereof
04/20/2011CN101624701B Dry etching method for magnetic material
04/19/2011US7928524 Magnetoresistive element
04/14/2011WO2011043193A1 Magnetic balance current sensor
04/14/2011US20110086439 Method and apparatus for manufacturing magnetoresistive element
04/14/2011US20110084429 Compounds and methods of fabricating compounds exhibiting giant magnetoresistence and spin-polarized tunneling
04/14/2011US20110084349 Thermoelectric conversion device
04/14/2011US20110084347 Magnetic tunnel junction device and method for manufacturing the same
04/13/2011EP2203756B1 Magnetic field sensor
04/13/2011CN1725370B Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption
04/13/2011CN102017208A Stt mram magnetic tunnel junction architecture and integration
04/13/2011CN102017157A Method of forming a magnetic tunnel junction using a single mask
04/13/2011CN102017128A Magnetic tunnel junction cell including multiple vertical magnetic domains
04/13/2011CN102013454A Method of manufacturing nonvolatile memory device
04/13/2011CN101465126B Magnetic reproduction head, magnetic head and magnetic memory device
04/13/2011CN101393961B Lorentz magnetoresistive sensor and fabrication thereof
04/13/2011CN101351902B InSb thin film magnetic sensor and fabrication method thereof
04/13/2011CN101162755B Semiconductor device and method of manufacturing the same
04/12/2011US7924534 Magnetic sensor
04/12/2011US7923997 Magneto-sensitive integrated circuit
04/07/2011WO2011039843A1 Magnetic oscillator
04/07/2011DE102006050833B4 Magnetoresistives Sensorelement und ein Verfahren zu dessen Herstellung, sowie dessen Verwendung und eine Sensoranordnung A magneto-resistive sensor element and a process for its preparation, and its use, and a sensor arrangement
04/06/2011EP2306540A1 Spin valve recording element and storage device
04/06/2011EP2306510A1 Magnetic memory element and its driving method and nonvolatile memory device
04/06/2011CN102007614A Manufacturing method of a magnetic tunnel junction element using two masks
04/06/2011CN102007543A Recording method for magnetic memory device
04/06/2011CN102007542A Method of making record in magnetic memory device
04/06/2011CN101231881B Shared global word line magnetic random access memory
03/2011
03/31/2011WO2011037143A1 Magnetic memory
03/31/2011WO2011036817A1 Magnetic memory
03/31/2011WO2011036796A1 Magnetic memory
03/31/2011WO2011036795A1 Magnetoresistive effect element and magnetic memory
03/31/2011WO2011036770A1 Pass transistor circuit with memory function, and switching box circuit provided with pass transistor circuit
03/31/2011WO2011036753A1 Magnetic memory
03/31/2011WO2011036752A1 Resonant tunneling magnetoresistance effect element, magnetic memory cell, and magnetic random access memory
03/31/2011DE102009041642A1 Quantendrahtarray-Feldeffekt-(Leistungs-)-Transistor QFET (insbesondere magnetisch - MQFET, aber auch elektrisch oder optisch angesteuert) bei Raumtemperatur, basierend auf Polyacetylen-artige Moleküle Quantum wire array field-effect (power -) - QFET transistor (especially magnetic - MQFET, but not electrically or optically driven) at room temperature, based on polyacetylene-like molecules
03/30/2011CN101994055A Composite magnetostrictive material and preparation method thereof
03/30/2011CN101692480B Method for improving stability of bias field in multi-layer membrane structure in Co/Cu/NiFe/FeMn spin valve structure
03/30/2011CN101207176B Information storage devices using movement of magnetic domain wall and methods of manufacturing the same
03/30/2011CN101188271B Data storage device having magnetic domain wall motion and method of forming the same
03/29/2011US7915995 Compensation of field effect on polycrystalline resistors
03/29/2011US7914654 Method and apparatus for depositing a magnetoresistive multilayer film
03/24/2011WO2011033981A1 Magnetic sensor production method
03/24/2011WO2011033980A1 Magnetic sensor and production method therefor
03/24/2011WO2011033873A1 Magnetoresistive element and non-volatile semiconductor memory device using same
03/24/2011WO2011033716A1 Spin-injection element, and magnetic field sensor and magnetic recording memory employing the same
03/24/2011WO2011033664A1 High-frequency element
03/24/2011DE10215572B4 Elektrischer Anschluss und elektrisches Bauelement damit Electrical connection and electrical component so
03/24/2011DE102010037257A1 Magnetspeichervorrichtungen Magnetic storage devices
03/23/2011CN1983391B Integration of small flash field, zero bias, and non-reactive ion milling
03/23/2011CN101989643A Magnetic sensor stack body, method of forming the same, film formation control program, and recording medium
03/17/2011WO2011032187A2 Magnetic tunnel junction device and fabrication
03/17/2011WO2011031551A1 Magnetic tunnel junction device and fabrication
03/17/2011WO2011030826A1 Method for forming thin film and device for forming thin film
03/17/2011WO2011030529A1 Method for manufacturing magnetoresistive element
03/17/2011DE102009032042B4 System mit einer magnetischen Erfassungsschichtorientierung von 90 Grad und Verfahren zur Herstellung eines Sensors System having a magnetic recording layer orientation of 90 degrees and method for producing a sensor
03/16/2011EP2295993A1 Current Sensor
03/16/2011EP2294638A2 Triple-gate or multi-gate component based on the tunneling effect
03/16/2011EP1155453B1 Extraordinary magnetoresistance at room temperature in inhomogeneous narrow-gap semiconductors
03/16/2011CN201766105U Hall-effect current sensor system, flip semiconductor device and lead frame structure
03/10/2011WO2011027404A1 Magnetic memory
03/10/2011WO2011027396A1 Magnetic recording/reproducing device
03/10/2011DE102009038938A1 Vertikaler Hall-Sensor und Verfahren zur Herstellung eines vertikalen Hall-Sensors Vertical Hall sensor and method for manufacturing a vertical Hall sensor
03/09/2011EP2293093A1 Magnetic sensor and magnetic encoder
03/09/2011EP2293092A1 Magnetoimpedance sensor element
03/09/2011CN101546808B Magnetoresistance effect element and magnetic random access memory
03/09/2011CN101335325B Magneto-resistive effect device of the cpp structure, and magnetic disk system
03/08/2011US7902617 Forming a thin film electric cooler and structures formed thereby
03/08/2011US7902580 Assemblies comprising magnetic elements and magnetic barrier or shielding
03/03/2011WO2011024923A1 Magnetic field sensor, as well as magnetic field measurement method, power measurement device, and power measurement method using the same
03/03/2011US20110049659 Magnetization control method, information storage method, information storage element, and magnetic function element
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