Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
06/2012
06/27/2012CN102522498A Magnetic memory device and method of manufacturing the same
06/27/2012CN102522497A Preparation method of low field magnetoresistance material with temperature stability in room-temperature zone
06/27/2012CN101866738B Perpendicular magnetic anisotropic multi-layered film
06/21/2012WO2012082998A1 Magnetic sensor seed layer with magnetic and nonmagnetic layers
06/21/2012WO2012081694A1 Spin conductance structure, memory element, spin transistor, and method for forming spin conductance structure
06/21/2012WO2012081453A1 Semiconductor storage device
06/21/2012WO2012081377A1 Magnetic sensor and method of manufacturing magnetic sensor
06/21/2012WO2011097297A8 Mri sensor based on the hall effect for crm imd applications
06/21/2012US20120154063 Spin torque oscillator having multiple fixed ferromagnetic layers or multiple free ferromagnetic layers
06/21/2012DE102011088710A1 Magnetorsistive winkelsensoren Magne torsos scopes angle sensors
06/20/2012CN102509768A Fe3O4 (ferroferric oxide)/p-Si (p-type silicon) structure capable of regulating and controlling magneto-resistance effect with current and preparation method for same
06/20/2012CN102509767A Complementary metal oxide semiconductor (CMOS) sensor with octagonal Hall disk structure and manufacturing method for CMOS sensor
06/19/2012US8203191 Spin current thermal conversion device and thermoelectric conversion device
06/14/2012WO2012077518A1 Perovskite manganese oxide thin film and production method for same
06/14/2012WO2012077517A1 Perovskite manganese oxide thin film
06/14/2012DE112010002899T5 Verfahren zur Herstellung eines Magnetowiderstandseffektelements, eines Magnetsensors, einer Drehwinkel-Erfassungsvorrichtung A method for producing a magnetoresistance effect element, a magnetic sensor, a rotation angle detection apparatus
06/14/2012DE102011120451A1 Nichtflüchtiger Speicher mit verbessertem Wirkungsgrad zum Adressieren von asymmetrischen, nichtflüchtigen Speicherzellen Non-volatile memory with improved efficiency for addressing asymmetric, non-volatile memory cells
06/14/2012DE102011056189A1 Method for manufacturing curved conductor for magnetic-current sensor, involves forming columnar portions with constant height and extending at right angles to contact portions and base portion
06/14/2012DE102011056187A1 Magnetfeld-Stromsensoren Magnetic current sensors
06/13/2012CN101304071B Extraordinary magnetoresistive (EMR) device
06/12/2012US8199568 Method and apparatus for a disk damper including an enclosing flow chamber wall for a hard disk drive
06/12/2012US8198864 Method and system for determining a state of charge of a battery
06/12/2012US8197953 Magnetic stack design
06/07/2012WO2012074537A1 Magnetic tunnel junction device and fabrication
06/07/2012US20120139019 Magnetoresistive effect element and method of manufacturing magnetoresistive effect element
06/06/2012EP2461174A1 Magnetic field sensor, as well as magnetic field measurement method, power measurement device, and power measurement method using the same
06/06/2012EP2461168A1 Non-contact current sensor
06/06/2012EP2118894B1 An improved high capacity low cost multi-state magnetic memory
06/06/2012CN102487118A Magnetic biosensor and preparation method thereof
05/2012
05/31/2012US20120135543 Method For Forming Magnetic Tunnel Junction Structure And Method For Forming Magnetic Random Access Memory Using The Same
05/30/2012CN202259452U Single chip magnetism sensor and laser heating auxiliary annealing device thereof
05/30/2012CN1905229B Magnetoresistive device and nonvolatile magnetic memory equipped with the same
05/30/2012CN102479920A 纳米环型磁隧道结的制造方法、磁阻内存的制造方法 Nano-ring method of manufacturing a magnetic tunnel junction, manufacturing method magnetoresistive memory
05/30/2012CN102479919A Flux programmed multi-bit magnetic memory
05/30/2012CN102479918A 形成磁性隧道结结构和形成磁性随机存取存储器的方法 Forming a magnetic tunnel junction structure and a method of forming a magnetic random access memory
05/30/2012CN101783387B Giant magnetoresistance composite material
05/30/2012CN101421635B Magnetic sensor and method for fabricating the same
05/29/2012US8188558 ST-RAM magnetic element configurations to reduce switching current
05/24/2012DE102011086488A1 XMR-Winkelsensoren XMR angle sensors
05/23/2012CN1714402B Magnetic storage unit using ferromagnetic tunnel junction element
05/23/2012CN102473450A Magnetic stack having reference layers with orthogonal magnetization orientation directions
05/23/2012CN102473449A 静磁场辅助的阻性感测元件 The static magnetic field assisted resistive sensing element
05/23/2012CN102473448A 具有电阻性感测元件块擦除和单向写入的非易失性存储器阵列 Has a resistive sensing element unidirectional block erase and write nonvolatile memory array
05/23/2012CN102468425A 磁存储器件 Magnetic memory device
05/23/2012CN102468424A 用于提供改进转换性能的混合磁隧道结元件的方法和系统 Provides improved performance for converting the mixed magnetic tunnel junction element method and system
05/23/2012CN102468320A Memory cell with phonon-blocking insulating layer
05/23/2012CN102467954A Method of switching out-of-plane magnetic tunnel junction cells
05/23/2012CN101212018B Storage element and memory
05/23/2012CN101183704B Tunneling magnetoresistance device, its manufacture method, magnetic head and magnetic memory using tmr device
05/17/2012US20120119735 Xmr sensors with high shape anisotropy
05/16/2012EP2453482A1 Magnetization-reversing apparatus, memory element, and magnetic field-generating apparatus
05/16/2012EP2118893B1 Non-volatile magnetic memory element with graded layer
05/16/2012DE102011085955A1 XMR-Sensoren mit ausgeprägter Formanisotropie XMR sensors with a pronounced anisotropy
05/16/2012CN1750168B Magnetic memory device and its operation method and producing method
05/16/2012CN102460650A Vacuum heating/cooling apparatus and method of producing magnetoresistive element
05/16/2012CN102460199A 磁传感器 Magnetic sensors
05/16/2012CN102456830A Magnetic tunnel junction cells having perpendicular anisotropy and enhancement layer
05/16/2012CN102456407A Magnetic memory element with multi-domain storage layer
05/16/2012CN101359715B Self-rotary transferring device and preparation thereof
05/10/2012WO2012060181A1 Current sensor
05/10/2012US20120115253 Semiconductor apparatus
05/09/2012EP2450719A1 Magnetic sensor
05/09/2012EP2449394A1 Hall sensor element and method for measuring a magnetic field
05/09/2012CN102449755A 半导体装置 Semiconductor device
05/09/2012CN102447056A Compound molecule thin film material and manufacturing method thereof
05/09/2012CN102447055A Magnetic metal thin film type hall device and preparation method thereof
05/09/2012CN102446541A Magnetic random access memory and manufacturing method thereof
05/08/2012US8174879 Biosensor and sensing cell array using the same
05/03/2012WO2012056087A1 An apparatus for spectrum sensing and associated methods
05/03/2012US20120106233 Reduced switching-energy magnetic elements
05/02/2012EP2447948A1 Thermally assisted magnetic random access memory element with improved endurance
05/02/2012CN102439745A Magnetoelectronic components and measurement method
05/02/2012CN101743634B Storage element and memory
04/2012
04/25/2012CN102427111A 一种柔性的层状磁电元件 A flexible laminar magnetic element
04/25/2012CN101241705B Sensor shape and etching technique of CPP magnetic head for reducing capability descending
04/24/2012US8164149 Vertical hall sensor
04/19/2012US20120092003 Magnetic-electric energy conversion device, power supply device, and magnetic sensor
04/19/2012US20120092001 Method and device for diagnosis of sensor faults for determination of angular position of polyphase rotary electrical machine
04/18/2012EP2441100A1 Magnetic tunnel junction device and fabrication
04/18/2012CN102422421A Magnetic tunnel junction device and fabrication
04/17/2012US8158190 Low magnetization materials for high performance magnetic memory devices
04/12/2012US20120086089 Magnetic tunnel junction device and fabrication
04/11/2012CN202189784U 一种3-d霍尔传感器 One kind of 3-d Hall sensors
04/11/2012CN102414570A 超高灵敏度磁阻抗传感器 High sensitivity magneto-impedance sensor
04/11/2012CN102412257A Semiconductor memory device and manufacturing method of the same
04/11/2012CN102410848A 磁阻传感器 Magnetoresistive sensor
04/05/2012WO2012042178A1 Magnetic device having heat-assisted writing
04/05/2012DE102004043264B4 Magnet-Speichervorrichtungen mit wahlfreiem Zugriff, die wärmeerzeugende Schichten enthalten und darauf bezogene Verfahren zum Programmieren Magnetic random access memory devices which contain heat-generating layers and related method for programming
04/04/2012EP2436054A1 Vertical hall effect sensor with current focus
04/04/2012EP2436053A1 Vertical hall effect sensor
04/04/2012EP2436035A1 Magnetic memory device with spin polarisation, and method for using same
04/04/2012CN102403451A 一种磁性随机存取存储器磁性隧道结层制造方法 A magnetic random access memory manufacturing method of a magnetic tunnel junction layer
04/04/2012CN102403450A 一种二维电子气结构的霍尔元件及其制备方法 Hall element and a method for preparing a two-dimensional electron gas structures
04/04/2012CN102403449A 存储元件及存储器 Storage elements and memory
04/04/2012CN102403448A Memory element and memory
04/04/2012CN102403038A 存储元件和存储器件 Memory element and a memory device
04/04/2012CN102403031A 存储元件和存储装置 Memory element and the memory device
04/04/2012CN102403030A 存储元件和存储装置 Memory element and the memory device
04/04/2012CN102403029A Memory element and memory device
04/04/2012CN102403028A 存储元件和存储装置 Memory element and the memory device
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