Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
09/2014
09/25/2014US20140284539 Magnetoresistive element and magnetic memory
09/25/2014US20140284534 Magnetoresistive element and manufacturing method thereof
09/25/2014US20140284533 Semiconductor memory device
09/23/2014US8843605 Method and system for filtering and suppression of telemetry data
09/23/2014US8842467 Magnetic random access memory apparatus, methods for programming and verifying reference cells therefor
09/23/2014US8842466 Magnentic resistance memory apparatus having multi levels and method of driving the same
09/23/2014US8841006 Magnetic tunnel junction device and method for manufacturing the same
09/18/2014WO2014143404A1 A vertical hall effect element with structures to improve sensitivity
09/18/2014WO2014142318A1 Electromagnetic effect material and ceramic electronic component
09/18/2014US20140281231 Electronic device and method for fabricating the same
09/18/2014US20140273288 Method of forming a magnetic tunnel junction device
09/18/2014US20140273287 Method of manufacturing the same
09/18/2014US20140273286 Structure and fabrication of memory array with epitaxially grown memory elements and line-space patterns
09/18/2014US20140273285 Memory array with self-aligned epitaxially grown memory elements and annular fet
09/18/2014US20140273284 Thermally assisted mram with multilayer strap and top contact for low thermal conductivity
09/18/2014US20140273283 Forming magnetic microelectromechanical inductive components
09/18/2014US20140273282 Parallel shunt paths in thermally assisted magnetic memory cells
09/18/2014US20140269039 Electronic device and variable resistance element
09/18/2014US20140269038 Magnetic memory
09/18/2014US20140269037 Magnetic memory element and nonvolatile memory device
09/18/2014US20140269035 Cross point array mram having spin hall mtj devices
09/18/2014US20140266185 Magnetic field sensing apparatus and methods
09/18/2014US20140266182 Vertical Hall Effect Sensor with Offset Reduction
09/18/2014US20140264680 Non-Volatile Memory Devices and Methods of Fabricating the Same
09/18/2014US20140264679 Logic chip including embedded magnetic tunnel junctions
09/18/2014US20140264678 Packaging for an electronic device
09/18/2014US20140264676 Forming magnetic microelectromechanical inductive components
09/18/2014US20140264675 Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
09/18/2014US20140264674 Storage element and memory
09/18/2014US20140264673 Magnetoresistive element and magnetic memory
09/18/2014US20140264672 Magnetoresistive random access memory devices and methods of manufacturing the same
09/18/2014US20140264671 Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions
09/18/2014US20140264670 Cell design for embedded thermally-assisted mram
09/18/2014US20140264669 Magnetic memory element
09/18/2014US20140264668 Logic chip including embedded magnetic tunnel junctions
09/18/2014US20140264667 Vertical Hall Effect Element With Structures to Improve Sensitivity
09/18/2014US20140264666 Cell design for embedded thermally-assisted mram
09/18/2014US20140264665 Reader Sensor Structure and its Method of Construction
09/18/2014US20140264664 Parallel shunt paths in thermally assisted magnetic memory cells
09/18/2014US20140264663 Memory cells, methods of fabrication, semiconductor device structures, and memory systems
09/18/2014US20140264657 Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor
09/18/2014US20140264516 Methods of forming patterns and methods of manufacturing semiconductor devices using the same
09/18/2014US20140264511 Spin hall effect assisted spin transfer torque magnetic random access memory
09/18/2014US20140264463 Integration of Magneto-Resistive Random Access Memory and Capacitor
09/18/2014DE102014103275A1 Chipbaugruppe mit isoliertem Stift, isolierter Kontaktstelle oder isoliertem Chipträger und Verfahren zu ihrer Herstellung Chip package with insulated pin, isolated or insulated pad chip carrier and process for their preparation
09/17/2014EP2779259A2 Magnetoresistive structures and magnetic random-access memory devices including the same
09/16/2014US8837924 Vacuum heating/cooling apparatus and manufacturing method of magnetoresistance element
09/16/2014US8837209 Magnetic memory cell and magnetic random access memory
09/16/2014US8836438 Oscillator element and method for producing the oscillator element
09/16/2014US8836061 Magnetic tunnel junction with non-metallic layer adjacent to free layer
09/16/2014US8836060 Spin device, driving method of the same, and production method of the same
09/16/2014US8836058 Electrostatic control of magnetic devices
09/16/2014US8836056 Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
09/16/2014US8836000 Bottom-type perpendicular magnetic tunnel junction (pMTJ) element with thermally stable amorphous blocking layers
09/16/2014US8835889 Parallel shunt paths in thermally assisted magnetic memory cells
09/16/2014US8835268 Method for manufacturing semiconductor device
09/16/2014US8835256 Memory array with self-aligned epitaxially grown memory elements and annular FET
09/12/2014WO2014136855A1 Planarization method, substrate treatment system, mram manufacturing method, and mram element
09/11/2014US20140258626 Electronic devices having semiconductor memory unit
09/11/2014US20140256061 Method of Etching MTJ Using CO Process Chemistries
09/11/2014US20140253115 Magnetic field current sensors
09/11/2014US20140252519 Magnetoresistive structures, magnetic random-access memory devices including the same and methods of manufacturing the magnetoresistive structure
09/11/2014US20140252518 High Moment Wrap-Around Shields for Magnetic Read Head Improvements
09/11/2014US20140252517 Thin Seeded Antiferromagnetic Coupled Side Shield for Sensor Biasing Applications
09/11/2014US20140252516 Magnetic Random Access Memory Cells with Isolating Liners
09/11/2014US20140252515 Magnetic electronic device and manufacturing method thereof
09/11/2014US20140252514 Magnetic sensor and method of fabricating the same
09/11/2014US20140252513 Elongated Magnetoresistive Tunnel Junction Structure
09/11/2014US20140252439 Mram having spin hall effect writing and method of making the same
09/11/2014US20140252438 Three-Dimensional Magnetic Random Access Memory With High Speed Writing
09/11/2014DE102013107074A1 Längliche Magnetoresistive Tunnelübergangs-Struktur Elongated magnetoresistive tunnel junction structure
09/10/2014EP2775315A1 Magnetic sensor
09/09/2014US8829582 Semiconductor device including memory cell having charge accumulation layer
09/09/2014US8828742 Method of manufacturing magnetoresistive effect element that includes forming insulative sidewall metal oxide layer by sputtering particles of metal material from patterned metal layer
09/04/2014US20140248719 Mtj manufacturing method utilizing in-situ annealing and etch back
09/04/2014US20140248718 Patterning of magnetic tunnel junction (mtj) film stacks
09/04/2014US20140247653 Electric field assisted mram and method for using the same
09/04/2014US20140247648 Electronic device
09/04/2014US20140247647 Electronic device and method for fabricating the same
09/04/2014US20140246742 Semiconductor device
09/04/2014US20140246741 Magnetoresistive memory cell and method of manufacturing the same
09/04/2014DE102006035661B4 Magnetfelderfassungsvorrichtung und Verfahren zu deren Einstellung Magnetic field detecting device and methods of setting
09/02/2014US8824108 Magneto-resistance effect element, magnetic head assembly, magnetic recording and reproducing apparatus, and magnetic memory
09/02/2014US8823119 Magnetic device having a metallic glass alloy
09/02/2014US8822237 Hole first hardmask definition
09/02/2014US8822234 Method of fabricating a semiconductor device
09/02/2014US8822046 Stack with wide seed layer
08/2014
08/28/2014WO2014130301A1 Stt-mram design enhanced by switching current induced magnetic field
08/28/2014US20140242773 Phase change memory device having self-aligned bottom electrode and fabrication method thereof
08/28/2014US20140242728 Method of etching a magnesium oxide film
08/28/2014US20140241047 Self-aligned process for fabricating voltage-gated mram
08/28/2014US20140239426 Current sensors and methods
08/27/2014EP2768576A1 Electrode apparatus and method of manufacturing electrodes
08/26/2014US8817531 Magnetic random access memory device and method for producing a magnetic random access memory device
08/21/2014US20140233305 Magnetic random access memory having increased on/off ratio and methods of manufacturing and operating the same
08/21/2014US20140233297 Graphene Ferroelectric Device and Opto-Electronic Control of Graphene Ferroelectric Memory Device
08/21/2014US20140231943 Memory element and memory device
08/21/2014US20140231942 Semiconductor device and method for fabricating the same
08/21/2014US20140231941 Magnetoresistive structures, memory devices including the same, and methods of manufacturing the magnetoresistive structures and the memory devices
08/21/2014US20140231940 Stt-mram design enhanced by switching current induced magnetic field
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