| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 04/04/2012 | CN102403027A 存储元件和存储装置 Memory element and the memory device |
| 04/03/2012 | US8150657 Physical quantity measuring instrument and signal processing method thereof |
| 03/29/2012 | WO2012019135A3 Mram device and integration techniques compatible with logic integration |
| 03/29/2012 | US20120077288 Semiconductor device and method of manufacturing the same |
| 03/29/2012 | US20120074511 Magnetic memory and method of manufacturing the same |
| 03/28/2012 | EP2434556A1 Ferromagnetic tunnel junction structure and magnetoresistive element using same |
| 03/28/2012 | EP2434540A1 Magnetic memory element and storage device using same |
| 03/28/2012 | EP2433316A1 Patterning and contacting of magnetic layers |
| 03/28/2012 | EP2290380B1 Arrangements for an integrated sensor |
| 03/28/2012 | CN101601148B Thin film laminated body, thin film magnetic sensor using the thin film laminated body and method for manufacturing the thin film laminated body |
| 03/22/2012 | WO2012036282A1 Magnetoresistive element and magnetic random-access memory |
| 03/22/2012 | US20120068779 Oscillators and methods of manufacturing and operating the same |
| 03/22/2012 | US20120068698 Structure of tmr and fabrication method of integrated 3-axis magnetic field sensor and sensing circuit |
| 03/22/2012 | US20120068283 Semiconductor storage device and method of manufacturing the same |
| 03/22/2012 | US20120068236 Non-uniform switching based non-volatile magnetic based memory |
| 03/21/2012 | EP2430675A1 Magnetoelectronic components and measurement method |
| 03/21/2012 | EP2430661A1 Magnetic tunnel junction device and fabrication |
| 03/21/2012 | EP2290381B1 Arrangements for an integrated sensor |
| 03/21/2012 | EP2290379B1 Arrangements for an integrated sensor |
| 03/21/2012 | EP1974223B1 Arrangements for an integrated sensor |
| 03/21/2012 | CN102386322A Method for improving aligning accuracy |
| 03/21/2012 | CN102385043A Magnetic tunnel junction (MTJ) triaxial magnetic field sensor and packaging method thereof |
| 03/21/2012 | CN101632183B Magnetic coupler element and magnetic coupling type isolator |
| 03/21/2012 | CN101233578B Semiconductor memory |
| 03/15/2012 | WO2012033571A1 Aggregated spin-tprque nano-oscillators |
| 03/15/2012 | US20120064640 Spin transfer MRAM device with novel magnetic synthetic free layer |
| 03/15/2012 | US20120061782 Spin wave device |
| 03/15/2012 | US20120061780 Storage element and memory device |
| 03/14/2012 | CN202167545U 低噪声低失调电压的霍尔传感器 Low Noise Low offset voltage of the Hall sensor |
| 03/14/2012 | CN102379033A 半导体器件 Semiconductor devices |
| 03/14/2012 | CN102376875A Forming method of magnetoresistive memory |
| 03/14/2012 | CN102376874A Semiconductor magneto-dependent sensor based on two-dimensional electro gas material and manufacturing method thereof |
| 03/14/2012 | CN102376873A 磁存储器元件 The magnetic memory element |
| 03/14/2012 | CN102376872A Metal oxide semiconductor (MOS) transistor based on hall effect |
| 03/14/2012 | CN102376871A Magnetic tunnel junction memory unit and manufacturing method thereof |
| 03/14/2012 | CN102376739A Electronic system, memory device and providing method thereof |
| 03/14/2012 | CN102376738A Magnetic memory device and method of manufacturing the same |
| 03/08/2012 | WO2012028664A1 Magnetic device, and method for reading from and writing to said device |
| 03/08/2012 | WO2012027861A1 Magnetic memory cell |
| 03/08/2012 | WO2012009524A3 Magnetic storage element comprising a functional layer in the pinned layers and manufacturing method thereof |
| 03/08/2012 | US20120058575 Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same |
| 03/01/2012 | WO2012025841A1 METHOD FOR PREPARING A GaAS SUBSTRATE FOR A FERROMAGNETIC SEMICONDUCTOR, METHOD FOR MANUFACTURING ONE SUCH SEMICONDUCTOR, RESULTING SUBSTRATE AND SEMICONDUCTOR, AND USES OF SAID SEMICONDUCTOR |
| 03/01/2012 | US20120049303 Semiconductor device |
| 03/01/2012 | US20120049302 Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory |
| 03/01/2012 | DE102011081474A1 Dünnwafer-Stromsensoren Thin wafer flow sensors |
| 03/01/2012 | DE102004030174B4 Magnetischer Direktzugriffsspeicher The magnetic random access memory |
| 02/29/2012 | EP2423697A1 Ultra-sensitive magnetoimpedance sensor |
| 02/29/2012 | EP2286473B1 Three-layer magnetic element, method for the production thereof, magnetic field sensor, magnetic memory, and magnetic logic gate using such an element |
| 02/29/2012 | EP1555694B1 Spin transistor using spin filter effect and nonvolatile memory using spin transistor |
| 02/29/2012 | CN1954228B Improved permalloy sensor |
| 02/29/2012 | CN101689601B Process for producing magnetic device, apparatus for producing magnetic device, and magnetic device |
| 02/23/2012 | WO2012023252A1 Magnetic tunnel junction element |
| 02/23/2012 | WO2012023157A1 Magnetoresistance element and semiconductor storage device |
| 02/23/2012 | WO2011149274A3 Magnetic tunnel junction device having amorphous buffer layers that are magnetically connected together and that have perpendicular magnetic anisotropy |
| 02/22/2012 | EP2421063A1 Ferromagnetic tunnel junction structure, and magnetoresistive effect element and spintronics device each comprising same |
| 02/22/2012 | EP2419933A2 Magnetic tunnel junction (mtj) and methods, and magnetic random access memory (mram) employing same |
| 02/22/2012 | CN102361062A Preparation method of p-Si-based hetero-structure with large magneto-resistance effect |
| 02/22/2012 | CN101802979B 化合物半导体衬底、化合物半导体衬底的制造方法以及半导体器件 A compound semiconductor substrate, a method of manufacturing a compound semiconductor substrate and a semiconductor device |
| 02/22/2012 | CN101789488B 用于霍尔元件的新型薄膜材料 New film material for the Hall element |
| 02/16/2012 | WO2012021297A1 Magnetic tunneling junction elements having a biaxial anisotropy |
| 02/15/2012 | EP2417646A1 Spin-valve or tunnel-junction radio-frequency oscillator, process for adjusting the frequency of such an oscillator and network consisting of a plurality of such oscillators |
| 02/15/2012 | CN102356328A Magnetic detection device |
| 02/15/2012 | CN102352485A Preparation method of Si-doped AlN diluted magnetic semiconductor film |
| 02/15/2012 | CN102351236A Preparation method of Fe doped CuO diluted magnetic semiconductor material |
| 02/15/2012 | CN101840993B 一种具有交换偏置效应的多层膜结构及其制作方法 A multilayer film structure and production methods to exchange bias effect has |
| 02/09/2012 | US20120034712 Semiconductor device and method of manufacturing the same |
| 02/09/2012 | US20120033478 Non-volatile memory device and sensing method for forming the same |
| 02/09/2012 | DE102010033705A1 Test system for testing magnetic characterization of semiconductor component e.g. Hall sensor, has an arrangement for creating magnetic field, comprising a coil with iron core and calibrated magnetic field sensor attached to iron core |
| 02/08/2012 | EP1517383B1 Magnetoresistive device and magnetic memory device |
| 02/08/2012 | CN102347439A Method for forming magnetoresistive random access memory |
| 02/02/2012 | WO2012014415A1 Low-resistance and high-efficiency spin injection element using thin film of rock salt structure as seed |
| 02/02/2012 | WO2012014376A1 Microcomputer for detecting magnetic field, and method for detecting magnetic field |
| 02/02/2012 | WO2012014132A1 Writeable magnetic element |
| 02/02/2012 | US20120029811 Pnd repositioning detector for better navigation accuracy in a car |
| 02/02/2012 | US20120028373 Bi-layer hard mask for the patterning and etching of nanometer size MRAM devices |
| 02/01/2012 | EP2413153A1 Magnetic detection device |
| 02/01/2012 | EP2412003A1 Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque mram devices |
| 02/01/2012 | CN202134578U 集成霍尔器件 Integrated Hall devices |
| 02/01/2012 | CN102339734A Production method of cylindrical semiconductor device with cross section being circular ring |
| 02/01/2012 | CN101512369B 磁性检测装置 Magnetic detection device |
| 01/26/2012 | WO2012011161A1 Semiconductor storage device |
| 01/26/2012 | WO2012010319A1 Method for producing a tmr component |
| 01/26/2012 | DE19936378B4 Magnetowiderstands-Dünnschichtelement vom Spin-Valve-Typ Magnetoresistive thin-film element of the spin-valve type |
| 01/26/2012 | DE102010038287A1 Magnetfeld-Sensorvorrichtung, entsprechendes Herstellungsverfahren und Magnetfeld-Messverfahren Magnetic field sensor apparatus, method of manufacture and magnetic field measurement method |
| 01/25/2012 | EP2410589A1 Method for producing a TMR construction element |
| 01/25/2012 | EP2410588A2 Magnetic Tunnel Junction Structure |
| 01/25/2012 | CN1864229B Magnetic tunnel junction device and writing/reading method for said device |
| 01/25/2012 | CN102334207A Magnetic tunnel junction device and fabrication |
| 01/25/2012 | CN102332297A Magnetic storage element and magnetic memory |
| 01/19/2012 | WO2012009524A2 Magnetic storage element utilizing improved pinned layer stack |
| 01/19/2012 | WO2012008349A1 Magnetic resistance element, magnetic memory cell and magnetic random access memory |
| 01/19/2012 | WO2011115794A3 Switching mechanism of magnetic storage cell and logic unit using current induced domain wall motions |
| 01/19/2012 | US20120012956 Magnetic sensor and magnetic memory |
| 01/12/2012 | WO2012004883A1 Magnetoresistive effect element and random access memory using same |
| 01/12/2012 | WO2012004882A1 Magnetic memory cell and magnetic random access memory |
| 01/11/2012 | EP2405504A1 Magnetic memory |
| 01/11/2012 | EP2404332A1 Magnetic tunnel junction device and fabrication |
| 01/11/2012 | EP2404296A1 A multi-state spin-torque transfer magnetic random access memory |
| 01/11/2012 | EP2011172B1 Magnetoresistive-effect arrangement and uses thereof |
| 01/11/2012 | EP1737055B1 Magnetoresistive element and its manufacturing method |