Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
07/2014
07/10/2014US20140191346 Magnetic memory devices including magnetic layers separated by tunnel barriers
07/10/2014US20140191345 Magnetic memory device and method of manufacturing the same
07/09/2014EP2752675A1 Mtj three-axis magnetic field sensor and encapsulation method thereof
07/09/2014CN103915563A 自旋阀磁电阻传感器材料结构 Spin valve magnetoresistance sensor material structure
07/09/2014CN103915562A 半导体结构及其制造方法 Semiconductor structure and manufacturing method
07/08/2014US8772888 MTJ MRAM with stud patterning
07/08/2014US8772887 Magnetic device
07/08/2014US8772886 Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer
07/08/2014US8772756 Nanowires, method of fabrication the same and uses thereof
07/08/2014US8771847 Reader stop-layers
07/03/2014US20140185371 Antiferromagnetic storage device
07/03/2014US20140184211 Hall device, magnetic sensor having same, and signal correcting method thereof
07/03/2014US20140183674 Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern
07/02/2014CN103907156A 用于自旋转移扭矩切换设备的耐热垂直磁各向异性耦合元件 Used to heat the perpendicular magnetic anisotropy coupling element spin transfer torque switching device
07/02/2014CN103904211A 一种基于垂直交换耦合的磁场探测器及其制备和使用方法 A magnetic field detector based on the vertical exchange coupling and its preparation and use
07/02/2014CN102176510B 磁电阻效应元件和使用它的磁电阻随机存取存储器 Magneto-resistance effect element and a magnetic resistance to use it a random access memory
07/01/2014US8767446 Multi-bit spin-momentum-transfer magnetoresistence random access memory with single magnetic-tunnel-junction stack
07/01/2014US8766382 MRAM cells including coupled free ferromagnetic layers for stabilization
06/2014
06/26/2014WO2014097520A1 Oxidation treatment device, oxidation method, and method for producing electronic device
06/26/2014WO2014097510A1 Method for manufacturing magnetoresistance effect element
06/26/2014US20140179026 Method for generating quantized anomalous hall effect
06/26/2014US20140177327 Voltage-controlled magnetic anisotropy (vcma) switch and magneto-electric memory (meram)
06/26/2014US20140177326 Electric field enhanced spin transfer torque memory (sttm) device
06/26/2014US20140175582 Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy
06/26/2014US20140175581 Magnetoresistive element having a novel cap multilayer
06/26/2014US20140175580 Magnetoresistive memory device and fabrictaion method
06/26/2014US20140175579 Method of producing nanopatterned articles, and articles produced thereby
06/26/2014US20140175578 Diffusionless transformations in mtj stacks
06/26/2014US20140175528 Semiconductor magnetic field sensors
06/26/2014US20140175428 Perpendicular magnetoresistive elements
06/26/2014US20140175382 Electrical device
06/26/2014US20140175373 Topological insulator structure
06/25/2014CN1924603B 磁场检测装置以及对其进行调整的方法 Magnetic field detecting device and method for adjusting its
06/25/2014CN103890598A 磁性传感器 Magnetic Sensors
06/25/2014CN103887428A 一种磁传感装置的制备工艺 A process for preparing a magnetic sensing device
06/25/2014CN103887427A 磁传感装置的制造工艺 The manufacturing process of the magnetic sensor apparatus
06/25/2014CN103887426A 磁存储器、在磁器件中使用的磁性结和提供磁性结的方法 Magnetic memory, a magnetic device for use in a magnetic junction, and a method providing a magnetic junction
06/25/2014CN103887425A 磁性结和磁存储器以及用于提供磁性结的方法 Magnetic junctions and magnetic memory and a method for providing a magnetic junction
06/25/2014CN103887424A 磁性结及其提供方法以及磁存储器 Junction to provide a method and a magnetic memory and a magnetic
06/25/2014CN103887423A 用于提供具有设计垂直磁各向异性的磁性结的方法和系统 To provide a method and system having a perpendicular magnetic anisotropy of the magnetic design of the junction
06/25/2014CN103887422A 磁阻存储器及其形成方法 And method of forming a magnetoresistive memory
06/25/2014CN103885005A 磁传感装置及其磁感应方法 The magnetic sensor device and method of the magnetic induction
06/25/2014CN102315241B 具有减小的amr效应的gmr传感器 Gmr sensor has a reduced effect of amr
06/24/2014US8760152 Device for detecting the position of a gear step selector lever and motor vehicle equipped with same
06/19/2014WO2014091874A1 Magnetic material and method for producing same
06/19/2014WO2014091714A1 Magnetic sensor and magnetic sensor device, and magnetic sensor manufacturing method
06/19/2014US20140170779 Coherent spin field effect transistor
06/19/2014US20140170778 Method of manufacturing magnetoresistive element and method of processing magnetoresistive film
06/19/2014US20140170776 Mtj stack and bottom electrode patterning process with ion beam etching using a single mask
06/19/2014US20140170775 HPC Workflow for Rapid Screening of Materials and Stacks for STT-RAM
06/19/2014US20140169088 Spin hall effect magnetic apparatus, method and applications
06/19/2014US20140169085 Voltage-controlled magnetic memory element with canted magnetization
06/19/2014US20140169084 Memory device
06/19/2014US20140169083 Magnetoresistive layer structure with voltage-induced switching and logic cell application
06/19/2014US20140169081 Flexible Memory and its Fabrication Process
06/19/2014US20140169061 Method of implementing a ferroelectric tunnel junction, device comprising a ferroelectric tunnel junction and use of such a device
06/19/2014US20140167814 Magnetic field controlled reconfigurable semiconductor logic device and method for controlling the same
06/19/2014US20140167749 Hall sensor and method of manufacturing the same
06/19/2014US20140167193 Semiconductor device with integrated magnetic element provided with a barrier structure against metal contamination, and manufacturing
06/19/2014US20140167192 Semiconductor Devices Having Insulating Substrates and Methods of Formation Thereof
06/19/2014US20140167191 Method for reducing size and center positioning of magnetic memory element contacts
06/19/2014US20140166985 Rectifying device, transistor, and rectifying method
06/18/2014EP2744002A1 Memory device
06/18/2014CN103872243A Method for manufacturing magnetic tunnel junction based on magnesium oxide target
06/18/2014CN103872242A Thermal spin torqure transfer magnetoresistive random access memory
06/12/2014US20140160835 Spin transfer torque magnetic memory device
06/12/2014US20140159179 Two-axis magnetic field sensor having reduced compensation angle for zero offset
06/12/2014US20140159178 Magnetic field sensor
06/12/2014US20140159177 Magnetoresistive element and magnetic memory
06/12/2014US20140159176 Magnetoresistive element and method of manufacturing the same
06/12/2014US20140159175 Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect
06/12/2014US20140159121 Nonvolatile magnetic element and nonvolatile magnetic device
06/12/2014DE102012024062A1 Magnetfeldsensor Magnetic field sensor
06/11/2014EP2741342A2 Magnetic field sensor
06/11/2014EP2741295A1 Spin transfer torque magnetic memory device
06/11/2014EP2741095A1 Magnetic sensor and method for fabricating the same
06/11/2014CN103858246A Strain induced reduction of switching current in spintransfer torque switching devices
06/11/2014CN103855299A Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer
06/11/2014CN103855298A Thin film with tuned anisotropy and magnetic moment
06/11/2014CN103855297A MAGNETIC JUNCTION, method for providing same, and magnetic memory comprising same
06/11/2014CN101114693B Semiconductor device using magnetic domain wall moving
06/10/2014US8750031 Test structures, methods of manufacturing thereof, test methods, and MRAM arrays
06/10/2014US8750029 Magnetoresistive effect element and magnetic memory
06/10/2014US8749005 Magnetic field sensor and method of fabricating a magnetic field sensor having a plurality of vertical hall elements arranged in at least a portion of a polygonal shape
06/10/2014US8748197 Reverse partial etching scheme for magnetic device applications
06/05/2014WO2014084496A1 Spin modulator having phase adjustment means and modulation method thereof
06/05/2014WO2014059083A3 Improved seed layer for multilayer magnetic materials
06/05/2014US20140153327 Voltage controlled spin transport channel
06/05/2014US20140152377 Ferroelectric nanoshell devices
06/05/2014US20140151831 Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer
06/05/2014US20140151829 Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
06/05/2014US20140151828 Spin-torque magnetoresistive structures
06/05/2014US20140151827 Magnetic random access memory having perpendicular enhancement layer
06/05/2014US20140151826 Graphene magnetic tunnel junction spin filters and methods of making
06/05/2014US20140151825 Giant magneto-resistive sensor and manufacturing method thereof
06/05/2014US20140151770 Thin film deposition and logic device
06/05/2014DE102013113186A1 Halbleiterpackages, Systeme und Verfahren für deren Ausbildung Semiconductor packages, systems, and methods for their training
06/05/2014DE102012221833A1 Wandler mit zumindest einer Elektrode eines ersten Typs, einer Elektrode eines zweiten Typs und zumindest einem Ferroelektret Converter having at least one electrode of a first type, an electrode of a second type and at least one ferroelectret
06/04/2014EP2738770A1 Low resistance area magnetic stack
06/04/2014EP2738767A1 Magnetic element with coupled side shield
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