Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
10/2014
10/30/2014US20140322829 Semicondcutor device and method for fabricating the same
10/30/2014US20140322828 Method for Manufacturing Magnetoresistance Component
10/30/2014US20140321199 Nano Multilayer Film, Field Effect Tube, Sensor, Random Accessory Memory and Preparation Method
10/30/2014US20140321193 3d variable resistance memory device and method of manufacturing the same
10/30/2014US20140319633 Magnetic memory element and memory apparatus having multiple magnetization directions
10/30/2014US20140319632 Perpendicular stt-mram having permeable dielectric layers
10/30/2014US20140319589 Magnetic Dynamic Random Access Nonvolatile Semiconductor Memory (MRAM)
10/30/2014US20140319521 Memory element, memory apparatus
10/28/2014US8872615 Magnetic nanoclusters
10/28/2014US8872547 Nanomagnetic logic gate and an electronic device
10/28/2014US8872292 Push-pull magnetoresistive sensor bridges and mass fabrication method
10/28/2014US8872291 Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same
10/28/2014US8871531 Parallel shunt paths in thermally assisted magnetic memory cells
10/28/2014US8871530 Free layers with iron interfacial layer and oxide cap for high perpendicular anisotropy energy density
10/28/2014US8871529 Method for manufacturing integrated circuit structure with magnetoresistance component
10/28/2014US8871528 Medium patterning method and associated apparatus
10/28/2014US8871364 Perovskite manganese oxide thin film
10/28/2014US8871102 Method and system for fabricating a narrow line structure in a magnetic recording head
10/23/2014US20140315329 Method of manufacturing a magnetoresistive-based device
10/23/2014US20140312441 Novel spin hall effect magnetic-ram
10/23/2014US20140312385 Electronic elements based on quasitwo-dimensional electron/hole gas at charged domain walls in ferroelectrics
10/21/2014US8867254 Flexible memory and its fabrication process
10/21/2014US8866244 Semiconductor device
10/21/2014US8866243 Ferromagnetic tunnel junction structure and magnetoresistive element using the same
10/21/2014US8866242 MTJ structure and integration scheme
10/21/2014US8866207 Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory
10/21/2014US8866116 Semiconductor memory devices having predetermined conductive metal levels and methods of fabricating the same
10/21/2014US8865481 MRAM device and integration techniques compatible with logic integration
10/21/2014US8865326 Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same
10/16/2014US20140308760 Perpendicular spin transfer torque memory (sttm) device with enhanced stability and method to form same
10/16/2014US20140308759 Method of forming semiconductor device having magnetic tunnel junction and related device
10/16/2014US20140308758 Patterning magnetic memory
10/16/2014US20140306305 Magnetic Tunnel Junction for MRAM Applications
10/16/2014US20140306304 Method to make integrated device using oxygen ion implantation
10/16/2014US20140306303 Seed Layer for Perpendicular Magnetic Anisotropy (PMA) Thin Film
10/16/2014US20140306302 Fully Compensated Synthetic Antiferromagnet for Spintronics Applications
10/16/2014US20140306277 Semiconductor storage device
10/14/2014US8861136 Spin conduction element and magnetic sensor and magnetic head using spin conduction
10/14/2014US8860159 Spintronic electronic device and circuits
10/14/2014US8860158 High speed STT-MRAM with orthogonal pinned layer
10/14/2014US8860157 Memory cell with phonon-blocking insulating layer
10/14/2014US8860155 Magnetic tunnel junction device and its fabricating method
10/14/2014US8860106 Spin filter and driving method thereof
10/14/2014US8860105 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
10/14/2014US8860006 Spin transistor having multiferroic gate dielectric
10/14/2014US8859299 HPC workflow for rapid screening of materials and stacks for STT-RAM
10/09/2014WO2014163121A1 Current-perpendicular-to-plane magneto-resistance effect element
10/09/2014WO2014162730A1 Sensor element with temperature compensating function, and magnetic sensor and electric power measuring device which use same
10/09/2014US20140299953 Write current reduction in spin transfer torque memory devices
10/09/2014US20140299952 Magnetic tunnel junction device and method for fabricating the same
10/09/2014US20140299951 Novel hybrid method of patterning mtj stack
10/09/2014US20140299950 Electronic devices having semiconductor memory units
10/08/2014EP2787528A1 Recording element and recording device
10/07/2014US8854876 Perpendicular magnetization storage element and storage device
10/07/2014US8853807 Magnetic devices and methods of fabricating the same
10/07/2014US8852963 Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor having a low-coercivity reference layer
10/07/2014US8852960 Method of fabricating semiconductor device and apparatus for fabricating the same
10/07/2014US8852676 Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same
10/02/2014WO2014157735A1 Planarization method, substrate processing system, and memory manufacturing method
10/02/2014WO2014156123A1 Compound semiconductor stack and semiconductor device
10/02/2014WO2014156108A1 Magnetic sensor and method for detecting magnetism thereof
10/02/2014WO2014155908A1 Hall electromotive force signal detection circuit, current sensor thereof, and hall element driving method
10/02/2014WO2014154497A1 Spin torque magnetic integrated circuit
10/02/2014US20140297968 Magnetic tunneling junction devices, memories, memory systems, and electronic devices
10/02/2014US20140295580 Method for manufacturing semiconductor device and manufacturing apparatus
10/02/2014US20140295579 Method of patterning mtj stack
10/02/2014US20140293683 Magneto-resistive effect element
10/02/2014US20140293475 Cpp-type magnetoresistive element including a rear bias structure and lower shields with inclined magnetizations
10/02/2014US20140293474 Cpp-type magnetoresistance effect element and magnetic disk device using side shield layers
10/02/2014US20140291789 Semiconductor magnetoresistive random-access memory (mram) device and manufacturing method thereof
10/02/2014US20140291788 Magnetoresistive Devices and Methods for Manufacturing Magnetoresistive Devices
10/02/2014US20140291663 High stability spintronic memory
10/02/2014DE102014104114A1 Magnetoresistive Bauelemente und Verfahren zur Herstellung von magnetoresistiven Bauelementen Magnetoresistive devices and methods for the preparation of magnetoresistive devices
10/01/2014EP2784020A1 Spin torque magnetic integrated circuit
09/2014
09/30/2014US8848435 Magnetic resistance memory apparatus having multi levels and method of driving the same
09/30/2014US8848434 Magnetic resistance memory apparatus having multi levels and method of driving the same
09/30/2014US8848432 Magnetoresistive elements and memory devices including the same
09/30/2014US8847341 Magnetic memory device
09/30/2014US8846529 Electroless plating of cobalt alloys for on chip inductors
09/25/2014WO2014151820A1 Magnetic tunnel junction sensors and methods for using the same
09/25/2014WO2014149448A1 Packaging for an electronic circuit
09/25/2014WO2014148586A1 Magnetoresistive element and manufacturing method thereof
09/25/2014WO2014148437A1 Magnetic sensor
09/25/2014US20140287537 Method of Fabricating a Magnetoresistive Element
09/25/2014US20140287536 Method of manufacturing a magnetoresistive-based device with via integration
09/25/2014US20140287534 Highly sensitive magnetic tunable heterojunction device for resistive switching
09/25/2014US20140286084 Magnetoresistive element
09/25/2014US20140284743 Magnetic storage device
09/25/2014US20140284742 Magnetoresistive element
09/25/2014US20140284741 Storage element and storage apparatus
09/25/2014US20140284740 Memory circuit and method of forming the same using reduced mask steps
09/25/2014US20140284739 Memory circuit and method of forming the same using reduced mask steps
09/25/2014US20140284738 Magnetic memory and manufacturing method thereof
09/25/2014US20140284737 Magnetic memory and manufacturing method thereof
09/25/2014US20140284736 Magnetoresistive effect element and method of manufacturing magnetoresistive effect element
09/25/2014US20140284735 Magnetoresistance effect element
09/25/2014US20140284734 Magnetic random access memory
09/25/2014US20140284733 Magnetoresistive element
09/25/2014US20140284732 Magnetoresistive effect element and manufacturing method thereof
09/25/2014US20140284592 Magnetoresistive effect element and manufacturing method thereof
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