Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
01/2012
01/11/2012CN102315383A Storage element, method for manufacturing storage element, and memory
01/11/2012CN102315382A Hall sensor
01/11/2012CN102315241A Gmr sensors having reduced amr effects
01/11/2012CN102313617A Micro-electronics pressure sensor and preparation process thereof
01/11/2012CN102313563A Hall sensor
01/05/2012WO2012002156A1 Magnetic memory element, magnetic memory
01/05/2012WO2012001555A1 Magnetic random access memory device and method for producing a magnetic random access memory device
01/05/2012DE102005047414B4 Magnetoresistives Sensormodul und Verfahren zum Herstellen desselben Of the same magnetoresistive sensor module and process for producing
01/05/2012DE102005047413B4 Magnetoresistives Sensorelement und Verfaheren zum Durchführen eines On-Wafer-Funktionstests, sowie Verfahren zur Herstellung von Magnetfeldsensorelementen und Verfahren zur Herstellung von Magnetfeldsensorelementen mit On-Wafer-Funktionstest The magnetoresistive sensor element and Verfaheren for performing an on-wafer functional testing, as well as methods for the production of magnetic sensor elements and methods for the production of magnetic field sensing elements with on-wafer functional testing
01/05/2012CA2785625A1 Magnetic random access memory device and method for producing a magnetic random access memory device
01/04/2012EP2402770A1 Current sensor
01/04/2012EP1526588B1 Magnetoresistance effect element and magnetic memory unit
12/2011
12/29/2011US20110316103 Storage element, method for manufacturing storage element, and memory
12/28/2011CN102299257A 一种制备氧化锌掺铁室温磁性半导体的方法 A zinc-doped iron oxide magnetic semiconductors were prepared at room temperature
12/28/2011CN102299256A 磁电随机存储单元及具有其的磁电随机存储器 Magnetic random access memory unit, and having the same magnetic random access memory
12/28/2011CN102298962A 一种复合自由层stt-ram存储单元 A composite free layer stt-ram storage unit
12/28/2011CN101777569B 磁存储单元 Magnetic memory cells
12/27/2011US8085511 Magnetoresistance effect element having resistance adjusting layer and thin-film insertion layer
12/27/2011US8085035 Hall element and magnetic sensor
12/21/2011CN202084582U 新型组合霍尔元件 The new combination of Hall elements
12/21/2011CN202084581U 一种压电材料层串接的磁电层合材料结构 A piezoelectric laminate structure magnetic material layer concatenated
12/21/2011CN202083786U Film magnetoresistance sensing element, combination of a plurality of sensing elements, and electronic device coupled with combination
12/21/2011CN102292815A 磁性隧道结(mtj)存储元件和具有mtj的自旋转移力矩磁阻随机存取存储器(stt-mram)单元 A magnetic tunnel junction (mtj) storage element having mtj of Spin Transfer Torque Magnetoresistive Random Access Memory (stt-mram) unit
12/21/2011CN102288927A 巨磁阻自旋阀磁敏传感器及其制造方法 Giant magnetoresistance spin valve magnetic sensor and manufacturing method thereof
12/15/2011WO2011155390A1 Oscillation element and method for manufacturing oscillation element
12/14/2011EP2395366A1 Magnetic detector
12/14/2011CN102280576A 用于芯片上柔性电路的结构和方法 On-chip structure and method for flexible circuit
12/14/2011CN102280575A 一种环形结构的制作方法 A method of making a ring configuration
12/14/2011CN102280574A 薄膜磁电阻传感元件、多个传感元件的组合及与该组合耦合的电子装置 A thin film magnetoresistive sensor element, a plurality of sensing elements and the electronic device coupled with the composition
12/14/2011CN102280136A 磁存储器元件和磁存储器器件 The magnetic memory element and the magnetic memory device
12/13/2011US8076927 Magnetic-field sensor and method of calibrating a magnetic-field sensor
12/08/2011WO2011152400A1 Magnetoresistance effect element and magnetic memory
12/08/2011WO2011152281A1 Magnetoresistance effect element and magnetic memory
12/08/2011WO2011150665A1 Magnetic multilayer nano film for magnetic sensor and manufacturing method thereof
12/08/2011US20110298067 Magnetic memory element and magnetic memory
12/08/2011US20110297909 Magnetic memory element and magnetic memory
12/08/2011DE102011101604A1 Magnetic field sensor, has vertical hall sensor whose supply voltage terminals are connected with terminals of another vertical hall sensor, where former and latter hall sensors comprise hall voltage taps
12/07/2011EP2392029A1 Magnetic tunnel junction comprising a tunnel barrier, pinned layer and top electrode formed in a damascene-type process
12/07/2011CN102272965A 具有存储层材料的磁性元件 Storage layer material having a magnetic element
12/07/2011CN102272964A 具有放射状阻挡体的磁存储器单元 A magnetic memory cell having a radial blocking body
12/07/2011CN102272927A 半导体存储器的制造方法 The method of manufacturing a semiconductor memory
12/07/2011CN102270737A 一种具有内禀铁磁性ZnO基稀磁半导体薄膜及其制备方法 Having intrinsic ferromagnetic ZnO-based diluted magnetic semiconductor thin film and its preparation method
12/07/2011CN102270736A 一种用于磁敏传感器的磁性纳米多层膜及其制造方法 Magnetic nanomultilayers its manufacturing method for magnetic sensors
12/07/2011CN101740715B 一种用高能重离子辐照提高、调制半金属性薄膜材料的磁致电阻的方法 A high-energy heavy ion irradiation improved modulation method magnetoresistance materials, semi-metallic film
12/07/2011CN101145571B 采用磁畴壁移动的存储器装置 A memory device using magnetic domain wall movement
12/07/2011CN101111763B 磁性传感器 Magnetic Sensors
12/07/2011CN101060160B 存储元件和存储器 And a memory storage element
12/01/2011WO2011149274A2 Magnetic tunnel junction device having amorphous buffer layers that are magnetically connected together and that have perpendicular magnetic anisotropy
12/01/2011WO2011148944A1 Thin film magnetic device and method for manufacturing same
12/01/2011WO2011148577A1 Hole element circuit
11/2011
11/30/2011EP2390380A1 Sputtering equipment, sputtering method and method for manufacturing an electronic device
11/30/2011CN102263121A 基于石墨烯的霍尔集成电路及其制备方法 Graphene-based Hall IC and its preparation method
11/30/2011CN101211652B 利用磁畴壁移动的信息存储装置和制造该装置的方法 Storage means using information magnetic domain wall movement and a method of manufacturing the apparatus
11/24/2011WO2011145146A1 Tunnel magnetoresistance effect element, and magnetic memory cell and magnetic random access memory employing same
11/24/2011US20110284977 Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy
11/23/2011CN101546807B Magnetoresistive element and magnetic memory
11/23/2011CN101276877B Method for producing high-precision hall remote-rod potentiometer
11/22/2011US8063633 Magnetoresistive magnetic field sensor structure
11/22/2011US8063627 Linear sensor having angular redirection and cable displacement
11/17/2011WO2011141969A1 Magnetic field angle measurement device and rotation angle measurement apparatus using same
11/17/2011US20110278905 Position detector, seat belt retractor having this position detector, and seat belt apparatus having this seat belt retractor
11/16/2011CN102246327A Magnetoresistance effect element and magnetic memory cell and magnetic random access memory using same
11/16/2011CN101438178B Magnetic device
11/10/2011US20110275163 Zr-SUBSTITUTED BaTiO3 FILMS
11/10/2011DE102005008772B4 Chip mit einem Bauelement in einem schrägen Bereich mit einer verringerten Stressabhängigkeit Chip with a component in an oblique area with a reduced stress dependence
11/09/2011EP2385548A1 Magnetic memory element and driving method therefor
11/09/2011EP1612865B1 Magnetoresistive element and magnetic memory device
11/09/2011EP1527324B1 Magnetoresistive sensor
11/09/2011CN202033467U Vertical-structure giant magnetoresistance magnetic sensor
11/09/2011CN1591675B Magnetic dual element with dual magnetic states
11/09/2011CN101300735B Radio-frequency oscillator with spin-polarised current
11/03/2011WO2011135984A1 Semiconductor recording device
11/03/2011DE102010018874A1 Wheatstonebrücke mit XMR-Spinvalve-Systemen Wheatstone bridge with XMR spin valve systems
11/02/2011EP2382675A1 Magnetic element with storage layer materials
11/02/2011EP1382046B1 Compounds having giant magnetoresistance and spin-polarized tunnels, the production thereof and their use
11/02/2011CN102231423A Giant magneto-impedance (GMI) thin film material and preparation method thereof
11/01/2011US8049204 Semiconductor memory device having variable resistance element and method for manufacturing the same
10/2011
10/27/2011WO2011132503A1 Energy-assisted magnetic recording head and magnetic recording device
10/27/2011WO2011106329A4 Structure and fabrication method for resistance-change memory cell in 3-d memory
10/27/2011US20110260270 MR enhancing layer (MREL) for spintronic devices
10/27/2011US20110260224 Thin film magnetic memory device capable of conducting stable data read and write operations
10/26/2011EP2381267A1 Structure and method for flex circuit on a chip
10/26/2011CN102227514A Sputtering equipment, sputtering method and method for manufacturing electronic device
10/26/2011CN102227013A Preparation method of self-supporting multiferroics composite film
10/25/2011US8045299 Method and apparatus for oxidizing conductive redeposition in TMR sensors
10/25/2011US8043732 Memory cell with radial barrier
10/20/2011WO2011066324A3 Magnetic tunnel junction device and fabrication
10/19/2011EP1610339B1 Magnetic memory device and read method thereof
10/19/2011EP1476891B1 Device and method of coating a substrate with magnetic or magnetisable material
10/19/2011CN102224610A Method for cleaning magnetic film processing chamber, method for manufacturing magnetic element, and substrate processing apparatus
10/19/2011CN101794658B Method for improving bias field stability in multilayer film structure of FeNi/AlOx/NiFe/FeMn spin valve structure
10/18/2011US8040128 Scanning susceptometer
10/12/2011EP2375465A1 Magnetoresistance effect element and magnetic memory cell and magnetic random access memory using same
10/12/2011EP2375464A1 Magnetoresistive element and memory device using same
10/11/2011US8036025 Magnetoresistive element
10/11/2011US8034637 Techniques for coupling in semiconductor devices
10/06/2011WO2011123357A1 Magnetic tunnel junction storage element and method of fabricating the same
10/06/2011WO2011122411A1 Sputtering device
10/06/2011WO2011122078A1 Magnetoresistive element, magnetic disc device, and magnetoresistive memory device
10/06/2011WO2011121777A1 Magnetoresistive element and magnetic memory
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