Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
12/2014
12/16/2014US8913350 Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
12/16/2014US8913349 CPP-type magnetoresistance effect element and magnetic disk device using side shield layers
12/16/2014US8912792 Systems and methods for rotor angle measurement in an electrical generator
12/16/2014US8912614 Magnetic tunnel junction devices having magnetic layers formed on composite, obliquely deposited seed layers
12/16/2014US8912013 Magnetic tunnel junction device and fabrication
12/16/2014US8912012 Magnetic tunnel junction device and fabrication
12/11/2014US20140365688 Electronic device and method for fabricating the same
12/11/2014US20140363902 Magnetic materials with enhanced perpendicular anisotropy energy density for stt-ram
12/11/2014US20140362624 Spin torque diode element, rectifier and power generation module
12/11/2014US20140361391 Magnetic tunnel junction device with perpendicular magnetization and method of fabricating the same
12/11/2014US20140361390 Magnetic materials with enhanced perpendicular anisotropy energy density for stt-ram
12/11/2014US20140361389 Free layers with iron interfacial layer and oxide cap for high perpendicular anisotropy energy density
12/10/2014CN104204835A 磁性传感器装置 The magnetic sensor device
12/10/2014CN103346254B 一种多层磁电复合材料的制备方法 Method for preparing a multilayer composite magnetic
12/09/2014US8908429 Non-volatile memory with stray magnetic field compensation
12/09/2014US8908428 Voltage assisted STT-MRAM writing scheme
12/09/2014US8908423 Magnetoresistive effect element, and magnetic random access memory
12/09/2014US8907436 Magnetic devices having perpendicular magnetic tunnel junction
12/09/2014US8907435 Semiconductor memory and manufacturing method thereof
12/09/2014US8907390 Magnetic tunnel junction structure
12/09/2014US8907340 Semiconductor arrangement with an integrated hall sensor
12/09/2014US8906208 Sputtering apparatus, sputtering method, and electronic device manufacturing method
12/04/2014US20140356979 Thermally assisted mram with a multilayer encapsulant for low thermal conductivity
12/04/2014US20140355337 Method of pinning domain walls in a nanowire magnetic memory device
12/04/2014US20140355328 Ferroelectric memory cell for an integrated circuit
12/04/2014US20140354276 Integrated hall effect sensor
12/04/2014US20140353785 Low-consumption, amr-type, integrated magnetoresistor
12/04/2014US20140353784 Magnetic memory device
12/04/2014US20140353783 Magnetic memory devices
12/04/2014US20140353782 Thermally assisted mram with a multilayer encapsulant for low thermal conductivity
12/04/2014US20140353781 Memory Devices Comprising Magnetic Tracks Individually Comprising A Plurality Of Magnetic Domains Having Domain Walls And Methods Of Forming A Memory Device Comprising Magnetic Tracks Individually Comprising A Plurality Of Magnetic Domains Having Domain Walls
12/04/2014US20140353662 High Density Nonvolatile Memory
12/02/2014US8902780 Forwarding detection for point-to-multipoint label switched paths
12/02/2014US8902644 Semiconductor storage device and its manufacturing method
12/02/2014US8902634 Resistance change type memory and manufacturing method thereof
12/02/2014US8901687 Magnetic device with a substrate, a sensing block and a repair layer
12/02/2014US8901685 Magnetic materials having superparamagnetic particles
12/02/2014US8901531 Magnetic memory device with varying direction of magnetization and method of manufacturing the same
11/2014
11/27/2014US20140349416 Method for manufacturing a magnetic tunnel junction
11/27/2014US20140349415 Perpendicular mtj stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
11/27/2014US20140349414 Method to reduce magnetic film stress for better yield
11/27/2014US20140349413 Semiconductor devices and methods of manufacturing the same
11/27/2014US20140346626 Memory element and memory apparatus
11/27/2014US20140346625 Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same
11/27/2014US20140346624 Semiconductor device and method of manufacturing the same
11/27/2014US20140346579 Magnetic field sensor device
11/27/2014US20140346518 Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film
11/25/2014US8897061 MTJ cell for an MRAM device and a manufacturing method thereof
11/25/2014US8897060 Magnetoresistance effect element and magnetic memory
11/25/2014US8896972 Magnetic read head with a read function feature
11/25/2014US8896303 Low offset vertical Hall device and current spinning method
11/25/2014US8896070 Patterning embedded control lines for vertically stacked semiconductor elements
11/25/2014US8896040 Magneto-resistive random access memory (MRAM) having a plurality of concentrically aligned magnetic tunnel junction layers and concentrically aligned upper electrodes over a lower electrode
11/25/2014US8895323 Method of forming a magnetoresistive random-access memory device
11/25/2014US8895162 Magnetoresistive element and magnetic memory
11/25/2014US8895161 Ferromagnetic graphenes and spin valve devices including the same
11/20/2014US20140340961 Tunnel magnetoresistive effect element and random access memory using same
11/20/2014US20140340952 Apparatuses having a ferroelectric field-effect transistor memory array and related method
11/20/2014US20140340183 Thin film magnetic element
11/20/2014US20140339661 Method to make mram using oxygen ion implantation
11/20/2014US20140339660 Magnetoresistive element and memory device including the same
11/20/2014US20140339504 Magnetic memory device and method of manufacturing the same
11/18/2014US8891292 Magnetoresistive layer structure with voltage-induced switching and logic cell application
11/18/2014US8891290 Method and system for providing inverted dual magnetic tunneling junction elements
11/18/2014US8891208 CPP-type magnetoresistive element including a rear bias structure and lower shields with inclined magnetizations
11/18/2014US8890569 Method and system for providing a nonvolatile logic array
11/18/2014US8890267 Method and system for providing magnetic junctions having a graded magnetic free layer
11/18/2014US8890266 Fabrication process and layout for magnetic sensor arrays
11/18/2014US8889433 Spin hall effect assisted spin transfer torque magnetic random access memory
11/18/2014US8889431 Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same
11/13/2014US20140332916 Memory element and memory device
11/13/2014US20140332914 Magnatoresistive Structure and Method for Forming the Same
11/13/2014US20140332870 Spin transistor, and semiconductor device, memory device, microprocessor, processor, system, data storage system and memory system including the spin transistor
11/13/2014US20140332749 Semiconductor device and method of manufacturing same
11/11/2014US8885397 Self-referenced MRAM cell with optimized reliability
11/11/2014US8885396 Memory device and method for manufacturing the same
11/11/2014US8884389 Magnetoresistive element and method of manufacturing the same
11/11/2014US8884388 Magnetic memory element, magnetic memory and manufacturing method of magnetic memory
11/11/2014US8884387 Pillar-based interconnects for magnetoresistive random access memory
11/11/2014US8883017 Method and system for providing a read transducer having seamless interfaces
11/06/2014US20140329337 Perpendicular spin transfer torque memory (sttm) device having offset cells and method to form same
11/06/2014US20140328119 Storage element and memory
11/06/2014US20140328116 Magnetic memory devices
11/06/2014US20140327436 Power Module with Integrated Current Sensor
11/06/2014US20140327097 Storage element and storage device
11/06/2014US20140327096 Perpendicular stt-mram having logical magnetic shielding
11/06/2014US20140327095 Magnetic device
11/06/2014US20140327094 Semiconductor structure for electromagnetic induction sensing and a method of manufacturing the same
11/04/2014US8879315 Storage element and storage device
11/04/2014US8878524 Method for determining a distance and an integrated magnetic field measuring device
11/04/2014US8878324 Magnetoresistive element and magnetic memory
11/04/2014US8878323 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
11/04/2014US8878322 Perovskite manganese oxide thin film and manufacturing method therefor
11/04/2014US8878321 Magnetoresistive element and producing method thereof
11/04/2014US8878320 Semiconductor memory device
11/04/2014US8878319 Magnetic tunnel junction device and method for fabricating the same
11/04/2014US8878318 Structure and method for a MRAM device with an oxygen absorbing cap layer
11/04/2014US8878317 Magnetoresistive element and magnetic memory
11/04/2014US8877522 Method of manufacturing a magnetoresistive-based device with via integration
11/04/2014US8877358 Method and system for providing a laser cavity for an energy assisted magnetic recording head
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