Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
06/2014
06/04/2014CN203630326U 垂直霍尔效应器件以及垂直霍尔效应传感器 A vertical Hall-effect device and a vertical Hall effect sensor
06/04/2014CN102414570B Ultra-sensitive magnetoimpedance sensor
06/04/2014CN102299257B Method for preparing zinc-oxide-doped-iron room-temperature magnetic semiconductor
06/03/2014US8742518 Magnetic tunnel junction with free layer having exchange coupled magnetic elements
05/2014
05/30/2014WO2014080823A1 Magnetoresistive effect element manufacturing method and device manufacturing method
05/30/2014WO2014080782A1 Method for manufacturing magnetoresistive effect element
05/30/2014WO2014080634A1 Magnetoresistance effect element
05/29/2014US20140147941 Mram device and integration techniques compatible with logic integration
05/29/2014US20140145279 Magnetoresistive element and magnetic memory
05/29/2014US20140145278 Electrostatic Control of Magnetic Devices
05/29/2014US20140144764 Optically Transmissive Key Assemblies for Display-Capable Keyboards, Keypads, or Other User Input Devices
05/28/2014CN203617345U 各向异性磁阻传感器垂直结构 Anisotropic magnetoresistive sensor vertical structure
05/28/2014CN103824936A 磁感应器的形成方法 The method of forming the magnetic sensor
05/28/2014CN103824935A 一种Ni-Mn基铁磁形状记忆合金/压电体复合材料及电场调控自旋翻转的应用 One kind of Ni-Mn-based ferromagnetic shape memory alloy / piezoelectric composite and the application of an electric field regulation spins flipped
05/28/2014CN102376872B 基于霍尔效应的mos晶体管 Hall Effect-Based mos transistors
05/28/2014CN101325211B 磁传感器及其制造方法 Magnetic sensor and manufacturing method
05/27/2014US8737197 Sequential heartbeat packet arrangement and methods thereof
05/27/2014US8736004 Magnetic tunnel junction for MRAM applications
05/22/2014WO2014078025A1 High speed precessionally switched magnetic logic
05/22/2014US20140141533 Method of fabricating a magnetoresistive random access structure
05/22/2014US20140141532 Plasma processing method and plasma processing apparatus
05/22/2014US20140141530 Magnetic domain wall shift register memory device readout
05/22/2014US20140138783 MR Device with Synthetic Free Layer Structure
05/22/2014US20140138782 Magnetic sensing apparatus and manufacturing method thereof
05/22/2014US20140138610 Magnetic domain wall shift register memory device readout
05/22/2014US20140138347 Method for manufacturing magnetoresistance effect element
05/22/2014US20140138346 Process integration of a single chip three axis magnetic field sensor
05/22/2014DE102013006377B3 Effizienter passiver breitbandiger Gyrator Efficient broadband passive gyrator
05/21/2014EP2732449A1 Mram sensing with magnetically annealed reference cell
05/21/2014CN103811513A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/15/2014WO2014073388A1 Ceramic material and sputtering-target member
05/15/2014WO2014073387A1 Ceramic material and sputtering-target member
05/15/2014US20140133221 Magnectic Structure
05/15/2014US20140131824 Magnetoresistive element
05/15/2014US20140131823 Magnetoresistive element and magnetic memory using the same
05/15/2014US20140131822 Nonvolatile magnetic memory device
05/15/2014US20140131780 Spin torque transfer memory cell structures and methods
05/15/2014US20140131649 Magnetoresistance element and magnetic memory
05/15/2014US20140131308 Pattern fortification for hdd bit patterned media pattern transfer
05/15/2014DE102004054317B4 Strommessvorrichtung A current measuring device
05/14/2014CN103794717A 一种包含介电层的嵌入型磁隧道结器件的制造方法 A method of producing a dielectric layer comprising a magnetic tunnel junction device embedded in
05/14/2014CN103794716A 磁存储器件及其制造方法 The method of manufacturing a magnetic memory device and
05/14/2014CN103794715A 一种基于电压控制的磁存储器 A magnetic memory voltage control based
05/14/2014CN103794224A 一种基于相变磁性材料的非易失性逻辑器件及逻辑操作方法 A non-volatile logic device and the logical operation method of a magnetic material based on a phase change
05/08/2014US20140127832 Forming method of an annular storage unit of a magneto-resistive memory
05/08/2014US20140127831 Magnetoresistive random access memory
05/08/2014US20140127830 Magnetoresistive random access memory
05/08/2014US20140126284 Mram sensing with magnetically annealed reference cell
05/08/2014US20140124884 Semiconductor storage device
05/08/2014US20140124883 Semiconductor storage device and method of manufacturing the same
05/08/2014US20140124882 Systems and methods for implementing magnetoelectric junctions having improved read-write characteristics
05/08/2014US20140124881 Semiconductor devices and methods of fabricating the same
05/08/2014US20140124880 Magnetoresistive random access memory
05/08/2014US20140124729 3-dimensional (3d) non-volatile memory device and method of fabricating the same
05/07/2014EP2728369A1 Hall electromotive force signal detection circuit and current sensor thereof
05/07/2014CN103779495A 基于自旋霍尔效应的磁性元件、微波振荡器及其制法 Based on the spin Hall effect magnetic components, microwave oscillator Jiqizhifa
05/07/2014CN101452991B 具有热辅助写入的磁元件 With a heat-assisted magnetic write element
05/01/2014WO2014065049A1 Magnetic-domain-wall-displacement memory cell and initializing method therefor
05/01/2014WO2014063938A1 Self-referenced mram element and device having improved magnetic field
05/01/2014US20140120635 Etching method and substrate processing apparatus
05/01/2014US20140120634 Method of manufacturing touch sensing panel
05/01/2014US20140119111 Magnetic memory including magnetic nanowire and write method therein
05/01/2014US20140119109 Magnetoresistive element, magnetic memory, and method of manufacturing magnetoresistive element
05/01/2014US20140119106 Magnetic memory devices and methods of operating the same
05/01/2014US20140117983 Hall sensor semiconductor component and method for operating the hall sensor semiconductor component
05/01/2014US20140117478 Semiconductor memory device and method for manufacturing the same
05/01/2014US20140117477 Magnetic memory devices and methods of fabricating the same
05/01/2014US20140117476 Balancing energy barrier between states in perpendicular magnetic tunnel junctions
05/01/2014US20140117427 Stacked structure, spin transistor, and reconfigurable logic circuit
04/2014
04/30/2014CN103765182A Device for determining a torque and associated measuring method
04/30/2014CN103762307A Method for preparing layered electromagnetic thin film material swelling sample
04/30/2014CN103762306A Magnetoelectric composite material and preparation method thereof
04/30/2014CN103761977A Magnetic sensing device including a sense enhancing layer
04/30/2014CN102487118B Magnetic biosensor and preparation method thereof
04/30/2014CN102077315B System and method to fabricate magnetic random access memory
04/29/2014US8710602 Method and system for providing magnetic junctions having improved characteristics
04/29/2014US8709617 Magnetic memory element, driving method for same, and nonvolatile storage device
04/24/2014US20140111283 Spin torque oscillator having multiple fixed ferromagnetic layers or multiple free ferromagnetic layers
04/24/2014US20140110804 Magnetoresistive device and method for forming the same
04/24/2014US20140110803 Method and system for providing magnetic tunneling junction elements having an easy cone anisotropy
04/23/2014EP2722902A1 Self-referenced MRAM element and device having improved magnetic field
04/23/2014CN103746072A Preparing method of imaging giant magnetoresistance composite material film
04/23/2014CN102449755B Semiconductor device
04/22/2014US8704320 Strain induced reduction of switching current in spin-transfer torque switching devices
04/17/2014WO2014059083A2 Improved seed layer for multilayer magnetic materials
04/17/2014WO2014057734A1 Method for forming wiring
04/17/2014WO2014028598A3 Method of manufacturing a magnetoresistive-based device
04/17/2014US20140103475 Semiconductor device and manufacturing method of the semiconductor device
04/17/2014US20140103474 Tunneling magnetoresistance sensor
04/17/2014US20140103473 Increased magnetoresistance in an inverted orthogonal spin transfer layer stack
04/17/2014US20140102501 Thermoelectric conversion apparatus
04/17/2014DE102013111113A1 Ausgangstreiber mit verbesserter elektromagnetischer Verträglichkeit (EMC) und zugehörige Verfahren Output driver with improved electromagnetic compatibility (EMC) and related methods
04/16/2014CN103730570A Magnetic sensor forming method
04/16/2014CN103730569A Longitudinal driving type magnetic impedance element
04/16/2014CN103730351A Post-etching ashing method and forming method of magnetic sensor
04/16/2014CN102280574B Thin film magnetoresistance sensing element, combination of multiple sensing elements, and electronic device coupled with combination
04/15/2014US8698261 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
04/10/2014US20140099735 Structure and Method to Fabricate High Performance MTJ Devices for Spin-Transfer Torque (STT)-RAM Application
04/10/2014US20140097725 Efficient cooling of piezoelectric transducers
04/10/2014US20140097509 Magnetic memory element and magnetic memory
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