Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
04/2014
04/10/2014US20140097477 Magnetic random access memory and a method of fabricating the same
04/10/2014US20140097474 Spin mosfet and reconfigurable logic circuit
04/10/2014DE10354444B4 Vorrichtung mit magnetischer Impedanz, die gleiche verwendende Sensorvorrichtung und Verfahren zum Herstellen der Gleichen Device with magnetic impedance sensor used the same apparatus and method for manufacturing the same
04/09/2014EP2716212A1 Device for tracking masticatory movements
04/09/2014CN203536475U Magnetic sensor and magnetic sensor device
04/09/2014CN103718245A MRAM sensing with magnetically annealed reference cell
04/09/2014CN103715351A Methods of forming magnetic materials and articles formed thereby
04/09/2014CN102610744B Data storage device and manufacturing method thereof
04/08/2014US8692343 MR enhancing layer (MREL) for spintronic devices
04/08/2014US8692342 Magnetic memory devices having a uniform perpendicular nonmagnetic metal rich anisotropy enhanced pattern
04/03/2014WO2014051943A1 Perpendicular mtj stacks including magnetic anisotropy enhancing layer and crystallization barrier layer
04/03/2014WO2014050380A1 Storage element, storage device, and magnetic head
04/03/2014WO2014050379A1 Storage element, storage device, and magnetic head
04/03/2014WO2014049935A1 Storage element, storage apparatus, and magnetic head
04/03/2014US20140093983 Method for fabricating a damascene self-aligned ferrorelectric random access memory (f-ram) having a ferroelectric capacitor aligned with a three dimensional transistor structure
04/03/2014US20140091430 Semiconductor device including operative capacitors and dummy capacitors
04/03/2014DE102007024436B4 Halbleitervorrichtung mit einem Erfassungs-Hall-Element zum Erfassen eines Magnetfelds sowie Magnetsensor A semiconductor device having a detecting Hall element for detecting a magnetic field and magnetic sensor
04/02/2014CN203521478U Ferroelectric/ferromagnetic superlattice structure and memory thereof
04/02/2014CN203521477U Electronic device comprising Hall Effect region with three contact parts
04/02/2014CN102356328B Magnetic detection device
04/01/2014US8686520 Spin-torque magnetoresistive structures
03/2014
03/27/2014US20140087485 Semiconductor device manufacturing method
03/27/2014US20140087483 Manufacturing method of magnetoresistive effect element and manufacturing apparatus of magnetoresistive effect element
03/27/2014US20140085971 Magnetoresistive effect element
03/27/2014US20140084913 Low-noise magnetic sensors
03/27/2014US20140084403 Integrated circuit including sensor having injection molded magnetic material
03/27/2014US20140084402 Magnetic memory
03/27/2014US20140084401 Magnetoresistive element and magnetic memory
03/27/2014US20140084400 Methods and apparatus for magnetic sensor having non-conductive die paddle
03/27/2014US20140084398 Perpendicular mtj stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
03/27/2014DE102013109012A1 Verfahren und System zum Bereitstellen eines magnetischen Tunnelkontakts, wobei auf Spin-Bahn-Kopplung basierendes Schalten verwendet wird, und Speicher, die den magnetischen Tunnelkontakt verwenden Method and system for providing a magnetic tunnel junction, wherein based switching is used to spin-orbit coupling, and memories using the magnetic tunnel junction
03/26/2014CN103682087A Method for effectively enhancing vertical coercivity of magnetic multilayer film
03/26/2014CN103682086A Preparation method of layered electromagnetic thin film function material bump sample
03/26/2014CN103682085A Magnetic random access memory and manufacturing method thereof
03/26/2014CN103682084A Magnetic memory device and method of forming same
03/26/2014CN101933172B Magnetoresistive effect device, magnetic head, and information storage apparatus
03/25/2014US8679653 Spin-valve recording element and storage device
03/20/2014WO2014043466A1 Improved storage element for stt mram applications
03/20/2014US20140080228 Semiconductor device and method of manufacturing the semiconductor device
03/20/2014US20140080227 Method of Manufacturing Semiconductor Device
03/20/2014US20140077319 Magnetoresistive effect element and manufacturing method thereof
03/19/2014EP2707876A1 Co/Ni MULTILAYERS WITH IMPROVED OUT-OF-PLANE ANISOTROPY FOR MAGNETIC DEVICE APPLICATIONS
03/19/2014CN103647022A Anisotropic magneto resistive sensor vertical structure and manufacturing method thereof
03/19/2014CN102280575B Method for manufacturing ring structure
03/13/2014WO2014039565A1 Low cost programmable multi-state device
03/13/2014WO2014038015A1 Spin wave switch and fpga using same
03/13/2014US20140073064 Magnetic tunnel junction (mtj) on planarized electrode
03/13/2014US20140072829 Thin film structure including ordered alloy and method for manufacturing the thin film structure
03/13/2014US20140071742 Semiconductor memory device and method of operating the same
03/13/2014US20140070795 Hall Effect Device
03/13/2014US20140070343 Magnetoresistive effect element
03/13/2014US20140070342 Methods of forming memory cells and arrays of magnetic memory cell structures, and related memory cells and memory cell structures
03/13/2014US20140070290 Ferroelectric memory and manufacturing method of the same
03/13/2014US20140070289 Ferroelectric memory and manufacturing method thereof
03/13/2014DE102013218109A1 Hall-effekt-vorrichtung Hall-effect device
03/12/2014CN203481806U Magnetic resistance current limiter
03/12/2014CN103633240A Magnetic devices having perpendicular magnetic tunnel junction
03/12/2014CN103633239A Megnetic memory and providing method and programming method
03/12/2014CN102610743B Composite material manufacturing method capable of controllably increasing low-field magnetoresistance
03/12/2014CN102446541B Magnetic random access memory and manufacturing method thereof
03/12/2014CN101815806B Film forming apparatus and film forming method
03/06/2014WO2014036510A1 Non-volatile spin switch
03/06/2014WO2014036101A1 Metal protection layer over sin encapsulation for spin-torque mram device applications
03/06/2014WO2014034639A1 Magnetic multilayer film and tunneling magnetoresistance element
03/06/2014US20140063921 Method and system for providing inverted dual magnetic tunneling junction elements
03/06/2014US20140063891 Semiconductor memory device
03/06/2014US20140062646 Magnetic core for use in an integrated circuit, an integrated circuit including such a magnetic core, a transformer and an inductor fabricated as part of an integrated circuit
03/06/2014US20140062530 Switching mechanism of magnetic storage cell and logic unit using current induced domain wall motions
03/06/2014US20140061828 Magnetic memory devices
02/2014
02/27/2014WO2013170070A3 Spin transistors employing a piezoelectric layer and related memory, memory systems, and methods of manufacturing thereof
02/27/2014US20140056061 Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions
02/27/2014US20140054733 Single-chip referenced full-bridge magnetic field sensor
02/26/2014CN103605088A 90-degree self-biased spin valve sensing unit
02/25/2014US8659102 Nonvolatile magnetic memory device
02/20/2014US20140050019 Multi-level memory cell using multiple magnetic tunnel junctions with varying mgo thickness
02/20/2014US20140048896 Magnetic Tunnel Junction Device And Method Of Making Same
02/20/2014US20140048895 Magnetic Tunnel Junction Device
02/20/2014US20140048894 Mtp mtj device
02/20/2014US20140048893 Magnetoresistive random access memory cell and fabricating the same
02/19/2014EP2698455A1 Perovskite-type manganese oxide thin film
02/19/2014EP2697618A1 Device for determining a torque and associated measuring method
02/19/2014CN103594618A Magnetoresistive random access memory cell and fabricating the same
02/19/2014CN103594424A Magnetic tunnel junction cell including multiple vertical magnetic domains
02/18/2014US8652347 Magnetically-and electrically-induced variable resistance materials and method for preparing same
02/13/2014WO2014025914A1 Magnetoresistance sensor with perpendicular anisotropy
02/13/2014WO2014024358A1 Tunnel magnetoresistive element manufacturing apparatus
02/13/2014WO2014024012A1 Seebeck rectification enabled by intrinsic thermoelectric coupling in magnetic tunneling junctions
02/13/2014US20140043924 Configurable memory array
02/13/2014US20140043895 Device consisting of various thin films and use of such a device
02/13/2014US20140042574 Tunable and metastable ferroelectric materials and magneto-electric devices
02/13/2014US20140042573 Memory element and memory device
02/13/2014US20140042572 Spin filter and driving method thereof
02/13/2014US20140042571 Magnetic random access memory having perpendicular enhancement layer
02/13/2014US20140042570 Storage element and memory
02/13/2014US20140042569 Magnetic Enhancement Layer in Memory Cell
02/13/2014US20140042568 Nonvolatile semiconductor memory device
02/13/2014US20140042567 Mtj mram with stud patterning
02/13/2014DE10331096B4 Integrierte Halbleiteranordnung und Verfahren Integrated semiconductor device and method
02/13/2014DE102013208780A1 Rechnervorrichtungen basierend auf mehreren Magneten und Verfahren zur Lösung von Optimierungsproblemen Computing devices based on a plurality of magnets and method for solving optimization problems
02/12/2014EP2695211A1 Confined magnetic memory cell structures and methods of forming the same
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