Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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03/07/2013 | WO2013029512A1 Mtj three-axis magnetic field sensor and encapsulation method thereof |
03/06/2013 | CN1815623B Magnetoresistance random access memory array |
03/06/2013 | CN102956816A Hole first hardmask definition |
03/06/2013 | CN102956815A Magnetoresistive random access memory (mram) device and fabrication methods thereof |
03/06/2013 | CN102956814A Lanthanum strontium copper manganese sulfur oxygen diluted magnetic semiconductor material and preparation method thereof |
03/06/2013 | CN102956813A Magnetic tunneling junction device, memory, storage system and electronic device |
03/06/2013 | CN102263121B Manufacturing method of grapheme-based Hall IC (integrated circuit) |
03/06/2013 | CN101821424B High-frequency sputtering device |
02/28/2013 | WO2013027406A1 Magnetoresistive effect element manufacturing method and magnetoresistive effect film working method |
02/28/2013 | US20130049749 Semiconductor Fluxgate Magnetometer |
02/28/2013 | DE19848776B4 Austauschkopplungsschicht, diese Austauschkopplungsschicht verwendendes Element vom Magnetowiderstandseffekt-Typ und das Element vom Magnetowiderstandseffekt-Typ verwendender Dünnschicht-Magnetkopf Exchange coupling layer, this layer exchange coupling-use element of the magnetoresistance effect type and the element used Direction magnetoresistance effect type thin-film magnetic head |
02/28/2013 | DE10306306B4 In eine Einstellschaltung eingebetteter Halbleitersensor und Torsionsstab-Drehmomentsensorsystem In a setting of embedded semiconductor sensor and torsion torque sensor system |
02/28/2013 | DE102012108032A1 Halbleiterchippaket und Verfahren Semiconductor chip package and method |
02/28/2013 | DE102004033159B4 Erwärmen von MRAM-Zellen, um ein Umschalten zwischen Zuständen zu erleichtern Heating of MRAM cells in order to facilitate switching between states |
02/27/2013 | CN102945922A Multifunctional spinning memory resistor device capable of combining memory resistor and tunneling magneto-resistor and preparation method |
02/27/2013 | CN101923266B Offset cancelling circuit |
02/21/2013 | WO2013023699A1 Device for determining a torque and associated measuring method |
02/21/2013 | US20130044537 Magnetic memory, method of manufacturing the same, and method of driving the same |
02/20/2013 | CN102938446A Forming method of annular storage unit of magneto-resistive memory |
02/20/2013 | CN102938445A Production method of annular storage unit of magneto-resistive memory |
02/20/2013 | CN102938257A Magnetic tunnel junction, its making method and magnetic tunnel junction-containing storage unit |
02/19/2013 | US8378330 Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same |
02/14/2013 | WO2013020569A1 Magnetoresistive memory with low critical current for magnetization switching |
02/14/2013 | US20130042081 Magnetic tunneling junction devices, memories, memory systems, and electronic devices |
02/14/2013 | US20130038421 Magnetic detector and method for manufacturing the same |
02/14/2013 | US20130037896 Semiconductor device and method for fabricating the same |
02/14/2013 | US20130037892 Semicondcutor device and method for fabricating the same |
02/14/2013 | DE102012105595A1 Magnetic tunnel junction device of memory device, has an upper structure having magnetic layer, and a lower structure having extrinsic vertical magnetization structures formed on magnetic layer and perpendicular magnetization layer |
02/13/2013 | EP2557430A1 Magnetic sensor and method for fabricating the same |
02/13/2013 | CN102931342A Hall spinning scale material and component |
02/13/2013 | CN102931341A Magnetic tunnel junction spin battery with spin electromotive force and giant magnetoresistance (GMR) and preparation method thereof |
02/13/2013 | CN101483176B Magnetic memory device |
02/07/2013 | US20130034917 Method for fabricating magnetic tunnel junction device |
02/07/2013 | US20130033927 Magentic resistance memory apparatus having multi levels and method of driving the same |
02/07/2013 | US20130032911 Magnetic memory device and fabrication method thereof |
02/07/2013 | US20130032909 Hall effect element having a wide cross shape with dimensions selected to result in improved performance characteristics |
02/07/2013 | US20130032907 MRAM with sidewall protection and method of fabrication |
02/06/2013 | EP2553742A1 Magnetic tunnel junction storage element and method of fabricating the same |
02/06/2013 | EP2553728A1 Damascene -type magnetic tunnel junction structure comprising horizontal and vertical portions and method of forming the same |
02/06/2013 | CN102918649A Magnetic random access memory device and method for producing a magnetic random access memory device |
02/06/2013 | CN102916127A High-performance magnetic impedance composite material |
02/06/2013 | CN102916126A Storage element and storage device |
02/06/2013 | CN102916125A Magnetic memory device and fabrication method thereof |
02/06/2013 | CN102916124A Magnetic memory device and method of manufacturing the same |
02/06/2013 | CN102916123A Magentic resistance memory apparatus having multi levels and method of driving the same |
02/06/2013 | CN102916122A Low-leakage-current semiconductor film heterojunction and preparation method thereof |
02/06/2013 | CN102916007A 3-D (three-dimension) Hall sensor and manufacturing method thereof |
02/05/2013 | US8368133 Memory constructions comprising magnetic materials |
01/31/2013 | WO2013015004A1 Magnetoresistive element |
01/31/2013 | US20130026585 MRAM Device and Fabrication Method Thereof |
01/30/2013 | CN102903843A Hall chip location device |
01/30/2013 | CN101868561B Sputtering apparatus, and filming method |
01/29/2013 | US8362580 Spin-transfer switching magnetic element utilizing a composite free layer comprising a superparamagnetic layer |
01/24/2013 | DE112011100605T5 Integriertes hall-effekt-element mit germanium-hall-platte Integrated hall-effect-element with germanium-hall-plate |
01/24/2013 | DE102012212606A1 Vertikaler hall-sensor mit hoher elektrischer symmetrie Vertical hall-sensor with high electrical symmetry |
01/23/2013 | CN102891251A Encapsulation structure and encapsulation method for graphene hall element |
01/23/2013 | CN102208530B Single-chip magnetic sensor, and laser heating-assisted annealing apparatus thereof and laser heating-assisted annealing method thereof |
01/23/2013 | CN101853918B Single-electron magnetic resistance structure and application thereof |
01/17/2013 | WO2013009917A1 Mram sensing with magnetically annealed reference cell |
01/17/2013 | US20130017627 Embedded Magnetic Random Access Memory (MRAM) |
01/17/2013 | US20130016551 Magnetic random access memory cell with improved dispersion of the switching field |
01/17/2013 | US20130015850 Die-Sized Atomic Magnetometer and Method of Forming the Magnetometer |
01/17/2013 | US20130015540 Magnetic tunnel junction device and method for fabricating the same |
01/17/2013 | DE112011101184T5 Magnetische Direktzugriffsspeichereinheit und Verfahren zum Herstellen einer magnetischen Direktzugriffsspeichereinheit The magnetic random access memory unit and method of manufacturing a magnetic random access memory unit |
01/17/2013 | DE102011107767A1 Hallsensor Hall sensor |
01/17/2013 | DE102011107711A1 Magnetfeldsensor und Verfahren zur Bestimmung der Offsetspannung eines Magnetfeldsensors Magnetic field sensor and method for determining the offset voltage of a magnetic field sensor |
01/16/2013 | EP2546611A1 Magnetic sensor and magnetic encoder |
01/16/2013 | CN102881821A Semiconductor storage device and manufacturing method thereof |
01/16/2013 | CN102881820A Magnetoresistive random access memory and method of making the same |
01/16/2013 | CN102881819A Magnetic memory device having increased margin in thickness of magnetic layers |
01/16/2013 | CN102881818A Hall effect sensor |
01/16/2013 | CN102881817A Magnetic field sensor and method for determining the offset voltage of a magnetic field sensor |
01/10/2013 | WO2013005461A1 Magnetoresistive element, magnetic memory, and method of manufacturing magnetoresistive element |
01/09/2013 | CN102867910A Method of manufacturing magnetoresistive device and apparatus for manufacturing the same |
01/09/2013 | CN102867909A Magnetoresistance element and magnetic sensor using the same |
01/09/2013 | CN102867538A Method and system for providing a magnetic junction using half metallic ferromagnets |
01/08/2013 | US8351253 Thin film magnetic memory device capable of conducting stable data read and write operations |
01/08/2013 | US8350649 Electronic plunger switch |
01/03/2013 | US20130005053 Magnetic Spin Shift Register Memory |
01/03/2013 | US20130005052 Magnetic tunnel junction with iron dusting layer between free layer and tunnel barrier |
01/03/2013 | US20130005051 Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory |
01/03/2013 | US20130001716 Magnetoresistive element and manufacturing method of the same |
01/03/2013 | US20130001715 Magnetoresistive element and manufacturing method of the same |
01/02/2013 | CN102856490A Method to protect magnetic bits during planarization |
01/02/2013 | CN102856489A Magnetoresistive element and magnetic memory |
01/02/2013 | CN102856488A Logic device based on reversible electroresistance effects |
12/27/2012 | WO2012176747A1 Method for producing functional element |
12/27/2012 | WO2012176064A1 Highly sensitive magnetic tunable heterojunction device for resistive switching |
12/27/2012 | US20120329177 Spin-torque magnetoresistive structures with bilayer free layer |
12/27/2012 | US20120326254 Magnetic random access memory |
12/27/2012 | US20120326253 Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories |
12/27/2012 | DE102012210378A1 XMR - Winkelsensoren XMR - angle sensors |
12/27/2012 | DE102011088140A1 Elastic magnetic sensor element for measuring and detecting magnetic objects in liquids such as paste in pipeline, has resilient substrate which is made of magnetic material with magnet impedance effect |
12/26/2012 | CN102024904B Film material for high-sensitivity metal Hall sensor and preparation method of film material |
12/26/2012 | CN101689600B Magnetoresistive element and magnetic random access memory |
12/26/2012 | CN101203769B Three-axis magnetic sensor and manufacturing method thereof |
12/20/2012 | WO2012173279A1 Nonvolatile magnetic element and nonvolatile magnetic device |
12/20/2012 | WO2012172946A1 Electric current sensor |
12/20/2012 | US20120319682 Integrated circuit including sensor having injection molded magnetic material |
12/20/2012 | US20120319221 Method and system for providing a magnetic junction configured for precessional switching using a bias structure |