| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 09/13/2001 | US20010021572 Method for producing a semiconductor device |
| 09/13/2001 | US20010021569 Method and apparatus for manufacturing semiconductor device |
| 09/13/2001 | US20010021478 Multilayer |
| 09/13/2001 | US20010021464 Electron injection and transport ability |
| 09/13/2001 | US20010021067 Optical writing device and image forming apparatus and method using the same |
| 09/13/2001 | US20010020705 Semiconductor light emitting device and display device using the same |
| 09/13/2001 | US20010020703 Algainp light emitting devices with thin active layers |
| 09/13/2001 | US20010020699 Semiconductor light-emitting device and manufacturing method therefor |
| 09/13/2001 | US20010020670 Automatic power control circuit |
| 09/13/2001 | US20010020440 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device |
| 09/13/2001 | DE10056645A1 Production of tear-free planar Group III-N, Group III-V-N and metal-nitrogen component structures on silicon substrates comprises partially structuring the silicon substrate or buffer layer deposited on it by masking and/or etching |
| 09/13/2001 | DE10010638A1 Making light emitting semiconducting body with luminescence conversion element involves applying suspension with solvent, adhesive, luminescent material |
| 09/13/2001 | DE10008584A1 Halbleiterbauelement für die Emission elektromagnetischer Strahlung und Verfahren zu dessen Herstellung A semiconductor device for the emission of electromagnetic radiation and methods for its preparation |
| 09/13/2001 | DE10008583A1 Production of an optically transparent substrate comprises epitaxially growing a substrate layer on a substrate, connecting the substrate layer to the side with an optically transparent layer, and removing the substrate |
| 09/13/2001 | DE10006738A1 Radiation-emitting semiconductor component used in semiconductor devices has multiple layer structure, and radiation-permeable window |
| 09/13/2001 | CA2401459A1 Lighting apparatus having quantum dot layer |
| 09/13/2001 | CA2398359A1 Quantum well intermixing |
| 09/13/2001 | CA2398301A1 Quantum well intermixing |
| 09/12/2001 | EP1132977A2 Semiconductor light emitting device and method for manufacturing same |
| 09/12/2001 | EP1132976A2 Optoelectronic material and device application, and method for manufacturing optoelectronic material |
| 09/12/2001 | CN1312593A Composite Ag-Sn LED lead frame |
| 09/12/2001 | CN1312583A Preparation of self-organization grown quantum line structure material in molecular beam epitaxy |
| 09/11/2001 | US6289030 Fabrication of semiconductor devices |
| 09/11/2001 | US6288696 Analog driver for led or similar display element |
| 09/11/2001 | US6288497 Matrix structure based LED array for illumination |
| 09/11/2001 | US6288417 Semiconductor of a polycrystalline, amorphous substrate with group 3 nitride wetting layer formed on it, and a polycrystalline group 3 nitride layer formed over the wetting layer; efficient light emission |
| 09/11/2001 | US6288416 Light-emitting semiconductor device using group III nitride compound |
| 09/11/2001 | US6288415 Optoelectronic semiconductor devices |
| 09/11/2001 | US6287947 Method of forming transparent contacts to a p-type GaN layer |
| 09/11/2001 | US6287928 Two-dimensionally arrayed quantum device |
| 09/11/2001 | US6287883 Method for fabricating LED |
| 09/11/2001 | US6287882 Light emitting diode with a metal-coated reflective permanent substrate and the method for manufacturing the same |
| 09/11/2001 | US6287881 Semiconductor device with low parasitic capacitance |
| 09/11/2001 | US6287164 Method and system for manufacturing a molded body |
| 09/07/2001 | WO2001065651A1 Quantum cascade laser and method for making same |
| 09/07/2001 | WO2001065613A1 Methods for producing a light emitting semiconductor body with a luminescence converter element |
| 09/07/2001 | WO2001065592A2 Method and device for producing group iii-n, group iii-v-n and metal-nitrogen component structures on si substrates |
| 09/06/2001 | WO2001065469A1 Scanner utilizing light pipe with diffuser |
| 09/06/2001 | US20010019849 Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity |
| 09/06/2001 | US20010019566 Conductive element with lateral oxidation barrier |
| 09/06/2001 | US20010019371 Method of transferring semiconductors |
| 09/06/2001 | US20010019136 Semiconductor light emitting element and its manufacturing method |
| 09/06/2001 | US20010019134 Light emitting diode with a permanent substrate of transparent glass or quartz and the method for manufacturing the same |
| 09/05/2001 | EP1130724A1 Quantum cascade laser and method of manufacturing the same |
| 09/05/2001 | EP1130660A1 Chip semiconductor light-emitting device |
| 09/05/2001 | EP1130659A1 Method of manufacturing low resistivity p-type compound semiconductor material |
| 09/05/2001 | EP1130647A2 Procedure for the wafer scale integration of gallium arsenide based optoelectronic devices with silicon based integrated circuits |
| 09/05/2001 | EP1130646A1 Chip-mounted enclosure |
| 09/05/2001 | EP1130626A2 Method and apparatus for manufacturing semiconductor device |
| 09/05/2001 | EP1129492A1 Surface-emitting diode radiation source |
| 09/05/2001 | EP1129478A1 Method and apparatus for improving accuracy of plasma etching process |
| 09/05/2001 | CN1311536A Optimum design method for DH-Ga1-XAlx-As LED liquid-phase epitaxial material structure |
| 09/05/2001 | CN1311535A Heterogeneous great crystal luminous diode body crystal grain and its producing method |
| 09/05/2001 | CN1311284A Ultraviolet short wave broad zone luminescent InAlGaN, and its prepn. method, and ultraviolet luminescent means therewith |
| 09/04/2001 | US6285696 Algainn pendeoepitaxy led and laser diode structures for pure blue or green emission |
| 09/04/2001 | US6284559 Gallium nitride group compound semiconductor light-emitting device and method for fabricating the same |
| 09/04/2001 | US6284395 Nitride based semiconductors and devices |
| 08/30/2001 | WO2001063709A2 Semiconductor component for the emission of electromagnetic radiation and method for production thereof |
| 08/30/2001 | WO2001063331A1 Multi-pass, arcuate bent waveguide, high power superluminescent diode |
| 08/30/2001 | WO2001062868A1 Photo-luminescence layer in the optical spectral region and in adjacent spectral regions |
| 08/30/2001 | US20010018227 Process for producing a semiconductor device |
| 08/30/2001 | US20010018226 Process for producing GaN related compound semiconductor |
| 08/30/2001 | US20010017874 Semiconductor light emitting device and method for producing the same |
| 08/30/2001 | US20010017872 Semiconductor laser device having controlled oxygen concentration at boundary between semiconductor layers and reflectance control layer formed on end facet |
| 08/30/2001 | US20010017378 Semiconductor device |
| 08/30/2001 | US20010017369 Electron-emitting device and method of manufacturing the same and display apparatus using the same |
| 08/30/2001 | US20010017257 Method for fabricating ZnO thin film for ultraviolet detection and emission source operated at room temperature, and apparatus therefor |
| 08/30/2001 | US20010017099 Method of manufacturing semiconductor substrate |
| 08/30/2001 | DE10008203A1 Manufacturing electronic semiconducting components involves attaching semiconducting body to conductive substrate, making electrical connections, encapsulating body, dividing substrate |
| 08/30/2001 | CA2404451A1 Multi-pass, arcuate bent waveguide, high power superluminescent diode |
| 08/29/2001 | EP1128714A1 Circuit board assembly |
| 08/29/2001 | EP1128446A2 InAIGaN emitting light in ultraviolet short-wavelenght region and process for preparing the same as well as ultraviolet light-emitting device using the same |
| 08/29/2001 | EP1127098A1 Phosphor powders, methods for making phosphor powders and devices incorporating same |
| 08/29/2001 | EP0861426B1 Infrared optical system |
| 08/29/2001 | CN2445438Y Flash lamp light-emitting diode structure |
| 08/29/2001 | CN1310790A Luminaire with LEDS |
| 08/29/2001 | CN1310307A Making process of lamp strip or lamp string |
| 08/29/2001 | CN1070315C White light electroluminescent device with organic multi quantum sink structure |
| 08/29/2001 | CN1070314C Production of single layer film electroluminescent device |
| 08/29/2001 | CN1070278C A lamp for construction work using a light source having directivity |
| 08/28/2001 | US6281526 A semiconductor of stacks of n-type indium, aluminum, and/or gallium nitrides that has a contact region with a metal layer deposited on it and a group 4 or 5 element diffused to penetrate it; increased carrier concentration |
| 08/28/2001 | US6281524 Semiconductor light-emitting device |
| 08/28/2001 | US6281522 First semiconductive layer of silicon carbide, a buffer layer of aluminum nitride, and a second semiconductor layer of aluminum, gallium, and indium nitride; for laser diodes; electrical and optical properties |
| 08/28/2001 | US6281518 Layered III-V semiconductor structures and light emitting devices including the structures |
| 08/28/2001 | US6281435 Chip-type electronic devices |
| 08/28/2001 | US6281430 Electronic device comprising a columnar discotic phase |
| 08/28/2001 | US6281427 Substrate for producing semiconductor device, method for producing the substrate, photoelectric conversion device and method for producing the photoelectric conversion device |
| 08/28/2001 | US6281032 Manufacturing method for nitride III-V compound semiconductor device using bonding |
| 08/28/2001 | US6280523 Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting |
| 08/23/2001 | WO2001062012A1 System and method employing led light sources for a projection display |
| 08/23/2001 | WO2001061766A1 Light-emitting semiconductor device and method of manufacture thereof |
| 08/23/2001 | WO2001061765A1 Semiconductor component which emits radiation, and method for producing the same |
| 08/23/2001 | WO2001061764A1 Radiation-emitting semiconductor element, method for production thereof and radiation emitting optical component |
| 08/23/2001 | WO2001061748A1 Method for fabricating light emitting diodes |
| 08/23/2001 | US20010016404 GaN substrate including wide low - defect region for use in semiconductor element |
| 08/23/2001 | US20010016366 Method for fabricating semiconductor light emitting element |
| 08/23/2001 | US20010016095 Single photon generating apparatus |
| 08/23/2001 | US20010015480 Lead frame attachment for optoelectronic device |
| 08/23/2001 | US20010015469 Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element |
| 08/23/2001 | US20010015443 Semiconductor light emitting device |