Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2014
10/14/2014US8860081 Semiconductor device
10/14/2014US8860080 Interface protection device with integrated supply clamp and method of forming the same
10/14/2014US8860078 Simplified devices utilizing novel pn-semiconductor structures
10/14/2014US8860072 Light emitting device and light unit having the same
10/14/2014US8860048 Three dimensional light emitting diode systems, and compositions and methods relating thereto
10/14/2014US8860046 Light-emitting diode device
10/14/2014US8860041 Method for producing nanowires using a porous template
10/14/2014US8860040 High voltage power semiconductor devices on SiC
10/14/2014US8860039 Semiconductor device
10/14/2014US8860038 Nitride semiconductor device and manufacturing method for the same
10/14/2014US8860037 Thin-film transistor device
10/14/2014US8860036 Pixel electrode structure and display using the same
10/14/2014US8860034 Organic light-emitting display apparatus
10/14/2014US8860033 Active matrix substrate
10/14/2014US8860032 Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same which improve switching characteristics
10/14/2014US8860031 Non-volatile semiconductor memory device and method of manufacturing the same
10/14/2014US8860030 Thin film transistor and display device including the same
10/14/2014US8860029 Photoelectric converison element, photoelectric conversion circuit, and display device
10/14/2014US8860026 Thin film transistor array and method for manufacturing the same
10/14/2014US8860025 Semiconductor device and method for manufacturing the semiconductor device
10/14/2014US8860023 Semiconductor device
10/14/2014US8860022 Oxide semiconductor film and semiconductor device
10/14/2014US8860021 Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element
10/14/2014US8860019 Light-emitting device comprising light-emitting layer including two layers
10/14/2014US8860018 Anthanthrene based compound and semiconductor device
10/14/2014US8860014 Organic electroluminescent member and method for producing organic electroluminescent element
10/14/2014US8860011 Semiconductor device, and electronic book including double-sided light emitting display panel
10/14/2014US8860009 Device comprising positive hole injection transport layer, method for producing the same and ink for forming positive hole injection transport layer
10/14/2014US8860008 Forming active channel regions using enhanced drop-cast printing
10/14/2014US8860006 Spin transistor having multiferroic gate dielectric
10/14/2014US8860005 Thin light emitting diode and fabrication method
10/14/2014US8860004 State changing device
10/14/2014US8859947 Display device comprising at least dual transistor electrically connected to dual parallel wiring
10/14/2014US8859440 Method of formation of coherent wavy nanostructures (variants)
10/14/2014US8859439 Solution-assisted carbon nanotube placement with graphene electrodes
10/14/2014US8859436 Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon
10/14/2014US8859434 Etching method
10/14/2014US8859431 Process to remove Ni and Pt residues for NiPtSi application using chlorine gas
10/14/2014US8859426 Semiconductor device and manufacturing method thereof
10/14/2014US8859421 Manganese oxide film forming method, semiconductor device manufacturing method and semiconductor device
10/14/2014US8859419 Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device
10/14/2014US8859417 Gate electrode(s) and contact structure(s), and methods of fabrication thereof
10/14/2014US8859411 Method for producing transistor
10/14/2014US8859410 Gate stack of boron semiconductor alloy, polysilicon and high-k gate dielectric for low voltage applications
10/14/2014US8859409 Semiconductor component comprising a dopant region in a semiconductor body and a method for producing a dopant region in a semiconductor body
10/14/2014US8859408 Stabilized metal silicides in silicon-germanium regions of transistor elements
10/14/2014US8859404 Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
10/14/2014US8859403 Systems, methods and materials including crystallization of substrates via sub-melt laser anneal, as well as products produced by such processes
10/14/2014US8859400 Gallium nitride devices with conductive regions
10/14/2014US8859398 Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edge
10/14/2014US8859395 Techniques for curvature control in power transistor devices
10/14/2014US8859392 Manufacturing method of power semiconductor
10/14/2014US8859389 Methods of making fins and fin field effect transistors (FinFETs)
10/14/2014US8859388 Sealed shallow trench isolation region
10/14/2014US8859387 Method for manufacturing silicon carbide semiconductor device
10/14/2014US8859380 Integrated circuits and manufacturing methods thereof
10/14/2014US8859379 Stress enhanced finFET devices
10/14/2014US8859378 Fin field-effect transistor and method for manufacturing the same
10/14/2014US8859377 Damage implantation of a cap layer
10/14/2014US8859376 Transistor with improved sigma-shaped embedded stressor and method of formation
10/14/2014US8859375 High voltage device and manufacturing method thereof
10/14/2014US8859373 High voltage device and manufacturing method thereof
10/14/2014US8859372 Double channel doping in transistor formation
10/14/2014US8859370 Method for forming impurity region of vertical transistor and method for fabricating vertical transistor using the same
10/14/2014US8859369 Semiconductor device and method of manufacturing the same
10/14/2014US8859368 Semiconductor device incorporating a multi-function layer into gate stacks
10/14/2014US8859367 Gate constructions of recessed access devices and methods of forming gate constructions of recessed access devices
10/14/2014US8859366 Methods of fabricating silicon carbide devices having smooth channels
10/14/2014US8859365 Semiconductor device and method for manufacturing same
10/14/2014US8859364 Manufacturing method of non-volatile memory
10/14/2014US8859359 Floating body cell structures, devices including same, and methods for forming same
10/14/2014US8859358 CMOS transistors, fin field-effect transistors and fabrication methods thereof
10/14/2014US8859357 Method for improving device performance using dual stress liner boundary
10/14/2014US8859356 Method of forming metal silicide regions on a semiconductor device
10/14/2014US8859355 Method to make dual material finFET on same substrate
10/14/2014US8859354 Transistors and fabrication method thereof
10/14/2014US8859353 Semiconductor device and fabrication method thereof
10/14/2014US8859352 Lightly-doped drains (LDD) of image sensor transistors using selective epitaxy
10/14/2014US8859350 Recessed gate field effect transistor
10/14/2014US8859349 Multi-level charge storage transistors and associated methods
10/14/2014US8859347 Semiconductor-on-insulator with back side body connection
10/14/2014US8859345 Method for fabrication of III-nitride heterojunction semiconductor device
10/14/2014US8859343 3D semiconductor structure and manufacturing method thereof
10/14/2014US8859337 Thermal matching in semiconductor devices using heat distribution structures
10/14/2014US8859332 Process for producing indium oxide-containing layers
10/14/2014US8859330 Method for manufacturing semiconductor device
10/14/2014US8859329 Memory cells and methods of forming memory cells
10/14/2014US8859328 Multifunctional electrode
10/14/2014US8859317 Gas sensor and manufacturing method thereof
10/14/2014US8859316 Schottky junction si nanowire field-effect bio-sensor/molecule detector
10/14/2014US8859302 Structure and method for adjusting threshold voltage of the array of transistors
10/14/2014US8858844 In—Ga—Zn—O type sputtering target
10/14/2014US8858832 Construction of quantum dots via a regioselective dendritic functionalized cellulose template
10/09/2014WO2014165638A1 Method of forming transistor with metal contacts in barrier layer
10/09/2014WO2014165461A1 Select gate materials having different work functions in 3d nand non-volatile memory
10/09/2014WO2014165149A1 Thin film transistor detection systems and related methods
10/09/2014WO2014165034A1 Enhancement-mode iii-nitride devices
10/09/2014WO2014164710A1 Vertical nand and method of making thereof using sequential stack etching and landing pad
10/09/2014WO2014164520A1 Magnetic random access memory cells with isolating liners
10/09/2014WO2014164507A1 Power field-effect transistor and corresponding package, system and manufacturing methods
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