Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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07/11/2012 | CN102576724A Activation of graphene buffer layers on silicon carbide |
07/11/2012 | CN102576723A Semiconductor device and process for production thereof |
07/11/2012 | CN102576722A EL display panel, EL display apparatus, and method of manufacturing EL display panel |
07/11/2012 | CN102576708A Semiconductor device |
07/11/2012 | CN102576692A Semiconductor-on-insulator with back side heat dissipation |
07/11/2012 | CN102576679A Semiconductor element, hemt element, and production method for semiconductor element |
07/11/2012 | CN102576678A Flexible semiconductor device and manufacturing method therefor |
07/11/2012 | CN102576677A Semiconductor element and method for manufacturing the same |
07/11/2012 | CN102576675A Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device |
07/11/2012 | CN102576659A Combined substrate having silicon carbide substrate |
07/11/2012 | CN102576518A Liquid crystal display device and electronic apparatus having the same |
07/11/2012 | CN102576507A Active matrix substrate, method for manufacturing same, and image display device |
07/11/2012 | CN102576175A Active matrix substrate, liquid crystal panel, and television receiver |
07/11/2012 | CN102576172A Liquid crystal display device, driving method of the same, and electronic appliance including the same |
07/11/2012 | CN102576036A Piezoelectric acceleration sensor |
07/11/2012 | CN102574868A Substituted benzochalcogenoacene compound, thin film comprising the compound, and organic semiconductor device including the thin film |
07/11/2012 | CN102574806A Perylene tetracarboxydiimide derivative |
07/11/2012 | CN102569429A Image sensor |
07/11/2012 | CN102569428A Longitudinal voltage-controlled varactor and preparation method thereof |
07/11/2012 | CN102569427A Voltage control variable capacitor and preparation method thereof |
07/11/2012 | CN102569426A PN junction voltage-controlled varactor and preparation method thereof |
07/11/2012 | CN102569425A Capacitor of nonvolatile memory device |
07/11/2012 | CN102569424A Nitride based semiconductor device |
07/11/2012 | CN102569423A Nitride based semiconductor device and method for manufacturing the same |
07/11/2012 | CN102569422A Schottky rectifying device and manufacturing method |
07/11/2012 | CN102569421A Novel silicon carbide Schottky diode |
07/11/2012 | CN102569420A Distributed multiple cell integrated semiconductor discharge tube and producing method thereof |
07/11/2012 | CN102569419A Glass passivation packaging alloy type silicon voltage adjustment diode |
07/11/2012 | CN102569418A Schottky barrier transistor possessing carbonic insulating layer and manufacturing method thereof |
07/11/2012 | CN102569417A Thin film transistor and manufacturing method thereof |
07/11/2012 | CN102569416A Thin film transistor, thin film transistor substrate and production method thereof |
07/11/2012 | CN102569415A Active element |
07/11/2012 | CN102569414A Channel-etch type thin film transistor and method of manufacturing the same |
07/11/2012 | CN102569413A Thin film transistor and manufacturing method thereof |
07/11/2012 | CN102569412A Thin film transistor device and manufacturing method thereof |
07/11/2012 | CN102569411A 半导体器件及其制作方法 Semiconductor device and manufacturing method thereof |
07/11/2012 | CN102569410A Double-layer isolated semiconductor nano line MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) |
07/11/2012 | CN102569409A Double-layer isolation longitudinal stacked semiconductor nanowire MOSFET (Metal Oxide Semiconductor Field Effect Transistor) |
07/11/2012 | CN102569408A SONOS (Silicon Oxide Nitride Oxide Silicon) unit transistor with high erasing speed and manufacturing method thereof |
07/11/2012 | CN102569407A Silicon-based graphene field effect transistor and production method thereof |
07/11/2012 | CN102569406A Channel type MOS (Metal Oxide Semiconductor) transistor and manufacturing method |
07/11/2012 | CN102569405A Tunneling transistor with quasi-coaxial cable structure and forming method of tunneling transistor |
07/11/2012 | CN102569404A Transverse diffusion metal oxide semiconductor (MOS) device with low on-resistance |
07/11/2012 | CN102569403A Terminal structure of splitting gate groove power modular operating system (MOS) device and manufacturing method thereof |
07/11/2012 | CN102569402A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
07/11/2012 | CN102569401A 半导体装置及半导体包装 Semiconductor device and semiconductor packaging |
07/11/2012 | CN102569400A Metal-oxide-semiconductor device |
07/11/2012 | CN102569399A Source-drain self-aligned MOS (Metal Oxide Semiconductor) device and fabricating method thereof |
07/11/2012 | CN102569398A Graphene electronic device including a plurality of graphene channel layers |
07/11/2012 | CN102569397A High-voltage semiconductor element |
07/11/2012 | CN102569396A Transistor and manufacturing method thereof |
07/11/2012 | CN102569395A Semiconductor device and forming method thereof |
07/11/2012 | CN102569394A Transistor and manufacture method thereof |
07/11/2012 | CN102569393A Transistor, semiconductor device comprising transistor and manufacturing methods for transistor and semiconductor device |
07/11/2012 | CN102569392A Laterally diffused metal oxide semiconductor (LDMOS) transistor, layout method and manufacture method |
07/11/2012 | CN102569391A MOS (Metal Oxide Semiconductor) transistor and manufacturing method thereof |
07/11/2012 | CN102569390A High-breakdown gallium nitride-based field effect transistor device and manufacturing method thereof |
07/11/2012 | CN102569389A MOS (Metal Oxide Semiconductor) device and manufacturing method thereof |
07/11/2012 | CN102569388A Semiconductor device and manufacturing method thereof |
07/11/2012 | CN102569387A Double diffusion metal-oxide-semiconductor (DMOS) device |
07/11/2012 | CN102569386A VDMOS (vertical double-diffused metal oxide semiconductor) device with shield grid and preparation method of VDMOS device |
07/11/2012 | CN102569385A VDMOS (vertical double-diffused metal oxide semiconductor) structure provided with shielding grid and preparation method thereof |
07/11/2012 | CN102569384A Groove MOSFET (metal-oxide-semiconductor field-effect transistor) device and manufacturing method thereof |
07/11/2012 | CN102569383A MOS (metal oxide semiconductor) diode and manufacturing method thereof |
07/11/2012 | CN102569382A Metallic-oxide semiconductor element and forming method thereof |
07/11/2012 | CN102569381A LDMOS structure with shield grid and preparation method thereof |
07/11/2012 | CN102569380A Compound semiconductor device and manufacture process thereof |
07/11/2012 | CN102569379A Semiconductor device and method for manufacturing semiconductor device |
07/11/2012 | CN102569378A Compound semiconductor device and method of manufacturing the same |
07/11/2012 | CN102569377A Compound semiconductor device and method of manufacturing the same |
07/11/2012 | CN102569376A Semiconductor apparatus and method for manufacturing the semiconductor apparatus |
07/11/2012 | CN102569375A Four-quadrant triac |
07/11/2012 | CN102569374A Silicon-controlled rectifier device embedded with Zener trigger structure |
07/11/2012 | CN102569373A Insulated gate bipolar transistor (IGBT) with low-conductivity saturation voltage drop and manufacturing method for IGBT |
07/11/2012 | CN102569372A Semiconductor device |
07/11/2012 | CN102569371A Vertical parasitic PNP (plug-and-play) triode in BiCMOS (bipolar complementary metal oxide semiconductor) process and manufacturing method |
07/11/2012 | CN102569370A Vertical parasitic PNP device in BiCMOS technology and manufacturing method |
07/11/2012 | CN102569369A Random noise source |
07/11/2012 | CN102569368A Gate structure |
07/11/2012 | CN102569367A Silicon carbide semiconductor device and manufacturing method of the same |
07/11/2012 | CN102569366A High-k metal gate electrode structures |
07/11/2012 | CN102569365A Semiconductor structures and method for fabricating the same |
07/11/2012 | CN102569364A Substrate structure with high mobility and preparation method thereof |
07/11/2012 | CN102569363A High-voltage-resistant tunneling field effect transistor (TFET) and preparation method thereof |
07/11/2012 | CN102569362A Memory device, memory module and electronic device |
07/11/2012 | CN102569361A Die package |
07/11/2012 | CN102569360A Bidirectional triode thyristor based on diode auxiliary triggering |
07/11/2012 | CN102569359A Partial SOI (Silicon On Insulator) transverse double-diffused device |
07/11/2012 | CN102569358A Semiconductor device |
07/11/2012 | CN102569357A Semiconductor device |
07/11/2012 | CN102569356A Semiconductor device having guard ring structure, display driver circuit, and display apparatus |
07/11/2012 | CN102569355A Electrostatic protection element and fabrication method of electrostatic protection element |
07/11/2012 | CN102569354A Insulated gate bipolar transistor and manufacturing method thereof |
07/11/2012 | CN102569353A Semiconductor structure and preparation method thereof |
07/11/2012 | CN102569352A Nitride-based semiconductor device taking sapphire as substrate |
07/11/2012 | CN102569351A Semiconductor device and method for manufacturing the same |
07/11/2012 | CN102569350A Insulated gate bipolar transistor (IGBT) device structure with back seal and manufacturing method of IGBT device structure |
07/11/2012 | CN102569349A 使用纳米线晶体管的集成显示器 Integrated display using nanowire transistors |
07/11/2012 | CN102569344A Organic light emitting display device |
07/11/2012 | CN102569334A RRAM (resistance random access memory) device and system |