Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2012
07/24/2012US8227840 Integrated circuit device and method of forming the same
07/24/2012US8227839 Integrated circuit having TSVS including hillock suppression
07/24/2012US8227838 Semiconductor device and method of manufacturing the same
07/24/2012US8227835 Electrostatic protection device
07/24/2012US8227834 Semiconductor device
07/24/2012US8227833 Dual layer gate dielectrics for non-silicon semiconductor devices
07/24/2012US8227832 SiGe heterojunction bipolar transistor multi-finger structure
07/24/2012US8227831 Semiconductor device having a junction FET and a MISFET for control
07/24/2012US8227826 Method of storing GaN substrate, stored substrate, and semiconductor device and method of its manufacture
07/24/2012US8227822 Light emitting diode apparatus
07/24/2012US8227818 Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth
07/24/2012US8227815 Lighting device
07/24/2012US8227814 Semiconductor device and manufacturing method thereof, and camera module including the same
07/24/2012US8227810 Semiconductor device and method for manufacturing same
07/24/2012US8227809 Electro-optical device and electronic device
07/24/2012US8227807 Light emitting device, driving method of light emitting device and electronic device
07/24/2012US8227806 Active matrix display in which LDD regions in the driver circuit and the storage capacitor in the pixel section have the same dopant concentration
07/24/2012US8227805 Silicon nitride film, a semiconductor device, a display device and a method for manufacturing a silicon nitride film
07/24/2012US8227804 Organic light-emitting display device
07/24/2012US8227799 Thin film transistor
07/24/2012US8227797 Transparent display apparatus
07/24/2012US8227796 Display device
07/24/2012US8227795 Organic thin film transistor, flat panel display apparatus having the same, and a method of manufacturing organic thin film transistor
07/24/2012US8227794 Complementary logic gate device
07/24/2012US8227793 Photodetector capable of detecting the visible light spectrum
07/24/2012US8227791 Strain balanced light emitting devices
07/24/2012US8227790 Group III nitride semiconductor light-emitting device
07/24/2012US8227787 Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
07/24/2012US8227785 Chalcogenide containing semiconductors with chalcogenide gradient
07/24/2012US8227784 Semiconductor memory device including resistance-change memory
07/24/2012US8227783 Non-volatile resistive sense memory with praseodymium calcium manganese oxide
07/24/2012US8227782 Resistance change element and method of manufacturing the same
07/24/2012US8227356 Method of forming semiconductor device and semiconductor device
07/24/2012US8227341 Semiconductor device and method of manufacturing the same
07/24/2012US8227305 Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines
07/24/2012US8227272 Light emitting device having a pluralilty of light emitting cells and package mounting the same
07/24/2012US8227082 Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom
07/24/2012US8227028 Method for forming amorphous silica-based coating film with low dielectric constant and thus obtained amorphous silica-based coating film
07/19/2012WO2012097373A1 Oxide-nitride-oxide stack having multiple oxynitride layers
07/19/2012WO2012096360A1 Substituted benzochalcogenoacene compound
07/19/2012WO2012096208A1 Semiconductor device
07/19/2012WO2012096155A1 Thin-film transistor substrate and method for manufacturing same
07/19/2012WO2012096154A1 Thin-film transistor substrate and manufacturing method
07/19/2012WO2012096070A1 Process for manufacture of silicon carbide semiconductor device
07/19/2012WO2012096010A1 Method of manufacturing semiconductor device
07/19/2012WO2012094858A1 Semiconductor structure and method for fabricating the same
07/19/2012WO2012094857A1 Semiconductor device and method for manufacturing the same
07/19/2012WO2012094783A1 Method for introducing strain into channel and device manufactured by the method
07/19/2012WO2012094780A1 Soi lateral mosfet device and integrated circuit thereof
07/19/2012WO2012069606A3 Process for fabricating a field-effect transistor device implemented on a network of vertical nanowires, the resulting transistor device, an electronic device comprising such transistor devices and a processor comprising at least one such device
07/19/2012WO2012064912A3 Butted soi junction isolation structures and devices and method of fabrication
07/19/2012WO2012051133A3 Vertical semiconductor device with thinned substrate
07/19/2012WO2012034372A8 Trench vertical double diffused metal oxide semiconductor transistor
07/19/2012WO2012024114A3 Methods for forming a hydrogen free silicon containing dielectric film
07/19/2012US20120184445 Superconducting Devices with Ferromagnetic Barrier Junctions
07/19/2012US20120183008 Surface Catalyst Infra Red Laser
07/19/2012US20120182808 Memory Device, Manufacturing Method and Operating Method of the Same
07/19/2012US20120182807 Three-Dimensional Stacked and-Type Flash Memory Structure and Methods of Manufacturing and Operating the Same Hydride
07/19/2012US20120182805 Strings of memory cells having string select gates, memory devices incorporating such strings, and methods of accessing and forming the same
07/19/2012US20120182594 Microelectromechanical System (MEMS) Device, Method of Operating The Same, and Method of Forming the Same
07/19/2012US20120181668 Ink jet printable etching inks and associated process
07/19/2012US20120181667 Solar cell and method for manufacturing such a solar cell
07/19/2012US20120181666 Silicon device and silicon device manufacturing method
07/19/2012US20120181665 Structure and method for hard mask removal on an soi substrate without using cmp process
07/19/2012US20120181664 Substrate structure for semiconductor device fabrication and method for fabricating the same
07/19/2012US20120181663 Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture
07/19/2012US20120181662 Lanthanide dielectric with controlled interfaces
07/19/2012US20120181661 Method for tuning the trheshold voltage of a metal gate and high-k device
07/19/2012US20120181660 Semiconductor device
07/19/2012US20120181659 Semiconductor device and method of manufacturing the same
07/19/2012US20120181658 High density three-dimensional integrated capacitors
07/19/2012US20120181657 Forming Metal-Insulator-Metal Capacitors Over a Top Metal Layer
07/19/2012US20120181656 Semiconductor Device and Method of Manufacturing Thereof
07/19/2012US20120181654 Multi-Layer Single Crystal 3D Stackable Memory
07/19/2012US20120181653 Semiconductor pn junction structure and manufacturing method thereof
07/19/2012US20120181652 Semiconductor system and method for manufacturing same
07/19/2012US20120181651 Temperature Sensor Based on Magnetic Tunneling Junction Device
07/19/2012US20120181644 Low power magnetic random access memory cell
07/19/2012US20120181643 Spin transport device
07/19/2012US20120181642 Magnetic tunnel junction comprising a polarizing layer
07/19/2012US20120181641 Sensor module
07/19/2012US20120181640 Semiconductor Devices Having Insulating Substrates and Methods of Formation Thereof
07/19/2012US20120181639 Component and method for the manufacture thereof
07/19/2012US20120181638 Method for mems device fabrication and device formed
07/19/2012US20120181637 Bulk silicon moving member with dimple
07/19/2012US20120181636 Printing of Contact Metal and Interconnect Metal Via Seed Printing and Plating
07/19/2012US20120181635 Semiconductor device
07/19/2012US20120181634 Method of Introducing Strain Into Channel and Device Manufactured by Using the Method
07/19/2012US20120181633 Semiconductor Device, An Electronic Device and an Electronic Apparatus
07/19/2012US20120181632 Semiconductor device and its manufacuturing method
07/19/2012US20120181631 METHOD AND STRUCTURE FOR PMOS DEVICES WITH HIGH K METAL GATE INTEGRATION AND SiGe CHANNEL ENGINEERING
07/19/2012US20120181630 Replacement gate with reduced gate leakage current
07/19/2012US20120181629 HV Interconnection Solution Using Floating Conductors
07/19/2012US20120181628 Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device
07/19/2012US20120181627 Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device
07/19/2012US20120181626 Fabrication of Semiconductor Architecture Having Field-effect Transistors Especially Suitable for Analog Applications
07/19/2012US20120181625 Method of manufacturing strained source/drain structures
07/19/2012US20120181621 Field effect devices controlled via a nanotube switching element
07/19/2012US20120181612 Low tcr high resistance resistor
07/19/2012US20120181609 Fully depleted soi device with buried doped layer