Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2012
06/28/2012US20120161289 Strain relaxation using metal materials and related structures
06/28/2012US20120161288 Thermal oxidation of single crystal aluminum antimonide and materials having the same
06/28/2012US20120161287 METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
06/28/2012US20120161284 Chip resistor and method for manufacturing the same
06/28/2012US20120161282 Method for Forming a Ruthenium Film
06/28/2012US20120161281 Method of manufacturing semiconductor device capable of suppressing peeling of lower electrode of capacitor
06/28/2012US20120161280 Capacitor with recessed plate portion for dynamic random access memory (dram) and method to form the same
06/28/2012US20120161276 Semiconductor device comprising an isolation trench including semiconductor islands
06/28/2012US20120161275 Methods for forming a bonded semiconductor substrate including a cooling mechanism
06/28/2012US20120161274 Superjunction semiconductor device
06/28/2012US20120161273 Thermoelectric conversion material
06/28/2012US20120161266 Methods and systems of isolating segmented radiation detectors using alumina
06/28/2012US20120161264 Junction isolation for magnetic read sensor
06/28/2012US20120161262 Magnetic tunnel junction device
06/28/2012US20120161261 Magnetic phase change logic
06/28/2012US20120161260 Method for packaging a sensor chip, and a component produced using such a method
06/28/2012US20120161259 Package With A CMOS Die Positioned Underneath A MEMS Die
06/28/2012US20120161258 Package with a cmos die positioned underneath a mems die
06/28/2012US20120161257 Method for Fabricating a Cavity Structure, for Fabricating a Cavity Structure for a Semiconductor Structure and a Semiconductor Microphone Fabricated by the Same
06/28/2012US20120161256 Flow sensing device and packaging thereof
06/28/2012US20120161255 Sealed mems cavity and method of forming same
06/28/2012US20120161254 Method of Providing a Semiconductor Structure with Forming A Sacrificial Structure
06/28/2012US20120161253 Gas sensor and manufacturing method thereof
06/28/2012US20120161252 Forming conformal metallic platinum zinc films for semiconductor devices
06/28/2012US20120161251 Transistor channel mobility using alternate gate dielectric materials
06/28/2012US20120161250 Transistor Comprising High-K Metal Gate Electrode Structures Including a Polycrystalline Semiconductor Material and Embedded Strain-Inducing Semiconductor Alloys
06/28/2012US20120161249 Reduction of Defect Rates in PFET Transistors Comprising a Silicon/Germanium Semiconductor Material by Providing a Graded Germanium Concentration
06/28/2012US20120161236 Electrostatic discharge protection device and manufacturing method thereof
06/28/2012US20120161235 Electrostatic discharge protection device and manufacturing method thereof
06/28/2012US20120161234 Method of manufacturing thin film transistor and thin film transistor substrate
06/28/2012US20120161233 Reduction of Parasitic Capacitance in a Semiconductor Device
06/28/2012US20120161231 Semiconductor device
06/28/2012US20120161230 Mos transistor and fabrication method thereof
06/28/2012US20120161229 Dram cell utilizing a doubly gated vertical channel
06/28/2012US20120161228 Vertical transistor structure
06/28/2012US20120161227 Semiconductor device and method of forming the same
06/28/2012US20120161226 Semiconductor Device
06/28/2012US20120161223 Discrete trap non-volatile multi-functional memory device
06/28/2012US20120161222 Method for filling a physical isolation trench and integrating a vertical channel array with a periphery circuit
06/28/2012US20120161221 Non-volatile memory and fabricating method thereof
06/28/2012US20120161220 Semiconductor device
06/28/2012US20120161218 Semiconductor device and method for manufacturing the same
06/28/2012US20120161217 Semiconductor device
06/28/2012US20120161215 Rectangular capacitors for dynamic random access memory (dram) and dual-pass lithography methods to form the same
06/28/2012US20120161212 Continuous metal semiconductor alloy via for interconnects
06/28/2012US20120161211 Semiconductor device
06/28/2012US20120161210 Embedding Metal Silicide Contact Regions Reliably Into Highly Doped Drain and Source Regions by a Stop Implantation
06/28/2012US20120161209 Electronic interconnects and devices with topological surface states and methods for fabricating same
06/28/2012US20120161208 Semiconductor Devices with Minimized Current Flow Differences and Methods of Same
06/28/2012US20120161207 Chemical sensing and/or measuring devices and methods
06/28/2012US20120161205 Group iii nitride semiconductor wafer and group iii nitride semiconductor device
06/28/2012US20120161204 Transistor Comprising an Embedded Sigma Shaped Sequentially Formed Semiconductor Alloy
06/28/2012US20120161203 Strain Enhancement in Transistors Comprising an Embedded Strain-Inducing Semiconductor Material by Alloy Species Condensation
06/28/2012US20120161202 Junctionless accumulation-mode devices on prominent architectures, and methods of making same
06/28/2012US20120161201 Fast switching lateral insulated gate bipolar transistor (ligbt) with trenched contacts
06/28/2012US20120161200 Double-groove bidirectional vertical component
06/28/2012US20120161199 Mesa-type bidirectional shockley diode
06/28/2012US20120161198 Bidirectional shockley diode with extended mesa
06/28/2012US20120161158 Combined substrate having silicon carbide substrate
06/28/2012US20120161157 Silicon carbide substrate
06/28/2012US20120161156 Tribology combined with corrosion resistance: a new family of pvd- and pacvd coatings
06/28/2012US20120161155 Silicon carbide substrate, semiconductor device, method of manufacturing silicon carbide substrate and method of manufacturing semiconductor device
06/28/2012US20120161154 Silicon carbide semiconductor device and manufacturing method of the same
06/28/2012US20120161153 Semiconductor device
06/28/2012US20120161152 Epitaxial substrate and method for manufacturing epitaxial substrate
06/28/2012US20120161151 Solid state lighting devices and associated methods of manufacturing
06/28/2012US20120161150 Method for determining the structure of a transistor
06/28/2012US20120161149 Intermediate epitaxial structure and method for fabricating an epitaxial structure
06/28/2012US20120161148 Nitride semiconductor substrate and method for manufacturing the same
06/28/2012US20120161147 High temperature strain sensor
06/28/2012US20120161146 Semiconductor device and manufacturing method thereof
06/28/2012US20120161145 Semiconductor device and semiconductor memory device
06/28/2012US20120161144 Polysilicon thin film transistor having trench type copper bottom gate structure and method of making the same
06/28/2012US20120161143 Crystal silicon film forming method, thin-film transistor and display device using the crystal silicon film
06/28/2012US20120161139 Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
06/28/2012US20120161138 Semiconductor transistor manufacturing method, driving circuit utilizing a semiconductor transistor manufactured according to the semiconductor transistor manufacturing method, pixel circuit including the driving circuit and a display element, display panel having the pixel circuits disposed in a matrix, display apparatus provided with the display panel
06/28/2012US20120161137 Array substrate for in-plane switching mode liquid crystal display device and fabricating method thereof
06/28/2012US20120161135 Pixel structure
06/28/2012US20120161134 Thin film transistor and flat display device
06/28/2012US20120161132 Semiconductor device and manufacturing method thereof
06/28/2012US20120161131 Thin-film transistor substrate and method of manufacturing the same
06/28/2012US20120161130 Electrode, photoelectric conversion device using the electrode, and manufacturing method thereof
06/28/2012US20120161127 Memory device, memory module and electronic device
06/28/2012US20120161126 Semiconductor device and manufacturing method thereof
06/28/2012US20120161125 Semiconductor device and manufacturing method thereof
06/28/2012US20120161124 Semiconductor device and method for manufacturing the same
06/28/2012US20120161123 Semiconductor device and method for manufacturing the same
06/28/2012US20120161122 Semiconductor device and method for manufacturing the same
06/28/2012US20120161121 Semiconductor device and method for manufacturing the same
06/28/2012US20120161118 Semiconductor device and method of manufacturing the same
06/28/2012US20120161105 Uniaxially strained quantum well device and method of making same
06/28/2012US20120161098 Substrate, manufacturing method of substrate, semiconductor element, and manufacturing method of semiconductor element
06/28/2012US20120161093 Via-Configurable High-Performance Logic Block Architecture
06/28/2012US20120161018 Thin film transistor array substrate for x-ray detector and x-ray detector
06/28/2012DE112010001589T5 Kompensierter GATE-MISFET und Verfahren zu seiner Herstellung Compensated gate MISFET and process for its preparation
06/28/2012DE112010000142T5 Kostenoptimiertes Verfahren zum Bilden von hoch dichten passiven Kondensatoren zum Ersetzen diskreter Kondensatoren unter Verwendung eines kostenoptimierten modularen 3D-Wafer-Wafer-Integrationsschemas Cost-effective methods of forming high density passive capacitors to replace discrete capacitors using a cost-optimized modular 3D wafer-wafer integration scheme
06/28/2012DE112009004071T5 Grabenbasierte leistungshalbleitervorrichtungen mit eigenschaften einer erhöhten durchbruchspannung Grave-based power semiconductor devices with properties increased by breakdown voltage
06/28/2012DE102011122092A1 Lithographiefreier Schottky-Halbleiterprozess mit Möglichkeit der Integration einer Schutzdiode Free Schottky semiconductor lithography process with the possibility of integrating a protection diode
06/28/2012DE102011089322A1 Effizienzsteigerungen bei der Ultraviolett-Aushärtung einer zugverspannten Schicht unter Anwendung reflektierender Materialien Efficiency improvements in the ultraviolet curing of a tensile-strained layer using reflective materials
06/28/2012DE102011088867A1 Siliziumkarbidhalbleitervorrichtung und herstellungsverfahren hierfür Silicon carbide semiconductor device and manufacturing method therefor
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