Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2012
06/26/2012US8207573 Semiconductor devices with asymmetric recesses and gate structures that fill such recesses
06/26/2012US8207572 Nonvolatile semiconductor memory device
06/26/2012US8207571 Non-volatile memory device with a threshold voltage change rate controlled by gate oxide phase
06/26/2012US8207570 Semiconductor constructions
06/26/2012US8207568 Process for single and multiple level metal-insulator-metal integration with a single mask
06/26/2012US8207567 Metal-oxide-metal structure with improved capacitive coupling area
06/26/2012US8207566 Vertical channel transistor and method of fabricating the same
06/26/2012US8207560 Nonvolatile semiconductor memory device and method of fabricating the same
06/26/2012US8207559 Schottky junction-field-effect-transistor (JFET) structures and methods of forming JFET structures
06/26/2012US8207558 Semiconductor device, DC/DC converter and power supply
06/26/2012US8207556 Group III nitride semiconductor device and epitaxial substrate
06/26/2012US8207548 Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
06/26/2012US8207544 Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device
06/26/2012US8207541 Light output device
06/26/2012US8207537 Display device
06/26/2012US8207536 Semiconductor device and fabrication method thereof
06/26/2012US8207535 Thin film transistor substrate and fabricating method thereof
06/26/2012US8207534 Thin film transistor array panel and manufacturing method thereof
06/26/2012US8207533 Electronic device, semiconductor device and manufacturing method thereof
06/26/2012US8207531 Thin film transistor, display device using thin film transistor, and production method of thin film transistor
06/26/2012US8207530 Oxide semiconductor and thin film transistor including the same
06/26/2012US8207525 Organic thin film transistor and organic thin film light emitting transistor
06/26/2012US8207523 Metal oxide semiconductor field effect transistor with strained source/drain extension layer
06/26/2012US8207521 Method for producing catalyst-free single crystal silicon nanowires, nanowires produced by the method and nanodevice comprising the nanowires
06/26/2012US8207520 Programmable crosspoint device with an integral diode
06/26/2012US8207518 Information recording and reproducing device
06/26/2012US8207449 Nano-wire electronic device
06/26/2012US8207050 Laser mask and crystallization method using the same
06/26/2012US8207036 Method for forming self-aligned dielectric cap above floating gate
06/26/2012US8207027 Triple gate and double gate finFETs with different vertical dimension fins
06/26/2012US8207024 Display device
06/26/2012US8206838 Matrix comprises aromatic repeat units and luminescent metal ion/complex; photoluminescent; phosphors
06/26/2012CA2442929C Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
06/26/2012CA2421003C Method of fabricating an oxide layer on a silicon carbide layer utilizing n2o
06/21/2012WO2012082955A2 Etched wafers and methods of forming the same
06/21/2012WO2012082519A1 Transistors with isolation regions
06/21/2012WO2012082329A2 Tunnel field effect transistor
06/21/2012WO2012082307A1 High indium content transistor channels
06/21/2012WO2012081961A1 Chemical resistive gas sensor for hydrogen sulphide
06/21/2012WO2012081694A1 Spin conductance structure, memory element, spin transistor, and method for forming spin conductance structure
06/21/2012WO2012081664A1 Semiconductor device and process for production thereof
06/21/2012WO2012081648A1 A method for preparing an interface surface for the deposition of an organic semiconductor material and an organic thin film transistor
06/21/2012WO2012081591A1 Oxide material and semiconductor device
06/21/2012WO2012081474A1 Method for forming crystalline semiconductor film
06/21/2012WO2012081237A1 Semiconductor device and method for controlling same
06/21/2012WO2012080811A1 Semiconductor pressure sensor
06/21/2012WO2012080252A1 Nanowire epitaxy on a graphitic substrate
06/21/2012WO2012080076A1 Memory device comprising a strained semiconductor double-heterostructure and quantum dots
06/21/2012WO2012079477A1 Scr apparatus and method for adjusting the sustaining voltage
06/21/2012WO2012079463A1 Cmos devices and method for manufacturing the same
06/21/2012WO2012079458A1 Ldmos device and fabrication method thereof
06/21/2012WO2012079456A1 Trench mosfet device and method for fabricating the same
06/21/2012WO2012079304A1 Mos transistor and manufacturing method thereof
06/21/2012WO2012079272A1 Transistor and semiconductor device having transistor and manufacturing method thereof
06/21/2012WO2012079262A1 Silicon on insulator (soi) device for driving chip of plasma display panel
06/21/2012WO2012058262A3 Vicinal semipolar iii-nitride substrates to compensate tilt of relaxed hetero-epitaxial layers
06/21/2012WO2012057543A3 Method for manufacturing a thin film transistor
06/21/2012WO2012054682A3 Improved schottky rectifier
06/21/2012WO2012047770A3 Chemical mechanical planarization processes for fabrication of finfet devices
06/21/2012WO2012047008A3 Method for manufacturing a polycrystalline silicon thin film
06/21/2012WO2012040080A3 Microelectronic transistor having an epitaxial graphene channel layer
06/21/2012US20120155165 Memory
06/21/2012US20120155164 Multibit Cell of Magnetic Random Access Memory With Perpendicular Magnetization
06/21/2012US20120154026 Integrated circuit and semiconductor device
06/21/2012US20120154025 Dual-gate transistors
06/21/2012US20120154019 Field-effect magnetic sensor
06/21/2012US20120153487 Substrate for electron-beam drawing
06/21/2012US20120153481 Semiconductor device and method for manufacturing the same
06/21/2012US20120153474 Integrated circuit system with reduced polysilicon residue and method of manufacture thereof
06/21/2012US20120153441 Overlay mark enhancement feature
06/21/2012US20120153440 Epitaxial substrate for electronic device and method of producing the same
06/21/2012US20120153439 Stacked layers of nitride semiconductor and method for manufacturing the same
06/21/2012US20120153438 Multiple noble metals for lifetime suppression for power semiconductors
06/21/2012US20120153437 Esd protection structure for 3d ic
06/21/2012US20120153436 Semiconductor device and data processing system using the same
06/21/2012US20120153435 Enhanced stacked microelectronic assemblies with central contacts and improved ground or power distribution
06/21/2012US20120153434 Metal-insulator-metal capacitors with high capacitance density
06/21/2012US20120153431 Integrated circuit and a method using integrated process steps to form deep trench isolation structures and deep trench capacitor structures for the integrated circuit
06/21/2012US20120153427 Integrated circuit and method of fabricating same
06/21/2012US20120153426 Void-free wafer bonding using channels
06/21/2012US20120153415 Mounting structure of chip type electric element and electric apparatus having chip type electric element on flexible board
06/21/2012US20120153413 Non-Volatile Memory Cell with Lateral Pinning
06/21/2012US20120153412 Write current reduction in spin transfer torque memory devices
06/21/2012US20120153411 Spin torque transfer magnetoresistive random access memory in disk base with reduced threshold current
06/21/2012US20120153410 Semiconductor chip and semiconductor package having the same
06/21/2012US20120153409 Thin Semiconductor Device Having Embedded Die Support and Methods of Making the Same
06/21/2012US20120153408 Mems device forming method and device with mems structure
06/21/2012US20120153406 Semiconductor device and method for fabricating the same
06/21/2012US20120153405 Semiconductor Device Comprising a Contact Structure with Reduced Parasitic Capacitance
06/21/2012US20120153404 Anti-fuse device and semiconductor device and system including the same
06/21/2012US20120153403 Semiconductor devices and methods of fabricating the same
06/21/2012US20120153400 Tunneling transistors
06/21/2012US20120153398 Encapsulation of Closely Spaced Gate Electrode Structures
06/21/2012US20120153395 Semiconductor device and method for manufacturing semiconductor device
06/21/2012US20120153393 Transistor, Semiconductor Device Comprising the Transistor and Method for Manufacturing the Same
06/21/2012US20120153392 Manufacturing method for semiconductor structure, and pixel structure and manufacturing method for the same
06/21/2012US20120153391 Modular low stress package technology
06/21/2012US20120153390 Transistors with isolation regions
06/21/2012US20120153388 Semiconductor device and method for manufacturing the same
06/21/2012US20120153387 Transistors with high concentration of boron doped germanium
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