Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2012
06/21/2012US20120153385 Semiconductor device and method for fabricating the same
06/21/2012US20120153384 Semiconductor Power Device Having A Top-side Drain Using A Sinker Trench
06/21/2012US20120153383 Semiconductor device with buried gate and method for fabricating the same
06/21/2012US20120153382 Semiconductor device
06/21/2012US20120153381 Semiconductor device and method for forming the same
06/21/2012US20120153380 Method for fabricating semiconductor device
06/21/2012US20120153379 Semiconductor devices with vertical channel transistors
06/21/2012US20120153378 Semiconductor device and method for forming the same
06/21/2012US20120153377 Edge rounded field effect transistors and methods of manufacturing
06/21/2012US20120153376 Stacked metal fin cell
06/21/2012US20120153375 Nonvolatile semiconductor memory device
06/21/2012US20120153374 Semiconductor device and method of manufacturing the same
06/21/2012US20120153373 Gate structure
06/21/2012US20120153372 Three dimensional semiconductor memory devices and methods of forming the same
06/21/2012US20120153369 Semiconductor device and method for forming the same
06/21/2012US20120153367 Semiconductor apparatus
06/21/2012US20120153366 Semiconductor Device Comprising Self-Aligned Contact Bars and Metal Lines With Increased Via Landing Regions
06/21/2012US20120153365 Semiconductor device and method of manufacturing the same
06/21/2012US20120153364 Oxide material and semiconductor device
06/21/2012US20120153363 Semiconductor device with buried gates and fabrication method thereof
06/21/2012US20120153362 Semiconductor device and method of manufacturing the same
06/21/2012US20120153361 Field-effect transistor and manufacturing method thereof
06/21/2012US20120153360 Method and device for regenerating a hydrogen sensor
06/21/2012US20120153359 Nickel-silicide formation with differential pt composition
06/21/2012US20120153356 High electron mobility transistor with indium gallium nitride layer
06/21/2012US20120153355 Nitride semiconductor device
06/21/2012US20120153354 Performance enhancement in transistors comprising high-k metal gate stacks and an embedded stressor by performing a second epitaxy step
06/21/2012US20120153353 Buried oxidation for enhanced mobility
06/21/2012US20120153352 High indium content transistor channels
06/21/2012US20120153351 Stress modulated group III-V semiconductor device and related method
06/21/2012US20120153350 Semiconductor devices and methods for fabricating the same
06/21/2012US20120153348 Insulated gate bipolar transistor and manufacturing method thereof
06/21/2012US20120153346 Method for producing recycled substrate, recycled substrate, nitride semiconductor element, and lamp
06/21/2012US20120153338 Substrate structure and fabrication thereof, and light emitting diode devices fabricated from the same
06/21/2012US20120153303 Semiconductor element and method for manufacturing same
06/21/2012US20120153302 Recessed gate-type silicon carbide field effect transistor and method of producing same
06/21/2012US20120153301 Iii-v semiconductor structures including aluminum-silicon nitride passivation
06/21/2012US20120153300 Semiconductor devices with back surface isolation
06/21/2012US20120153298 Epitaxial growth system for fast heating and cooling
06/21/2012US20120153297 Ohmic cathode electrode on the backside of nonpolar m-plane (1-100) and semipolar (20-21) bulk gallium nitride substrates
06/21/2012US20120153295 Ionic junction for radiation detectors
06/21/2012US20120153294 Semiconductor Structures Having Directly Bonded Diamond Heat Sinks and Methods for Making Such Structures
06/21/2012US20120153293 Display Device
06/21/2012US20120153292 Liquid crystal display device
06/21/2012US20120153291 Vertical Memory Devices Including Indium And/Or Gallium Channel Doping
06/21/2012US20120153289 Semiconductor device, active matrix substrate, and display device
06/21/2012US20120153285 Solution processable passivation layers for organic electronic devices
06/21/2012US20120153277 Channel-etch type thin film transistor and method of manufacturing the same
06/21/2012US20120153276 Semiconductor device
06/21/2012US20120153275 Semiconductor device and manufacturing method thereof
06/21/2012US20120153263 Tunnel field effect transistor
06/21/2012US20120153262 Systems and process for forming carbon nanotube sensors
06/21/2012US20120153261 Semiconductor Device And Method Of Manufacturing The Same
06/21/2012US20120153260 Chemically-etched nanostructures and related devices
06/21/2012US20120153257 High-quality non-polar/semi-polar semiconductor element on an unevenly patterned substrate and a production method therefor
06/21/2012US20120153251 Selective emitter nanowire array and methods of making same
06/21/2012US20120152869 Reading stand
06/21/2012DE112010003053T5 Verfahren zumn Herstellen einer Siliziumkarbid-Halbleitervorrichtung A method zumn producing a silicon carbide semiconductor device
06/21/2012DE112010003051T5 Abgeschirmte Kontakte in einem MOSFET mit abgeschirmtem Gate Screened contacts in a shielded gate MOSFET
06/21/2012DE112010002895T5 Verfahren und Struktur zur Bildung leistungsstarker FETs mit eingebetteten Stressoren Method and structure for the formation of high-performance FETs with embedded stressors
06/21/2012DE112010002324T5 Unterschiedlich ausgerichtete Nanodrähte mit Gate-Elektrodenstapeln als Spannungselemente Differently oriented nanowires with gate electrode stacks as tension members
06/21/2012DE112009005044T5 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation
06/21/2012DE112009004065T5 HALBLEITEREINRICHTUNG MIT EINEM HALBLEITERSUBSTRAT EINSCHLIEßLICHEINEM DIODENBEREICH UND EINEM IGBT BEREICH SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR SUBSTRATE EINSCHLIEßLICHEINEM DIODES AREA AND A RANGE IGBT
06/21/2012DE102011088714A1 Halbleiterbauelemente und Verfahren zur deren Herstellung Semiconductor devices and methods for their preparation
06/21/2012DE102011087064A1 Halbleitervorrichtung und Verfahren für deren Herstellung Semiconductor device and methods for their preparation
06/21/2012DE102011086733A1 Halbleitervorrichtung Semiconductor device
06/21/2012DE102011085196A1 Bipolartransistor mit isoliertem Gate und Herstellungsverfahren desselben Of the same insulated gate bipolar transistor and manufacturing processes
06/21/2012DE102011055816A1 Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device
06/21/2012DE102011055545A1 Testvorrichtung Test device
06/21/2012DE102011055530A1 Testing apparatus for avalanche breakdown testing of e.g. insulated gate bipolar transistor, has probe whose opening/closing structure holds operator from accessing substrate accommodated in probe in locked state
06/21/2012DE102011050122A1 Component useful as a circuit breaker for an inverter, comprises a MOSFET having a gate terminal and a source terminal, a first diode for measuring a junction temperature of the MOSFET, and a second diode and/or a third diode
06/21/2012DE102010063314A1 Semiconductor device e.g. part of motor vehicle alternator, has P-plus doped layer and N-plus doped layer filled with P-doped poly-silicon, and etched trenches provided at N-doped section in region of base and/or between P-doped layers
06/21/2012DE102005031702B4 Transistorstruktur eines Speicherbauelements und Verfahren zur Herstellung desselben Of the same transistor structure of a memory device and methods for preparing
06/21/2012DE10117874B4 Flüssigkristallanzeige Liquid-crystal display
06/21/2012CA2820904A1 Nanowire epitaxy on a graphitic substrate
06/20/2012EP2466629A2 A method and a structure for enhancing electrical insulation and dynamic performance of mis structures comprising vertical field plates
06/20/2012EP2466628A1 Bipolar transistor manufacturing method and bipolar transistor
06/20/2012EP2465888A1 Polymer compound and method for producing the same
06/20/2012EP2465142A1 Semiconductor structure
06/20/2012EP2465141A1 Island matrixed gallium nitride microwave and power switching transistors
06/20/2012EP2465140A1 Heterojunction oxide non-volatile memory device
06/20/2012EP2465137A1 Method for manufacturing a single crystal nano-wire.
06/20/2012EP2255177B1 Sensor device for detecting particles
06/20/2012EP2219225B1 Oxide semiconductor material, method for manufacturing oxide semiconductor material, electronic device and field effect transistor
06/20/2012EP1269528B1 Method of forming a dielectric film
06/20/2012CN202282354U 一种薄膜晶体管及显示装置 A thin film transistor and a display device
06/20/2012CN202282353U 绝缘栅双极晶体管的器件结构 The device structure of an insulated gate bipolar transistor
06/20/2012CN202282352U 通过外延方法形成fs层的高压igbt Fs layer formation by epitaxy igbt high pressure
06/20/2012CN202282351U 外延片用衬底、外延片及半导体器件 Epitaxial wafer substrates, epitaxial wafers and semiconductor devices
06/20/2012CN202281890U Tft阵列基板及液晶面板 Tft array substrate and a liquid crystal panel
06/20/2012CN1989601B Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
06/20/2012CN1901205B 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
06/20/2012CN1723571B Microelectromechanical systems device and its manufacture method
06/20/2012CN1670943B Operating method of the memory
06/20/2012CN102511089A Novel organic semiconductive material and electronic device using the same
06/20/2012CN102511082A Semiconductor device and method for manufacturing the same
06/20/2012CN102511081A Method and structure for forming high-performance FETs with embedded stressors
06/20/2012CN102511076A Optimized halo or pocket cold implants
06/20/2012CN102511075A Epitaxial substrate and method for producing same
06/20/2012CN102511074A Process for producing silicon carbide substrate, process for producing semiconductor device, silicon carbide substrate, and semiconductor device
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