Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2012
06/28/2012DE102011080351A1 Halbleitereinrichtung mit einer lateralen Diode A semiconductor device with a lateral diode
06/28/2012DE102011078243A1 Herstellungsverfahren für ein elektronisches Bauteil mit einem Schritt zur Einbettung einer Metallschicht Manufacturing method for an electronic component comprising a step of embedding a metal layer
06/28/2012DE102011056956A1 Halbleitervorrichtung mit Diode A semiconductor device comprising diode
06/28/2012DE102010064288A1 Halbleiterbauelement mit Kontaktelementen mit silizidierten Seitenwandgebieten Semiconductor component with contact elements with silicided sidewall areas
06/28/2012DE102010064287A1 Zuverlässige Einbettung von Metallsilizidkontaktgebieten in stark dotierten Drain- und Sourcegebieten durch eine Stoppimplantation Reliable embedding Metallsilizidkontaktgebieten in heavily doped drain and source regions by a stop implant
06/28/2012DE102010064282A1 Transistor mit eingebetteten sigma-förmigen sequenziell hergestellten Halbleiterlegierungen Transistor with embedded sigma-shaped sequentially produced semiconductor alloys
06/28/2012DE102010064281A1 Herstellung einer Kanalhalbleiterlegierung durch Erzeugen eines Hartmaskenschichtstapels und Anwenden eines plasmaunterstützten Maskenstrukturierungsprozesses Preparing a semiconductor alloy channel by producing a stack of hard mask layer and applying a plasma assisted mask patterning process
06/28/2012DE102010064280A1 Verfahren zur Verringerung der Defektraten in PFET-Transistoren, die ein Si/GE Halbleitermaterial aufweisen, durch Vorsehen einer graduellen Ge-Konzentration, und entsprechende PFET-Transistoren A method of reducing the defect rate in PFET transistors having a Si / Ge semiconductor material, by providing a gradual Ge concentration, and corresponding PFET transistors
06/28/2012DE102010056409A1 Gruppe-III-Nitrid basierte Schichtenfolge, Halbleiterbauelement, umfassend eine Gruppe-III-Nitrid basierte Schichtenfolge und Verfahren zur Herstellung Group III-nitride based layer sequence semiconductor device comprising a Group III-nitride based layer sequence and methods for making
06/27/2012EP2469600A1 Semiconductor device
06/27/2012EP2469583A2 Stress modulated group iii-v semiconductor device and related method
06/27/2012EP2469581A1 Semiconductor element and production method thereof
06/27/2012EP2469331A1 Liquid crystal display device and method for manufacturing liquid crystal display device
06/27/2012EP2467876A1 Transistor power switch device and method of measuring its characteristics
06/27/2012EP2020031B1 Method for forming high performance 3d fet structures using preferential crystallographic etching
06/27/2012EP1631990B1 Method of manufacturing a field effect transistor
06/27/2012EP1323191B1 Method for manufacturing a trench dmos transistor with embedded trench schottky rectifier
06/27/2012EP1090425B1 Methods of forming independently programmable memory segments in isolated N-wells within a PMOS EEPROM device
06/27/2012CN202285237U Flexible semi-transparent indium gallium zinc oxide (IGZO) thin-film transistor
06/27/2012CN1893000B Method for manufacturing semiconductor device
06/27/2012CN1871699B Method for manufacturing compound semiconductor substrate
06/27/2012CN1866482B Thin film transistor and making method thereof
06/27/2012CN102522432A Semiconductor device with surge current protection and method of making the same
06/27/2012CN102522431A Schottky barrier diode rectifying device and manufacture method thereof
06/27/2012CN102522430A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
06/27/2012CN102522429A Thin film transistor on basis of metal oxide and preparation method and application thereof
06/27/2012CN102522428A High-voltage LDMOS (laterally diffused metal oxide semiconductor) structure
06/27/2012CN102522427A Semiconductor device
06/27/2012CN102522426A Silicon nanometer wire detecting unit
06/27/2012CN102522425A Structure of ultrahigh pressure germanium-silicon heterojunction bipolar transistor (HBT) device and preparation method
06/27/2012CN102522424A CMOS device capable of reducing charge sharing effect and manufacturing method thereof
06/27/2012CN102522411A Thin film transistor, array substrate using thin film transistor and manufacturing method of array substrate
06/27/2012CN102522410A TFT array substrate and manufacturing method thereof
06/27/2012CN102522409A Non-volatile flash memory cell, array and method of manufacturing
06/27/2012CN102522403A Metal-oxide-metal (MOM) capacitor possessing low parasitic capacitance
06/27/2012CN102522365A Application of tellurium-based composite film as SOI (Semiconductor On Insulator) material and SOI power device
06/27/2012CN102522338A Forming method of high-voltage super-junction metal oxide semiconductor field effect transistor (MOSFET) structure and P-shaped drift region
06/27/2012CN102522335A Power device terminal ring production method and structure of terminal ring
06/27/2012CN102522332A ONO (oxide-nitride-oxide) structure and manufacturing method thereof, memory and manufacturing method thereof
06/27/2012CN102176215B Modeling method for SPICE model series of SOI (Silicon on Insulator) field effect transistor
06/27/2012CN102130159B High electron mobility transistor
06/27/2012CN102110712B Lateral power metal oxide semiconductor field effect transistor structure and manufacturing method
06/27/2012CN102097480B N-type super-junction transverse double-diffusion metal oxide semiconductor tube
06/27/2012CN101976650B Thin film transistor and manufacture method thereof
06/27/2012CN101964344B Panel display driving chip based on silicon on insulator (SOI) and preparation method thereof
06/27/2012CN101946329B Semiconductor device and method for manufacturing the same
06/27/2012CN101933146B 碳化硅半导体器件 Silicon carbide semiconductor device
06/27/2012CN101903992B Improved manufacturing method for planar independent-gate or gate-all-around transistors
06/27/2012CN101887914B Transistor unit
06/27/2012CN101887911B Lateral bipolar junction transistor and manufacturing method thereof
06/27/2012CN101884255B Method of disposing selectively two types of substances on surface of substrate
06/27/2012CN101877346B Static discharge protection system and static discharge protection circuit
06/27/2012CN101872786B Silicon carbide high pressure N-type metal oxide transistor with floating buried layer and method
06/27/2012CN101872785B Silicon carbide high pressure P-type metal oxide transistor with floating buried layer and method
06/27/2012CN101821853B Semiconductor device and manufacturing method thereof
06/27/2012CN101796613B Semiconductor device and electronic appliance
06/27/2012CN101719514B Field effect transistor and process for production thereof
06/27/2012CN101714579B Ferroelectric capacitor, method of manufacturing ferroelectric capacitor, and ferroelectric memory
06/27/2012CN101689570B Cascode circuit employing a depletion-mode, gan-based fet
06/27/2012CN101689547B Memory device and its reading method
06/27/2012CN101677099B Semiconductor device
06/27/2012CN101661904B Semiconductor device and method for fabricating same
06/27/2012CN101656207B Semiconductor device and manufacturing method
06/27/2012CN101558500B Power semiconductor device
06/27/2012CN101533843B Semiconductor device
06/27/2012CN101523579B Local collector implant structure for heterojunction bipolar transistors and method of forming the same
06/27/2012CN101471378B Isolated gate bipolar transistor and its manufacturing method
06/27/2012CN101364610B Groove type power metal oxide semiconductor and preparation thereof
06/27/2012CN101355105B Semiconductor device and method of manufacturing the same
06/27/2012CN101355089B Display device
06/27/2012CN101351892B Semiconductor device and method for manufacturing same
06/27/2012CN101309864B Semiconductor thin film, method for producing same, and thin film transistor
06/27/2012CN101281931B Transistor
06/27/2012CN101174654B Cylindrical channel charge trapping devices with effectively high coupling ratios
06/27/2012CN101162737B Thin film transistor using an oriented zinc oxide layer
06/27/2012CN101145581B 半导体器件 Semiconductor devices
06/27/2012CN101111943B Nonvolatile storage device and manufacturing method thereof
06/27/2012CN101097956B Finfet structure and method for fabricating the same
06/27/2012CN101084616B Wireless chip
06/27/2012CN101009322B Light-emitting device
06/27/2012CA2779961A1 Silicon carbide substrate, semiconductor device, method of manufacturing silicon carbide substrate and method of manufacturing semiconductor device
06/26/2012US8208311 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
06/26/2012US8207617 Electrical connections for multichip modules
06/26/2012US8207616 Adhesive film, dicing die bonding film and semiconductor device using the same
06/26/2012US8207614 Methods for forming arrays of small, closely spaced features
06/26/2012US8207610 Semiconductor device having a multilayer interconnection structure
06/26/2012US8207595 Semiconductor having a high aspect ratio via
06/26/2012US8207594 Semiconductor integrated circuit device
06/26/2012US8207593 Memristor having a nanostructure in the switching material
06/26/2012US8207592 Integrated capacitor with array of crosses
06/26/2012US8207587 Magnetic sensor and manufacturing method therefor
06/26/2012US8207586 Substrate bonded MEMS sensor
06/26/2012US8207585 Method for producing a micromechanical component and mircomechanical component
06/26/2012US8207582 Semiconductor devices including dual gate structures
06/26/2012US8207580 Power integrated circuit device with incorporated sense FET
06/26/2012US8207578 Method of forming a region of graded doping concentration in a semiconductor device and related apparatus
06/26/2012US8207577 High-voltage transistor structure with reduced gate capacitance
06/26/2012US8207576 Pitch reduced patterns relative to photolithography features
06/26/2012US8207575 Semiconductor device and method of manufacturing the same
06/26/2012US8207574 Semiconductor device and method for manufacturing the same
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