Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2012
07/26/2012US20120187478 Semiconductor device
07/26/2012US20120187477 Super-junction trench mosfet with multiple trenched source-body contacts
07/26/2012US20120187476 Semiconductor device and method of manufacturing the same
07/26/2012US20120187475 Semiconductor device and manufacturing method thereof
07/26/2012US20120187474 Trench Power MOSFET With Reduced On-Resistance
07/26/2012US20120187473 Edge Termination With Improved Breakdown Voltage
07/26/2012US20120187472 Trench poly esd formation for trench mos and sgt
07/26/2012US20120187471 Methods of manufacturing a semiconductor device and a semiconductor memory device thereby
07/26/2012US20120187470 Gate structures
07/26/2012US20120187469 Method of manufacturing semiconductor storage device and semiconductor storage device
07/26/2012US20120187468 Metal control gate formation in non-volatile storage
07/26/2012US20120187467 Floating gates and methods of formation
07/26/2012US20120187465 Enhanced capacitance trench capacitor
07/26/2012US20120187460 Method for forming metal semiconductor alloys in contact holes and trenches
07/26/2012US20120187459 Semiconductor device including an epitaxy region
07/26/2012US20120187458 Asymmetric High-Voltage JFET and Manufacturing Process
07/26/2012US20120187457 Semiconductor device
07/26/2012US20120187456 Magnetic random access memory and manufacturing method thereof
07/26/2012US20120187454 Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the same
07/26/2012US20120187452 Semiconductor element
07/26/2012US20120187451 Semiconductor element
07/26/2012US20120187450 Sti silicon nitride cap for flat feol topology
07/26/2012US20120187422 Semiconductor substrate, method for producing semiconductor substrate, substrate for semiconductor growth, method for producing substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic device
07/26/2012US20120187421 Vertical junction field effect transistors and diodes having graded doped regions and methods of making
07/26/2012US20120187420 Structure and method to make replacement metal gate and contact metal
07/26/2012US20120187419 Production Method for a Unipolar Semiconductor Component and Semiconductor Device
07/26/2012US20120187418 Semiconductor structure and method for manufacturing the same
07/26/2012US20120187417 Semiconductor device
07/26/2012US20120187416 Semiconductor device and method of manufacturing semiconductor device
07/26/2012US20120187415 METHOD FOR CONDUCTIVITY CONTROL OF (Al,In,Ga,B)N
07/26/2012US20120187413 Nitride semiconductor device and method for manufacturing same
07/26/2012US20120187412 Gallium-Nitride-on-Handle Substrate Materials and Devices and Method of Manufacture
07/26/2012US20120187411 Semiconductor Device and Method for Manufacturing the Same
07/26/2012US20120187410 Semiconductor device and manufacturing method thereof
07/26/2012US20120187409 Hybrid Silicon Wafer
07/26/2012US20120187408 Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device
07/26/2012US20120187407 Thin film transistor and manufacturing method thereof
07/26/2012US20120187404 Display device and method of fabricating the same
07/26/2012US20120187399 Substrate for flexible device, thin film transistor substrate for flexible device, flexible device, substrate for thin film element, thin film element, thin film transistor, method for manufacturing substrate for thin film element, method for manufacturing thin film element, and method for manufacturing thin film transistor
07/26/2012US20120187397 Semiconductor device and manufacturing method thereof
07/26/2012US20120187396 Semiconductor device and manufacturing method thereof
07/26/2012US20120187395 Oxide semiconductor element and semiconductor device
07/26/2012US20120187376 Tunnel field effect transistor and method for manufacturing same
07/26/2012US20120187375 Deposition On A Nanowire Using Atomic Layer Deposition
07/26/2012US20120187374 Semiconductor Device
07/26/2012US20120187371 White Light Devices Using Non-polar or Semipolar Gallium Containing Materials and Phosphors
07/26/2012DE112010000953T5 Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung A method of manufacturing a silicon carbide semiconductor device
07/26/2012DE102011088624A1 Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device
07/26/2012DE102011009487A1 Asymmetrischer Hochvolt-JFET und Herstellungsverfahren Asymmetrical high-voltage JFET and manufacturing processes
07/26/2012DE102011003213A1 Halbleiterbauelement mit einer Vielzahl von FET-Zellen A semiconductor device having a plurality of FET cells
07/26/2012DE102007014962B4 Gateelektrodenstruktur, Mosfeldeffekttransistoren und Verfahren zu deren Herstellung Gate electrode structure, and method for their preparation Mosfeldeffekttransistoren
07/26/2012DE102006062914B3 Electronic component e.g. silicon controlled rectifier, manufacturing method, involves doping portion of body regions by introducing dopant atoms into portion through intermediate region formed between separate gate regions
07/26/2012CA2792551A1 Method for manufacturing silicon carbide semiconductor device
07/25/2012EP2479793A1 Method for manufacturing a field-effect device with low junction capacitance
07/25/2012EP2479792A1 Field-effect device provided with a slimmer counter-electrode and manufacturing method.
07/25/2012EP2479791A1 Photo-crosslinkable material for organic thin film transistor insulating layer
07/25/2012EP2479790A2 Nitride-based transistors and fabrication methods with an etch stop layer
07/25/2012EP2479785A1 Field-effect device provided with a barrier zone for localised dopant scattering and manufacturing method
07/25/2012EP2478563A1 Semiconductor device and method for manufacturing the same
07/25/2012EP2478562A1 Methods of building crystalline silicon solar cells for use in combinatorial screening
07/25/2012EP2478561A1 Pin diode with sige low contact resistance and method for forming the same
07/25/2012EP2478554A1 Transistor and display device
07/25/2012EP2477939A2 Room temperature quantum field effect transistor comprising a 2-dimensional quantum wire array based on ideally conducting molecules
07/25/2012EP2006894B1 Method for producing a semiconductor device
07/25/2012EP1618607B1 Semiconductor device comprising an ldmos field-effect transistor and method of operating the same
07/25/2012EP1264337B1 Method of manufacturing source/drain regions having a deep junction
07/25/2012CN202352679U Glass-passivated high-power diode
07/25/2012CN202352678U Flat-bottom junction vertical double-diffused metal oxide semiconductor field effect transistor
07/25/2012CN202352677U Four-quadrant three-terminal bipolar silicon-controlled switch
07/25/2012CN202352662U Plasma damage test structure based on MOS (Metal Oxide Semiconductor) capacitance
07/25/2012CN202352653U Minitype patch-type diode
07/25/2012CN1790740B Semiconductor device and method for forming grid structure
07/25/2012CN1541038B Flat panel display with improved white balance
07/25/2012CN102612753A Bidirectional switch
07/25/2012CN102612752A Optical and thermal energy crosslinkable insulating layer material for organic thin film transistor
07/25/2012CN102612751A Self-aligned graphene transistor
07/25/2012CN102612750A Vertical power transistor device, semiconductor die and method of manufacturing a vertical power transistor device
07/25/2012CN102612749A Semiconductor device
07/25/2012CN102612741A Semiconductor device
07/25/2012CN102612737A Drive current enhancement in tri-gate mosfets by introduction of compressive metal gate stress using ion implantation
07/25/2012CN102612736A Semiconductor device and method of producing same
07/25/2012CN102612714A Semiconductor device and driving method thereof
07/25/2012CN102612501A Sputtering target and thin film transistor equipped with same
07/25/2012CN102610660A Cascaded MIM (multifunctional interface module) capacitor structure and semiconductor apparatus
07/25/2012CN102610659A Voltage control variodenser and manufacturing method thereof
07/25/2012CN102610658A Barrier diode for input power protection
07/25/2012CN102610657A Clamping diode structure and manufacturing method thereof
07/25/2012CN102610656A High-voltage-resistance junction field effect transistor
07/25/2012CN102610655A Device with improved BE-SONOS structure and method for forming the same
07/25/2012CN102610654A Device with conical energy band silicon nitride layer SONOS (silicon oxide nitride oxide semiconductor) structure and high erasing speed
07/25/2012CN102610653A Nanocrystalline floating gate memory and manufacturing method of nanocrystalline floating gate memory
07/25/2012CN102610652A Metal oxide semiconductor structure and manufacturing method thereof
07/25/2012CN102610651A Polycrystalline thin film transistor
07/25/2012CN102610650A Polycrystalline thin film transistor
07/25/2012CN102610649A High-reliability LDMOS (laterally diffused metal oxide semiconductor) power device
07/25/2012CN102610648A Semiconductor device
07/25/2012CN102610647A Tunneling transistor with hetero-material grid dielectrics and forming method of tunneling transistor
07/25/2012CN102610646A Side wall cavity layer structure of semiconductor device and method for preparing side wall cavity layer structure
07/25/2012CN102610645A Tunnelling transistors
07/25/2012CN102610644A SOI (silicon on insulator) device for restraining current leakage of back gate arising from radiation and preparation method thereof
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