Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2012
08/02/2012DE102011003284A1 Leistungshalbleiterelement und Anordnung eines Leistungshalbleiterelements zu mindestens einer Solarzelle Power semiconductor element and arrangement of a power semiconductor element to at least one solar cell
08/02/2012DE102010043450B4 Verfahren zur Herstellung von Trench-Metalloxid-Halbleiter-Feldeffekttransistoren, Trench-MOSFETs und diese umfassende Leistungswandlersysteme A process for producing trench metal-oxide-semiconductor field-effect transistors, trench MOSFETs and this comprehensive power converter systems
08/02/2012DE102007033810B4 Teststruktur-Anordnung eines Halbleiterbauelements Test structure arrangement of a semiconductor device
08/02/2012DE102007013848B4 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same
08/01/2012EP2482325A2 Deep trench insulated gate bipolar transistor
08/01/2012EP2482324A2 Deep trench insulated gate bipolar transistor
08/01/2012EP2482323A2 VTS insulated gate bipolar transistor
08/01/2012EP2482322A2 VTS insulated gate bipolar transistor
08/01/2012EP2482321A2 Method of fabricating a deep trench insulated gate bipolar transistor
08/01/2012EP2482320A2 Method of fabricating a deep trench insulated gate bipolar transistor
08/01/2012EP2482319A2 Semiconductor devices and power conversion systems
08/01/2012EP2482315A1 Semiconductor element
08/01/2012EP2482313A1 Semiconductor device and method of manufacturing the same
08/01/2012EP2482308A2 Semiconductor device and manufacturing method thereof
08/01/2012EP2482307A1 Silicon carbide ingot, silicon carbide substrate, methods for manufacturing the ingot and the substrate, crucible, and semiconductor substrate
08/01/2012EP2481089A1 Semiconductor device and manufacturing method thereof
08/01/2012EP2481088A1 Passivated nanoparticles
08/01/2012EP2481087A1 Double trench rectifier
08/01/2012EP1820211B1 Gate engineered fermi-fets with strained silicon channel and manufacturing method
08/01/2012EP1817798B1 Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same
08/01/2012EP1393352B1 Semiconductor device, semiconductor layer and production method thereof
08/01/2012CN202363465U Bidirectional trigger diode chip with single table surface
08/01/2012CN202363464U Bidirectional high-voltage MOS (Metal Oxide Semiconductor) transistor in BCD (Bipolar-CMOS-DMOS) process
08/01/2012CN202363463U Novel Schottky flip packaging chip
08/01/2012CN102623515A Mos varactor structure and methods
08/01/2012CN102623514A Plugging type radiating photovoltaic assembly diode capable of preventing mistaken installing and terminal box thereof
08/01/2012CN102623513A Diode structures with controlled injection efficiency for fast switching
08/01/2012CN102623512A Fast soft recovery diode and method for producing same
08/01/2012CN102623511A Power diode
08/01/2012CN102623510A Thin film transistor with tantalum oxide insulation layer and preparation method of thin film transistor
08/01/2012CN102623509A High-voltage switch device and manufacturing method thereof
08/01/2012CN102623508A Graphene field effect transistor and preparation method thereof
08/01/2012CN102623507A Under-gate body leading-out high-reliable lateral double diffused metal oxide semiconductor (LDMOS) power device
08/01/2012CN102623506A High-reliability silicon on insulator (SOI) laterally diffused metal oxide semiconductor (LDMOS) power element
08/01/2012CN102623505A Vertical dual-gate-based anti-radiation transistor and manufacturing method thereof
08/01/2012CN102623504A Super junction semiconductor device with novel terminal structure and manufacture method thereof
08/01/2012CN102623503A Semiconductor device
08/01/2012CN102623502A Common-source operational amplifier and manufacture method for same
08/01/2012CN102623501A Shielded gate trench MOSFET with increased source-metal contact
08/01/2012CN102623500A Trench power MOSFET with reduced on-resistance
08/01/2012CN102623499A Semiconductor device
08/01/2012CN102623498A Semiconductor device
08/01/2012CN102623497A Double diffused metal oxide semiconductor device and manufacturing method thereof
08/01/2012CN102623496A Matrix type mos field effect transistor
08/01/2012CN102623495A Tunneling field effect transistor with multi-doping pocket structure and manufacturing method for tunneling field effect transistor
08/01/2012CN102623494A Nitride semiconductor device and method for manufacturing same
08/01/2012CN102623493A 半导体元件 Semiconductor components
08/01/2012CN102623492A MOS (Metal Oxide Semiconductor) field control thyristor
08/01/2012CN102623491A High-voltage withstanding device in bipolar low-voltage process and manufacturing method thereof
08/01/2012CN102623490A Low gate-leakage structure and method for gallium nitride enhancement mode transistor
08/01/2012CN102623489A Semiconductor device and method of manufacturing the same
08/01/2012CN102623488A HV interconnection solution using floating conductors
08/01/2012CN102623487A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/01/2012CN102623459A Thin-film transistor memory and preparation method thereof
08/01/2012CN102623458A Vertical channel type nonvolatile memory device and method for fabricating the same
08/01/2012CN102623345A Embedded multi-N-island P-channel hyperconjugation device and preparation method thereof
08/01/2012CN102623343A Side wall hollow layer structure for semiconductor device and preparation method for side wall hollow layer structure
08/01/2012CN102623342A Semiconductor devices having encapsulated stressor regions and related fabrication methods
08/01/2012CN102623337A Transistor and making method thereof
08/01/2012CN102623318A Semiconductor device and manufacturing method thereof
08/01/2012CN102623317A Semiconductor device including an epitaxy region
08/01/2012CN102623314A Source-drain lightly-doping method, semiconductor device and manufacturing method thereof
08/01/2012CN102623313A Ring ion injection method, semiconductor device and manufacture method thereof
08/01/2012CN102623304A Wafer suitable for nanometer technology and method for manufacturing the same
08/01/2012CN102110709B Parasitic vertical PNP triode in bipolar complementary metal oxide semiconductor (BiCMOS) process and manufacturing method thereof
08/01/2012CN102104062B Bipolar transistor
08/01/2012CN102054861B Bidirectional thyristor and electrostatic protection circuit
08/01/2012CN101901813B Semiconductor memory with vertical structure and manufacturing method thereof
08/01/2012CN101295734B Semiconductor device and method for manufacturing the same
08/01/2012CN101286510B Un-assisted, low-trigger and high-holding voltage SCR
07/2012
07/31/2012US8234606 Metal wiring structure for integration with through substrate vias
07/31/2012US8234594 Redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same
07/31/2012US8233952 Superconducting magnet
07/31/2012US8233120 Liquid crystal display device with light-shielding color filter pattern and method for fabricating the same
07/31/2012US8233065 Charge detection device and charge detection method, solid-state imaging device and driving method thereof, and imaging device
07/31/2012US8232657 Packaged semiconductor assemblies and methods for manufacturing such assemblies
07/31/2012US8232654 Semiconductor package through-electrode suitable for a stacked semiconductor package and semiconductor package having the same
07/31/2012US8232653 Wiring structures
07/31/2012US8232652 Semiconductor device
07/31/2012US8232649 Structure for interconnect structure containing various capping materials for electrical fuse and other related applications
07/31/2012US8232644 Wafer level package having a stress relief spacer and manufacturing method thereof
07/31/2012US8232641 Wiring substrate and semiconductor device having connection pads formed in non-solder mask defined structure
07/31/2012US8232640 Device, method of manufacturing device, board, method of manufacturing board, mounting structure, mounting method, LED display, LED backlight and electronic device
07/31/2012US8232631 Semiconductor packing having offset stack structure
07/31/2012US8232627 Integrated circuit device with series-connected field effect transistors and integrated voltage equalization and method of forming the device
07/31/2012US8232626 Via and method of via forming and method of via filling
07/31/2012US8232625 ESD network circuit with a through wafer via structure and a method of manufacture
07/31/2012US8232624 Semiconductor structure having varactor with parallel DC path adjacent thereto
07/31/2012US8232618 Semiconductor structure having a contact-level air gap within the interlayer dielectrics above a semiconductor device and a method of forming the semiconductor structure using a self-assembly approach
07/31/2012US8232617 Flexible lateral pin diodes and three-dimensional arrays and imaging devices made therefrom
07/31/2012US8232615 Packaged device with acoustic transducer and amplifier
07/31/2012US8232611 High quality gate dielectric for semiconductor devices and method of formation thereof
07/31/2012US8232609 Semiconductor device including field effect transistor with reduced electric field concentration
07/31/2012US8232606 High-K dielectric and metal gate stack with minimal overlap with isolation region
07/31/2012US8232605 Method for gate leakage reduction and Vt shift control and complementary metal-oxide-semiconductor device
07/31/2012US8232604 Transistor with high-k dielectric sidewall spacer
07/31/2012US8232598 Display device and method for manufacturing the same
07/31/2012US8232596 Semiconductor structure and fabrication method thereof
07/31/2012US8232595 Semiconductor device including a power MISFET and method of manufacturing the same
07/31/2012US8232594 Semiconductor device and method of manufacturing the same
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