Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2012
07/10/2012US8217395 Semiconductor device
07/10/2012US8217384 Device and method for manipulating direction of motion of current carriers
07/10/2012US8217383 High hole mobility p-channel Ge transistor structure on Si substrate
07/10/2012US8217382 Optical-powered flexible photonic bandgap sensor device
07/10/2012US8217381 Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
07/10/2012US8217379 Arsenic-containing variable resistance materials
07/10/2012US8216947 Methods of forming fine patterns in integrated circuit devices
07/10/2012US8216934 Semiconductor device suitable for a stacked structure
07/10/2012US8216925 Transistor structure having a trench drain
07/10/2012US8216907 Process to fabricate a metal high-K transistor having first and second silicon sidewalls for reduced parasitic capacitance
07/10/2012US8216491 Thin film production
07/10/2012CA2381530C Bipolar mosfet device
07/05/2012WO2012092193A2 Semiconductor devices with minimized current flow differences and methods of same
07/05/2012WO2012092038A2 A method to reduce contact resistance of n-channel transistors by using a iii-v semiconductor interlayer in source and drain
07/05/2012WO2012091498A1 Flexible/stretchable semiconductor device comprising a graphene electrode, method for reducing contact resistance between a semiconductor layer and a graphene electrode, and graphene interconnector
07/05/2012WO2012091297A1 Thin-film transistor and method for manufacturing same
07/05/2012WO2012091126A1 Oxide for semiconductor layer of thin film transistor, sputtering target, and thin-film transistor
07/05/2012WO2012091042A1 Light emitting element, light emitting element unit, and light emitting element package
07/05/2012WO2012090974A1 Semiconductor device and method for manufacturing the same
07/05/2012WO2012090973A1 Semiconductor device and manufacturing method thereof
07/05/2012WO2012090913A1 Method for producing organic transistors
07/05/2012WO2012090891A1 Field-effect transistor and method for manufacturing same
07/05/2012WO2012090861A1 Semiconductor device
07/05/2012WO2012090819A1 Method for manufacturing microcrystalline silicon film, microcrystalline silicon film, electric element, and display device
07/05/2012WO2012090818A1 Nitride semiconductor structure, nitride semiconductor light-emitting element, nitride semiconductor transistor element, method for manufacturing nitride semiconductor structure, and method for manufacturing nitride semiconductor element
07/05/2012WO2012090799A1 Semiconductor device and method for manufacturing the same
07/05/2012WO2012090794A1 Semiconductor device and method for manufacturing same
07/05/2012WO2012090738A1 Method for manufacturing semiconductor device, substrate treatment method, and substrate treatment device
07/05/2012WO2012090572A1 Silicon carbide substrate, semiconductor device, method for producing silicon carbide substrate, and method for producing semiconductor device
07/05/2012WO2012090490A1 Laminate structure including oxide semiconductor thin film layer, and thin film transistor
07/05/2012WO2012090483A1 Charge-trap type storage device and method of manufacturing thereof
07/05/2012WO2012090482A1 Method of manufacturing semiconductor device, and device
07/05/2012WO2012090462A1 Organic semiconductor material, coating liquid containing the material, and organic thin film transistor
07/05/2012WO2012090432A1 Active matrix substrate, method for manufacturing same, and display panel
07/05/2012WO2012089315A1 A method for fabricating a semiconductor device
07/05/2012WO2012089314A2 A method for fabricating a semiconductor device
07/05/2012WO2012088808A1 Semiconductor device and manufacturing method thereof
07/05/2012WO2012088797A1 Semiconductor structure and method for manufacturing the same
07/05/2012WO2012088795A1 Semiconductor device and manufacturing method thereof
07/05/2012WO2012088774A1 Soi type p-ldmos
07/05/2012WO2012088730A1 Transistor and manufacturing method thereof
07/05/2012WO2012068207A3 Vertical dmos field -effect transistor and method of making the same
07/05/2012WO2012058307A3 Laterally diffused mos transistor with reduced gate charge
07/05/2012WO2012054686A3 Trench dmos device with improved termination structure for high voltage applications
07/05/2012WO2011063292A3 Semiconductor device having strain material
07/05/2012US20120171833 Method for manufacturing semiconductor device
07/05/2012US20120171828 Method of Forming a FET Having Ultra-low On-resistance and Low Gate Charge
07/05/2012US20120171794 Polysilicon thin film transistor device and method of fabricating the same
07/05/2012US20120170358 MRAM cell structure
07/05/2012US20120170163 Barrier diode for input power protection
07/05/2012US20120169794 Pixel circuit, display device, and method of driving pixel circuit
07/05/2012US20120169262 Semiconductor device, method of manufacturing the same, and power module
07/05/2012US20120168915 Reliable interconnect integration scheme
07/05/2012US20120168914 Epitaxial structure and method for making the same
07/05/2012US20120168913 Finfet
07/05/2012US20120168912 Method for quantitatively evaluating concentration of atomic vacancies existing in silicon wafer, method for manufacturing silicon wafer, and silicon wafer manufactured by the method for manufacturing silicon wafer
07/05/2012US20120168911 Silicon wafer strength enhancement
07/05/2012US20120168910 Multi-nary group ib and via based semiconductor
07/05/2012US20120168909 Radiation hardened bipolar injunction transistor
07/05/2012US20120168908 Spacer formation in the fabrication of planar bipolar transistors
07/05/2012US20120168907 Flat response device structures for bipolar junction transistors
07/05/2012US20120168906 ESD Protection Device with Tunable Design Windows
07/05/2012US20120168905 Capacitor of nonvolatile memory device
07/05/2012US20120168904 Semiconductor Device Including Insulating Layer of Cubic System or Tetragonal System
07/05/2012US20120168903 Semiconductor Constructions Containing Tubular Capacitor Storage Nodes, And Retaining Structures Along Portions Of The Tubular Capacitor Storage Nodes
07/05/2012US20120168902 Method for fabricating a capacitor and capacitor structure thereof
07/05/2012US20120168899 Semiconductor device and method for fabricating the same
07/05/2012US20120168898 Methods of forming single crystal silicon structures and semiconductor device structures including single crystal silicon structures
07/05/2012US20120168895 Modifying growth rate of a device layer
07/05/2012US20120168893 Mesa edge shielding trench Schottky rectifier and method of manufacture thereof
07/05/2012US20120168887 Magnetic Memory Devices and Methods of Forming the Same
07/05/2012US20120168886 Method for fabricating a microswitch actuatable by a magnetic field
07/05/2012US20120168885 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
07/05/2012US20120168884 Pressure sensor and method of packaging same
07/05/2012US20120168883 Rf mems switch and fabricating method thereof
07/05/2012US20120168881 Semiconductor device and method for manufacturing the same
07/05/2012US20120168880 Method of Fabricating Semiconductor Device
07/05/2012US20120168879 Transistor and method for forming the same
07/05/2012US20120168878 field effect transistor having ohmic body contact(s), an integrated circuit structure incorporating stacked field effect transistors with such ohmic body contacts and associated methods
07/05/2012US20120168877 Method to reduce contact resistance of n-channel transistors by using a iii-v semiconductor interlayer in source and drain
07/05/2012US20120168874 Structure and method to improve threshold voltage of mosfets including a high k dielectric
07/05/2012US20120168870 Semiconductor device for preventing plasma induced damage and layout thereof
07/05/2012US20120168869 Semiconductor device, and its manufacturing method
07/05/2012US20120168868 Multi-gate field-effect transistor with enhanced and adaptable low-frequency noise
07/05/2012US20120168865 Transistor and Method for Manufacturing the Same
07/05/2012US20120168864 Self-aligned well implant for improving short channel effects control, parasitic capacitance, and junction leakage
07/05/2012US20120168863 Semiconductor Structure and Method for Manufacturing the Same
07/05/2012US20120168862 High-voltage metal-oxide-semiconductor device
07/05/2012US20120168861 Power transistor with increased avalanche current and energy rating
07/05/2012US20120168860 Transistor and method for forming the same
07/05/2012US20120168859 Vertical transistor manufacturing method and vertical transistor
07/05/2012US20120168858 Non-volatile memory device and method of fabricating the same
07/05/2012US20120168857 Memory structure having a floating body and method for fabricating the same
07/05/2012US20120168856 Trench-type semiconductor power devices
07/05/2012US20120168855 Nanowire transistor with surrounding gate
07/05/2012US20120168854 Semiconductor device and metod for forming the same
07/05/2012US20120168853 Semiconductor non-volatile memory device
07/05/2012US20120168852 Nonvolatile memory devices
07/05/2012US20120168850 Nonvolatile memory device and method for fabricating the same
07/05/2012US20120168849 Non-volatile memory device and method for fabricating the same
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