Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2012
07/12/2012US20120175706 Chip-Exposed Semiconductor Device
07/12/2012US20120175705 Semiconductor device and method of manufacturing the same
07/12/2012US20120175703 Semiconductor device
07/12/2012US20120175702 Metal-oxide-semiconductor device having trenched diffusion region and method of forming same
07/12/2012US20120175700 Trench mos rectifier
07/12/2012US20120175698 Semiconductor device
07/12/2012US20120175697 Multi-state non-volatile memory cell integration and method of operation
07/12/2012US20120175696 Multilayer floating gate field-effect transistor (fet) devices and related methods
07/12/2012US20120175695 Semiconductor storage device and manufacturing method thereof
07/12/2012US20120175692 Interconnection Wiring Structure of a Semiconductor Device
07/12/2012US20120175689 Hydrogen passivation of integrated circuits
07/12/2012US20120175688 Semiconductor Package with Reduced On-Resistance and Top Metal Spreading Resistance with Application to Power Transistor Packaging
07/12/2012US20120175687 System and Method for Manufacturing a Temperature Difference Sensor
07/12/2012US20120175684 Transistor including reduced channel length
07/12/2012US20120175682 Ohmic contact to semiconductor device
07/12/2012US20120175680 Enhancement mode gallium nitride power devices
07/12/2012US20120175679 Single structure cascode device
07/12/2012US20120175678 Replacement spacer for tunnel fets
07/12/2012US20120175675 Semiconductor device and method for manufacturing the same
07/12/2012US20120175674 Power switches for aircraft
07/12/2012US20120175672 Esd protection circuit
07/12/2012US20120175668 Electronic Component and Electrical Contact
07/12/2012US20120175641 Diamond n-type semiconductor, method of manufacturing the same, semiconductor device, and electron emitting device
07/12/2012US20120175640 Semiconductor devices having tensile and/or compressive stress and methods of manufacturing
07/12/2012US20120175639 Tantalum carbide, method for producing tantalum carbide, tantalum carbide wiring and tantalum carbide electrode
07/12/2012US20120175638 Semiconductor device
07/12/2012US20120175637 Semiconductor device and method of manufacturing same
07/12/2012US20120175635 Semiconductor Device Arrangement with a First Semiconductor Device and with a Plurality of Second Semiconductor Devices
07/12/2012US20120175634 Transistor Arrangement with a First Transistor and with a Plurality of Second Transistors
07/12/2012US20120175633 Nitride semiconductor substrate
07/12/2012US20120175631 ENHANCEMENT MODE GaN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FABRICATING THE SAME
07/12/2012US20120175629 Semiconductor epitaxial structure
07/12/2012US20120175627 Dual Gate Layout for Thin Film Transistor
07/12/2012US20120175625 Method for manufacturing semiconductor device
07/12/2012US20120175624 Implementing vertical signal repeater transistors utilizing wire vias as gate nodes
07/12/2012US20120175623 Transistor including multiple reentrant profiles
07/12/2012US20120175622 Method for producing a silicon ingot
07/12/2012US20120175618 Radiation imaging device, radiation imaging display system, and transistor
07/12/2012US20120175616 Thin Film Field Effect Transistor with Dual Semiconductor Layers
07/12/2012US20120175615 Organic Light-Emitting Display and Method of Manufacturing the Same
07/12/2012US20120175614 Transistor including multi-layer reentrant profile
07/12/2012US20120175613 Polycrystalline silicon mass and process for producing polycrystalline silicon mass
07/12/2012US20120175611 Method of manufacturing thin film transistor, thin film transistor, and display unit
07/12/2012US20120175610 Manufacturing method of semiconductor device
07/12/2012US20120175609 Semiconductor device and manufacturing method thereof
07/12/2012US20120175608 Semiconductor device and manufacturing method thereof
07/12/2012US20120175606 Epitaxial structure
07/12/2012US20120175595 Graphene Electronic Device And Method Of Fabricating The Same
07/12/2012US20120175594 Graphene Devices with Local Dual Gates
07/12/2012US20120175593 Nanograin Material and Photoelectric Conversion Device
07/12/2012US20120175589 Nitride semiconductor device and method of producing the same
07/12/2012US20120175585 Cage nanostructures and prepartion thereof
07/12/2012US20120175581 Switching device and semiconductor memory device including the same
07/12/2012US20120174972 Transparent conductive film and a device with the same
07/12/2012DE112010003214T5 Epitaxiesubstrat für ein halbleiterelement, verfahrenzur herstellung eines epitaxiesubstrats für einhalbleiterelement, und halbleiterelement Epitaxial substrate for semiconductor element, verfahrenzur making an epitaxial substrate for a half head of element and semiconductor element
07/12/2012DE102012200056A1 Halbleitervorrichtung und Verfahren zur Herstellung hiervon A semiconductor device and method thereof for the manufacture
07/12/2012DE102011056317A1 Halbleiter-ESD-Schaltung und Verfahren Semiconductor ESD circuit and method
07/12/2012DE102005029266B4 Aktiv-Matrix-Flüssigkristalldisplay sowie zugehöriges Herstellungsverfahren Active-matrix liquid-crystal display and manufacturing method thereof
07/12/2012DE102004010670B4 Halbleiterdrucksensor mit einem Diaphragma A semiconductor pressure sensor comprising a diaphragm
07/12/2012CA2789372A1 Method of manufacturing semiconductor device
07/11/2012EP2475003A1 Thin film transistor array arrangement, organic light emitting display device having the same, and manufacturing method thereof
07/11/2012EP2474039A2 Method of forming a semiconductor device
07/11/2012EP2474038A1 Fin-type device system and method
07/11/2012EP2474037A2 Methods and systems for making electrodes having at least one functional gradient therein and devices resulting therefrom
07/11/2012EP2474032A1 Semiconductor device
07/11/2012EP2255387B1 Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
07/11/2012EP2033226B1 Schottky diode with incorporated pn- junctions
07/11/2012DE202007019433U1 Licht emittierende Vorrichtung mit vertikaler Struktur, und Baugruppe hiervon Light emitting device having a vertical structure, and assembly thereof
07/11/2012CN202334359U 变换器 Converters
07/11/2012CN202332864U 一种整流半导体器件 One kind of rectifying semiconductor devices
07/11/2012CN202332863U 薄膜场效应晶体管 Tffet
07/11/2012CN202332862U 用于静电保护的多指状nmos器件 ESD protection for multi-finger devices nmos
07/11/2012CN202332861U 一种抗总剂量辐射效应的大头条形栅mos管版图加固结构 An anti-total dose radiation effects of the bulk of the strip layout gate mos tube reinforcement structure
07/11/2012CN202332860U 一种大功率晶闸管 One kind of power thyristor
07/11/2012CN202332859U 一种沟槽栅结型场效应晶体管 One kind of a trench-gate junction type field effect transistor
07/11/2012CN202332858U 一种金属氧化物半导体场效应晶体管 Metal oxide semiconductor field effect transistor
07/11/2012CN202332857U 衬底、外延片及半导体器件 Substrates, epitaxial wafers and semiconductor devices
07/11/2012CN202332856U 新型衬底、外延片及半导体器件 The new substrate, wafer and semiconductor devices
07/11/2012CN202332844U 电力电子模块专用方型整流芯片 Power electronics module dedicated rectangular chip rectifier
07/11/2012CN1909249B Semiconductor device with thin-film transistors and method of fabricating the same
07/11/2012CN1883047B Apparatus and method for split gate NROM memory
07/11/2012CN1637551B Transflective type liquid crystal display device and method for fabricating the same
07/11/2012CN102577653A Cold plate with pins
07/11/2012CN102576800A Magnetostrictive film, magnetostrictive element, torque sensor, force sensor, pressure sensor, and process for production of magnetostrictive film
07/11/2012CN102576740A Surge protection device
07/11/2012CN102576739A Thin film transistor and manufacturing method for same, semiconductor device and manufacturing method for same, and display device
07/11/2012CN102576738A 逻辑电路和半导体器件 A logic circuit and a semiconductor device
07/11/2012CN102576737A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
07/11/2012CN102576736A Semiconductor device and method for manufacturing the same
07/11/2012CN102576735A Substrate for flexible device, thin film transistor substrate for flexible device, flexible device, substrate for thin film element, thin film element, thin film transistor, method for manufacturing substrate for thin film element, method for manufac
07/11/2012CN102576734A Display device and electronic device including display device
07/11/2012CN102576733A Thin-film transistor, manufacturing method therefor, and liquid-crystal display device
07/11/2012CN102576732A Semiconductor device and method for manufacturing semiconductor device
07/11/2012CN102576731A High-drive current mosfet
07/11/2012CN102576730A Fin-type device system and method
07/11/2012CN102576729A Low ohmic contacts containing germanium for gallium nitride or other nitride-based power devices
07/11/2012CN102576728A Power semiconductor device
07/11/2012CN102576727A Gated III-V semiconductor structure and method
07/11/2012CN102576726A Tunnel field effect transistor and method for manufacturing same
07/11/2012CN102576725A Method and installation for producing a semiconductor device, and semiconductor device
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