Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2012
07/05/2012US20120168848 Non-volatile memory device and method for fabricating the same
07/05/2012US20120168847 Memory with extended charge trapping layer
07/05/2012US20120168846 Nonvolatile semiconductor memory device having element isolating region of trench type
07/05/2012US20120168845 Nonvolatile semiconductor memory device
07/05/2012US20120168844 Nonvolatile semiconductor memory device
07/05/2012US20120168843 Semiconductor device and fabrication method thereof
07/05/2012US20120168841 Multiple Patterning Method
07/05/2012US20120168838 Semiconductor device and method of manufacturing the same
07/05/2012US20120168834 Field effect transistor (fet) and method of forming the fet without damaging the wafer surface
07/05/2012US20120168833 Formation of finfet gate spacer
07/05/2012US20120168832 Asymmetric field effect transistor structure and method
07/05/2012US20120168831 Non-volatile memory device and method for fabricating the same
07/05/2012US20120168830 Semiconductor device and method of manufacturing the same
07/05/2012US20120168829 Mos transistor and method for forming the same
07/05/2012US20120168828 Semiconductor device having a triple gate transistor and method for manufacturing the same
07/05/2012US20120168827 Semiconductor device having a triple gate transistor and method for manufacturing the same
07/05/2012US20120168823 Semiconductor device and method for manufacturing the same
07/05/2012US20120168822 Semiconductor device and fabrication method of the semiconductor device
07/05/2012US20120168821 Semiconductor device and fabrication method thereof
07/05/2012US20120168820 Junction field effect transistor structure with p-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure
07/05/2012US20120168819 Semiconductor pillar power MOS
07/05/2012US20120168818 Method for forming semiconductor device structure and semiconductor device
07/05/2012US20120168817 LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (LEDMOSFET) HAVING A HIGH DRAIN-TO-BODY BREAKDOWN VOLTAGE (Vb), A METHOD OF FORMING AN LEDMOSFET, AND A SILICON-CONTROLLED RECTIFIER (SCR) INCORPORATING A COMPLEMENTARY PAIR OF LEDMOSFETS
07/05/2012US20120168816 Light emitting semiconductor device
07/05/2012US20120168811 Nitride-type semiconductor element and process for production thereof
07/05/2012US20120168801 Light emitting device and package structure thereof
07/05/2012US20120168775 Stress enhanced transistor devices and methods of making
07/05/2012US20120168774 Silicon carbide substrate and method for manufacturing same
07/05/2012US20120168773 Semiconductor-on-diamond devices and associated methods
07/05/2012US20120168772 Passivation of aluminum nitride substrates
07/05/2012US20120168771 Semiconductor element, hemt element, and method of manufacturing semiconductor element
07/05/2012US20120168770 Heat dissipation structure of chip
07/05/2012US20120168767 Semiconductor device
07/05/2012US20120168766 Lateral extended drain metal oxide semiconductor field effect transistor (ledmosfet) with tapered dielectric plates to achieve a high drain-to-body breakdown voltage, a method of forming the transistor and a program storage device for designing the transistor
07/05/2012US20120168765 Flexible Substrate and Display Device Including the Flexible Substrate
07/05/2012US20120168763 Semiconductor Device and Method for Fabricating the Same
07/05/2012US20120168762 Active matrix substrate and active matrix display device
07/05/2012US20120168761 Active matrix organic light emitting diode and method for manufacturing the same
07/05/2012US20120168757 Transistors, Methods Of Manufacturing The Same And Electronic Devices Including Transistors
07/05/2012US20120168756 Transistor, Method Of Manufacturing The Same, And Electronic Device Including The Transistor
07/05/2012US20120168755 Transparent Electrode and Organic Light Emitting Diode Device Including the Transparent Electrode and Method of Manufacturing the Same
07/05/2012US20120168754 Thin film metal-dielectric-metal transistor
07/05/2012US20120168750 Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus
07/05/2012US20120168749 Display apparatus using oxide semiconductor and production thereof
07/05/2012US20120168748 Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
07/05/2012US20120168747 Composition for oxide thin film, preparation method of the composition, methods for forming the oxide thin film using the composition, and electronic device using the composition
07/05/2012US20120168746 Thin film transistor susbtrate including oxide semiconductor
07/05/2012US20120168744 Self-aligned metal oxide tft with reduced number of masks
07/05/2012US20120168743 Thin film transistor and fabricating method thereof
07/05/2012US20120168742 Barium copper sulfur fluoride transparent conductive thin films and bulk material
07/05/2012US20120168724 Transfer-free batch fabrication of single layer graphene devices
07/05/2012US20120168723 Electronic devices including graphene and methods of forming the same
07/05/2012US20120168722 Graphene Electronic Device Including A Plurality Of Graphene Channel Layers
07/05/2012US20120168721 Graphene formation on dielectrics and electronic devices formed therefrom
07/05/2012US20120168719 Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same
07/05/2012US20120168713 Method for manufacturing a silicon nanowire array using a porous metal film
07/05/2012US20120168711 Narrow-Waist Nanowire Transistor with Wide Aspect Ratio Ends
07/05/2012US20120168710 Growth and Transfer of Monolithic Horizontal Nanowire Superstructures onto Flexible Substrates
07/05/2012US20120168704 Method of etching a programmable memory microelectronic device
07/05/2012DE112009005069T5 Leistungshalbleitervorrichtung und verfahren zum herstellen einer leistungshalbleitervorrichtung Power semiconductor device and method of manufacturing a semiconductor device performance
07/05/2012DE112006001844B4 Verfahren zum Herstellen einer Elektronikkomponente und Elektronikkomponente A method of manufacturing an electronic component and electronic component
07/05/2012DE102011089684A1 Semiconductor device of display driver circuit for display apparatus, has N-type guard-ring region which is positioned between well regions to be separated by predetermined distance from well regions
07/05/2012DE102011088717A1 FINFET mit erhöhter Effizienz FinFET with increased efficiency
07/05/2012DE102011086761A1 Halbleitervorrichtung Semiconductor device
07/05/2012DE102011007988A1 Electrical energy storage device of high energy density for e.g. vehicles, produces electric field effects by valency change one of components of compound semiconductors under influence of loading process
07/05/2012DE102011002468A1 Method for manufacturing silicon carbide semiconductor structure of n-type vertical MOSFET used as switches, involves performing ion implantation at specified angle with respect to surface of silicon carbide layer after forming mask layer
07/05/2012DE102011002457A1 Mikromechanische Mikrofoneinrichtung und Verfahren zum Herstellen einer mikromechanischen Mikrofoneinrichtung Micromechanical microphone device and method for fabricating a micromechanical microphone means
07/04/2012EP2472588A1 Semiconductor device and method for manufacturing same
07/04/2012EP2472587A1 Nonplanar device with stress incorporation layer and method of fabrication
07/04/2012EP2472586A1 Thin Film Metal-Dielectric-Metal Transistor
07/04/2012EP2472585A1 Tunnel field effect transistor and method for manufacturing same
07/04/2012EP2472584A2 Semiconductor device
07/04/2012EP2472573A1 Vertical transistor manufacturing method and vertical transistor
07/04/2012EP2472572A1 Radiation hardened bipolar junction transistor
07/04/2012EP2472570A2 Nonvolatile memories with shaped floating gates
07/04/2012EP2472567A2 Semiconductor layer
07/04/2012EP2471796A1 Novel adduct compound, methods for purification and preparation of fused polycyclic aromatic compound, solution for formation of organic semiconductor film, and novel -diketone compound
07/04/2012EP2471778A1 Perylene tetracarboxydiimide derivative
07/04/2012EP2471102A2 Super junction trench power mosfet device fabrication
07/04/2012EP2471101A2 Super junction trench power mosfet devices
07/04/2012EP2471100A2 Semiconductor devices with field plates
07/04/2012EP2471089A1 Method for determining the structure of a transistor
07/04/2012EP1368835B1 Monomolecular electronic device
07/04/2012CN202309051U 一种耗尽型pHEMT芯片的ESD保护电路 One kind of depletion-mode pHEMT chip ESD protection circuit
07/04/2012CN202307906U Metal-insulating layer-metal (MIM) structure device for testing SiNx insulating layer
07/04/2012CN202307905U 具有高反向阻断性能肖特基二极管 With high performance reverse-blocking Schottky diode
07/04/2012CN202307904U Improved structure of diode
07/04/2012CN202307903U 一种无外延层的rf-ldmos器件结构 A non-epitaxial layer, the device structure rf-ldmos
07/04/2012CN202307902U 超结纵向双扩散金属氧化物场效应晶体管终端结构 Superjunction longitudinal double diffused metal oxide field effect transistor terminal structure
07/04/2012CN202307901U 一种带引线框架的三极管 A transistor with a lead frame
07/04/2012CN202307900U 肖特基二极管结构 Schottky diode structure
07/04/2012CN202307893U Array base plate and display panel using same
07/04/2012CN202307873U 薄框架三极管 Thin frame triode
07/04/2012CN202307871U 封装的圆柱形功率半导体器件和压力接触装置 Cylindrical power semiconductor device package and a pressure contact means
07/04/2012CN1983633B High voltage semiconductor components and producing method thereof
07/04/2012CN1973375B Method of separating layers of material using laser beam
07/04/2012CN1967877B Thin film transistor and method of fabricating the same
07/04/2012CN1957476B Planar dual gate semiconductor device
07/04/2012CN1926834B Accelerated TCP (transport control protocol) stack processing
07/04/2012CN1894771B Non-polarity (Al, B, Inc, Ga) N Quantum pit
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