Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2012
07/18/2012CN102598229A Bi-layer nfet embedded stressor element and integration to enhance drive current
07/18/2012CN102598213A Silicon carbide substrate manufacturing method and manufacturing device
07/18/2012CN102598211A Method for manufacturing composite substrate having silicon carbide substrate
07/18/2012CN102598095A Display device and electronic device including the same
07/18/2012CN102597046A Polymeric compound and electronic element
07/18/2012CN102593272A Epitaxial structure and preparation method thereof
07/18/2012CN102593191A Oxide semiconductor heterostructure modulated by biasing electric field, preparing method and device thereof
07/18/2012CN102593190A Diode
07/18/2012CN102593189A Thin film transistor
07/18/2012CN102593188A 反相器 Inverters
07/18/2012CN102593187A Semiconductor device and manufacturing method thereof
07/18/2012CN102593186A Manufacturing method of semiconductor device
07/18/2012CN102593185A Method for manufacturing semiconductor device
07/18/2012CN102593184A Film transistor and manufacturing method thereof
07/18/2012CN102593183A Thin film transistor structure and manufacturing method thereof
07/18/2012CN102593182A Thin film transistor structure and manufacturing method thereof
07/18/2012CN102593181A Silicon-on-insulator (SOI) underlay-based high-voltage metal oxide semiconductor tube and manufacturing method
07/18/2012CN102593180A Tunneling transistor with heterogeneous gate dielectric and forming method for tunneling transistor
07/18/2012CN102593179A MOS (metal oxide semiconductor) transistor and manufacturing method thereof
07/18/2012CN102593178A Semiconductor device with super node structure and manufacturing method thereof
07/18/2012CN102593177A Tunneling transistor with horizontal quasi coaxial cable structure and forming method thereof
07/18/2012CN102593176A Protection element and semiconductor device having the protection element
07/18/2012CN102593175A Trench metal oxide semiconductor (MOS) device with reinforced grid bus and production method thereof
07/18/2012CN102593174A Semi-conductor device and manufacturing method thereof
07/18/2012CN102593173A Semi-conductor device and manufacturing method thereof
07/18/2012CN102593172A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing
07/18/2012CN102593171A RF (Radio Frequency) lateral diffusion P-type MOS (Metal Oxide Semiconductor) transistor and manufacturing method thereof
07/18/2012CN102593170A Radio frequency LDMOS (Lateral-Double-diffused Metal Oxide Semiconductor) transistor structure based on SOI (Silicon on Insulator)
07/18/2012CN102593169A Carbon-based field effect transistor and preparation method thereof
07/18/2012CN102593168A Semiconductor device and a reverse conducting IGBT
07/18/2012CN102593167A Semiconductor devices and power conversion systems
07/18/2012CN102593166A Insulated gate bipolar transistor having high operation reaction speed
07/18/2012CN102593165A Silicon-germanium heterojunction bipolar transistor and manufacturing method thereof
07/18/2012CN102593164A Radiation imaging device, radiation imaging display system, and transistor
07/18/2012CN102593163A High voltage vertical double-diffused metal oxide semiconductor (VDMOS) device structure and production method of high voltage VDMOS devices
07/18/2012CN102593162A ESD protection devices and methods for forming ESD protection devices
07/18/2012CN102593161A Sputtering target, oxide semiconductor film and semiconductor device
07/18/2012CN102593160A 半导体晶片及半导体装置 The semiconductor wafer and the semiconductor device
07/18/2012CN102593159A Enhanced graphene field-effect transistor
07/18/2012CN102593158A Flash memory unit structure and flash memory device
07/18/2012CN102593157A Power transistor of super interface with low miller capacitance and manufacture method thereof
07/18/2012CN102593156A Aqueduct type power transistor with low gate/drain electrode capacitance
07/18/2012CN102593155A Multi-porous channel current equalizing-based transient voltage suppressor
07/18/2012CN102593154A Trench gate diode with P-type buried layer structure
07/18/2012CN102593153A Semiconductor substrate, semiconductor device and manufacturing method thereof
07/18/2012CN102593130A Semiconductor and fabrication method thereof
07/18/2012CN102593105A Triggered enhanced polycrystalline diode and manufacturing method thereof
07/18/2012CN102593061A Split grid flash memory and manufacturing method thereof
07/18/2012CN102593060A Split-gate flash memory unit and manufacturing method thereof
07/18/2012CN102593059A Split gate flash memory unit and making method thereof
07/18/2012CN102593053A Pixel structure and producing method thereof
07/18/2012CN102593051A Semiconductor device and method for manufacturing the same
07/18/2012CN102593037A Semiconductor structure and making method thereof
07/18/2012CN102593007A Super junction device with multiple embedded P islands and N channels and preparation method thereof
07/18/2012CN102593002A Vertical transistor manufacturing method and vertical transistor
07/18/2012CN102593001A Method for introducing strain to channel and device manufactured by the same
07/18/2012CN102593000A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
07/18/2012CN102592999A Method for optimizing thickness of channel layer of quantum well high electron mobility transistor (HEMT) appliance
07/18/2012CN102592998A SOI-based longitudinal SiGe bipolar transistor and a preparation method thereof
07/18/2012CN102592979A High-k dielectric coefficient metal gate device
07/18/2012CN102592971A Semiconductor device and method of manufacturing thereof
07/18/2012CN102592967A Semiconductor device and method for fabricating same
07/18/2012CN102592966A Semiconductor device and preparation method thereof
07/18/2012CN102097482B Integrated double longitudinal channel SOI LDMOS (silicon on insulator laterally double diffusion metal oxide semiconductor) device unit
07/18/2012CN102064094B Large thickness oxidation layer field plate structure and manufacturing method thereof
07/18/2012CN102054858B Amorphous ternary high-K gate dielectric material and preparation method thereof
07/18/2012CN101989616B Transistor and fabrication method thereof
07/18/2012CN101976667B High-performance complementary metal oxide semiconductor (CMOS) device
07/18/2012CN101897018B Semiconductor device and method for manufacturing the same
07/18/2012CN101855704B Semiconductor device, substrate with single-crystal semiconductor thin film and methods for manufacturing same
07/18/2012CN101853873B Square switching device of memory device and method for forming the same
07/18/2012CN101771087B Thin film transistor, method of fabricating the thin film transistor, and organic light emitting diode display device including the thin film transistor
07/18/2012CN101771086B Thin film transistor, method of fabricating the thin film transistor, and organic light emitting diode display device
07/18/2012CN101765917B Display device and electronic device having the display device, and method for manufacturing thereof
07/18/2012CN101765905B Process for producing semiconductor device
07/18/2012CN101681884B Three dimensional NAND memory and method of making thereof
07/18/2012CN101627457B A method and device of diamond like carbon multi-layer doping growth
07/18/2012CN101552238B Semiconductor device and method of fabricating the same
07/18/2012CN101521226B Metal oxide semiconductor transistor and manufacture method thereof
07/18/2012CN101517744B Symmetric bipolar junction transistor design for deep sub-micron fabrication processes
07/18/2012CN101510030B Liquid crystal display panel and method for producing same
07/18/2012CN101484995B Chip module for complete power train
07/18/2012CN101452174B 显示装置 The display device
07/18/2012CN101438337B Tft substrate, display panel and display device provided with such tft substrate, and tft substrate manufacturing method
07/18/2012CN101358339B Fabricating amorphous zinc oxide semiconductor layer
07/18/2012CN101355084B Semiconductor structure, method for manufacturing semiconductor device
07/18/2012CN101355036B Trench gate semiconductor device and method for fabricating the same
07/18/2012CN101350313B Method of manufacturing semiconductor active layer, method of manufacturing thin film transistor and thin film transistor
07/18/2012CN101315896B Method for fabricating high voltage drift in semiconductor device
07/18/2012CN101308867B Memory device, method of manufacturing the same, and method of operating the same
07/18/2012CN101257079B Semiconductor layer
07/18/2012CN101165864B Method for producing semiconductor device
07/18/2012CN101017852B Nonvolatile semiconductor storage device and manufacturing method thereof
07/17/2012USRE43521 Method for manufacturing semiconductor device, including multiple heat treatment
07/17/2012US8225240 Semiconductor device
07/17/2012US8223546 Multi-dot flash memory
07/17/2012US8223290 Liquid crystal display with one of subpixel electrodes being offset with respect to other
07/17/2012US8223289 Electro-optical device and method for manufacturing the same
07/17/2012US8222976 Multilayer dielectric substrate and semiconductor package
07/17/2012US8222769 Magnetic coupling type isolator
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