Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2012
07/19/2012US20120181606 Vertical channel transistor array and manufacturing method thereof
07/19/2012US20120181605 Methods of providing electrical isolation and semiconductor structures including same
07/19/2012US20120181604 Fin fet and method of fabricating same
07/19/2012US20120181603 Vertical channel type non-volatile memory device and method for fabricating the same
07/19/2012US20120181601 Methods for forming a memory cell having a top oxide spacer
07/19/2012US20120181600 Sonos flash memory device
07/19/2012US20120181599 Low cost scalable 3d memory
07/19/2012US20120181598 Nonvolatile semiconductor memory
07/19/2012US20120181597 Semiconductor memory device
07/19/2012US20120181596 Strings of memory cells having string select gates, memory devices incorporating such strings, and methods of accessing and forming the same
07/19/2012US20120181595 Non-volatile memory cell structure and a method of fabricating the same
07/19/2012US20120181594 Eeprom cell structure and a method of fabricating the same
07/19/2012US20120181593 Semiconductor Device
07/19/2012US20120181592 Methods and structures for customized sti structures in semiconductor devices
07/19/2012US20120181587 Semiconductor device
07/19/2012US20120181586 Semiconductor device and manufacturing method thereof
07/19/2012US20120181585 Combined-source Mos Transistor with Comb-shaped Gate, and Method for Manufacturing the Same
07/19/2012US20120181584 Resistive Field Effect Transistor Having an Ultra-Steep Subthreshold Slope and Method for Fabricating the Same
07/19/2012US20120181583 Junction field effect transistor and manufacturing method thereof
07/19/2012US20120181579 Vertical parasitic pnp device in a silicon-germanium hbt process and manufacturing method of the same
07/19/2012US20120181578 Pre-gate, source/drain strain layer formation
07/19/2012US20120181577 Semiconductor wafer and semiconductor device having multilayered nitride semiconductor layer
07/19/2012US20120181576 Insulated gate bipolar transistor
07/19/2012US20120181575 Semiconductor Device and a Reverse Conducting IGBT
07/19/2012US20120181551 Silicon carbide semiconductor device
07/19/2012US20120181550 Compound semiconductor substrate and manufacturing method of the same
07/19/2012US20120181549 Stressed channel fet with source/drain buffers
07/19/2012US20120181548 Semiconductor device and method for manufacturing same
07/19/2012US20120181547 High voltage switching devices and process for forming same
07/19/2012US20120181545 Semiconductor device and method for producing same, and display device provided with semiconductor device
07/19/2012US20120181543 Flexible semiconductor device and method for producing the same
07/19/2012US20120181541 Thin Film Transistor Array Substrate
07/19/2012US20120181540 Light Emitting Device
07/19/2012US20120181539 Thin film transistor array panel
07/19/2012US20120181538 Semiconductor device and method for manufacturing semiconductor device
07/19/2012US20120181537 Magnetic Tunnel Junction for MRAM applications
07/19/2012US20120181536 Hybrid Silicon Wafer
07/19/2012US20120181534 Memory device
07/19/2012US20120181533 Thin film transistor array panel
07/19/2012US20120181532 Metal oxide semiconductor structure and production method thereof
07/19/2012US20120181531 Semiconductor element and manufacturing method of the same
07/19/2012US20120181509 Graphene device and method for manufacturing the same
07/19/2012US20120181508 Graphene Devices and Silicon Field Effect Transistors in 3D Hybrid Integrated Circuits
07/19/2012US20120181507 Semiconductor structure and circuit including ordered arrangment of graphene nanoribbons, and methods of forming same
07/19/2012US20120181506 High-Speed Graphene Transistor and Method of Fabrication by Patternable Hard Mask Materials
07/19/2012US20120181505 Radiation Hardened Transistors Based on Graphene and Carbon Nanotubes
07/19/2012US20120181503 Method of Fabricating Silicon Quantum Dot Layer and Device Manufactured Using the Same
07/19/2012US20120181502 Method of electrically contacting nanowire arrays
07/19/2012US20120181501 Graphene on Diamond Devices and Associated Methods
07/19/2012US20120181185 Configuration, a sensing element with such configuration, electrochemical sensor comprising such sensing element and method for electrochemical sensing using such electrochemical sensor
07/19/2012DE102012200326A1 Silziumkarbid-Halbleitereinrichtung Silziumkarbid semiconductor device
07/19/2012DE102012100349A1 Halbleiterbauelement und Reverse Conducting IGBT Semiconductor device and Reverse Conducting IGBT
07/19/2012DE102012100234A1 Verfahren zur Herstellung einer Halbleitervorrichtung A process for producing a semiconductor device
07/19/2012DE102011002857A1 Halbleiterbauelement mit einem BiLDMOS- oder SOI-BiLDMOS- Transistor, sowie Kaskodenschaltung Semiconductor component with a BiLDMOS- or SOI transistor BiLDMOS-, and cascode
07/19/2012DE102011002769A1 Hybridkontaktstruktur mit Kontakten mit kleinem Aspektverhältnis in einem Halbleiterbauelement Hybrid contact structure with contacts with small aspect ratio in a semiconductor device
07/18/2012EP2477328A2 Method and Apparatus for Effecting High-Frequency Amplification or Oscillation
07/18/2012EP2477228A1 Semiconductor device and fabrication method thereof
07/18/2012EP2477226A1 Semiconductor device including semiconductor substrate having diode region and igbt region
07/18/2012EP2477216A1 Hybrid bulk/SOI device with a buried doped layer and manufacturing method thereof
07/18/2012EP2477213A1 Semiconductor device and process for production of semiconductor device
07/18/2012EP2477171A1 Active matrix substrate and display device
07/18/2012EP2477019A1 Harsh environment pressure sensor
07/18/2012EP2476138A1 A fin-fet non-volatile memory cell, and an array and method of manufacturing
07/18/2012EP2476134A1 A method for reducing internal mechanical stresses in a semiconductor structure and a low mechanical stress semiconductor structure
07/18/2012EP2195848B1 Thin film transistor, manufacturing method therefor, and display apparatus using the same
07/18/2012EP2079101B1 OHMIC ELECTRODE FOR SiC SEMICONDUCTOR, METHOD FOR MANUFACTURE OF OHMIC ELECTRODE FOR SiC SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICE
07/18/2012EP1869712B1 Structure and method for realizing a microelectronic device provided with a number of quantum wires capable of forming one or more transistor channels
07/18/2012EP1635400B1 Field effect transistor
07/18/2012EP1354361B1 Solid state imager arrangements
07/18/2012CN202340195U Converter
07/18/2012CN202339921U 提高晶体管芯片抗二次击穿耐量的结构 Improve transistor chip resistance to secondary breakdown structure tolerance
07/18/2012CN1967868B Semiconductor device and method of manufacturing the same
07/18/2012CN1790741B Semiconductor device and method for manufacturing the same
07/18/2012CN102598496A Rectifier arrangement
07/18/2012CN102598341A 光电转换元件 A photoelectric conversion element
07/18/2012CN102598285A Method for manufacturing semiconductor device
07/18/2012CN102598284A Semiconductor device
07/18/2012CN102598283A Semiconductor device and method for manufacturing the same
07/18/2012CN102598282A Semiconductor device and manufacturing method thereof
07/18/2012CN102598281A Thin film transistors having multiple doped silicon layers
07/18/2012CN102598280A Liquid crystal display device and electronic device including the same
07/18/2012CN102598279A Semiconductor device
07/18/2012CN102598278A Semiconductor device
07/18/2012CN102598277A Semiconductor device and process for manufacturing same
07/18/2012CN102598276A Method of forming a semiconductor device
07/18/2012CN102598275A Semiconductor devices with field plates
07/18/2012CN102598274A Split gate field effect transistor
07/18/2012CN102598273A Split level shallow trench isolation for area efficient body contacts in SOI MOSFET
07/18/2012CN102598272A Quality control process for UMG-Si feedstock
07/18/2012CN102598266A Semiconductor device
07/18/2012CN102598265A 半导体元件 Semiconductor components
07/18/2012CN102598256A Package configurations for low EMI circuits
07/18/2012CN102598249A 半导体装置 Semiconductor device
07/18/2012CN102598248A Semiconductor device
07/18/2012CN102598247A Semiconductor device
07/18/2012CN102598246A Semiconductor device
07/18/2012CN102598244A Hybrid double box back gate silicon-on-insulator wafers with enhanced mobility channels
07/18/2012CN102598232A Method for manufacturing organic semiconductor film, and organic semiconductor film array
07/18/2012CN102598231A Flexible semiconductor device, manufacturing method for same, and image display device
07/18/2012CN102598230A Mask level reduction for mofet
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