Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2012
08/02/2012US20120195097 Method and system for utilizing perovskite material for charge storage and as a dielectric
08/02/2012US20120194819 Apparatus and methods for sensing or imaging using stacked thin films
08/02/2012US20120194757 Wiring layer, semiconductor device and liquid crystal display device
08/02/2012US20120194286 Methods and systems for mems cmos devices having arrays of elements
08/02/2012US20120194282 Internally transduced pn-diode-based ultra high frequency micromechanical resonator
08/02/2012US20120194262 Semiconductor device and method for driving the same
08/02/2012US20120193796 Polysilicon layer and method of forming the same
08/02/2012US20120193769 Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
08/02/2012US20120193765 Emissivity profile control for thermal uniformity
08/02/2012US20120193764 Nanostructuring process for ingot surface, wafer manufacturing method, and wafer using the same
08/02/2012US20120193763 Method of manufacturing semiconductor device, semiconductor device and resist coater
08/02/2012US20120193762 Reversal lithography approach by selective deposition of nanoparticles
08/02/2012US20120193761 Highly Integrated Semiconductor Devices Including Capacitors
08/02/2012US20120193760 Semiconductor device and manufacturing method therefor
08/02/2012US20120193759 Capacitor and semiconductor device
08/02/2012US20120193758 Semiconductor apparatus and manufacturing method thereof
08/02/2012US20120193757 Capacitor structure and fabrication method thereof
08/02/2012US20120193756 Diodes with native oxide regions for use in memory arrays and methods of forming the same
08/02/2012US20120193754 Mems device with integral packaging
08/02/2012US20120193753 Methods for reducing the metal content in the device layer of soi structures and soi structures produced by such methods
08/02/2012US20120193751 Semiconductor device and method of manufacturing
08/02/2012US20120193749 Semiconductor device
08/02/2012US20120193748 Trench-based power semiconductor devices with increased breakdown voltage characteristics
08/02/2012US20120193747 Schottky barrier diode, a method of forming the diode and a design structure for the diode
08/02/2012US20120193738 TMR Device with Low Magnetorestriction Free Layer
08/02/2012US20120193737 Mram device and method of assembling same
08/02/2012US20120193736 Fabrication process and layout for magnetic sensor arrays
08/02/2012US20120193735 Microelectromechanical system microphone package structure
08/02/2012US20120193734 Stress sensor for in-situ measurement of package-induced stress in semiconductor devices
08/02/2012US20120193733 Capacitance type mems sensor
08/02/2012US20120193732 Mems device and method for forming the same
08/02/2012US20120193731 Edge-mounted sensor
08/02/2012US20120193730 Gas sensor element and manufacturing method of the same
08/02/2012US20120193729 Devices and methods to optimize materials and properties for replacement metal gate structures
08/02/2012US20120193728 Semiconductor device and manufacturing method therefor
08/02/2012US20120193725 CMOS Transistor With Dual High-k Gate Dielectric and Method of Manufacture Thereof
08/02/2012US20120193720 Semiconductor device
08/02/2012US20120193717 Semiconductor device and method of manufacturing semiconductor device
08/02/2012US20120193716 High-k transistors with low threshold voltage
08/02/2012US20120193715 Structure with isotropic silicon recess profile in nanoscale dimensions
08/02/2012US20120193714 Soi substrate, method of manufacturing the soi substrate, semiconductor device, and method of manufacturing the semiconductor device
08/02/2012US20120193713 FinFET device having reduce capacitance, access resistance, and contact resistance
08/02/2012US20120193712 FinFET STRUCTURE HAVING FULLY SILICIDED FIN
08/02/2012US20120193711 Semiconductor device and method of manufacturing the same
08/02/2012US20120193710 Device and method of reducing junction leakage
08/02/2012US20120193709 Mos transistor and fabrication method of semiconductor integrated circuit device
08/02/2012US20120193708 Drive Current Increase in Field Effect Transistors by Asymmetric Concentration Profile of Alloy Species of a Channel Semiconductor Alloy
08/02/2012US20120193707 High voltage multigate device and manufacturing method thereof
08/02/2012US20120193705 Vertical nonvolatile memory devices having reference features
08/02/2012US20120193703 Cross-point diode arrays and methods of manufacturing cross-point diode arrays
08/02/2012US20120193702 Semiconductor device and manufacturing method thereof
08/02/2012US20120193700 Semiconductor Memory Device And Method Of Forming The Same
08/02/2012US20120193699 Nonvolatile semiconductor memory device and production method for the same
08/02/2012US20120193698 Nonvolatile semiconductor memory device and method of manufacturing the same
08/02/2012US20120193694 Wireless chip and electronic appliance having the same
08/02/2012US20120193688 ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS
08/02/2012US20120193687 REDUCED S/D CONTACT RESISTANCE OF III-V MOSFET USING LOW TEMPERATURE METAL-INDUCED CRYSTALLIZATION OF n+ Ge
08/02/2012US20120193686 Semiconductor devices having encapsulated stressor regions and related fabrication methods
08/02/2012US20120193680 Structure with isotropic silicon recess profile in nanoscale dimensions
08/02/2012US20120193679 Heterojunction tunneling field effect transistors, and methods for fabricating the same
08/02/2012US20120193678 Fabrication of a vertical heterojunction tunnel-fet
08/02/2012US20120193677 III-N Device Structures and Methods
08/02/2012US20120193676 Diode structures with controlled injection efficiency for fast switching
08/02/2012US20120193675 ESD Protection Device
08/02/2012US20120193655 Alignment tolerant patterning on flexible substrates
08/02/2012US20120193644 Boron-doped diamond semiconductor
08/02/2012US20120193643 Semiconductor device
08/02/2012US20120193641 Normally-off power jfet and manufacturing method thereof
08/02/2012US20120193640 Crystalline aluminum carbide thin film, semiconductor substrate having the aluminum carbide thin film formed thereon and method of fabricating the same
08/02/2012US20120193639 GaN-BASED SEMICONDUCTOR ELEMENT
08/02/2012US20120193638 METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN, AND AIN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
08/02/2012US20120193637 Low gate-leakage structure and method for gallium nitride enhancement mode transistor
08/02/2012US20120193636 Very high transmittance, back-illuminated, silicon-on-sapphire semiconductor wafer substrate for high quantum efficiency and high resolution, solid-state, imaging focal plane arrays
08/02/2012US20120193635 Semiconductor device, process for production of the semiconductor device, and display device equipped with the semiconductor device
08/02/2012US20120193634 Thin film transistor array panel and method for manufacturing the same
08/02/2012US20120193633 Semiconductor device and method for manufacturing same
08/02/2012US20120193632 Silicon structure and manufacturing methods thereof and of capacitor including silicon structure
08/02/2012US20120193631 Polysilicon control etch back indicator
08/02/2012US20120193628 Semiconductor device
08/02/2012US20120193626 Thin film transistor array substrate and manufacturing method thereof
08/02/2012US20120193625 Method for manufacturing semiconductor device and semiconductor device
08/02/2012US20120193623 Carbon addition for low resistivity in situ doped silicon epitaxy
08/02/2012US20120193620 Transistor and semiconductor device
08/02/2012US20120193610 Methods of making heterojunction devices
08/02/2012US20120193609 Germanium-based quantum well devices
08/02/2012US20120193606 Nanocrystals Including III-V Semiconductors
08/02/2012US20120193605 Powdered quantum dots
08/02/2012US20120193603 Graphene growth on a carbon-containing semiconductor layer
08/02/2012US20120193602 Nanoscopic wire-based devices and arrays
08/02/2012US20120193596 Semiconductor device and manufacturing method thereof
08/02/2012US20120193532 Semiconductor structure and fault location detecting system
08/02/2012US20120192934 Nanostructure, Photovoltaic Device, and Method of Fabrication Thereof
08/02/2012DE112010003344T5 Struktur und Verfahren, um ein thermisch stabiles Silizid in schmal dimensionierten Gate-Stacks zu bilden Structure and method to form a thermally stable silicide in narrow dimensioned gate stacks
08/02/2012DE112010002017T5 Halbleitervorrichtung Semiconductor device
08/02/2012DE112009003657T5 Grabenbasierte leistungshalbleitervorrichtungen mit eigensohafteneiner erhöhten durchbruchspannung Grave-based power semiconductor devices with eigensohafteneiner increased by breakdown voltage
08/02/2012DE112009002611T5 Kontaktbildungsverfahren, Verfahren zum Herstellen einer Halbleitervorrichtung, und Halbleitervorrichtung Contact formation method A method of manufacturing a semiconductor device, and semiconductor device
08/02/2012DE102012201207A1 Halbleitervorrichtungen mit eingekapselten Verspannungsbereichen und zugehörige Herstellungsverfahren Semiconductor devices encapsulated strain fields and associated manufacturing processes
08/02/2012DE102011009697A1 Leuchtmodul zur Abstrahlung von Mischlicht Light module for emitting mixed light
08/02/2012DE102011003456A1 Halbleiteranordnung mit reduziertem Einschaltwiderstand A semiconductor device having reduced on-resistance
08/02/2012DE102011003439A1 Durchlassstromerhöhung in Feldeffekttransistoren durch asymmetrische Konzentrationsprofile von Legierungssubstanzen einer Kanalhalbleiterlegierung Forward current increase in field-effect transistors by asymmetric concentration profiles of alloy substances of a channel semiconductor alloy
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