Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2012
07/17/2012US8222748 Packaged electronic devices having die attach regions with selective thin dielectric layer
07/17/2012US8222740 Zinc oxide based composites and methods for their fabrication
07/17/2012US8222734 Hybrid integrated circuit device and electronic device
07/17/2012US8222712 Semiconductor integrated circuit device and a method of manufacturing the same
07/17/2012US8222706 Semiconductor device
07/17/2012US8222705 Solid-state image pickup device, method of manufacturing the same and electronic apparatus
07/17/2012US8222704 Compact electrical switching devices with nanotube elements, and methods of making same
07/17/2012US8222698 Bond pad with integrated transient over-voltage protection
07/17/2012US8222696 Semiconductor device having buried oxide film
07/17/2012US8222695 Process of forming an electronic device including an integrated circuit with transistors coupled to each other
07/17/2012US8222694 True CSP power MOSFET based on bottom-source LDMOS
07/17/2012US8222693 Trench-gate transistors and their manufacture
07/17/2012US8222691 Gate pullback at ends of high-voltage vertical transistor structure
07/17/2012US8222690 Vertical power MOSFET semiconductor apparatus having separate base regions and manufacturing method thereof
07/17/2012US8222689 High-voltage metal oxide semiconductor device and fabrication method thereof
07/17/2012US8222688 SONOS stack with split nitride memory layer
07/17/2012US8222687 Nonvolatile semiconductor storage device and method of manufacture thereof
07/17/2012US8222686 Semiconductor integrated circuit device and a method of manufacturing the same
07/17/2012US8222685 Flash memory device and method for manufacturing the same
07/17/2012US8222684 Method of manufacturing a semiconductor integrated circuit using a selective disposal spacer technique and semiconductor integrated circuit manufactured thereby
07/17/2012US8222681 Bipolar semiconductor device and manufacturing method
07/17/2012US8222680 Double and triple gate MOSFET devices and methods for making same
07/17/2012US8222679 Semiconductor component with integrated hall effect sensor
07/17/2012US8222678 Semiconductor structure
07/17/2012US8222677 Semiconductor memory device and method of manufacturing the same
07/17/2012US8222676 Transistor
07/17/2012US8222675 Nitride semiconductor device including gate insulating portion containing AIN
07/17/2012US8222671 Power semiconductor devices
07/17/2012US8222666 Light-emitting device and electronic device
07/17/2012US8222649 Semiconductor device and method of manufacturing the same
07/17/2012US8222648 Silicon carbide semiconductor device and method for producing the same
07/17/2012US8222647 Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method
07/17/2012US8222646 Thin-film transistors with metal source and drain and methods of fabrication
07/17/2012US8222645 Display device
07/17/2012US8222644 Fan-out unit and thin-film transistor array substrate having the same
07/17/2012US8222643 Method of manufacturing thin film transistor, thin film transistor, and display unit
07/17/2012US8222642 Field-effect type transistor having two gate electrodes and display element using the same
07/17/2012US8222640 Display device and electronic device having the display device, and method for manufacturing thereof
07/17/2012US8222639 Nitride based semiconductor device and method of manufacturing the same
07/17/2012US8222636 Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus
07/17/2012US8222633 Organic transistor using thiazolothiazole derivatives and method for fabricating the same
07/17/2012US8222631 Organic thin film transistor and flat display device having the same
07/17/2012US8222629 Electronic device using quantum dot
07/17/2012US8222171 Method for the production of a ceramic substrate, and a ceramic substrate
07/17/2012US8222160 Metal containing sacrifice material and method of damascene wiring formation
07/17/2012US8222134 Self-aligned barrier layers for interconnects
07/17/2012US8222127 Methods of forming structures having nanotubes extending between opposing electrodes and structures including same
07/17/2012US8222123 Method for reuse of wafers for growth of vertically-aligned wire arrays
07/17/2012US8222112 Method for manufacturing NAND memory cells
07/17/2012US8222105 Methods of fabricating a memory device
07/17/2012US8222103 Semiconductor device with embedded low-K metallization
07/17/2012US8222101 Method of fabricating a MOS transistor having a gate insulation layer with a lateral portion and a vertical portion
07/17/2012US8222094 Method for manufacturing an EEPROM cell
07/17/2012US8222073 Fabricating TFT having fluorocarbon-containing layer
07/17/2012US8222067 Method of manufacturing multibit electro-mechanical memory device having movable electrode
07/17/2012US8222065 Method and system for forming a capacitive micromachined ultrasonic transducer
07/17/2012US8222064 Vertical light emitting diode device structure and method of fabricating the same
07/17/2012CA2394886C Inkjet-fabricated integrated circuits
07/12/2012WO2012094546A1 Silicon controlled rectifiers (scr), methods of manufacture and design structures
07/12/2012WO2012094357A2 Transistor including multiple reentrant profiles
07/12/2012WO2012094353A1 Transistor including multi-layer reentrant profile
07/12/2012WO2012094109A1 Transistor including reduced channel length
07/12/2012WO2012093587A1 Co2fe-based heusler alloy and spintronic device using same
07/12/2012WO2012093544A1 Method for manufacturing semiconductor device
07/12/2012WO2012093362A1 An apparatus and a method
07/12/2012WO2012093360A1 Semiconductor device
07/12/2012WO2012093177A2 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semi conductor devices
07/12/2012WO2012092691A1 Regular semiconductor
07/12/2012WO2012068066A3 Ohmic contact to semiconductor
07/12/2012WO2012063752A4 Semiconductor device and method of driving the same
07/12/2012WO2012058281A3 Hybrid active-field gap extended drain mos transistor
07/12/2012WO2012048901A8 Method for switching a normally on field effect transistor
07/12/2012US20120178631 Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wires
07/12/2012US20120176828 Semiconductor Devices and Power Conversion Systems
07/12/2012US20120176710 Semiconductor ESD Circuit and Method
07/12/2012US20120176609 Wireless MEMS sensor and method of reading the same
07/12/2012US20120176183 Semiconductor device and method for driving same
07/12/2012US20120175749 Structure and Method to Fabricate Resistor on FinFET Processes
07/12/2012US20120175748 Semiconductor structures including dual fins and methods of fabrication
07/12/2012US20120175747 Mems device assembly and method of packaging same
07/12/2012US20120175745 Methods for fabricating semiconductor devices and semiconductor devices using the same
07/12/2012US20120175743 Epitaxial structure
07/12/2012US20120175742 Epitaxial structure and method for making the same
07/12/2012US20120175741 Method for Direct Deposition of a Germanium Layer
07/12/2012US20120175740 Base substrate, group 3b nitride crystal, and method for manufacturing the same
07/12/2012US20120175739 Planar nonpolar group-iii nitride films grown on miscut substrates
07/12/2012US20120175738 Methods of fabricating bipolar transistor for improved isolation, passivation and critical dimension control
07/12/2012US20120175736 Semiconductor device
07/12/2012US20120175735 Semiconductor Device and Method of Forming IPD on Molded Substrate
07/12/2012US20120175731 Semiconductor structure with passive element network and manufacturing method thereof
07/12/2012US20120175730 Integrated circuit and production method
07/12/2012US20120175729 Discrete Semiconductor Device and Method of Forming Sealed Trench Junction Termination
07/12/2012US20120175724 Trenched Schottky Diode and Method of Forming a Trenched Schottky Diode
07/12/2012US20120175718 Bipolar select device for resistive sense memory
07/12/2012US20120175717 Storage element and storage device
07/12/2012US20120175716 Storage element and storage device
07/12/2012US20120175715 Encapsulated micro-electromechanical system switch and method of manufacturing the same
07/12/2012US20120175713 Semiconductor structures and methods of manufacturing the same
07/12/2012US20120175711 Self-Aligned Contacts for High k/Metal Gate Process Flow
07/12/2012US20120175707 Semiconductor device including metal silicide layer and fabrication method thereof
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