Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2012
07/03/2012US8212313 Semiconductor device
07/03/2012US8212312 Semiconductor device and manufacturing method of the same
07/03/2012US8212310 Semiconductor device
07/03/2012US8212309 Non-volatile memory device and method of manufacturing same
07/03/2012US8212308 Nonvolatile semiconductor flash memory
07/03/2012US8212306 Semiconductor storage device
07/03/2012US8212305 Semiconductor device with improved insulating film and floating gate arrangement to decrease memory cell size without reduction of capacitance
07/03/2012US8212304 Method for deleting data from NAND type nonvolatile memory
07/03/2012US8212303 Nonvolatile semiconductor memory device
07/03/2012US8212302 Nonvolatile semiconductor memory device
07/03/2012US8212301 Capacitor and method for fabricating the same
07/03/2012US8212300 Semiconductor device
07/03/2012US8212299 Semiconductor device having a thin film capacitor of a MIM (metal-insulator-metal) structure
07/03/2012US8212296 Semiconductor device and a method of manufacturing the same, and solid-state image pickup element
07/03/2012US8212291 Inverse mode SiGe HBT cascode device and fabrication method
07/03/2012US8212289 Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
07/03/2012US8212284 Display device and manufacturing method of the display device
07/03/2012US8212283 Reverse-conducting semiconductor device
07/03/2012US8212282 Semiconductor device used in step-up DC-DC converter, and step-up DC-DC converter
07/03/2012US8212280 Light-emitting element and display device
07/03/2012US8212267 Organic electroluminescence element and manufacturing method thereof
07/03/2012US8212265 Light emitting device and method for fabricating the light emitting device
07/03/2012US8212261 SiC semiconductor device with BPSG insulation film
07/03/2012US8212260 P-type semiconductor material, semiconductor device, organic electroluminescent device, and method for manufacturing P-type semiconductor material
07/03/2012US8212259 III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates
07/03/2012US8212257 Semiconductor device
07/03/2012US8212256 Pixel structure, display panel, eletro-optical apparatus, and method thererof
07/03/2012US8212254 Thin film transistor, manufacturing method thereof, and semiconductor device
07/03/2012US8212253 Shallow junction formation and high dopant activation rate of MOS devices
07/03/2012US8212252 Light-emitting device
07/03/2012US8212250 Backside texturing by cusps to improve IR response of silicon solar cells and photodetectors
07/03/2012US8212249 Methods of forming a layer of material on a substrate and structures formed therefrom
07/03/2012US8212248 Amorphous oxide and field effect transistor
07/03/2012US8212246 N-type doping in metal oxides and metal chalcogenides by electrochemical methods
07/03/2012US8212242 Organic light emitting diode display having a corner-cube pattern cover layer
07/03/2012US8212240 Line element and method of manufacturing line element
07/03/2012US8212236 II-VI core-shell semiconductor nanowires
07/03/2012US8212235 Nanowire-based opto-electronic device
07/03/2012US8212234 Method of fabricating nanosized filamentary carbon devices over a relatively large-area
07/03/2012US8211785 Fabrication method for semiconductor device including flash lamp annealing processes
07/03/2012US8211766 Method of fabricating a trench power MOS transistor
07/03/2012US8211763 Methods of forming vertical field effect transistors, vertical field effect transistors, and DRAM cells
07/03/2012US8211740 Solid state imaging device having wirings with diffusion prevention film
07/03/2012US8211723 Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes
07/03/2012US8211238 System, method and apparatus for self-cleaning dry etch
06/2012
06/28/2012WO2012088338A2 Photodetecting imager devices having correlated double sampling and associated methods
06/28/2012WO2012088334A1 Electrical devices with graphene on boron nitride
06/28/2012WO2012088097A2 Column iv transistors for pmos integration
06/28/2012WO2012088085A1 Arrays of filled nanostructures with protruding segments and methods thereof
06/28/2012WO2012087987A2 Multi-gate transistors
06/28/2012WO2012087986A2 Magnetic phase change logic
06/28/2012WO2012087978A2 Edge rounded field effect transistors and methods of manufacturing
06/28/2012WO2012087974A2 Process margin engineering in charge trapping field effect transistors
06/28/2012WO2012087820A2 Stacked metal fin cell
06/28/2012WO2012087748A2 Uniaxially strained quantum well device and method of making same
06/28/2012WO2012087660A2 Semiconductor device contacts
06/28/2012WO2012087637A2 Improving transistor channel mobility using alternate gate dielectric materials
06/28/2012WO2012087629A2 Systems and methods for generating a cross-product matrix in a single pass through data using single pass levelization
06/28/2012WO2012087581A2 Transistors with high concentration of boron doped germanium
06/28/2012WO2012087404A1 Selective germanium p-contact metalization through trench
06/28/2012WO2012087403A1 Contact resistance reduction employing germanium overlayer pre-contact metalization
06/28/2012WO2012086805A1 Insulation structure and method for manufacturing same
06/28/2012WO2012086672A1 Polymer compound having carbon cluster structure and organic device using same
06/28/2012WO2012086609A1 Field-effect transistor, method for producing same, and electronic device including same
06/28/2012WO2012086595A1 Semiconductor device, color filter substrate, display device provided with color filter substrate, and method for manufacturing semiconductor device
06/28/2012WO2012086540A1 Thin-film transistor and method for manufacturing thin-film transistor
06/28/2012WO2012086513A1 Semiconductor device and display device
06/28/2012WO2012086481A1 Semiconductor device and method for producing same
06/28/2012WO2012086387A1 Method for manufacturing graphene substrate, and graphene substrate
06/28/2012WO2012086257A1 Process for manufacture of silicon carbide semiconductor device
06/28/2012WO2012086102A1 Semiconductor device and method for manufacturing same
06/28/2012WO2012086099A1 Silicon carbide semiconductor device and method for manufacturing same
06/28/2012WO2012085987A1 Method for producing semiconductor transistor, drive circuit using semiconductor transistor produced by said method, pixel circuit including said drive circuit and display element, display panel having said pixel circuits arranged in a matrix, and display device including said panel
06/28/2012WO2012085984A1 Method for producing field-effect semiconductor transistor, pixel circuit including display element and drive circuit using field-effect semiconductor transistor produced by said method, display panel having said pixel circuits arranged in a matrix, and display device including said panel
06/28/2012WO2012085715A1 Nanowire field -effect device with multiple gates
06/28/2012WO2012085677A1 Complementary darlington emitter follower with improved switching speed and improved cross-over control and increased output voltage
06/28/2012WO2012085676A1 Reduction of stored charge in the base region of a bipolar transistor to improve switching speed
06/28/2012WO2012085666A1 Monolithic darlington with intermediate base contact
06/28/2012WO2012084253A1 Lithography-free schottky semiconductor process having the possibility of integrating a protective diode
06/28/2012WO2012083787A1 Metal-oxide-semiconductor (mos) device and method for fabricating the same
06/28/2012WO2012083784A1 Semiconductor device and method for fabricating the same
06/28/2012WO2012083783A1 Double-diffusion metal-oxide semiconductor devices
06/28/2012WO2012083590A1 Power semiconductor field effect transistor structure with charge trapping material in the gate dielectric
06/28/2012WO2012039580A3 Polymer for a binder, comprising a triarylamine function group, and method for preparing an organic thin film transistor using same
06/28/2012WO2010052245A3 Reverse-conducting semiconductor device
06/28/2012US20120164802 Advanced cmos using super steep retrograde wells
06/28/2012US20120163077 Multi-level cell nor flash memory device
06/28/2012US20120163070 Magnetoresistive element and magnetic memory
06/28/2012US20120162947 Vertically integrated systems
06/28/2012US20120162622 Field extension to reduce non-yielding exposures of wafer
06/28/2012US20120162558 Thin film transistor array substrate and liquid crystal display device
06/28/2012US20120162181 Display panel, pixel circuit and driving method of differential voltage driven device therein
06/28/2012US20120161322 Electronic component manufacturing method including step of embedding metal film
06/28/2012US20120161298 Diode and electrostatic discharge protection circuit including the same
06/28/2012US20120161296 MULTIPLE PATTERNING USING IMPROVED PATTERNABLE LOW-k DIELECTRIC MATERIALS
06/28/2012US20120161295 Cyclic carbosilane dielectric films
06/28/2012US20120161293 Method for producing an integrated circuit and resulting film chip
06/28/2012US20120161292 Process for assembling two wafers and corresponding device
06/28/2012US20120161291 Process for cleaving a substrate
06/28/2012US20120161290 Black GE Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays
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