Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/1977
06/07/1977US4028717 Field effect transistor having improved threshold stability
06/07/1977US4028716 Bulk channel charge-coupled device with blooming suppression
06/07/1977US4028715 Use of floating diffusion for low-noise electrical inputs in CCD's
06/07/1977US4028563 Integrated zener diode
06/07/1977US4028150 Method for making reliable MOSFET device
06/07/1977US4028149 Process for forming monocrystalline silicon carbide on silicon substrates
06/07/1977US4028147 Monolithic gallium arsenide
06/07/1977US4028140 Semiconductor device manufacture
06/07/1977US4027382 Silicon gate CCD structure
06/07/1977US4027381 Silicon gate ccd structure
06/07/1977US4027380 Silicon, doping
05/1977
05/31/1977US4027324 Bidirectional transistor
05/31/1977US4027322 Zero point switching thyristor having an isolated emitter region
05/31/1977US4027321 Reliable MOSFET device and method for making same
05/31/1977US4027320 Static storage element and process for the production thereof
05/31/1977US4027260 Charge transfer circuits exhibiting low pass filter characteristics
05/24/1977US4025944 Ohmic contracts to p-type indium phosphide
05/24/1977US4025942 Low pressure transducers employing large silicon diaphragms having non-critical electrical properties
05/24/1977US4025940 MOS type semiconductor device
05/24/1977US4025910 Solid-state camera employing non-volatile charge storage elements
05/24/1977US4025890 Semiconductor piezoresistive strain transducer
05/24/1977US4025802 Capacitance circuit
05/24/1977US4025364 Process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases
05/17/1977US4024569 Semiconductor ohmic contact
05/17/1977US4024568 Transistor with base/emitter encirclement configuration
05/17/1977US4024566 Deep diode device
05/17/1977US4024564 Semiconductor device having at least one PN junction and channel stopper surrounder by a protecture conducting layer
05/17/1977US4024563 Doped oxide buried channel charge-coupled device
05/17/1977US4024561 Field effect transistor monitors
05/17/1977US4023260 Method of manufacturing semiconductor diodes for use in millimeter-wave circuits
05/17/1977US4023258 Method of manufacturing semiconductor diodes for use in millimeter-wave circuits
05/10/1977US4023195 MOS field-effect transistor structure with mesa-like contact and gate areas and selectively deeper junctions
05/10/1977US4023053 Variable capacity diode device
05/10/1977US4022931 Process for making semiconductor device
05/03/1977US4021837 Symmetrical semiconductor switch having carrier lifetime degrading structure
05/03/1977US4021835 Semiconductor device and a method for fabricating the same
05/03/1977US4021789 Self-aligned integrated circuits
05/03/1977US4021787 Information storage circuit employing MNOS transistors
05/03/1977US4021786 Memory cell circuit and semiconductor structure therefore
05/03/1977US4021751 Field effect transistor amplifier
05/03/1977US4021687 Transistor circuit for deep saturation prevention
05/03/1977US4021682 Charge detectors for CCD registers
05/03/1977US4020830 Field effect transistor
04/1977
04/26/1977US4019248 High voltage junction semiconductor device fabrication
04/26/1977US4019247 Fabrication of a charge-coupled device
04/19/1977US4019198 Non-volatile semiconductor memory device
04/19/1977US4019197 Semiconductor floating gate storage device with lateral electrode system
04/19/1977US4019195 Semi-conductor device capable of supporting high amperages of inverse current
04/19/1977US4019152 Bias circuit for junction diodes
04/19/1977US4018627 Method for fabricating semiconductor devices utilizing oxide protective layer
04/12/1977US4017890 Intermetallic compound layer in thin films for improved electromigration resistance
04/12/1977US4017888 Non-volatile metal nitride oxide semiconductor device
04/12/1977US4017887 Method and means for passivation and isolation in semiconductor devices
04/12/1977US4017885 Large value capacitor
04/12/1977US4017884 Magnetic field sensitive diode and method of making same
04/12/1977US4017883 Single-electrode charge-coupled random access memory cell with impurity implanted gate region
04/12/1977US4017882 Transistor having integrated protection
04/12/1977US4016644 Methods of fabricating low pressure silicon transducers
04/12/1977US4016643 Overlay metallization field effect transistor
04/05/1977US4016596 High performance integrated bipolar and complementary field effect transistors
04/05/1977US4016594 Semiconductor device and method of manufacturing the device
04/05/1977US4016593 Bidirectional photothyristor device
04/05/1977US4016592 Light-activated semiconductor-controlled rectifier
04/05/1977US4016591 Semiconductor controlled rectifier
04/05/1977US4016589 Photosensitive, voltage responsive, rectifier
04/05/1977US4016588 Non-volatile semiconductor memory device
04/05/1977US4016587 Raised source and drain IGFET device and method
04/05/1977US4016586 Photovoltaic heterojunction device employing a wide bandgap material as an active layer
04/05/1977US4016017 Integrated circuit isolation structure and method for producing the isolation structure
04/05/1977US4016016 Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
04/05/1977US4016007 Semiconductors
03/1977
03/29/1977US4015282 Solid state amplifier device and circuit therefor
03/29/1977US4015281 MIS-FETs isolated on common substrate
03/29/1977US4015279 Edgeless transistor
03/29/1977US4015278 Field effect semiconductor device
03/29/1977US4015175 Discrete, fixed-value capacitor
03/29/1977US4015159 Semiconductor integrated circuit transistor detector array for channel electron multiplier
03/29/1977US4014718 Method of making integrated circuits free from the formation of a parasitic PNPN thyristor
03/22/1977US4014037 Semiconductor device
03/22/1977US4014036 Single-electrode charge-coupled random access memory cell
03/22/1977US4013979 Cmos oscillator with first and second mos transistors of opposed type integrated on the same substrate
03/22/1977US4013897 Information signal transfer method and a charge transfer
03/22/1977US4013489 Process for forming a low resistance interconnect in MOS N-channel silicon gate integrated circuit
03/22/1977US4013485 Process for eliminating undesirable charge centers in MIS devices
03/22/1977US4013484 High density CMOS process
03/22/1977US4013483 Method of adjusting the threshold voltage of field effect transistors
03/15/1977US4012764 Semiconductor integrated circuit device
03/15/1977US4012763 Semiconductor device having insulator film with different prescribed thickness portions
03/15/1977US4012762 Semiconductor field effect device having oxygen enriched polycrystalline silicon
03/15/1977US4012761 Self-protected semiconductor device
03/15/1977US4012759 Bulk channel charge transfer device
03/15/1977US4012758 Bulk channel charge transfer device with bias charge
03/15/1977US4012643 Noise elimination circuit
03/15/1977US4012587 Solid state image sensor
03/15/1977US4012417 Process for preparing pyrano[3,4-b]indole or thio pyrano[3,4-b]indole derivatives
03/15/1977US4011745 Semiconductor sensors
03/15/1977US4011653 Method for manufacturing a semiconductor integrated circuit including an insulating gate type semiconductor transistor
03/08/1977US4011582 Deep power diode
03/08/1977US4011581 MOSFET antiparasitic layer
03/08/1977US4011580 Integrated circuit