Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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06/07/1977 | US4028717 Field effect transistor having improved threshold stability |
06/07/1977 | US4028716 Bulk channel charge-coupled device with blooming suppression |
06/07/1977 | US4028715 Use of floating diffusion for low-noise electrical inputs in CCD's |
06/07/1977 | US4028563 Integrated zener diode |
06/07/1977 | US4028150 Method for making reliable MOSFET device |
06/07/1977 | US4028149 Process for forming monocrystalline silicon carbide on silicon substrates |
06/07/1977 | US4028147 Monolithic gallium arsenide |
06/07/1977 | US4028140 Semiconductor device manufacture |
06/07/1977 | US4027382 Silicon gate CCD structure |
06/07/1977 | US4027381 Silicon gate ccd structure |
06/07/1977 | US4027380 Silicon, doping |
05/31/1977 | US4027324 Bidirectional transistor |
05/31/1977 | US4027322 Zero point switching thyristor having an isolated emitter region |
05/31/1977 | US4027321 Reliable MOSFET device and method for making same |
05/31/1977 | US4027320 Static storage element and process for the production thereof |
05/31/1977 | US4027260 Charge transfer circuits exhibiting low pass filter characteristics |
05/24/1977 | US4025944 Ohmic contracts to p-type indium phosphide |
05/24/1977 | US4025942 Low pressure transducers employing large silicon diaphragms having non-critical electrical properties |
05/24/1977 | US4025940 MOS type semiconductor device |
05/24/1977 | US4025910 Solid-state camera employing non-volatile charge storage elements |
05/24/1977 | US4025890 Semiconductor piezoresistive strain transducer |
05/24/1977 | US4025802 Capacitance circuit |
05/24/1977 | US4025364 Process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases |
05/17/1977 | US4024569 Semiconductor ohmic contact |
05/17/1977 | US4024568 Transistor with base/emitter encirclement configuration |
05/17/1977 | US4024566 Deep diode device |
05/17/1977 | US4024564 Semiconductor device having at least one PN junction and channel stopper surrounder by a protecture conducting layer |
05/17/1977 | US4024563 Doped oxide buried channel charge-coupled device |
05/17/1977 | US4024561 Field effect transistor monitors |
05/17/1977 | US4023260 Method of manufacturing semiconductor diodes for use in millimeter-wave circuits |
05/17/1977 | US4023258 Method of manufacturing semiconductor diodes for use in millimeter-wave circuits |
05/10/1977 | US4023195 MOS field-effect transistor structure with mesa-like contact and gate areas and selectively deeper junctions |
05/10/1977 | US4023053 Variable capacity diode device |
05/10/1977 | US4022931 Process for making semiconductor device |
05/03/1977 | US4021837 Symmetrical semiconductor switch having carrier lifetime degrading structure |
05/03/1977 | US4021835 Semiconductor device and a method for fabricating the same |
05/03/1977 | US4021789 Self-aligned integrated circuits |
05/03/1977 | US4021787 Information storage circuit employing MNOS transistors |
05/03/1977 | US4021786 Memory cell circuit and semiconductor structure therefore |
05/03/1977 | US4021751 Field effect transistor amplifier |
05/03/1977 | US4021687 Transistor circuit for deep saturation prevention |
05/03/1977 | US4021682 Charge detectors for CCD registers |
05/03/1977 | US4020830 Field effect transistor |
04/26/1977 | US4019248 High voltage junction semiconductor device fabrication |
04/26/1977 | US4019247 Fabrication of a charge-coupled device |
04/19/1977 | US4019198 Non-volatile semiconductor memory device |
04/19/1977 | US4019197 Semiconductor floating gate storage device with lateral electrode system |
04/19/1977 | US4019195 Semi-conductor device capable of supporting high amperages of inverse current |
04/19/1977 | US4019152 Bias circuit for junction diodes |
04/19/1977 | US4018627 Method for fabricating semiconductor devices utilizing oxide protective layer |
04/12/1977 | US4017890 Intermetallic compound layer in thin films for improved electromigration resistance |
04/12/1977 | US4017888 Non-volatile metal nitride oxide semiconductor device |
04/12/1977 | US4017887 Method and means for passivation and isolation in semiconductor devices |
04/12/1977 | US4017885 Large value capacitor |
04/12/1977 | US4017884 Magnetic field sensitive diode and method of making same |
04/12/1977 | US4017883 Single-electrode charge-coupled random access memory cell with impurity implanted gate region |
04/12/1977 | US4017882 Transistor having integrated protection |
04/12/1977 | US4016644 Methods of fabricating low pressure silicon transducers |
04/12/1977 | US4016643 Overlay metallization field effect transistor |
04/05/1977 | US4016596 High performance integrated bipolar and complementary field effect transistors |
04/05/1977 | US4016594 Semiconductor device and method of manufacturing the device |
04/05/1977 | US4016593 Bidirectional photothyristor device |
04/05/1977 | US4016592 Light-activated semiconductor-controlled rectifier |
04/05/1977 | US4016591 Semiconductor controlled rectifier |
04/05/1977 | US4016589 Photosensitive, voltage responsive, rectifier |
04/05/1977 | US4016588 Non-volatile semiconductor memory device |
04/05/1977 | US4016587 Raised source and drain IGFET device and method |
04/05/1977 | US4016586 Photovoltaic heterojunction device employing a wide bandgap material as an active layer |
04/05/1977 | US4016017 Integrated circuit isolation structure and method for producing the isolation structure |
04/05/1977 | US4016016 Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices |
04/05/1977 | US4016007 Semiconductors |
03/29/1977 | US4015282 Solid state amplifier device and circuit therefor |
03/29/1977 | US4015281 MIS-FETs isolated on common substrate |
03/29/1977 | US4015279 Edgeless transistor |
03/29/1977 | US4015278 Field effect semiconductor device |
03/29/1977 | US4015175 Discrete, fixed-value capacitor |
03/29/1977 | US4015159 Semiconductor integrated circuit transistor detector array for channel electron multiplier |
03/29/1977 | US4014718 Method of making integrated circuits free from the formation of a parasitic PNPN thyristor |
03/22/1977 | US4014037 Semiconductor device |
03/22/1977 | US4014036 Single-electrode charge-coupled random access memory cell |
03/22/1977 | US4013979 Cmos oscillator with first and second mos transistors of opposed type integrated on the same substrate |
03/22/1977 | US4013897 Information signal transfer method and a charge transfer |
03/22/1977 | US4013489 Process for forming a low resistance interconnect in MOS N-channel silicon gate integrated circuit |
03/22/1977 | US4013485 Process for eliminating undesirable charge centers in MIS devices |
03/22/1977 | US4013484 High density CMOS process |
03/22/1977 | US4013483 Method of adjusting the threshold voltage of field effect transistors |
03/15/1977 | US4012764 Semiconductor integrated circuit device |
03/15/1977 | US4012763 Semiconductor device having insulator film with different prescribed thickness portions |
03/15/1977 | US4012762 Semiconductor field effect device having oxygen enriched polycrystalline silicon |
03/15/1977 | US4012761 Self-protected semiconductor device |
03/15/1977 | US4012759 Bulk channel charge transfer device |
03/15/1977 | US4012758 Bulk channel charge transfer device with bias charge |
03/15/1977 | US4012643 Noise elimination circuit |
03/15/1977 | US4012587 Solid state image sensor |
03/15/1977 | US4012417 Process for preparing pyrano[3,4-b]indole or thio pyrano[3,4-b]indole derivatives |
03/15/1977 | US4011745 Semiconductor sensors |
03/15/1977 | US4011653 Method for manufacturing a semiconductor integrated circuit including an insulating gate type semiconductor transistor |
03/08/1977 | US4011582 Deep power diode |
03/08/1977 | US4011581 MOSFET antiparasitic layer |
03/08/1977 | US4011580 Integrated circuit |