Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
---|
12/07/1976 | US3996077 Method of manufacturing a semiconductor device having an insulation layer sunk in a semiconductor body and semiconductor device manufactured according to said method |
11/30/1976 | US3995306 Reverse conduction thyristor |
11/30/1976 | US3995305 Thyristor |
11/30/1976 | US3995301 Aluminum-platinum |
11/30/1976 | US3995172 Enhancement-and depletion-type field effect transistors connected in parallel |
11/30/1976 | US3994758 Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection |
11/23/1976 | US3994011 High withstand voltage-semiconductor device with shallow grooves between semiconductor region and field limiting rings |
11/23/1976 | US3994009 Stress sensor diaphragms over recessed substrates |
11/23/1976 | US3993991 Device for driving or energizing a display device |
11/16/1976 | US3992716 Method and apparatus for propagatng potential inversion wells |
11/16/1976 | US3992715 Low-noise thermo-ionic injection diode |
11/16/1976 | US3992701 Non-volatile memory cell and array using substrate current |
11/16/1976 | US3992677 Muting circuit |
11/16/1976 | US3992232 Method of manufacturing semiconductor device having oxide isolation structure and guard ring |
11/02/1976 | US3990099 Planar Trapatt diode |
11/02/1976 | US3990098 Structure capable of forming a diode and associated conductive path |
11/02/1976 | US3990095 Selenium rectifier having hexagonal polycrystalline selenium layer |
11/02/1976 | US3990092 Resistance element for semiconductor integrated circuit |
11/02/1976 | US3990091 Low forward voltage drop thyristor |
11/02/1976 | US3990090 Semiconductor controlled rectifier |
11/02/1976 | US3989956 Charge transfer binary counter |
11/02/1976 | US3989953 Storage element for a digital permanent storage (memory system) |
10/26/1976 | US3988773 Self-registered surface charge receive and regeneration devices and methods |
10/26/1976 | US3988772 Current isolation means for integrated power devices |
10/26/1976 | US3988771 Spatial control of lifetime in semiconductor device |
10/26/1976 | US3988770 Deep finger diodes |
10/26/1976 | US3988769 High voltage diodes |
10/26/1976 | US3988768 Deep diode silicon controlled rectifier |
10/26/1976 | US3988767 High voltage deep diode power semiconductor switch |
10/26/1976 | US3988766 Multiple P-N junction formation with an alloy droplet |
10/26/1976 | US3988765 Multiple mesa semiconductor structure |
10/26/1976 | US3988764 Deep diode solid state inductor coil |
10/26/1976 | US3988762 Minority carrier isolation barriers for semiconductor devices |
10/26/1976 | US3988761 Field-effect transistor and method of making the same |
10/26/1976 | US3988760 Deep diode bilateral semiconductor switch |
10/26/1976 | US3988759 Thermally balanced PN junction |
10/26/1976 | US3988757 Deep diode zeners |
10/26/1976 | US3988692 Gain control circuits |
10/26/1976 | US3988598 Multipurpose semiconductor circuits utilizing a novel semiconductor device |
10/26/1976 | US3987538 Method of making devices having closely spaced electrodes |
10/19/1976 | US3987480 III-V semiconductor device with OHMIC contact to high resistivity region |
10/19/1976 | US3987479 Semiconductor power component |
10/19/1976 | US3987478 Composite type semiconductor and preparation thereof |
10/19/1976 | US3987477 Beta compensated integrated current mirror |
10/19/1976 | US3987476 Thyristor |
10/19/1976 | US3987475 Nondestructive charge sensing in a charge coupled device |
10/19/1976 | US3987474 Non-volatile charge storage elements and an information storage apparatus employing such elements |
10/19/1976 | US3987312 Device for the selective storage of charges and for selective charge shift in both directions with a charge-coupled charge shift arrangement |
10/19/1976 | US3987216 Method of forming schottky barrier junctions having improved barrier height |
10/19/1976 | US3986904 Process for fabricating planar scr structure |
10/19/1976 | US3986903 Mosfet transistor and method of fabrication |
10/12/1976 | US3986200 Semiconductor structure and method |
10/12/1976 | US3986198 Introducing signal at low noise level to charge-coupled circuit |
10/12/1976 | US3986197 Charge coupled transfer arrangement in which majority carriers are used for the charge transfer |
10/12/1976 | US3986196 Through-substrate source contact for microwave FET |
10/12/1976 | US3986192 High efficiency gallium arsenide impatt diodes |
10/12/1976 | US3986180 Depletion mode field effect transistor memory system |
10/12/1976 | US3986142 Avalanche semiconductor amplifier |
10/12/1976 | US3986059 Electrically pulsed charge regenerator for semiconductor charge coupled devices |
10/12/1976 | US3985591 Method of manufacturing parallel gate matrix circuits |
10/12/1976 | US3985449 Semiconductor color detector |
10/05/1976 | US3984859 High withstand voltage semiconductor device with shallow grooves between semiconductor region and field limiting rings with outer mesa groove |
10/05/1976 | US3984858 Semiconductor components |
10/05/1976 | US3984822 Double polycrystalline silicon gate memory device |
10/05/1976 | US3984261 Ohmic contact |
10/05/1976 | US3983620 Self-aligned CMOS process for bulk silicon and insulating substrate device |
09/28/1976 | US3983574 Semiconductor devices having surface state control |
09/28/1976 | US3983409 Bucket-brigade circuit |
09/28/1976 | US3983408 Bucket-brigade circuit |
09/28/1976 | US3983264 Metal-semiconductor ohmic contacts and methods of fabrication |
09/28/1976 | US3983076 Chalcogenides |
09/28/1976 | US3982908 Nickel-gold-cobalt contact for silicon devices |
09/21/1976 | US3982270 Deep diode varactors |
09/21/1976 | US3982269 Semiconductor devices and method, including TGZM, of making same |
09/21/1976 | US3982268 Deep diode lead throughs |
09/21/1976 | US3982267 Pin diode with a thick intrinsic zone and a device comprising such a diode |
09/21/1976 | US3982266 Integrated injection logic having high inverse current gain |
09/21/1976 | US3982264 Junction gated field effect transistor |
09/21/1976 | US3982263 Integrated circuit device comprising vertical channel FET resistor |
09/21/1976 | US3982262 Semiconductor indicating instrument |
09/21/1976 | US3982261 Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices |
09/21/1976 | US3981073 Lateral semiconductive device and method of making same |
09/14/1976 | US3980902 Charge injectors for CCD registers |
09/14/1976 | US3980900 Multipurpose switching circuits utilizing a novel semiconductor device |
09/14/1976 | US3980508 Process of producing semiconductor device |
09/14/1976 | US3980507 Method of making a semiconductor device |
09/14/1976 | US3980505 Process of making a filament-type memory semiconductor device |
09/07/1976 | US3979769 Gate modulated bipolar transistor |
09/07/1976 | US3979767 Multilayer P-N junction semiconductor switching device having a low resistance path across said P-N junction |
09/07/1976 | US3979766 Semiconductor device |
09/07/1976 | US3979765 Silicon gate MOS device and method |
09/07/1976 | US3979629 Semiconductor with surface insulator having immobile charges |
09/07/1976 | US3979613 Multi-terminal controlled-inversion semiconductor devices |
09/07/1976 | US3979612 V-groove isolated integrated circuit memory with integral pinched resistors |
09/07/1976 | US3979271 Deposition of solid semiconductor compositions and novel semiconductor materials |
09/07/1976 | US3979230 Method of making isolation grids in bodies of semiconductor material |
09/07/1976 | US3978577 Fixed and variable threshold N-channel MNOSFET integration technique |
08/31/1976 | US3978517 Titanium-silver-palladium metallization system and process therefor |
08/31/1976 | US3978515 Integrated injection logic using oxide isolation |
08/31/1976 | US3978514 Diode-integrated high speed thyristor |