Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2003
06/11/2003CN1423836A Junction field-effect transistor and method of manufacture thereof
06/11/2003CN1423834A UV prtreatment process for ultra-thin oxynitride for formation of silicon nitridefilms
06/11/2003CN1423832A Method for establishing ultra-thin gate insulator using anneal in ammonia
06/11/2003CN1423420A Multi-threshold MIS integrated circuit device and circuit designing method
06/11/2003CN1423343A Semiconductor of storage unit storage unit storing multiple places and driving method thereof
06/11/2003CN1423339A Integrated circuit with double floated gate-pole storage crystal cell and manufacturing method thereof
06/11/2003CN1423318A Semiconductor device and producing method thereof
06/11/2003CN1423306A Method for making semiconductor with double-grid oxide layer
06/11/2003CN1423305A Method for making semiconductor device
06/11/2003CN1111313C Bipolar heterojunction transistor
06/10/2003US6577533 Nonvolatile semiconductor memory and method of manufacturing the same
06/10/2003US6577522 Semiconductor memory device including an SOI substrate
06/10/2003US6577386 Method and apparatus for activating semiconductor impurities
06/10/2003US6577374 Active matrix substrate having column spacers integral with protective layer and process for fabrication thereof
06/10/2003US6577200 High-frequency semiconductor device
06/10/2003US6577010 Stepped photoresist profile and opening formed using the profile
06/10/2003US6577006 Comprising a stable ohmic electrode which is not easily stripped and can be formed in a simple process on a nitride based semiconductor
06/10/2003US6577005 Fine protuberance structure and method of production thereof
06/10/2003US6576974 Bipolar junction transistors for on-chip electrostatic discharge protection and methods thereof
06/10/2003US6576973 N-type silicon carbide layer of low doping level formed by epitaxy on a silicon carbide substrate of high doping level, in which the periphery of the active area of the diode is coated with a P-type epitaxial silicon carbide layer
06/10/2003US6576968 Sensor
06/10/2003US6576967 Semiconductor structure and process for forming a metal oxy-nitride dielectric layer
06/10/2003US6576966 Field-effect transistor having multi-part channel
06/10/2003US6576965 Semiconductor device with lightly doped drain layer
06/10/2003US6576964 Dielectric layer for a semiconductor device having less current leakage and increased capacitance
06/10/2003US6576956 Semiconductor integrated circuit and method of manufacturing the same
06/10/2003US6576955 Insulated gate field effect semiconductor device
06/10/2003US6576954 Trench MOSFET formed using selective epitaxial growth
06/10/2003US6576953 Vertical semiconductor component with source-down design and corresponding fabrication method
06/10/2003US6576952 Trench DMOS structure with peripheral trench with no source regions
06/10/2003US6576951 Four-terminal system for reading the state of a phase qubit
06/10/2003US6576950 EEPROM type non-volatile memory cell and corresponding production method
06/10/2003US6576948 Integrated circuit configuration and method for manufacturing it
06/10/2003US6576943 Semiconductor device for reducing leak currents and controlling a threshold voltage and using a thin channel structure
06/10/2003US6576937 Semiconductor device and power amplifier using the same
06/10/2003US6576936 Bipolar transistor with an insulated gate electrode
06/10/2003US6576935 Bidirectional semiconductor device and method of manufacturing the same
06/10/2003US6576929 Silicon carbide semiconductor device and manufacturing method
06/10/2003US6576927 Semiconductor device and GaN-based field effect transistor for use in the same
06/10/2003US6576926 Semiconductor device and fabrication method thereof
06/10/2003US6576925 Thin film transistor, liquid crystal display panel, and manufacturing method of thin film transistor
06/10/2003US6576924 Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate
06/10/2003US6576899 Direct detection of low-energy charged particles using metal oxide semiconductor circuitry
06/10/2003US6576553 Chemical mechanical planarization of conductive material
06/10/2003US6576537 Flash memory cell and method for fabricating a flash memory cell
06/10/2003US6576532 Semiconductor device and method therefor
06/10/2003US6576516 High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon
06/10/2003US6576515 Method of forming transistor gate
06/10/2003US6576512 Method of manufacturing an EEPROM device
06/10/2003US6576506 Electrostatic discharge protection in double diffused MOS transistors
06/10/2003US6576502 Method for forming LDD/offset structure of thin film transistor
06/10/2003US6576403 Method for forming a thin film transistor with a lightly doped drain structure
06/10/2003US6576152 Dry etching method
06/10/2003US6575038 Pressure sensor and method for assembling the same
06/05/2003WO2003047163A2 Semiconductor device having a byte-erasable eeprom memory
06/05/2003WO2003047009A1 Electrochemical device
06/05/2003WO2003047001A1 Self-alignment of seperated regions in a lateral mosfet structure of an integrated circuit
06/05/2003WO2003047000A1 Semiconductor device and production method therefor
06/05/2003WO2003046999A1 Semiconductor device and manufacturing method thereof
06/05/2003WO2003046998A1 High temperature processing compatible metal gate electrode for pfets and method for fabrication
06/05/2003WO2003046997A1 Trench mosfet device with improved on-resistance
06/05/2003WO2003046996A1 Vertical mosfets having crossing trench-based gate electrodes that extend into deeper trench-based source electrodes and methods of forming same
06/05/2003WO2003046995A1 Matrix-addressable apparatus with one or more memory devices
06/05/2003WO2003046974A2 Capacitor and a method for producing a capacitor
06/05/2003WO2003046971A1 Method for forming an oxynitride spacer for a metal gate electrode using a pecvd process with a silicon-starving atmosphere
06/05/2003WO2003046967A2 Method of forming a doped region in a semiconductor body comprising a step of amorphization by irradiation
06/05/2003WO2003046964A1 Active matrix thin film transistor array backplane
06/05/2003WO2003046948A2 Bipolar semiconductor device and method for production thereof
06/05/2003WO2003046947A2 Bipolar transistor
06/05/2003WO2003046921A1 A method for making self-registering non-lithographic transistors with ultrashort channel lengths
06/05/2003WO2003046588A1 Method for detecting the operability of a number of identical zener diodes that are connected in parallel to one another and to a solenoid
06/05/2003WO2003045837A2 Stress control of semiconductor microstructures for thin film growth
06/05/2003WO2003045539A1 Thin film membrane structure
06/05/2003WO2003030262A3 Silicon-on-insulator high voltage device structure
06/05/2003WO2003015172A3 Method of manufacturing a non-volatile memory
06/05/2003WO2003014809A3 Electrostatic discharge protection for pixellated electronic device
06/05/2003WO2003007381A3 Low voltage threshold dynamic biasing
06/05/2003WO2002103800A3 Integration of two memory types
06/05/2003WO2002051741A3 Method for producing a semiconductor component having a movable mass in particular, and semiconductor component produced according to this method
06/05/2003WO2002037570A3 Semiconductor device and method of making same
06/05/2003US20030105365 Comprise at least one substituent selected from electron-donating substituents, halogen substituents, and combinations thereof; organic thin-film transistors
06/05/2003US20030104707 System and method for improved thin dielectric films
06/05/2003US20030104706 Wet-etching method and method for manufacturing semiconductor device
06/05/2003US20030104705 Method of forming ohmic electrode
06/05/2003US20030104694 Method of fabricating a nickel silicide on a substrate
06/05/2003US20030104684 Iridium conductive electrode/barrier structure and method for same
06/05/2003US20030104682 Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus
06/05/2003US20030104681 Patterned SOI regions on semiconductor chips
06/05/2003US20030104679 Backside metallization on microelectronic dice having beveled sides for effective thermal contact with heat dissipation devices
06/05/2003US20030104674 Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same
06/05/2003US20030104671 Semiconductor integrated circuit device and method of manufacturing the same
06/05/2003US20030104668 Capacitor structure of semiconductor device and method for forming the same
06/05/2003US20030104666 Method for forming dielectric stack without interfacial layer
06/05/2003US20030104665 Nonvolatile memory device and method of manufacturing same
06/05/2003US20030104664 Silicon film, semiconductor device, and process for forming silicon films
06/05/2003US20030104662 Thin film semiconductor device, production process and information displays
06/05/2003US20030104661 Semiconductor device and fabrication method therefor
06/05/2003US20030104660 Semiconductor device
06/05/2003US20030104659 Method of fabricating semiconductor device
06/05/2003US20030104648 Micromechanical component and method of manufacturing a micromechanical component
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