Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2003
06/03/2003US6573569 Trench MOSFET with low gate charge
06/03/2003US6573568 ESD protection devices and methods for reducing trigger voltage
06/03/2003US6573564 Device having high mass production performance and high reliability and reproducibility by simple fabrication steps, in a constitution of a semiconductor device of a bottom gate type formed by a semiconductor layer having a crystal
06/03/2003US6573563 SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs
06/03/2003US6573562 First conductivity type, a transistor (120) at least partially located in the semiconductor substrate, and a switching circuit transistor includes (i) a first doped region in the first portion of the semiconductor substrate and having the
06/03/2003US6573561 Vertical MOSFET with asymmetrically graded channel doping
06/03/2003US6573560 A trench MOS-gated device having an upper surface includes a substrate having an upper layer of doped monocrystalline semiconductor material of a first conduction type. A gate trench in the upper layer has sidewalls and a floor lined with
06/03/2003US6573559 Transistor and method of manufacturing the same
06/03/2003US6573558 High-voltage vertical transistor with a multi-layered extended drain structure
06/03/2003US6573557 EEPROM cell having reduced cell area
06/03/2003US6573555 Source side injection programming and tip erasing P-channel split gate flash memory cell
06/03/2003US6573553 Semiconductor device and method for fabricating the same
06/03/2003US6573550 Semiconductor with high-voltage components and low-voltage components on a shared die
06/03/2003US6573541 Charge coupled device with channel well
06/03/2003US6573540 Semiconductor device and method for fabricating the same
06/03/2003US6573536 Light emitting diode light source
06/03/2003US6573534 Silicon carbide semiconductor device
06/03/2003US6573533 Semiconductor device, semiconductor gate array, electro-optical device, and electronic equipment
06/03/2003US6573532 Thin film transistor array panel for liquid crystal display
06/03/2003US6573529 Two Field Effect Transistors with different device characteristics, a common input terminal, and output terminals A signal transmitting FET has a gate width of 500 mu m and a signal receiving FET has a gate width of 400 mu m. A resistor
06/03/2003US6573528 Detector diode with internal calibration structure
06/03/2003US6573527 Quantum semiconductor device including quantum dots and a fabrication process thereof
06/03/2003US6573526 Single electron tunneling transistor having multilayer structure
06/03/2003US6573504 Infrared sensor and manufacturing method thereof
06/03/2003US6573202 Four-terminal system for reading the state of a phase qubit
06/03/2003US6573197 Thermally stable poly-Si/high dielectric constant material interfaces
06/03/2003US6573195 Method for manufacturing a semiconductor device by performing a heat-treatment in a hydrogen atmosphere
06/03/2003US6573172 Methods for improving carrier mobility of PMOS and NMOS devices
06/03/2003US6573169 Highly conductive composite polysilicon gate for CMOS integrated circuits
06/03/2003US6573163 Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films
06/03/2003US6573162 Laser irradiation apparatus and method of fabricating a semiconductor device
06/03/2003US6573161 Thin film semiconductor device fabrication process
06/03/2003US6573149 Semiconductor device having a metal gate with a work function compatible with a semiconductor device
06/03/2003US6573146 Methods of manufacturing complementary bipolar transistors
06/03/2003US6573145 Process for producing an MOS field effect transistor with a recombination zone
06/03/2003US6573144 Method for manufacturing a semiconductor device having lateral MOSFET (LDMOS)
06/03/2003US6573143 Trench transistor structure and formation method
06/03/2003US6573141 In-situ etch and pre-clean for high quality thin oxides
06/03/2003US6573140 Process for making a dual bit memory device with isolated polysilicon floating gates
06/03/2003US6573139 Method of fabricating cell of flash memory device
06/03/2003US6573134 Dual metal gate CMOS devices and method for making the same
06/03/2003US6573132 Method for fabricating a semiconductor device having contacts self-aligned with a gate electrode thereof
06/03/2003US6573130 Process for manufacturing electronic devices having non-salicidated non-volatile memory cells, non-salicidated HV transistors, and salicidated-junction LV transistors
06/03/2003US6573129 Gate electrode formation in double-recessed transistor by two-step etching
06/03/2003US6573128 Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
06/03/2003US6573127 Thin-film transistor and method of making same
06/03/2003US6573121 Semiconductor device, method for fabricating the semiconductor device, lead frame and method for producing the lead frame
06/03/2003US6573098 Nucleic acid libraries
06/03/2003US6571629 Micromechanical spring structure, in particular, for a rotation rate sensor
05/2003
05/30/2003WO2003044878A2 Polymer material having carrier transport property, and organic thin film element, electronic device, and conductor line which use same
05/30/2003WO2003044869A1 Transistor and semiconductor memory comprising it
05/30/2003WO2003044868A1 Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus
05/30/2003WO2003044867A1 Thick-film semiconductor device and its manufacturing method
05/30/2003WO2003044866A1 Trench mosfet device with polycrystalline silicon source contact structure
05/30/2003WO2003044865A1 Trench mosfet having low gate charge
05/30/2003WO2003044864A1 Semiconductor Devices
05/30/2003WO2003044861A1 Heterojunction semiconductor device and method of manufacturing such device
05/30/2003WO2003044860A1 Method of forming ultra shallow junctions
05/30/2003WO2003044859A1 Multi-chip circuit module and method for producing the same
05/30/2003WO2003044856A1 Protective layer in memory device and method therefor
05/30/2003WO2003044853A2 Substrate contact in soi and method therefor
05/30/2003WO2003044847A1 Method of forming narrow trenches in semiconductor substrates
05/30/2003WO2003044846A1 Method for forming trench mosfet device with low parasitic resistance
05/30/2003WO2003044839A2 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition
05/30/2003WO2003044833A2 Method for limiting divot formation in post shallow trench isolation processes
05/30/2003WO2003044762A1 Active matrix substrate, electro-optical apparatus, and electronic device
05/30/2003WO2003043810A2 Nanocrystal structures
05/30/2003WO2003017374A3 Memory cell
05/30/2003WO2003015248A3 Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same
05/30/2003WO2003007398A9 Progressive aligned deposition
05/30/2003WO2003005440A3 Non-volatile memory
05/30/2003WO2002101834A3 An intermediate manufacture for a dual gate logic device
05/30/2003WO2002086970A3 Semiconductor device and method of manufacturing the same
05/30/2003WO2002078091A3 Field effect transistor structure and method of manufacture
05/30/2003WO2002045167A3 Thin films for magnetic devices
05/30/2003CA2467005A1 Nanocrystal structures
05/29/2003US20030101037 Simulation apparatus and simulation method
05/29/2003US20030100194 Method of manufacturing semiconductor device
05/29/2003US20030100193 Method for forming a dielectric layer in a semiconductor device
05/29/2003US20030100189 Method for increasing the capacity of an integrated circuit device
05/29/2003US20030100175 Low dielectric constant material, process for preparing the same, insulating film comprising the same and semiconductor device
05/29/2003US20030100173 Method of manufacturing semiconductor device
05/29/2003US20030100169 Laser treatment device, laser treatment method, and semiconductor device fabrication method
05/29/2003US20030100167 Manufacturing method of semiconductor device
05/29/2003US20030100165 Use of selective oxidation to improve LDMOS power transistors
05/29/2003US20030100161 Manufacturing method for semiconductor device
05/29/2003US20030100157 Flash memory with protruded floating gate
05/29/2003US20030100155 Method for fabricating semiconductor devices having dual gate oxide layers
05/29/2003US20030100154 Method for enhancing the electric connection between a power electronic device and its package
05/29/2003US20030100153 Method of manufacturing a semiconductor memory, and method of manufacturing a semiconductor device comprising the semiconductor memory
05/29/2003US20030100152 Semiconductor device and method for manufacturing the same
05/29/2003US20030100151 Method of manufacturing a semiconductor device
05/29/2003US20030100150 Semiconductor device and manufacturing method thereof
05/29/2003US20030100136 Thin film membrane structure
05/29/2003US20030099132 Semiconductor memory device including bit select circuit
05/29/2003US20030098935 Liquid crystal display having reduced flicker
05/29/2003US20030098748 Frequency variable oscillation circuit
05/29/2003US20030098640 Hollow graphene sheet structure, electrode structure, process for the production thereof, and device thus produced
05/29/2003US20030098632 Matrix type piezoelectric/electrostrictive device and manufacturing method thereof
05/29/2003US20030098491 Semiconductor device with trench isolation and fabrication method thereof
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