Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2004
01/21/2004CN1469487A 半导体器件 Semiconductor devices
01/21/2004CN1469483A Semiconductor storing device and semiconductor device
01/21/2004CN1469476A Semiconductor integrated circuit apparatus
01/21/2004CN1469442A Method for forming high voltage junction in semiconductor device
01/21/2004CN1469439A Deposition method for dielectric layer
01/21/2004CN1469429A Method for producing thin film semiconductor and method for forming resist pattern thereof
01/21/2004CN1469100A Mechanical shape variable detection sensor
01/21/2004CN1135700C Quantum computer, initial method and method for testing nuclear spin
01/21/2004CN1135634C High speed/high performance metallic oxide semiconductor transistor and producing method thereof
01/21/2004CN1135633C Diode with first diode contacting with secondry diode
01/21/2004CN1135632C Linked-grid transistor
01/21/2004CN1135631C Method for driving solid image sensor
01/21/2004CN1135630C Semiconductor device with high-voltage CMOS structure and method of fabricating the same
01/21/2004CN1135629C Semiconductor device
01/21/2004CN1135628C Non-volatile storage cell
01/21/2004CN1135625C Nonvolatile semiconductor device and producing method thereof
01/21/2004CN1135624C Semiconductor device and producing method thereof
01/21/2004CN1135623C Semiconductor dvice having N and P field effect transistor on the same substrate
01/21/2004CN1135622C Semiconductor device
01/21/2004CN1135620C Protecting circuit for semiconductor circuit
01/21/2004CN1135615C Method for producing semiconductor device
01/21/2004CN1135493C Semiconductor device with deactive film
01/21/2004CN1135425C Method for producing display device
01/20/2004US6681201 Simulation method of breakdown
01/20/2004US6680770 Liquid crystal display device and repair process for the same wherein TFT having particular electrodes
01/20/2004US6680641 Bidirectional bipolar transistor switch arrangement
01/20/2004US6680577 EL display device and electronic apparatus
01/20/2004US6680538 Semiconductor device for suppressing detachment of conductive layer
01/20/2004US6680524 Semiconductor device and method for fabricating the same
01/20/2004US6680522 Semiconductor device with reduced electrical variation
01/20/2004US6680516 Structure comprising semiconductor substrate, gate layer, metallic layer, and etch-stop layer; distance between substrate and top of etch-stop layer is gate stack height, which is at most 2700 angstroms
01/20/2004US6680515 Lateral high voltage transistor having spiral field plate and graded concentration doping
01/20/2004US6680513 Semiconductor device
01/20/2004US6680510 Non-volatile memory device having a cell transistor and a non-cell transistor
01/20/2004US6680508 Vertical floating gate transistor
01/20/2004US6680506 Method for forming a flash memory cell having contoured floating gate surface
01/20/2004US6680505 Semiconductor storage element
01/20/2004US6680504 Method for constructing a metal oxide semiconductor field effect transistor
01/20/2004US6680503 Field-effect transistor structure with an insulated gate
01/20/2004US6680497 Interstitial diffusion barrier
01/20/2004US6680496 Back-biasing to populate strained layer quantum wells
01/20/2004US6680495 Silicon wafer with embedded optoelectronic material for monolithic OEIC
01/20/2004US6680494 Ultra high speed heterojunction bipolar transistor having a cantilevered base
01/20/2004US6680488 Semiconductor device
01/20/2004US6680487 Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
01/20/2004US6680486 Insulated gate field effect transistor and its manufacturing method
01/20/2004US6680485 Thin film transistors on plastic substrates
01/20/2004US6680460 Apparatus for producing a semiconductor thin film
01/20/2004US6680261 Method of reducing boron outgassing at trench power IC's oxidation process for sacrificial oxide layer
01/20/2004US6680245 Method for making both a negative differential resistance (NDR) device and a non-NDR device using a common MOS process
01/20/2004US6680244 Method for manufacturing semiconductor device
01/20/2004US6680243 Shallow junction formation
01/20/2004US6680240 Silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide
01/20/2004US6680236 Ion-implantation and shallow etching to produce effective edge termination in high-voltage heterojunction bipolar transistors
01/20/2004US6680235 Method for fabricating a selective eptaxial HBT emitter
01/20/2004US6680234 Semiconductor device having the effect that the drop in the current gain is kept to the minimum, when the substrate density is amplified and that the variation in the collector current is improved
01/20/2004US6680233 Semiconductor device formed with disposable spacer and liner using high-K material and method of fabrication
01/20/2004US6680227 Non-volatile memory device and fabrication method thereof
01/20/2004US6680225 Method for manufacturing a semiconductor memory
01/20/2004US6680224 Methods of forming and operating field effect transistors having gate and sub-gate electrodes
01/20/2004US6680130 Group 3 metal oxide and group 5 element
01/20/2004US6679997 Organic insulation film formation method
01/20/2004US6679995 Method of micromechanical manufacturing of a semiconductor element, in particular an acceleration sensor
01/20/2004CA2107602C Method of manufacturing an integrated circuit and integrated circuit obtained by this method
01/15/2004WO2004006633A2 Integrated circuit including field effect transistor and method of manufacture
01/15/2004WO2004006341A1 Heterojunction field effect transistors using silicon-germanium and silicon-carbon alloys
01/15/2004WO2004006340A1 Floating-gate semiconductor structures
01/15/2004WO2004006339A1 Tft electronic devices and their manufacture
01/15/2004WO2004006338A1 Technique for fabricating logic elements using multiple gate layers
01/15/2004WO2004006337A1 Semiconductor device and method for manufacturing same
01/15/2004WO2004006326A1 Method of transferring of a layer of strained semiconductor material
01/15/2004WO2004006322A1 Method of oxidizing member to be treated
01/15/2004WO2004006315A2 Semiconductor capacitor and mosfet fitted therewith
01/15/2004WO2004006314A1 Method for the production of a short channel field effect transistor
01/15/2004WO2004006303A2 Method for fabricating an ultra shallow junction of a field effect transistor
01/15/2004WO2004006264A2 Erasable and programmable non-volatile cell
01/15/2004WO2004006262A2 Differential floating gate nonvolatile memories
01/15/2004WO2004005593A2 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects
01/15/2004WO2004004927A2 Nanostructures and methods for manufacturing the same
01/15/2004WO2003028106B1 Rf circuits including transistors having strained material layers
01/15/2004US20040009675 Gate structure and method
01/15/2004US20040009661 Semiconductor device and method of manufacturing the same
01/15/2004US20040009651 Method for forming a flash memory by using a microcrystalline polysilicon layer as a floating gate
01/15/2004US20040009648 Single wall carbon nanotube electronic devices
01/15/2004US20040009646 Low temperature MIM capacitor for mixed-signal/RF applications
01/15/2004US20040009645 Eeprom and method of fabricating the same
01/15/2004US20040009644 Method for manufacturing channel gate type field effect transistor
01/15/2004US20040009643 Method for fabricating a high voltage power mosfet having a voltage sustaining region that includes doped columns formed by rapid diffusion
01/15/2004US20040009642 Method of fabricating non-volatile memory device having a structure of silicon-oxide-nitride-oxide-silicon
01/15/2004US20040009638 Semiconductor device
01/15/2004US20040009636 Semiconductor integrated circuit device
01/15/2004US20040009634 Method for fabricating a gate structure
01/15/2004US20040009633 Method of using high-k dielectric materials to reduce soft errors in sram memory cells, and a device comprising same
01/15/2004US20040009632 Thin film processing method and thin film processing apparatus
01/15/2004US20040009629 Electrode forming method in circuit device and chip package and multilayer board using the same
01/15/2004US20040009625 Method of fabricating an X-ray detector array element
01/15/2004US20040009621 Method of fabricating an X-ray detector array element
01/15/2004US20040008551 Non-volatile semiconductor memory device
01/15/2004US20040008541 Multiple use memory chip
01/15/2004US20040008295 Liquid crystal display device and method for producing the same