Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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01/15/2004 | US20040008294 Liquid crystal display device and method for manufacturing the same |
01/15/2004 | US20040007772 Power semiconductor device |
01/15/2004 | US20040007767 Semiconductor device and liquid jetting device using the same |
01/15/2004 | US20040007766 Semiconductor device and method for manufacturing the same |
01/15/2004 | US20040007765 Semiconductor device and method of fabricating the same |
01/15/2004 | US20040007757 Semiconductor device and manufacturing method thereof |
01/15/2004 | US20040007753 Photoelectric conversion device and manufacturing process thereof |
01/15/2004 | US20040007752 Active matrix substrate having column spacers integral with protective layer and process for fabrication thereof |
01/15/2004 | US20040007751 Magnetoresistive memory devices |
01/15/2004 | US20040007749 Assemblies displaying differential negative resistance |
01/15/2004 | US20040007748 Insulating layer is a first layer of silicon oxynitride film formed by using silane (SiH4), nitrous oxide (N2O), and hydrogen (H2), and a second film of silicon oxynitride formed by using SiH4 and N2O; thin film transistors |
01/15/2004 | US20040007747 Gate structure and method |
01/15/2004 | US20040007745 Semiconductor device haivng silicide film formed in a part of source-drain diffusion layers and method of manufacturing the same |
01/15/2004 | US20040007744 Semiconductor device having a merged region and method of fabrication |
01/15/2004 | US20040007741 Semiconductor substrate, seminconductor device, and manufacturing method thereof |
01/15/2004 | US20040007738 Self-aligned dog-bone structure for FinFET applications and methods to fabricate the same |
01/15/2004 | US20040007737 Ultra small size vertical MOSFET device and method for the manufacture thereof |
01/15/2004 | US20040007736 High-voltage semiconductor component |
01/15/2004 | US20040007735 High-voltage semiconductor component |
01/15/2004 | US20040007734 Nonvolatile semiconductor memory device |
01/15/2004 | US20040007733 Floating gate memory cell and forming method |
01/15/2004 | US20040007732 Compact nonvolatile memory using substrate hot carrier injection |
01/15/2004 | US20040007731 Semiconductor memory device and fabrication method thereof using damascene gate and epitaxial growth |
01/15/2004 | US20040007727 Semiconductor memory device and fabrication method thereof using damascene bitline process |
01/15/2004 | US20040007726 DRAM cell and space-optimized memory array |
01/15/2004 | US20040007724 Silicon on oxide (SOI); a transistor that includes an ultra-thin body epitaxial layer that forms an embedded junction with a channel that has a length dictated by an undercut under the gate stack for the transistor |
01/15/2004 | US20040007723 Trench schottky barrier diode |
01/15/2004 | US20040007722 Image sensor, method of fabricating the same, and exposure apparatus, measuring device, alignment device, and aberration measuring device using the image sensor |
01/15/2004 | US20040007721 Improved memory densities while avoiding undesirable short-channel effects such as drain-induced barrier lowering; threshold voltage roll off, and sub-threshold conduction, increased leakage and reduced carrier mobility |
01/15/2004 | US20040007717 Memory device having a transistor and one resistant element as a storing means and method for driving the memory device |
01/15/2004 | US20040007716 Versatile system for optimizing current gain in bipolar transistor structures |
01/15/2004 | US20040007715 Reducing threading defect density by reducing germanium content in Silicon germanium relaxed buffer layer on which strained silicon channel layer is formed by forming channel layer of silicon-carbon alloy containing 1.5% carbon |
01/15/2004 | US20040007714 Current mirror circuit and optical signal circuit using same |
01/15/2004 | US20040007713 Bipolar transistor and semiconductor device using same |
01/15/2004 | US20040007712 Five volt tolerant input scheme using a switched CMOS pass gate |
01/15/2004 | US20040007705 Thin film transistor array panel including storage electrode |
01/15/2004 | US20040007704 Transflective liquid crystal display device and fabricating method thereof |
01/15/2004 | US20040007177 Substrate treating device and substrate treating method, substrate flattening method |
01/15/2004 | US20040007071 Pressure sensor and method for manufacturing pressure sensor |
01/15/2004 | US20040007068 Semiconductor dynamic quantity sensor |
01/15/2004 | DE10327945A1 Halbleiterspeichervorrichtungen und Verfahren zur Herstellung derselben unter Verwendung von Seitenwandabstandshaltern Semiconductor memory devices and methods of making the same using sidewall spacers |
01/15/2004 | DE10228772A1 Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren mit Palladiumkontakten durch Verwendung von Nitrilen und Isonitrilen Reduction of the contact resistance in organic field effect transistors with palladium by using contacts of nitriles and isonitriles |
01/15/2004 | DE10227831A1 Schaltwandler Switching Converters |
01/15/2004 | DE10224201A1 Halbleiterbauelement mit Durchbruchstrompfad A semiconductor device with breakdown current path |
01/15/2004 | CA2741397A1 Nanostructures and methods for manufacturing the same |
01/15/2004 | CA2491514A1 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects |
01/14/2004 | EP1381089A2 Polycrystalline silicon thin film used in a thin film transistor and a device using the same |
01/14/2004 | EP1381088A1 Semiconductor device |
01/14/2004 | EP1381055A2 A multiple use memory chip |
01/14/2004 | EP1380880A1 Method for manufacturing liquid crystal display |
01/14/2004 | EP1380826A2 Semiconductor pressure sensor |
01/14/2004 | EP1380825A1 Micromechanical pressure sensor and corresponding measuring arrangement |
01/14/2004 | EP1380665A1 Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom |
01/14/2004 | EP1380418A2 Semiconductor device and liquid jetting device using the same |
01/14/2004 | EP1380055A1 Semiconductor power component and corresponding production method |
01/14/2004 | EP1380054A1 Improved electroluminescent devices and displays with integrally fabricated address and logic devices fabricated by printing or weaving |
01/14/2004 | EP1380053A2 Nanoelectronic devices and circuits |
01/14/2004 | EP1380049A1 Transistors having optimized source-drain structures and methods for making the same |
01/14/2004 | EP1379884A2 Sensor |
01/14/2004 | EP0990268B1 Latch-up free power mos-bipolar transistor |
01/14/2004 | CN1468467A Thick film millimeter wave transceiver module |
01/14/2004 | CN1468450A Method for making thin-film constitution |
01/14/2004 | CN1468449A Trench dmos transistor with embedded trench schottky rectifier |
01/14/2004 | CN1468447A Non-volatile memory with source side boron implantation |
01/14/2004 | CN1468437A Method and apparatus for boosting bitlines for low vcc read |
01/14/2004 | CN1468435A Flash memory architecture employing three layer metal interconnect |
01/14/2004 | CN1467863A Semiconductor chip, semiconductor device and method for manufacturing same |
01/14/2004 | CN1467859A Thin-film semiconductor device, manufacturing method of the same and image display apparatus |
01/14/2004 | CN1467858A Power semiconductor with variable parameters |
01/14/2004 | CN1467851A Nonvolatile semiconductor memory device |
01/14/2004 | CN1467848A Memory structure and method for manufacturing the same |
01/14/2004 | CN1467847A Memory device and method for driving the memory device |
01/14/2004 | CN1467827A Improved mask ROM process and element |
01/14/2004 | CN1467809A Method and device for determining backgate characteristics |
01/14/2004 | CN1467795A Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device |
01/14/2004 | CN1467786A Field emission display device |
01/14/2004 | CN1467699A Method and related apparatus for driving an lcd monitor |
01/14/2004 | CN1467694A Active matrix type display device and method for manufacturing same |
01/14/2004 | CN1134846C High voltage semiconductor component |
01/14/2004 | CN1134841C 集成电路 IC |
01/14/2004 | CN1134836C Forming method of level surface spacing layer and device formed therefrom |
01/14/2004 | CN1134827C Semi-conductor chip with table-board structure finished by sawing method |
01/14/2004 | CN1134789C Flash EEPROM cell, method of manufacturing the same, method of programming and method of reading the same |
01/13/2004 | US6678305 Surface catalyst infra red laser |
01/13/2004 | US6678025 Liquid crystal device having metal light shielding layer with portions at different potentials |
01/13/2004 | US6678018 Simplified processing steps. |
01/13/2004 | US6677669 Semiconductor package including two semiconductor die disposed within a common clip |
01/13/2004 | US6677660 Semiconductor device having silicide film |
01/13/2004 | US6677657 High-voltage periphery |
01/13/2004 | US6677655 Silicon wafer with embedded optoelectronic material for monolithic OEIC |
01/13/2004 | US6677651 Semiconductor device and method for manufacturing the same |
01/13/2004 | US6677648 Device having a silicon oxide film containing krypton |
01/13/2004 | US6677647 Applying a conductive layer to substantially surround and encapsulate the patterned metal features |
01/13/2004 | US6677646 Method and structure of a disposable reversed spacer process for high performance recessed channel CMOS |
01/13/2004 | US6677645 Body contact MOSFET |
01/13/2004 | US6677644 Semiconductor integrated circuit having low voltage and high voltage transistors |
01/13/2004 | US6677643 Super-junction semiconductor device |
01/13/2004 | US6677642 Field effect transistor structure and method of manufacture |
01/13/2004 | US6677641 Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
01/13/2004 | US6677640 Memory cell with tight coupling |