Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2004
02/03/2004US6684699 Micromechanical device
01/2004
01/29/2004WO2004010741A1 Active matrix organic el display device and manufacturing method thereof
01/29/2004WO2004010582A1 Probabilistic calculation element, drive method thereof, and recognition device using the same
01/29/2004WO2004010512A2 Heteroatom-containing diamondoid transistors
01/29/2004WO2004010508A1 Nonvolatile semiconductor storage device and manufacturing method
01/29/2004WO2004010507A1 Method for producing a t-gate structure and an associated field effect transistor
01/29/2004WO2004010503A1 Ferroelectric gate device
01/29/2004WO2004010489A1 Vertical junction field effect transistor and method for fabricating the same
01/29/2004WO2004010488A1 Semiconductor device
01/29/2004WO2004010485A2 Semiconductor element with stress-carrying semiconductor layer and corresponding production method
01/29/2004WO2004010469A2 Atomic layer deposition of multi-metallic precursors
01/29/2004WO2004010468A2 Low temperature ozone anneal of gate and capacitor dielectrics
01/29/2004WO2004010465A2 Thin dielectric formation by steam oxidation
01/29/2004WO2004010442A1 Solid material comprising a structure of almost-completely-polarised electronic orbitals, method of obtaining same and use thereof in electronics and nanoelectronics
01/29/2004WO2003077411A3 Improved emitter turn-off thyristors and their drive circuits
01/29/2004WO2003069016A3 In-line deposition processes for circuit fabrication
01/29/2004WO2003063226A3 Oxide layer on a gaas-based semiconductor structure and method of forming the same
01/29/2004WO2003009268A3 Active matrix display devices
01/29/2004WO2002103703A3 Semiconductor device
01/29/2004WO2002071448A3 Single transistor ferroelectric memory cell
01/29/2004US20040018796 Method of manufacturing display device
01/29/2004US20040018747 Deposition method of a dielectric layer
01/29/2004US20040018737 Method of manufacturing semiconductor devices
01/29/2004US20040018708 Method for manufacturing semiconductor device
01/29/2004US20040018706 Method for forming a thermal conducting trench in a semiconductor structure
01/29/2004US20040018702 Semiconductor manufacturing method using two-stage annealing
01/29/2004US20040018701 Manufacturing method for semiconductor substrate and manufacturing method for semiconductor device
01/29/2004US20040018698 Adjustable threshold isolation transistor
01/29/2004US20040018692 Semiconductor device and manufacturing method of the same
01/29/2004US20040018690 Method of forming semiconductor device and semiconductor device
01/29/2004US20040018688 Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors
01/29/2004US20040018685 Method for manufacturing a nonvolatile memory device
01/29/2004US20040018682 Method for producing nonvolatile semiconductor memory device and the device itself
01/29/2004US20040018681 Method for forming a semiconductor device structure in a semiconductoe layer
01/29/2004US20040018674 Method of fabricating a gate dielectric layer with reduced gate tunnelling current and reduced boron penetration
01/29/2004US20040018673 High fMAX deep submicron MOSFET
01/29/2004US20040018672 Silicon on insulator (SOI) transistor and methods of fabrication
01/29/2004US20040018670 Method of manufacturing semiconductor device
01/29/2004US20040018668 Silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide
01/29/2004US20040018645 Semiconductor constructions and methods of forming semiconductor constructions
01/29/2004US20040018347 Web process interconnect in electronic assemblies
01/29/2004US20040017701 Semiconductor switching circuit device
01/29/2004US20040017365 Image display device having a drive circuit employing improved active elements
01/29/2004US20040017340 Display device and method of manufacturing the same
01/29/2004US20040017245 Gate driving circuit in power module
01/29/2004US20040017209 Capacitive dynamic quantity sensor, method for manufacturing capacitive dynamic quantity sensor, and detector including capacitive dynamic quantity sensor
01/29/2004US20040017013 Semiconductor device having a step-like section on the back side of the substrate, and method for manufacturing the same
01/29/2004US20040017012 Semiconductor chip, wiring board and manufacturing process thereof as well as semiconductor device
01/29/2004US20040016989 MEMS device integrated chip package, and method of making same
01/29/2004US20040016984 Schottky structure in GaAs semiconductor device
01/29/2004US20040016979 Semiconductor device
01/29/2004US20040016978 Electrolytic capacitor and a fabrication method therefor
01/29/2004US20040016974 Highly doped electrode for a field effect transistor and method for producing same
01/29/2004US20040016973 Gate dielectric and method
01/29/2004US20040016972 Enhanced t-gate structure for modulation doped field effect transistors
01/29/2004US20040016971 Diode and producing method thereof
01/29/2004US20040016969 Silicon on isulator (SOI) transistor and methods of fabrication
01/29/2004US20040016968 Integrated circuits
01/29/2004US20040016966 Bar-type field effect transistor and method for the production thereof
01/29/2004US20040016965 Field-effect transistor and method of producing the same
01/29/2004US20040016964 Semiconductor device with self-aligned junction contact hole and method of fabricating the same
01/29/2004US20040016963 Methods of forming vertical mosfets having trench-based gate electrodes within deeper trench-based source electrodes
01/29/2004US20040016962 Semiconductor device
01/29/2004US20040016961 Double diffused MOS transistor and method for manufacturing same
01/29/2004US20040016960 Integrated capacitor for sensing the voltage applied to a terminal of an integrated or discrete power device on a semiconductor substrate
01/29/2004US20040016959 Having high withstanding voltage and low ON resistance; having a shorten electric current passage between a second semiconductor region and a body region
01/29/2004US20040016958 Semiconductor memory cell and semiconductor memory device
01/29/2004US20040016957 Scalable stack-type dram memory structure and its manufacturing methods
01/29/2004US20040016956 Flash memory devices having a sloped trench isolation structure and methods of fabricating the same
01/29/2004US20040016955 Floating gate and fabrication method therefor
01/29/2004US20040016954 Floating gate and fabricating method thereof
01/29/2004US20040016953 Three dimensional flash cell
01/29/2004US20040016950 Multi-bit non-volatile memory cell and method therefor
01/29/2004US20040016945 P channel Rad Hard MOSFET with enhancement implant
01/29/2004US20040016944 Integrated decoupling capacitors
01/29/2004US20040016941 Hetero-junction bipolar transistor and a manufacturing method of the same
01/29/2004US20040016939 Encapsulation of a stack of semiconductor dice
01/29/2004US20040016931 Pixel electrode; transistor; semiconductor connected to pixel ; scanning line connected to transistor
01/29/2004US20040016929 Electrode for p-type sic
01/29/2004US20040016927 Thin film transistor, liquid crystal display substrate, and their manufacture methods
01/29/2004US20040016926 Thin film transistors on plastic substrates with reflective coatings for radiation protection
01/29/2004US20040016925 Display device and method for repairing line disconnection thereof
01/29/2004US20040016924 Top gate type thin film transistor
01/29/2004US20040016923 Column-row addressable electric microswitch arrays and sensor matrices employing them
01/29/2004US20040016922 Electronic devices
01/29/2004US20040016921 High peak current density resonant tunneling diode
01/29/2004US20040016920 Optical semiconductor device
01/29/2004US20040016919 Solid-state image sensor
01/29/2004US20040016395 Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate
01/29/2004DE19835891B4 Verfahren zur Herstellung eines Transistors A method of manufacturing a transistor
01/29/2004DE10330070A1 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
01/29/2004DE10230715A1 Vertikaltransistor und Verfahren zur Herstellung eines Vertikaltransistors Vertical transistor and method of manufacturing a vertical transistor
01/29/2004DE10230696A1 Verfahren zur Herstellung eines Kurzkanal-Feldeffekttransistors A process for producing a short-channel field effect transistor
01/29/2004DE10229066A1 Verfahren zur Herstellung einer Floating-Gate-Struktur für nichtflüchtige Halbleiterspeicher A method for producing a floating gate structure for non-volatile semiconductor memory
01/29/2004DE10229065A1 Verfahren zur Herstellung eines NROM-Speicherzellenfeldes A process for the preparation of a NROM memory cell array,
01/29/2004DE10229003A1 SOI-Feldeffekttransistorelement mit einem Rekombinationsgebiet und ein Verfahren zur Herstellung desselben SOI field effect transistor element thereof with a Rekombinationsgebiet and a process for preparing
01/29/2004CA2492704A1 Heteroatom-containing diamondoid transistors
01/28/2004EP1385364A2 Patterning method
01/28/2004EP1385220A2 Organic semiconductor device
01/28/2004EP1385218A1 Semiconductor device, el display device, liquid crystal display device, and calculating device