Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2004
03/16/2004US6707127 Trench schottky rectifier
03/16/2004US6707126 Semiconductor device including a PIN photodiode integrated with a MOS transistor
03/16/2004US6707120 Field effect transistor
03/16/2004US6707119 Polygonal structure semiconductor device
03/16/2004US6707118 Semiconductor-on-insulator resistor-capacitor circuit
03/16/2004US6707115 Transistor with minimal hot electron injection
03/16/2004US6707113 Semiconductor device with crenellated channel
03/16/2004US6707112 MOS transistor with ramped gate oxide thickness
03/16/2004US6707111 Hydrogen implant for buffer zone of punch-through non EPI IGBT
03/16/2004US6707110 Layout configurable electrostatic discharge device for integrated circuits
03/16/2004US6707107 Method of deforming a pattern and semiconductor device formed by utilizing deformed pattern
03/16/2004US6707106 Semiconductor device with tensile strain silicon introduced by compressive material in a buried oxide layer
03/16/2004US6707105 Semiconductor device for limiting leakage current
03/16/2004US6707104 Lateral high-breakdown-voltage transistor
03/16/2004US6707103 Low voltage rad hard MOSFET
03/16/2004US6707102 Minimized increase in input and output capacitances, reduced feedback capacitance ascribed to shield conductive film and resistance of gate electrode, improved drain breakdown voltage and current capacitance, suppressed hot electron degradation
03/16/2004US6707101 Integrated series schottky and FET to allow negative drain voltage
03/16/2004US6707100 Trench-gate semiconductor devices, and their manufacture
03/16/2004US6707099 Semiconductor device and manufacturing method thereof
03/16/2004US6707098 Device having electrically conductive first nanowire with applied layer system, second nanowire applied on layers; nanowires arranged skew with respect to one another; layers configured to store charge carriers generated by nanowires
03/16/2004US6707086 Method for forming crystalline silicon nitride
03/16/2004US6707085 Magnetic random access memory
03/16/2004US6707082 Two source/drain zones with channel region there between, first dielectric intermediate layer containing aluminum oxide disposed on surface of channel region; suppressed tunneling of compensation charges from channel region into dielectric layer
03/16/2004US6707081 Photodetector with built-in circuit
03/16/2004US6707079 Twin MONOS cell fabrication method and array organization
03/16/2004US6707076 Semiconductor element
03/16/2004US6707073 Semiconductor laser device with press-formed base and heat sink
03/16/2004US6707068 Semiconductor device and method of manufacturing the same
03/16/2004US6707067 High aperture LCD with insulating color filters overlapping bus lines on active substrate
03/16/2004US6707063 Passivation layer for molecular electronic device fabrication
03/16/2004US6707062 Transistor in a semiconductor device with an elevated channel and a source drain
03/16/2004US6707060 Column-row addressable electric microswitch arrays and sensor matrices employing them
03/16/2004US6706644 Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors
03/16/2004US6706643 UV-enhanced oxy-nitridation of semiconductor substrates
03/16/2004US6706628 Method for forming thin film and method for fabricating liquid crystal display using the same
03/16/2004US6706615 Method of manufacturing a transistor
03/16/2004US6706614 Silicon-on-insulator (SOI) transistor having partial hetero source/drain junctions fabricated with high energy germanium implantation.
03/16/2004US6706613 Methods for manufacturing stacked gates including oxide/nitride/oxide (ONO) interlayer dielectrics using pre-annealing and/or post-annealing in nitrogen
03/16/2004US6706610 Semiconductor device and fabrication process thereof
03/16/2004US6706606 Buried zener diode structure and method of manufacture
03/16/2004US6706604 Method of manufacturing a trench MOS gate device
03/16/2004US6706603 Method of forming a semiconductor device
03/16/2004US6706600 Method of fabricating a split-gate semiconductor device
03/16/2004US6706599 Multi-bit non-volatile memory device and method therefor
03/16/2004US6706597 Method for textured surfaces in floating gate tunneling oxide devices
03/16/2004US6706593 Method for manufacturing a nonvolatile semiconductor storage device
03/16/2004US6706585 Chemical vapor deposition process for fabricating layered superlattice materials
03/16/2004US6706583 High speed low noise transistor
03/16/2004US6706582 Semiconductor integrated circuit device and method of manufacturing the same
03/16/2004US6706579 Method of manufacturing semiconductor device
03/16/2004US6706578 Floating gate for memory and manufacturing method thereof
03/16/2004US6706574 Field effect transistor and method for making the same
03/16/2004US6706573 Thin film transistor and method of manufacturing the same
03/16/2004US6706572 Method for manufacturing a thin film transistor using a high pressure oxidation step
03/16/2004US6706571 Method for forming multiple structures in a semiconductor device
03/16/2004US6706569 SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
03/16/2004US6706568 Method for manufacturing a semiconductor device with a crystallized semiconductor film leveled by radiating with laser beams
03/16/2004US6706567 High voltage device having polysilicon region in trench and fabricating method thereof
03/16/2004US6706566 Methodology for electrically induced selective breakdown of nanotubes
03/16/2004US6706555 Method for filling a gap between spaced layers of a semiconductor
03/16/2004US6706552 Method for making interactive information devices with spacer elements
03/16/2004US6706545 Method of fabricating a liquid crystal display
03/16/2004US6706544 Light emitting device and fabricating method thereof
03/16/2004US6705526 Automated method of and system for dimensioning objects transported through a work environment using contour tracing, vertice detection, corner point detection, and corner point reduction methods on two-dimensional range data maps captured by an amplitude modulated laser scanning beam
03/16/2004US6705167 Accelerometer
03/16/2004US6705166 Small size, high capacitance readout silicon based MEMS accelerometer
03/16/2004CA2306212C Dual-band quantum-well infrared sensing array
03/13/2004CA2440307A1 Organic compounds having a core-shell structure
03/11/2004WO2004021450A1 Gate electrode and its fabricating method
03/11/2004WO2004021449A1 Semiconductor memory and method for manufacturing same
03/11/2004WO2004021448A1 Non-volatile semiconductor memory element and corresponding production and operation method
03/11/2004WO2004021447A1 Tft array substrate, liquid crystal display device, manufacturing methods of tft array substrate and liquid crystal display device, and electronic device
03/11/2004WO2004021446A1 Organic semiconductor device and its manufacturing method
03/11/2004WO2004021445A1 Double-gate type mos field effect transistor and production method therefor
03/11/2004WO2004021443A1 Configurable molecular switch array
03/11/2004WO2004021441A1 Semiconductor storage device and its manufacturing method
03/11/2004WO2004021429A1 Transistor structure including a metal silicide gate and channel implants and method of manufacturing the same
03/11/2004WO2004021424A1 Transistor element having an anisotropic high-k gate dielectric
03/11/2004WO2004021423A1 Method of forming nanocrystals
03/11/2004WO2004021410A2 Deterministically doped field-effect devices and methods of making same
03/11/2004WO2004021399A2 Dielectric storage memory cell (monos) having high permittivity top dielectric and method therefor
03/11/2004WO2004021362A1 Contactless uniform-tunneling separate p-well (cusp) non-volatile memory array architecture, fabrication and operation
03/11/2004WO2004020706A1 Lightly doped silicon carbide wafer and use thereof in high power devices
03/11/2004WO2004020690A1 Systems and methods for forming metal oxides using alcohols
03/11/2004WO2004020689A2 Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
03/11/2004WO2004020686A2 A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices
03/11/2004WO2004012257A9 Method and apparatus for manufacturing net shape semiconductor wafers
03/11/2004WO2004002042A3 System for digitizing transient signals
03/11/2004WO2003100864A3 High-voltage semiconductor device
03/11/2004WO2003081640A3 Strained fin fets structure and method
03/11/2004WO2003069655A3 Electronic micro component including a capacitive structure
03/11/2004WO2003065416A3 Enhanced photodetector
03/11/2004WO2003030245A3 Method for assembly of complementary-shaped receptacle site and device microstructures
03/11/2004WO2002091483A3 Improved photovoltaic device
03/11/2004US20040048491 Post thermal treatment methods of forming high dielectric layers in integrated circuit devices
03/11/2004US20040048488 Methods of forming vertical power devices having deep and shallow trenches therein
03/11/2004US20040048482 Method of forming flash memories with high coupling ratio and the structure of the same
03/11/2004US20040048481 Method for fabricating non-volatile memory device having sidewall gate structure and SONOS cell structure
03/11/2004US20040048463 Semiconductor device and manufacturing method thereof
03/11/2004US20040048457 Method for fabricating a gate electrod