Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2004
03/18/2004US20040051151 Semiconductor device of reduced gate overlap capacitance and method of manufacturing the semiconductor device
03/18/2004US20040051150 Horizontal surrounding gate mosfets
03/18/2004US20040051147 Method for making high-gain vertical bipolar junction transistor structures compatible with CMOS process
03/18/2004US20040051145 Semiconductor device with protective functions
03/18/2004US20040051143 SRAM formed on SOI substrate
03/18/2004US20040051142 Semiconductor device and method of manufacturing the same
03/18/2004US20040051141 Lateral semiconductor device
03/18/2004US20040051140 Semiconductor-on-insulator thin film transistor constructions, and methods of making semiconductor-on-insulator thin film transistor constructions
03/18/2004US20040051139 MOS transistor apparatus and method of manufacturing same
03/18/2004US20040051138 MOSFET with low leakage current and fabrication method thereof
03/18/2004US20040051136 Silicon carbide semiconductor device
03/18/2004US20040051135 Method for forming a protective buffer layer for high temperature oxide processing
03/18/2004US20040051134 Atomic layer deposition of interpoly oxides in a non-volatile memory device
03/18/2004US20040051133 Nonvolatile semiconductor memory device and process for producing the same
03/18/2004US20040051131 Semiconductor device including capacitor
03/18/2004US20040051130 Semiconductor device
03/18/2004US20040051127 Semiconductor device
03/18/2004US20040051126 Compositionally engineered CexMnyO3 and semiconductor devices based thereon
03/18/2004US20040051125 Semiconductor device and method of manufacturing it
03/18/2004US20040051124 Solid state image sensor having planarized structure under light shielding metal layer
03/18/2004US20040051123 Multi-layered gate for a CMOS imager
03/18/2004US20040051120 Semiconductor device and method of manufacturing the same
03/18/2004US20040051115 Structure for protection against radio disturbances
03/18/2004US20040051112 Method for fabricating a non-planar nitride-based heterostructure field effect transistor
03/18/2004US20040051104 Semiconductor device
03/18/2004US20040051102 Electronic circuit
03/18/2004US20040051101 Thin film transistor device, method of manufacturing the same, and thin film transistor substrate and display having the same
03/18/2004US20040051100 Storage capacitor; liquid crystal display; forming pixel zones
03/18/2004US20040051096 Organic thin film zener diodes
03/18/2004US20040050415 Tunneling-effect energy converters
03/18/2004US20040050319 Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device
03/18/2004DE19981343B4 Asymmetrically blocking semiconductor power diode
03/18/2004DE10341062A1 Gate structure of non-volatile integrated circuit memory device, comprises thermal oxidation layer defining sidewall of gate structure, oxygen diffusion barrier layer on the sidewall, and floating gate with curved sidewall portion
03/18/2004DE10338986A1 Static random access memory component has load transistor in active region lying at an angle to drive transistor active region
03/18/2004DE10337757A1 Semiconductor wafer, has asymmetric edge profile extending between inner and outer edge profiles with arc that defines inner profile at point of intersection with top surface of wafer
03/18/2004DE10337561A1 DRAM mit verbessertem Leckstromverhalten und entsprechendes Herstellungsverfahren DRAM with improved leakage current characteristics and method of manufacture
03/18/2004DE10241973A1 Epitaxial growth of an epitaxial material with silicon used in the production of semiconductor components comprises using a material containing nickel, silicon and aluminum
03/18/2004DE10241945A1 Production of a planar transistor used as a MOSFET comprises forming a semiconductor-on-isolator substrate, forming a gate insulating layer and a gate region on the substrate, forming a second insulating layer, and further processing
03/18/2004DE10241450A1 Production of a deformation sensor used in common rail diesel engines and in fuel injection engines comprises applying a sacrificial layer on or in a substrate, applying an activated layer on the sacrificial layer and further processing
03/18/2004DE10241379A1 Silicon on insulator high voltage transistor for Flash EPROM circuit has extension with doping profile which increases to a maximum from the surface of the semiconductor layer
03/18/2004DE10241172A1 Halbleiterspeicher mit vertikalen Speichertransistoren und Verfahren zu dessen Herstellung A semiconductor memory with vertical memory transistors and process for its preparation
03/18/2004DE10241171A1 Wort- und Bitleitungsanordnung für einen FINFET-Halbleiterspeicher Word and bit line for a FinFET semiconductor memory
03/18/2004DE10241170A1 Hochdichter NROM-FINFET The high-density NROM FinFET
03/18/2004DE10241156A1 Method for forming integrated pin photodiode forms doped region of one conductivity near to carrier substrate and doped region of second conductivity, further away from carrier substrate, between which is located undoped, or slightly doped
03/18/2004DE10241066A1 Halbleiterbauelement und Verfahren Semiconductor device and method
03/18/2004DE10240893A1 Production of memory cell, especially NROM memory cells, comprises implanting nitrogen into the walls of a trench before forming electrically insulating layers or producing covered spacers on the walls of the trench
03/18/2004DE10239868A1 Production of column regions in semiconductor wafers used in the production of high voltage transistors comprises depositing alternating n-doped and p-doped epitaxial layer sections on a semiconductor substrate, and further processing
03/18/2004DE10239862A1 Trench transistor cell transistor arrangement and production process for MOS power transistors and IGBTs has raised doping profile in the body region
03/18/2004DE10239861A1 Transistoreinrichtung Transistor means
03/18/2004DE10239580A1 Production of a compensation region used in semiconductors comprises forming primary doping material depots of first p-conductivity in a first region in a laterally displaced manner, and diffusing out the primary doping material depots
03/18/2004DE10238798B3 Hochfrequenzschalter High-frequency switch
03/18/2004DE10142913B4 Vertikale Transistoranordnung mit einem flexiblen, aus Kunststofffolien bestehenden Substrat und Verfahren zu deren Herstellung Vertical transistor array with a flexible substrate made of plastic films and processes for their preparation
03/18/2004CA2494527A1 Method of fabricating a self-aligned non-volatile memory cell
03/17/2004EP1398840A2 Organic semiconductor device
03/17/2004EP1398836A2 Thin film semiconductor device and manufacturing method
03/17/2004EP1398341A2 Organic compounds with core-shell structure
03/17/2004EP1397838A2 COMPLEMENTARY ACCUMULATION-MODE JFET INTEGRATED CIRCUIT TOPOLOGY USING WIDE (> 2eV) BANDGAP SEMICONDUCTORS
03/17/2004EP1397832A2 Method for isolating semiconductor devices
03/17/2004EP1397808A1 Steering gate and bit line segmentation in non-volatile memories
03/17/2004EP1397692A1 Small size, high capacitance readout silicon based mems accelerometer
03/17/2004EP1129473A4 Conductive isostructural compounds
03/17/2004EP1110067B1 Sensor with diaphragm and a plurality of switchable transducers to hit the edge
03/17/2004EP0885483A4 Push-pull power amplifier
03/17/2004EP0844672B1 Molecule dispersion type negative resistance element and method for manufacturing the same
03/17/2004EP0784868A4 Ccd charge splitter
03/17/2004CN1483223A Pulsed bistable bidirectional electronic switch
03/17/2004CN1482690A Gallium nitride group compound semiconductor photogenerator
03/17/2004CN1482685A Integrated wafer diode
03/17/2004CN1482684A Semiconductor device and a method of producing the same
03/17/2004CN1482671A Method of forming ferroelectric memory cell
03/17/2004CN1482669A Integrated circuit semiconductor element having uniform silicide junction and method for manufacturing the same
03/17/2004CN1482664A 半导体器件 Semiconductor devices
03/17/2004CN1482654A Ono interpoly dielectric for flash memory cells and method for fabricating the same
03/17/2004CN1482653A Precursor containing a nitrogen compound bound to hfcl4 for hafnium oxide layer and method for forming hafnium oxide film using the precursor
03/17/2004CN1482586A System and methods for driving an electro-optical device
03/17/2004CN1482505A Circuit structure for thin film transistor
03/17/2004CN1482504A Liquid crystal display and peripheric circuit structure and manufacturing method thereof
03/17/2004CN1482500A 液晶显示装置 The liquid crystal display device
03/17/2004CN1142596C High-voltage P-type MOS transistor and its preparing process
03/17/2004CN1142595C Semiconductor and lanthanium manganate p-n junction
03/17/2004CN1142594C Transistor of composite perovskite structure oxide membrane
03/17/2004CN1142588C Method for providing double work function doping and protection insulation cap
03/17/2004CN1142586C Semiconductor integrated circuit device and process for manufacturing the same
03/17/2004CN1142585C Method of manufacturing thin film transistor
03/17/2004CN1142437C Method for producing acceleration test components
03/16/2004US6708316 System for and method of designing and manufacturing a semiconductor device
03/16/2004US6707742 Nonvolatile semiconductor memory device
03/16/2004US6707719 Nonvolatile semiconductor memory device with double data storage circuit for writing and write-verifying multi-state memory cells
03/16/2004US6707716 Non-volatile semiconductor memory device
03/16/2004US6707695 Nonvolatile semiconductor memory device
03/16/2004US6707614 Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
03/16/2004US6707513 Active matrix substrate and manufacturing method thereof
03/16/2004US6707512 Liquid crystal display units with data line being formed of molybdenum alloy having chromium content
03/16/2004US6707495 Solid-state imaging device and a method of reading a signal charge in a solid-state imaging device which can reduce smear and can provide an excellent image characteristic
03/16/2004US6707160 Semiconductor device using substrate having cubic structure and method of manufacturing the same
03/16/2004US6707144 Insulated high speed semiconductor switching device
03/16/2004US6707132 High performance Si-Ge device module with CMOS technology
03/16/2004US6707131 Semiconductor device and manufacturing method for the same
03/16/2004US6707130 Bipolar device with polycrystalline film contact and resistance
03/16/2004US6707128 Vertical MISFET transistor surrounded by a Schottky barrier diode with a common source and anode electrode