| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/12/2004 | US20040026728 Semiconductor device and combined IC using the same |
| 02/12/2004 | US20040026727 Semiconductor device and method of manufacturing the same |
| 02/12/2004 | US20040026725 Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric |
| 02/12/2004 | US20040026724 Active pixel having reduced dark current in a CMOS image sensor |
| 02/12/2004 | US20040026723 System and methods for driving an electro-optical device |
| 02/12/2004 | US20040026722 System and method to reduce noise in a substrate |
| 02/12/2004 | US20040026721 Light emitting diode light source |
| 02/12/2004 | US20040026718 Solid-state image pick-up device and method of manufacturing the same |
| 02/12/2004 | US20040026717 Semiconductor integrated circuit device |
| 02/12/2004 | US20040026713 Semiconductor device with high structural reliability and low parasitic capacitance |
| 02/12/2004 | US20040026711 Pulsed bistable bidirectional electronic switch |
| 02/12/2004 | US20040026701 Group 4 nitride; reducing electrical resistance |
| 02/12/2004 | US20040026696 Semiconductor element and semiconductor device using the same |
| 02/12/2004 | US20040026688 Schottky barrier tunnel transistor using thin silicon layer on insulator and method for fabricating the same |
| 02/12/2004 | US20040026687 Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
| 02/12/2004 | US20040026684 Nanowire heterostructures for encoding information |
| 02/12/2004 | US20040026358 Method for producing defined polycrystalline silicon areas in an amorphous silicon layer |
| 02/12/2004 | US20040025589 Micromechanical component |
| 02/12/2004 | DE19843959B4 Verfahren zum Herstellen eines Halbleiterbauelements mit einem sperrenden pn-Übergang A method of manufacturing a semiconductor device having a blocking pn junction |
| 02/12/2004 | DE19754784B4 Verfahren zur Herstellung einer Matrix aus Dünnschichttransistoren mit Speicherkapazitäten A process for producing a matrix of thin film transistors with storage |
| 02/12/2004 | DE19730864B4 Neuronen-MOS-Transistor und Verfahren zu seiner Ausbildung Neuron MOS transistor and method of training |
| 02/12/2004 | DE10335096A1 Maskenlose Mittellinien-Belag-Aufbringung Maskless Axis lining application |
| 02/12/2004 | DE10331826A1 Transflektives Flüssigkristalldisplay und Verfahren zur Herstellung desselben A transflective liquid crystal display and method of manufacturing the same |
| 02/12/2004 | DE10235074A1 Vertical field effect power transistor used as a trench gate DMOS transistor has source regions formed vertically to the surface of the silicon wafer by the polysilicon filling height of the trench |
| 02/12/2004 | DE10235000A1 Production of a channel zone in a transistor e.g. vertical depletion-MOSFET transistor cell, comprises structuring a polysilicon layer via the channel zone to be formed |
| 02/12/2004 | DE10234735A1 Structurization of process area inclined or perpendicular to substrate surface, used in trench in semiconductor, especially in capacitor production, involves depositing liner of uniform thickness from precursors only in upper part |
| 02/12/2004 | DE10234677A1 Field effect transistor used as a DMOS transistor comprises a source region, a channel region, a drain region, a drift path, and a protection unit for connecting to a unit for influencing the conductivity of the drift path |
| 02/12/2004 | DE10231966A1 Field effect transistor used as control transistor comprises a doped channel region, doped connecting regions, a control region, and an electrical insulating region arranged between the control region and the channel region |
| 02/12/2004 | DE10231965A1 Verfahren zur Herstellung einer T-Gate-Struktur sowie eines zugehörigen Feldeffekttransistors A method for preparing a T-gate structure as well as of an associated field effect transistor |
| 02/12/2004 | DE10231934A1 Multiple field effect transistor structure for high frequency power uses has shielded crossing between source and gate connections to prevent back capacitive effect |
| 02/12/2004 | DE10151700B4 Feldeffekt-Halbleiterbauelement und zugehöriges Herstellungsverfahren Field-effect semiconductor device and manufacturing method thereof |
| 02/12/2004 | CA2450611A1 Method of creating a high performance organic semiconductor device |
| 02/11/2004 | EP1388952A1 Transceiver having shadow memory facilitating on-transceiver collection and communication of local parameters |
| 02/11/2004 | EP1388931A2 NRD guide Gunn oscillator |
| 02/11/2004 | EP1388902A2 Fabricating method of Gunn diode |
| 02/11/2004 | EP1388901A2 Structure for assembly of a Gunn diode |
| 02/11/2004 | EP1388898A1 Semiconducting device for injecting a spin polarized current in a semiconductor |
| 02/11/2004 | EP1388897A1 Thin film transistor and active matrix type display unit production methods therefor |
| 02/11/2004 | EP1388896A1 Memory of silicon on insulator type |
| 02/11/2004 | EP1388895A2 System and method to reduce noise in a substrate |
| 02/11/2004 | EP1388892A2 A triple gate oxide process with high-gate dielectric |
| 02/11/2004 | EP1388889A2 Method to form a gate insulator layer comprised with multiple dielectric constants and multiple thicknesses |
| 02/11/2004 | EP1388521A1 Method for preparing a nanowire crossbar structure and use of a structure prepared by this method |
| 02/11/2004 | EP1388179A1 Switching element having memory effect |
| 02/11/2004 | EP1388178A2 A method of providing a layer including a metal or silicon or germanium and oxygen on a surface |
| 02/11/2004 | EP1388173A2 Non-volatile memory cells utilizing substrate trenches |
| 02/11/2004 | EP1388172A1 Eeprom cell with asymmetric thin window |
| 02/11/2004 | EP1388166A1 Production method for a semiconductor component |
| 02/11/2004 | EP1082764B1 Semiconductor current-switching device having operational enhancer and method therefor |
| 02/11/2004 | EP0910869B1 A METHOD FOR PRODUCING A CHANNEL REGION LAYER IN A SiC-LAYER FOR A VOLTAGE CONTROLLED SEMICONDUCTOR DEVICE |
| 02/11/2004 | EP0691034B1 Bipolar transistor structure using ballast resistor |
| 02/11/2004 | CN1475036A Solid embossing of polymer devices |
| 02/11/2004 | CN1475034A Semiconductor device with reduced line-to-line capacitance and cross talk noise |
| 02/11/2004 | CN1475033A Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure |
| 02/11/2004 | CN1475031A FET with notched gate and method of manufacturing same |
| 02/11/2004 | CN1475027A Semiconductor structure having high dielectric constant material |
| 02/11/2004 | CN1474485A 激光二极管 Laser diode |
| 02/11/2004 | CN1474460A Novel metal semiconductor field effect transistor (MESFET) device and its producing process |
| 02/11/2004 | CN1474459A Semiconductor device with high structure reliability and low parasitic capacitance |
| 02/11/2004 | CN1474457A Non-volatile semiconductor storage device |
| 02/11/2004 | CN1474445A Evaluating method for semiconductor crystal chip |
| 02/11/2004 | CN1474436A Semiconductor device with self-aligning section contact hole and its producing method |
| 02/11/2004 | CN1474435A Method and its structure for forming semiconductor device |
| 02/11/2004 | CN1474434A Method for producing silicon nano wire |
| 02/11/2004 | CN1474422A Electrolytic capacitor and its producing method |
| 02/11/2004 | CN1474219A Active matrix substrate, photoelectric device and electronic device |
| 02/11/2004 | CN1138307C Low power consumption semiconductor power switch device and making method thereof |
| 02/11/2004 | CN1138300C Nitrogen oxide grid medium and its making method |
| 02/11/2004 | CN1138176C Liquid crystal display device and TFT panel |
| 02/11/2004 | CN1138135C Semiconductor pressure sensor and its manufacturing method |
| 02/10/2004 | US6690602 Algorithm dynamic reference programming |
| 02/10/2004 | US6690601 Nonvolatile semiconductor memory cell with electron-trapping erase state and methods for operating the same |
| 02/10/2004 | US6690596 Pattern layout of transfer transistors employed in a row decoder |
| 02/10/2004 | US6690423 Solid-state image pickup apparatus |
| 02/10/2004 | US6690212 Inductive load driving circuit |
| 02/10/2004 | US6690110 Line structure in electroluminescence display device |
| 02/10/2004 | US6690085 High-voltage semiconductor device used as switching element or the like |
| 02/10/2004 | US6690082 High dopant concentration diffused resistor and method of manufacture therefor |
| 02/10/2004 | US6690075 Semiconductor device with channel having plural impurity regions |
| 02/10/2004 | US6690074 Radiation resistant semiconductor device structure |
| 02/10/2004 | US6690072 Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned COSI2 on raised source drain Si/SiGe device |
| 02/10/2004 | US6690070 Insulated gate semiconductor device and its manufacturing method |
| 02/10/2004 | US6690068 Thin film transistors and semiconductor device |
| 02/10/2004 | US6690064 Thin-film semiconductor device containing poly-crystalline Si-Ge alloy and method for producing thereof |
| 02/10/2004 | US6690063 Thin film semiconductor integrated circuit and method for forming the same |
| 02/10/2004 | US6690062 Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance |
| 02/10/2004 | US6690061 MOS Semiconductor device |
| 02/10/2004 | US6690060 Field effect transistor and method of fabricating the same by controlling distribution condition of impurity region with implantation of additional ion |
| 02/10/2004 | US6690059 Nanocrystal electron device |
| 02/10/2004 | US6690058 Self-aligned multi-bit flash memory cell and its contactless flash memory array |
| 02/10/2004 | US6690056 EEPROM cell on SOI |
| 02/10/2004 | US6690051 FLASH memory circuitry |
| 02/10/2004 | US6690048 Photogate for converting light into an electric charge integrated with a transistor for transferring the electric charge |
| 02/10/2004 | US6690047 MIS transistor having a large driving current and method for producing the same |
| 02/10/2004 | US6690046 Semiconductor assemblies, methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates |
| 02/10/2004 | US6690043 Semiconductor device and method of manufacturing the same |
| 02/10/2004 | US6690042 Metal oxide semiconductor heterostructure field effect transistor |
| 02/10/2004 | US6690040 Vertical replacement-gate junction field-effect transistor |
| 02/10/2004 | US6690039 Thyristor-based device that inhibits undesirable conductive channel formation |
| 02/10/2004 | US6690038 Thyristor-based device over substrate surface |