Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2004
02/25/2004CN1477641A Semiconductor storage
02/25/2004CN1139995C Electrostatic discharge protective circuit and single-chip machine system using the same
02/25/2004CN1139993C Method for mfg. semiconductor device
02/25/2004CN1139979C Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same
02/25/2004CN1139976C Semiconductor component and its making method
02/25/2004CN1139973C Method for making semiconductor device of which parasitic capacitance is decreased
02/25/2004CN1139837C Film transistor array substrate for liquid crystal and manufacture thereof
02/24/2004US6698000 Semiconductor process parameter determining method, semiconductor process parameter determining system, and semiconductor process parameter determining program
02/24/2004US6696743 Semiconductor transistor having gate electrode and/or gate wiring
02/24/2004US6696741 High breakdown voltage PN junction structure, and related manufacturing process
02/24/2004US6696737 Unipolar spin transistor and the applications of the same
02/24/2004US6696735 Semiconductor device and method for fabricating the same
02/24/2004US6696734 LDD high voltage MOS transistor
02/24/2004US6696732 Semiconductor device having S/D to S/D connection and isolation region between two semiconductor elements
02/24/2004US6696730 Electrostatic discharge protection device for semiconductor integrated circuit, method for producing the same, and electrostatic discharge protection circuit using the same
02/24/2004US6696729 Semiconductor device having diffusion regions with different junction depths
02/24/2004US6696728 Super-junction semiconductor device
02/24/2004US6696727 Field effect transistor having improved withstand voltage
02/24/2004US6696726 Vertical MOSFET with ultra-low resistance and low gate charge
02/24/2004US6696725 Dual-gate MOSFET with channel potential engineering
02/24/2004US6696724 Having nonvolatile memory cells more compact than planar ones
02/24/2004US6696719 Semiconductor device with improved peripheral resistance element and method for fabricating same
02/24/2004US6696711 Semiconductor device and power amplifier using the same
02/24/2004US6696710 Heterojunction bipolar transistor (HBT) having an improved emitter-base junction
02/24/2004US6696709 Low voltage protection module
02/24/2004US6696708 Electrostatic discharge protection apparatus
02/24/2004US6696706 Structure and method for a junction field effect transistor with reduced gate capacitance
02/24/2004US6696705 Power semiconductor component having a mesa edge termination
02/24/2004US6696702 Silicon carbide semiconductor switching device
02/24/2004US6696701 Electrostatic discharge protection for pixellated electronic device
02/24/2004US6696636 By-pass rectifier element and terminal housing for solar battery modules using a by-pass rectifier element
02/24/2004US6696372 Method of fabricating a semiconductor structure having quantum wires and a semiconductor device including such structure
02/24/2004US6696368 Titanium boronitride layer for high aspect ratio semiconductor devices
02/24/2004US6696346 Method of manufacturing semiconductor device
02/24/2004US6696345 Metal-gate electrode for CMOS transistor applications
02/24/2004US6696342 Small emitter and base-collector bi-polar transistor
02/24/2004US6696340 Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the same
02/24/2004US6696332 Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing
02/24/2004US6696331 Method of protecting a stacked gate structure during fabrication
02/24/2004US6696329 Method of manufacturing semiconductor device
02/24/2004US6696328 CMOS gate electrode using selective growth and a fabrication method thereof
02/24/2004US6696327 Method for making a semiconductor device having a high-k gate dielectric
02/24/2004US6696324 Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same
02/24/2004US6696323 Method of manufacturing semiconductor device having trench filled up with gate electrode
02/24/2004US6696313 Preparing substrate; growing a superlattice strained layer by alternately depositing two semiconductor materials having different lattice constant by a predetermined cycle; forming a quantum-dot active layer including quantum dots
02/24/2004US6696309 Methods for making electrooptical device and driving substrate therefor
02/24/2004US6696306 Methods of fabricating layered structure and semiconductor device
02/24/2004US6694814 Dynamic sensor having capacitance varying according to dynamic force applied thereto
02/24/2004CA2351721C Slotted quantum well sensor
02/24/2004CA2347429C Conductive isostructural compounds
02/19/2004WO2004015782A1 Insulated gate field effect transistor having passivated schottky barriers to the channel
02/19/2004WO2004015781A1 Method for manufacturing compound semiconductor wafer and compound semiconductor device
02/19/2004WO2004015780A1 Field effect transistor
02/19/2004WO2004015778A1 Nonvolatile memory device
02/19/2004WO2004015758A1 Semiconductor device and method for manufacturing the same
02/19/2004WO2004015755A1 Method for fabricating a self-aligned bipolar transistor and related structure
02/19/2004WO2004015749A1 Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures
02/19/2004WO2004015745A2 A dmos device with a programmable threshold voltage
02/19/2004WO2004015667A1 Electroluminescent display device having pixels with nmos transistors
02/19/2004WO2004014784A1 Micromachine and production method therefor
02/19/2004WO2003100865A3 Microwave field effect transistor structure
02/19/2004WO2003069658A3 Strained si based layer made by uhv-cvd, and devices therein
02/19/2004WO2003015173A3 Floating gate memory array and methods of forming
02/19/2004WO2002101767A3 High voltage, high temperature capacitor structures and methods of fabricating same
02/19/2004WO2002097820A3 Pair wise programming method for dual cell eeprom
02/19/2004WO2002080287A3 Semiconductor structures and devices for detecting far-infrared light
02/19/2004US20040033701 Lanthanide doped tiox dielectric films
02/19/2004US20040033694 Method of making a vertical gate semiconductor device
02/19/2004US20040033692 Fabrication method for semiconductor integrated circuit device
02/19/2004US20040033686 Semiconductor device having a metal-semiconductor junction with a reduced contact resistance
02/19/2004US20040033681 Lanthanide doped TiOx dielectric films by plasma oxidation
02/19/2004US20040033678 Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
02/19/2004US20040033677 Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
02/19/2004US20040033676 Electronic components and method of fabricating the same
02/19/2004US20040033671 Double polysilicon bipolar transistor and method of manufacture therefor
02/19/2004US20040033666 Isolated complementary MOS devices in epi-less substrate
02/19/2004US20040033665 Structure and method of controlling short-channel effect of very short channel MOSFET
02/19/2004US20040033664 Semiconductor device having electrically erasable programmable read-only memory (EEPROM) and Mask-ROM and method of fabricating the same
02/19/2004US20040033662 Integrated circuit capacitors having doped HSG electrodes
02/19/2004US20040033661 Semiconductor device and method for manufacturing the same
02/19/2004US20040033658 Method of fabricating MOS transistors
02/19/2004US20040033657 Method for fabricating memory unit with T-shaped gate
02/19/2004US20040033655 Floating gate and method of fabricating the same
02/19/2004US20040033648 Method of fabricating thin film transistor
02/19/2004US20040033641 Method of creating a hight performance organic semiconductor device
02/19/2004US20040032788 Nonvolatile semiconductor memory
02/19/2004US20040032773 Programmable memory address and decode circuits with vertical body transistors
02/19/2004US20040032762 DMOS device with a programmable threshold voltage
02/19/2004US20040032544 Liquid crystal display panel with static electricity prevention circuit
02/19/2004US20040032390 Electrophoretic display with dual-mode switching
02/19/2004US20040032279 Semiconductor device having bonding pads and probe pads
02/19/2004US20040032244 Time recording device and a time recording method employing a semiconductor element
02/19/2004US20040032007 Capacitor layout technique for reduction of fixed pattern noise in a CMOS sensor
02/19/2004US20040032006 For isolation of a semiconductor device; structures having different constructions in a cell region and a peripheral region of a substrate
02/19/2004US20040032005 Complementary analog bipolar transistors with trench-constrained isolation diffusion
02/19/2004US20040032004 High performance varactor diodes
02/19/2004US20040032003 Semiconductor device fabricated on surface of silicon having <110>direction of crystal plane and its production method
02/19/2004US20040031998 Electrostatic discharge protection device
02/19/2004US20040031997 Semiconductor device, method for evaluating the same, and method for fabricating the same
02/19/2004US20040031996 Semiconductor device and method for forming