Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2004
03/30/2004US6713325 Method of manufacturing a semiconductor integrated circuit and semiconductor integrated circuit
03/30/2004US6713324 Display device and a method for manufacturing the same
03/30/2004US6713323 Semiconductor device and method of manufacturing the same
03/30/2004US6713316 Method for removing foreign matter, method for forming film, semiconductor device and film forming apparatus
03/30/2004US6713199 Plurality of separate layers, each having a thickness of less than 500 angstrom , and based on hafnium dioxide (hfo2), zirconium dioxide (zro2) and alumina (al2o3). in practice, the hafnium dioxide, zirconium dioxide and alumina layers form
03/30/2004US6712288 Method and apparatus for separating sample
03/30/2004CA2257232C Silicon carbide metal-insulator semiconductor field effect transistor
03/25/2004WO2004026004A1 Organic electroluminescence display and its manufacturing method
03/25/2004WO2004025739A2 Method for producing an integrated pin diode and corresponding circuit
03/25/2004WO2004025735A1 Semiconductor device
03/25/2004WO2004025733A1 Non-planar nitride-based semiconductor structure and metehod for fabricating the same
03/25/2004WO2004025731A2 Method for the production of sonos memory cells, sonos memory cell, and memory cell field
03/25/2004WO2004025719A2 Nitrogen passivation of interface states in sio2/sic structures
03/25/2004WO2004025715A1 Method for production of a layered structure with nanocrystals in a dielectric layer
03/25/2004WO2004025712A2 Method for p-type doping wide band gap oxide semiconductors
03/25/2004WO2004025709A2 Method for fabricating an ohmic contact in a semiconductor device
03/25/2004WO2004025707A2 Active electronic devices based on gallium nitride and its alloys grown on silicon substrates with buffer layers of sicain
03/25/2004WO2004025696A2 Active matrix backplane for controlling controlled elements and method of manufacture thereof
03/25/2004WO2003107399A3 Method for improving nitrogen profile in plasma nitrided gate dielectric layers
03/25/2004WO2003100841A3 Method for the production of a memory cell, memory cell and memory cell arrangement
03/25/2004WO2003092077A3 Electronic displays
03/25/2004WO2003079410A3 Supporting control gate connection on a package using additional bumps
03/25/2004WO2003065050A3 Method of manufacturing an accelerometer
03/25/2004WO2003043086A3 Method for detecting currents in a semiconductor component with a multi-cell current sensor
03/25/2004WO2003034501A3 Mos devices and corresponding manufacturing methods and circuits
03/25/2004US20040059559 Circuit simulation apparatus incorporating diffusion length dependence of transistors and method for creating transistor model
03/25/2004US20040058558 Manufacturing method for a semiconductor device
03/25/2004US20040058537 Method and apparatus for separating sample
03/25/2004US20040058534 Manufacturing method of semiconductor device and semiconductor device
03/25/2004US20040058532 Controlling electromechanical behavior of structures within a microelectromechanical systems device
03/25/2004US20040058530 Method of manufacturing the semiconductor device
03/25/2004US20040058506 Semiconductor device and method of manufacturing a semiconductor device
03/25/2004US20040058499 Semiconductor device and manufacturing method of the same
03/25/2004US20040058498 Gate with dual gate dielectric layer and method of fabricating the same
03/25/2004US20040058497 Methods for improving within-wafer uniformity of gate oxide
03/25/2004US20040058496 Method for fabricating semiconductor device
03/25/2004US20040058495 Method of fabricating FLASH memory devices
03/25/2004US20040058494 Split-gate flash memory cell and manufacturing method thereof
03/25/2004US20040058489 Method of manufacturing semiconductor device including process for implanting impurities into substrate via MOS transistor gate electrode and gate insulation film
03/25/2004US20040058486 Semiconductor device and fabricating method thereof
03/25/2004US20040058485 Semiconductor device with mushroom gate
03/25/2004US20040058484 Crystallization apparatus, crystallization method, and phase shifter
03/25/2004US20040058483 Semiconductor device and method of manufacturing thereof
03/25/2004US20040058482 Method for improving a semiconductor substrate having SiGe film and semiconductor device manufactured by using this method
03/25/2004US20040058481 Method of forming self aligned contacts for a power mosfet
03/25/2004US20040057328 Split gate flash memory cell
03/25/2004US20040057319 Ferroelectric transistor for storing two data bits
03/25/2004US20040057303 Method and article for concentrating fields at sense
03/25/2004US20040057295 Magnetic storage element, production method and driving method therefor, and memory array
03/25/2004US20040057288 Control method of non-volatile semiconductor memory cell and non-volatile semiconductor memory device
03/25/2004US20040057274 Ferroelectric transistor for storing two data bits
03/25/2004US20040057266 Semiconductor memory device, electronic card and electronic device
03/25/2004US20040057264 Multibit non-volatile memory and method
03/25/2004US20040057005 Liquid crystal display device
03/25/2004US20040056855 Display device and manufacturing method thereof
03/25/2004US20040056705 Enhanced conductivity body biased PMOS driver
03/25/2004US20040056702 Semiconductor circuit, method of driving the same and semiconductor device
03/25/2004US20040056604 Pixel structure for an active matrix OLED
03/25/2004US20040056588 Electro-optical device, method of manufacturing the same, and electronic apparatus
03/25/2004US20040056365 Flip-chip image sensor packages and methods of fabrication
03/25/2004US20040056344 Multi-chip circuit module and method for producing the same
03/25/2004US20040056328 Variable capacitance
03/25/2004US20040056327 Discontinuous dielectric interface for bipolar transistors
03/25/2004US20040056316 Method and apparatus for a flash memory device comprising a source local interconnect
03/25/2004US20040056315 Semiconductor device and manufacturing method thereof
03/25/2004US20040056314 Improve performance of high-frequency circuit, increase the electrical resistance of substrate, by control the concentration of dissolved oxygen at not more than 8 x 1017 atoms/cm3
03/25/2004US20040056312 Semiconductor device and method for fabricating the same
03/25/2004US20040056311 Power factor correction circuit with high-voltage semiconductor component
03/25/2004US20040056310 Termination structure incorporating insulator in a trench
03/25/2004US20040056309 SOI structure and method of producing same
03/25/2004US20040056308 Semiconductor device and manufacturing method therefor
03/25/2004US20040056307 Ultra small-sized soi mosfet and method of fabricating the same
03/25/2004US20040056306 Power semiconductor device
03/25/2004US20040056305 Double gate transistor for low power circuits
03/25/2004US20040056304 Method of forming transistor having insulating spacers on gate sidewalls
03/25/2004US20040056302 Buried gate-field termination structure
03/25/2004US20040056301 Transistor having insulating spacers on gate sidewalls to reduce overlap between the gate and doped extension regions of the source and drain
03/25/2004US20040056300 Flash memory device and fabricating method therefor
03/25/2004US20040056299 Nonvolatile memory cell with a floating gate at least partially located in a trench in a semiconductor substrate
03/25/2004US20040056297 Substrate device, method of manufacturing the same, electro-optical device, and electronic apparatus
03/25/2004US20040056295 Structurally-stabilized capacitors and method of making of same
03/25/2004US20040056293 Semiconductor device and method of fabricating the same
03/25/2004US20040056285 Metal spacer gate for CMOS FET
03/25/2004US20040056284 MIS semiconductor device and the manufacturing method thereof
03/25/2004US20040056283 Semiconductor device and manufacturing method of the same
03/25/2004US20040056282 Semiconductor device
03/25/2004US20040056281 Method for forming a self-aligned contact of a semiconductor device and method for manufacturing a semiconductor device using the same
03/25/2004US20040056276 Method and device using titanium doped aluminum oxide for passivation of ferroelectric materials
03/25/2004US20040056274 Semiconductor device and method for manufacturing the same
03/25/2004US20040056273 High-electron mobility transistor with zinc oxide
03/25/2004US20040056270 Memory system capable of operating at high temperatures and method for fabricating the same
03/25/2004US20040056257 Light-emitting device, method for driving light-emitting device and element board
03/25/2004US20040056253 Semiconductor device
03/25/2004US20040056252 System and method of driving electro-optical device
03/25/2004US20040056251 Thin film transistor array panel and manufacturing method thereof
03/25/2004US20040056250 Semiconductor light-receiving device
03/25/2004US20040056247 Bitline of semiconductor device having stud type capping layer and method for fabricating the same
03/25/2004US20040056246 Organic thin film transistor (OTFT) and manufacturing process thereof
03/25/2004US20040055999 Method for planarizing polysilicon
03/25/2004US20040055997 Etchant for wires, a method for manufacturing the wires using the etchant, a thin film transistor array substrate and a method for manufacturing the same including the method