Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
---|
04/08/2004 | US20040065942 Reduce 1/f noise in NPN transistors without degrading the properties of PNP transistors in integrated circuit technologies |
04/08/2004 | US20040065939 Integrated, tunable capacitance device |
04/08/2004 | US20040065937 Floating gate memory structures and fabrication methods |
04/08/2004 | US20040065936 Transistor structures including separate anti-punchthrough layers and methods of forming same |
04/08/2004 | US20040065935 Power devices and methods for manufacturing the same |
04/08/2004 | US20040065934 Bidirectional shallow trench superjunction device with resurf region |
04/08/2004 | US20040065931 Method for producing a semiconductor component having a movable mass in particular, and semiconductor component produced according to this method |
04/08/2004 | US20040065929 Organic gate insulating film and organic thin film transistor using the same |
04/08/2004 | US20040065928 UV-programmed P-type mask ROM and fabrication thereof |
04/08/2004 | US20040065927 TFT-based common gate CMOS inverters, and computer systems utilizing novel CMOS inverters |
04/08/2004 | US20040065926 Semiconductor device, manufacturing method thereof, and CMOS integrated circuit device |
04/08/2004 | US20040065925 Semiconductor constructions comprising three-dimensional thin film transistor devices and resistors; and processes of forming stacked resistor constructions |
04/08/2004 | US20040065924 Ldd structure of thin film transistor and process for producing same |
04/08/2004 | US20040065923 Bi-directional silicon controlled rectifier for electrostatic discharge protection |
04/08/2004 | US20040065921 Semiconductor device |
04/08/2004 | US20040065920 Short channel trench mosfet with reduced gate charge |
04/08/2004 | US20040065919 Trench gate laterally diffused MOSFET devices and methods for making such devices |
04/08/2004 | US20040065918 Nonvolatile memory device |
04/08/2004 | US20040065917 Flash memory cells with separated self-aligned select and erase gates, and process of fabrication |
04/08/2004 | US20040065916 Non-volatile semiconductor memory devices and methods for manufacturing the same |
04/08/2004 | US20040065914 Semiconductor device and method of fabricating the same |
04/08/2004 | US20040065909 Polycrystallline silicon; patterned masking structure; doping channel zones |
04/08/2004 | US20040065907 Narrow wire; reducing contactor defects ; using automatic layout tools |
04/08/2004 | US20040065902 Electro-optical device and electronic device |
04/08/2004 | US20040065900 Semiconductor device and manufacturing the same |
04/08/2004 | US20040065898 Heterojunction bipolar transistor having wide bandgap material in collector |
04/08/2004 | US20040065897 Heterojunction bipolar transistor having non-uniformly doped collector for improved safe-operating area |
04/08/2004 | US20040065896 Junction field-effect transistor |
04/08/2004 | US20040065895 Silicon controlled rectifier structure with guard ring controlled circuit |
04/08/2004 | US20040065892 Methods and devices related to electrode pads for p-type group III nitride compound semiconductors |
04/08/2004 | US20040065889 Semiconductor wafer, semiconductor device, and methods for fabricating the same |
04/08/2004 | US20040065885 Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method |
04/08/2004 | US20040065884 High performance three-dimensional TFT-based CMOS inverters, and computer systems utilizing such novel CMOS inverters |
04/08/2004 | US20040065883 Semiconductor device and manufacturing method thereof |
04/08/2004 | US20040065882 Semiconductor device and process for production thereof |
04/08/2004 | US20040065878 Semiconductor device |
04/08/2004 | US20040065875 Semiconductor device |
04/08/2004 | DE19839063B4 Flüssigkristallanzeigevorrichtung und Herstellungsverfahren dafür A liquid crystal display device and production method thereof |
04/08/2004 | DE19623069B4 Flüssigkristallanzeigevorrichtung und Verfahren zum Herstellen derselben A liquid crystal display device and method of manufacturing the same |
04/08/2004 | DE10338021A1 Vertikaler NROM und Verfahren zu dessen Herstellung Vertical NROM and process for its preparation |
04/08/2004 | DE10334415A1 Diode used as a pn-barrier layer diode comprises a semiconductor substrate, strip diffusion regions, first electrodes connected to the diffusion regions, and a second electrode |
04/08/2004 | DE10245091A1 Production of a semiconductor component structure used as a diode or MOSFET comprises preparing a semiconductor body, forming a doped trenched semiconductor zone in the semiconductor body, and removing the semiconductor body |
04/08/2004 | DE10245090A1 Production of a semiconductor component used as a MOSFET comprises preparing a channel zone layer, forming a recess in the first channel zone layer, filling the recess with a recombination zone, and applying a further channel zone layer |
04/08/2004 | DE10245089A1 Doping process used in the production of a transistor, IGBT, thyristor or diode comprises preparing a semiconductor body, producing crystal defects in the body, introducing hydrogen ions into the body, and heat treating |
04/08/2004 | DE10245050A1 Insulated gate bipolar transistor to be controlled as a semiconductor component by field effect has an integrated recovery element and a recovery diode function |
04/08/2004 | DE10245049A1 Semiconductor component to be controlled by field effect subject to charged particle compensation fits in a semiconductor body |
04/07/2004 | EP1406310A2 Semiconductor device with field-shaping regions |
04/07/2004 | EP1406309A1 Semiconductor device |
04/07/2004 | EP1406308A2 SiGeC heterojunction bipolar transistor |
04/07/2004 | EP1406307A1 Integrated circuit with a highly conductive buried layer |
04/07/2004 | EP1406306A2 Semiconductor device including bipolar junction transistor, and production method therefor |
04/07/2004 | EP1406305A2 Charge-coupled device (CCD) and method of operating the same |
04/07/2004 | EP1406295A2 A method of forming a CMOS device |
04/07/2004 | EP1406284A2 Tunneling emitter with nanohole openings |
04/07/2004 | EP1405932A1 Hafnium silicide target for gate oxide film formation and its production method |
04/07/2004 | EP1405356A2 Solution influenced alignment |
04/07/2004 | EP1405355A1 Progressive aligned deposition |
04/07/2004 | EP1405350A1 Silicon carbide schottky barrier diode and method of making |
04/07/2004 | EP1405349A2 Algan/gan hemts having a gate contact on a gan based cap segment and methods of fabricating the same |
04/07/2004 | EP1405348A2 Hv-soi ldmos device with integrated diode to improve reliability and avalanche ruggedness |
04/07/2004 | EP1405347A2 Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same |
04/07/2004 | EP1405341A2 Bipolar transistor with raised extrinsic base fabricated in an integrated bicmos circuit |
04/07/2004 | EP1405340A2 Non-volatile memory |
04/07/2004 | CN2610496Y High frequency channel microwave diode |
04/07/2004 | CN1488176A Magnetic storage element, production method and driving method therefor, and memory array |
04/07/2004 | CN1488175A Spin switch and magnetic storage element using it |
04/07/2004 | CN1488173A Trench gate fermi-threshold field effect transistors and methods of fabricating the same |
04/07/2004 | CN1488172A 半导体装置 Semiconductor device |
04/07/2004 | CN1488083A Thin film transistor array substrate of liquid crystal display device and producing method thereof |
04/07/2004 | CN1488066A Micromachined silicon gyro using tuned accelerometer |
04/07/2004 | CN1487655A Electric charge pump apparatus |
04/07/2004 | CN1487600A Semiconductor device and producing method thereof |
04/07/2004 | CN1487599A Field effect transistor with multi-superposed channels |
04/07/2004 | CN1487598A Semiconductor device with elevated source/drain structure and producing method thereof |
04/07/2004 | CN1487597A Polysilicon back gate SOI MOSFET for dynamic threshold voltage control |
04/07/2004 | CN1487596A Semiconductor device and producing method thereof |
04/07/2004 | CN1487595A High-voltage N-type transversely double-diffusion metal oxide semiconductor transistor |
04/07/2004 | CN1487594A High-voltage P-type metal oxide semiconductor transistor |
04/07/2004 | CN1487593A Single-electron transistor with stable switching characteristics |
04/07/2004 | CN1487592A Semiconductor device and producing method thereof |
04/07/2004 | CN1487587A Electric current mirror image circuit and light signal circuit utilizing the same |
04/07/2004 | CN1487581A 半导体器件 Semiconductor devices |
04/07/2004 | CN1487569A Method for producing thin film transistor |
04/07/2004 | CN1487568A Producing method of semiconductor device and producing system of semiconductor device |
04/07/2004 | CN1487565A Production method for semiconductor substrate, semiconductor substrate and semiconductor device |
04/07/2004 | CN1487563A 电子器件基片结构和电子器件 Electronic devices on the substrate structure and electronic devices |
04/07/2004 | CN1487348A Semiconductor device and producing method thereof, electrooptical device and electronic equipment |
04/07/2004 | CN1487344A Liquid crystal display manufacturing process and polysilicon layer forming process |
04/07/2004 | CN1145219C Pressure converter and its mfg. method |
04/07/2004 | CN1145218C Use of organic and inorganic hybridized material to make thin film transistor of semiconductor channel |
04/07/2004 | CN1145217C Field effect transistor and power amplifier including the same |
04/07/2004 | CN1145216C High density electric connector |
04/07/2004 | CN1145215C Transferring method of thin film device and and application thereof |
04/07/2004 | CN1145214C Channel capacitor with epitaxial cover layer |
04/07/2004 | CN1145210C 对准结构 Alignment structure |
04/07/2004 | CN1145208C Method for producing semiconductor device and semiconductor device |
04/07/2004 | CN1145195C Semiconductor structure having crystalline alkaline earth metal oxide interface with silicon |
04/06/2004 | US6718528 Latch-up verifying method and latch-up verifying apparatus capable of varying over-sized region |
04/06/2004 | US6717881 Semiconductor memory device having potential control circuit |
04/06/2004 | US6717860 Method of erasing non-volatile semiconductor memory device and such non-volatile semiconductor memory device |