Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2004
02/17/2004US6693006 Method for increasing area of a trench capacitor
02/17/2004US6693005 Trench capacitor with expanded area and method of making the same
02/17/2004US6693004 Interfacial barrier layer in semiconductor devices with high-K gate dielectric material
02/17/2004US6693001 Process for producing semiconductor integrated circuit device
02/17/2004US6693000 Semiconductor device and a method for forming patterns
02/17/2004US6692999 Polysilicon film forming method
02/17/2004US6692998 Integrated high quality diode
02/17/2004US6692997 Thin film transistors with dual layered source/drain electrodes and manufacturing method thereof, and active matrix display device and manufacturing method thereof
02/17/2004US6692996 Active layer of a thin film transistor can be crystallized into single crystalline silicon by filtering a crystal component having a uniform crystal orientation from a poly-crystal region
02/17/2004US6692987 BOC BGA package for die with I-shaped bond pad layout
02/17/2004US6692984 Method of manufacturing a semiconductor device
02/17/2004US6692982 Optical semiconductor integrated circuit device and manufacturing method for the same
02/17/2004US6691696 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions
02/12/2004WO2004015779A1 Method of creating a high performance organic semiconductor device
02/12/2004WO2004013922A2 Organic electronic devices
02/12/2004WO2004013913A1 Thin film transistor array panel
02/12/2004WO2004013912A1 Iii group nitride semiconductor substrate and method for preparation thereof, and iii group nitride semiconductor element and method for preparation thereof
02/12/2004WO2004013080A1 Spirobifluorene derivatives, their preparation and uses thereof
02/12/2004WO2004013038A2 Etch stop control for mems device formation
02/12/2004WO2004012932A1 Method for synthesizing nanoscale structures in defined locations
02/12/2004WO2003103041A3 Semiconductor device and method of manufacturing same
02/12/2004WO2003088312A3 Superjunction device with improved avalanche capability and breakdown voltage
02/12/2004WO2003088310A3 Substrate and method for producing a substrate
02/12/2004WO2003075319A3 Self-aligned transistor and diode topologies
02/12/2004WO2003049187A3 Overvoltage protection device
02/12/2004WO2003030220A3 Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
02/12/2004WO2003021692A3 Mutliple layer phase-change memory
02/12/2004WO2003003582A3 Low power operation mechanism and method
02/12/2004WO2003003470A3 Field effect transistor and method for the production thereof
02/12/2004US20040031004 Semiconductor integrated circuit device and fabrication method thereof
02/12/2004US20040029483 Electroluminescent display device manufacturing method
02/12/2004US20040029401 Organic insulating film forming method, semiconductor device manufacture method, and TFT substrate manufacture method
02/12/2004US20040029391 Method for improving a physical property defect value of a gate dielectric
02/12/2004US20040029390 Method for evaluating a crystalline semiconductor substrate
02/12/2004US20040029382 Pattering method
02/12/2004US20040029373 Method of manufacturing semiconductor device
02/12/2004US20040029370 Memory transistor and methods
02/12/2004US20040029368 Hypercontacting
02/12/2004US20040029364 Method of manufacturing device, device, and electronic apparatus
02/12/2004US20040029355 Semiconductor device and method for fabricating the same
02/12/2004US20040029354 Methods for manufacturing stacked gates including oxide/nitride/oxide (ono) interlayer dielectrics using pre-annealing and/or post-annealing in nitrogen
02/12/2004US20040029349 Methods of fabricating a MOSFET
02/12/2004US20040029345 Damascene architecture electronics storage and method for making same
02/12/2004US20040029342 Self-aligned trench-type dram strucutre and its manufacturing methods
02/12/2004US20040029341 Gap diode device
02/12/2004US20040029338 Semiconductor device and method of fabricating the same
02/12/2004US20040029332 Semiconductor device and method of manufacturing the same
02/12/2004US20040029331 Conductive structure for microelectronic devices and methods of fabricating such structures
02/12/2004US20040029330 Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
02/12/2004US20040029327 Semiconductor device with an improved gate electrode pattern and a method of manufacturing the same
02/12/2004US20040029326 Thin-film transistors formed on a flexible substrate
02/12/2004US20040029322 Method of forming a memory transistor comprising a Schottky contact
02/12/2004US20040029321 Method for forming gate insulating layer having multiple dielectric constants and multiple equivalent oxide thicknesses
02/12/2004US20040029320 Method to fabricate elevated source/drain structures in mos transistors
02/12/2004US20040029317 Semiconductor device production method and semiconductor device
02/12/2004US20040029314 Semiconductor device and manufacturing method thereof
02/12/2004US20040029311 Methods of and device for encapsulation and termination of electronic devices
02/12/2004US20040029310 Organic field-effect transistor (ofet), a production method therefor, an integrated circut constructed from the same and their uses
02/12/2004US20040029308 Method for manufacturing contact structures of wirings
02/12/2004US20040029297 Directed assembly of nanometer-scale molecular devices
02/12/2004US20040029296 Magnetoresistive memory and method of manufacturing the same
02/12/2004US20040029050 Computer control; coating semiconductor substrate with photoresist; circuit pattern; doping with phosphorus
02/12/2004US20040028952 Hafnium oxide mixture; crystal structure
02/12/2004US20040028812 Vapor deposition; applying alternating electric current
02/12/2004US20040028811 Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film
02/12/2004US20040027878 Row decoder in flash memory and erase method of flash memory cell using the same
02/12/2004US20040027877 Method for setting the threshold voltage of a field-effect transistor, field-effect transistor and integrated circuit
02/12/2004US20040027860 Semiconductor device
02/12/2004US20040027859 Non-volatile semiconductor memory device
02/12/2004US20040027858 Nonvolatile memory having a trap layer
02/12/2004US20040027756 Power switching device
02/12/2004US20040027743 Electrostatic discharge protection element
02/12/2004US20040027507 Active matrix type liquid crystal display and liquid crystal material
02/12/2004US20040027506 Liquid crystal display and fabricating method thereof
02/12/2004US20040027504 Liquid crystal display device and method of manufacturing the same
02/12/2004US20040027503 Display and its manufacturing method
02/12/2004US20040027343 Display device
02/12/2004US20040027154 Nanoelectronic devices
02/12/2004US20040027056 Electro-optical device and electronic apparatus
02/12/2004US20040026799 Manufacturing method of semiconductor device and semiconductor chip using SOI substrate
02/12/2004US20040026793 Transceiver having shadow memory facilitating on-transceiver collection and communication of local parameters
02/12/2004US20040026787 Semiconductor device and method for fabricating the same
02/12/2004US20040026768 Semiconductor dice with edge cavities
02/12/2004US20040026765 Semiconductor devices having strained dual channel layers
02/12/2004US20040026764 Low-loss bipolar transistor and method of manufacturing the same
02/12/2004US20040026763 Wordline gate contact for an mbit transistor array layout
02/12/2004US20040026753 Semiconductor device
02/12/2004US20040026752 High-performance MOS transistor of LDD structure having a gate insulating film with a nitride central portion and oxide end portions
02/12/2004US20040026751 Semiconductor integrated circuit device
02/12/2004US20040026749 Semiconductor memory device
02/12/2004US20040026748 Semiconductor device with source line and fabrication method thereof
02/12/2004US20040026747 Semiconductor device having an MIS transistor
02/12/2004US20040026745 Semiconductor device
02/12/2004US20040026744 Semiconductor module
02/12/2004US20040026740 Semiconductor device and a method of manufacturing the same
02/12/2004US20040026738 Semiconductor device and method therefore
02/12/2004US20040026737 MOS transistor device
02/12/2004US20040026736 Insulated gate field effect transistor having passivated schottky barriers to the channel
02/12/2004US20040026735 Semiconductor device having a vertical type semiconductor element
02/12/2004US20040026733 Multilayer, electroconductive stacks; high speed erasing