Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2004
04/01/2004WO2003088322A3 Semiconductor device
04/01/2004WO2003069015A3 Aperture masks for circuit fabrication
04/01/2004WO2002061836A9 High voltage semiconductor device
04/01/2004US20040063374 Method of manufacturing flat panel display device
04/01/2004US20040063337 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
04/01/2004US20040063311 Structure of thin film transistor and manufacturing method thereof
04/01/2004US20040063309 Selectively-etched nanochannel electrophoretic and electrochemical devices
04/01/2004US20040063303 Method for producing a semiconductor component comprising a t-shaped contact electrode
04/01/2004US20040063302 Semiconductor substrate with defects reduced or removed and method of manufacturing the same, and semiconductor device capable of bidirectionally retaining breakdown voltage and method of manufacturing the same
04/01/2004US20040063299 Semiconductor device and method for fabricating the same
04/01/2004US20040063297 Self-aligned selective hemispherical grain deposition process and structure for enhanced capacitance trench capacitor
04/01/2004US20040063293 Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics
04/01/2004US20040063292 Method for manufacturing semiconductor device
04/01/2004US20040063291 Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology
04/01/2004US20040063289 Reduction in source-drain resistance of semiconductor device
04/01/2004US20040063288 System and method for reducing soft error rate utilizing customized epitaxial layers
04/01/2004US20040063286 Field effect transistors having multiple stacked channels
04/01/2004US20040063285 Method for forming a semiconductor device structure a semiconductor layer
04/01/2004US20040063284 Scalable dielectric
04/01/2004US20040063283 Eeprom with split gate source side injection
04/01/2004US20040063282 Nanometer-scale semiconductor devices and method of making
04/01/2004US20040063281 Method of forming an isolation film in a semiconductor device
04/01/2004US20040063276 Process for producing semiconductor integated circuit device
04/01/2004US20040063273 Sti pull-down to control SiGe facet growth
04/01/2004US20040063270 Semiconductor device and manufacturing method thereof
04/01/2004US20040063269 Method for forming a semiconductor structure with improved smaller forward voltage loss and higher blocking capability
04/01/2004US20040063267 Organic field-effect transistor, method for structuring and ofet and integrated circuit
04/01/2004US20040063266 Semiconductor device and method of manufacturing the same
04/01/2004US20040063264 Method of forming a high performance and low cost CMOS device
04/01/2004US20040063263 Manufacturing method of semiconductor devices
04/01/2004US20040063262 Semiconductor device having improved halo structures and a method of forming the halo structures of a semiconductor device
04/01/2004US20040063261 Etching method, gate etching method, and method of manufacturing semiconductor devices
04/01/2004US20040063260 Sidewall processes using alkylsilane precursors for MOS transistor fabrication
04/01/2004US20040063259 Method for manufacturing semiconductor device
04/01/2004US20040063257 CMOS-type semiconductor device and method of fabricating the same
04/01/2004US20040063256 Manufacturing method of semiconductor device
04/01/2004US20040063255 Thin film transistor structure and method of manufacturing the same
04/01/2004US20040063253 Thin-film semiconductor device and liquid crystal display
04/01/2004US20040063238 Apparatus for detecting an amount of strain and method for manufacturing same
04/01/2004US20040062131 Semiconductor integrated circuit device having ROM decoder for converting digital signal to analog signal
04/01/2004US20040062108 Non-volatile programable and electrically erasable memory with a single layer of gate material
04/01/2004US20040062075 Memory array employing single three-terminal non-volatile storage elements
04/01/2004US20040062072 Nonvolatile semiconductor memory capable of generating read-mode reference current and verify-mode reference current from the same reference cell
04/01/2004US20040061980 Magneto-resistance effect element
04/01/2004US20040061671 Display apparatus driven by DC current
04/01/2004US20040061224 Spherical semiconductor device and method for fabricating the same
04/01/2004US20040061219 Semiconductor device
04/01/2004US20040061200 Semiconductor wafer and manufacturing method thereof
04/01/2004US20040061195 Semiconductor device and manufacturing method thereof
04/01/2004US20040061194 Gallium nitride compound semiconductor device having schottky contact
04/01/2004US20040061191 Mosfets incorporating nickel germanosilicided gate and methods for their formation
04/01/2004US20040061189 Semiconductor device and method of forming the same
04/01/2004US20040061188 Semiconductor device structures which utilize metal sulfides
04/01/2004US20040061187 Indium-boron dual halo MOSFET
04/01/2004US20040061185 MOS devices with reduced fringing capacitance
04/01/2004US20040061184 Nickel silicide - silicon nitride adhesion through surface passivation
04/01/2004US20040061182 High power mosfet semiconductor device
04/01/2004US20040061181 Semiconductor device and mehtod of manufacturing the same
04/01/2004US20040061179 Suppresses boron diffusion in doped semiconductors; dielectric stacks prevent shorting
04/01/2004US20040061178 Finfet having improved carrier mobility and method of its formation
04/01/2004US20040061176 Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device
04/01/2004US20040061175 Full depletion SOI-MOS transistor
04/01/2004US20040061174 Structure of thin film transistor
04/01/2004US20040061173 Single-electron transistor and fabrication method thereof
04/01/2004US20040061172 Damascene gate multi-mesa MOSFET
04/01/2004US20040061171 Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and Miller charge
04/01/2004US20040061170 Doping; high voltate semicondutors, integrated circuits, thyristors, switches
04/01/2004US20040061169 Non-volatile memory device and method of manufacturing the same
04/01/2004US20040061168 Electrically erasable and programmable non-volatile memory cell
04/01/2004US20040061167 Method of improving erase efficiency and a non-volatile memory cell made thereby
04/01/2004US20040061166 Magnetoresistive memory device and method for fabricating the same
04/01/2004US20040061165 Floating gate memory fabrication methods comprising a field dielectric etch with a horizontal etch component
04/01/2004US20040061164 Integrated DRAM process/structure using contact pillars
04/01/2004US20040061163 Semiconductor equipment
04/01/2004US20040061161 Memory cell with vertical transistor and trench capacitor with reduced burried strap
04/01/2004US20040061160 Semiconductor device including storage capacitor
04/01/2004US20040061159 Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method
04/01/2004US20040061157 Semiconductor device
04/01/2004US20040061156 Magnetic random access memory having transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cell
04/01/2004US20040061153 Non-volatile memory using ferroelectric gate field-effect transistors
04/01/2004US20040061151 Nanometer-scale semiconductor devices and method of making
04/01/2004US20040061150 CMOS of semiconductor device and method for manufacturing the same
04/01/2004US20040061149 Semiconductor device, annealing method, annealing apparatus and display apparatus
04/01/2004US20040061148 One-transistor floating-body DRAM cell in bulk CMOS process with electrically isolated charge storage region
04/01/2004US20040061146 Multi-chip semiconductor package and fabrication method thereof
04/01/2004US20040061141 Semiconductor device, EL display device, liquid crystal display device, and calculating device
04/01/2004US20040061134 Semiconductor substrate with defects reduced or removed and method of manufacturing the same, and semiconductor device capable of bidirectionally retaining breakdown voltage and method of manufacturing the same
04/01/2004US20040061133 Semiconductor device including bipolar junction transistor, and production method therefor
04/01/2004US20040061132 Microcircuits having metal oxide semiconductor (MOS) transistor; bismuth doped
04/01/2004US20040061131 Compact non-linear HBT array
04/01/2004US20040061130 High electron mobility transistor and method of manufacturing the same
04/01/2004US20040061129 Forming nitride-based semiconductor cap layer on channel layer; mask corresponds to recesses for contactors
04/01/2004US20040061128 Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating
04/01/2004US20040061113 CMOS image sensor
04/01/2004US20040061109 Oxide semiconductor electrode and process for producing the same
04/01/2004US20040061103 Quantum ridges and tips
04/01/2004US20040061060 Apparatus and method for detecting alpha particles
04/01/2004US20040060515 Semiconductor manufacturing apparatus and manufacturing method of thin film semiconductor device
04/01/2004US20040060504 Semiconductor thin film and process for production thereof
04/01/2004US20040060360 Pressure sensor and method of making the same