| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/11/2004 | US20040048452 Method of producing electronic device material |
| 03/11/2004 | US20040048450 Method for amorphization re-crystallization of si1-xgex films on silicon substrates |
| 03/11/2004 | US20040048440 Manufacturing method of semiconductor device |
| 03/11/2004 | US20040048439 Method for fabricating a bipolar transistor base |
| 03/11/2004 | US20040048433 Method of manufacturing a memory integrated circuit device |
| 03/11/2004 | US20040048432 Non-volatile memory device and fabrication method |
| 03/11/2004 | US20040048430 Semiconductor component and method |
| 03/11/2004 | US20040048428 Semiconductor device and method of manufacturing the same |
| 03/11/2004 | US20040048424 Method of forming an N channel and P channel FINFET device on the same semiconductor substrate |
| 03/11/2004 | US20040048423 Electronic devices comprising thin film transistors |
| 03/11/2004 | US20040048422 Thin film transistor device and method of manufacturing the same, thin film transistor substrate and display having the same |
| 03/11/2004 | US20040048408 Semiconductor device and manufacturing method thereof |
| 03/11/2004 | US20040048405 Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device |
| 03/11/2004 | US20040047540 Optical module |
| 03/11/2004 | US20040047217 Non-volatile semiconductor memory device and method of manufacturing the same |
| 03/11/2004 | US20040047202 Nonvolatile semiconductor memory |
| 03/11/2004 | US20040047195 Novel multi-state memory |
| 03/11/2004 | US20040047187 Non-volatile semiconductor memory device suppressing write-back fault |
| 03/11/2004 | US20040047183 Nonvolatile semiconductor memory adapted to store a multi-valued data in a single memory cell |
| 03/11/2004 | US20040046917 Liquid crystal display device |
| 03/11/2004 | US20040046912 Substrate for liquid-crystal display device and fabrication method thereof |
| 03/11/2004 | US20040046904 Liquid crystal display device and method of making same |
| 03/11/2004 | US20040046903 Active matrix liquid crystal display having a thin film transistor over which alignment of liquid crystal molecules does not change |
| 03/11/2004 | US20040046900 Light sensitive display |
| 03/11/2004 | US20040046600 Equivalent circuit of voltage-controlled variable capacitive element |
| 03/11/2004 | US20040046574 Capacitive micro pressure sensing member and fingerprint sensor using the same |
| 03/11/2004 | US20040046251 Semiconductor contact structure and method of forming the same |
| 03/11/2004 | US20040046233 Carbide emitter mask etch stop |
| 03/11/2004 | US20040046231 Semiconductor device having a fuse |
| 03/11/2004 | US20040046228 Apparatus and method for fabricating a high reverse voltage semiconductor device |
| 03/11/2004 | US20040046227 Semiconductor device |
| 03/11/2004 | US20040046226 Semiconductor device and method for manufacturing the same |
| 03/11/2004 | US20040046225 Semiconductor power component |
| 03/11/2004 | US20040046224 Schottky-diode semiconductor device |
| 03/11/2004 | US20040046221 Wafer-level test structure for edge-emitting semiconductor lasers |
| 03/11/2004 | US20040046220 Method Of Forming A Semiconductor Device Having T-Shaped Gate Structure |
| 03/11/2004 | US20040046219 Smile oxide film, serving as a gate oxide film, is formed under a three-layer poly-metal gate consisting of a doped polysilicon layer, a tungsten layer, and a SiON layer. The smile oxide film has a first region located beneath an edge of |
| 03/11/2004 | US20040046218 Ono interpoly dielectric for flash memory cells and method for fabricating the same using a single wafer low temperature deposition process |
| 03/11/2004 | US20040046217 Reliable semiconductor device with high yields. The semiconductor device includes a silicon substrate, a gate insulating film formed on one main plane of a silicon substrate and mainly including zirconium oxide of hafnium |
| 03/11/2004 | US20040046216 Semiconductor device and method of manufacturing the same |
| 03/11/2004 | US20040046212 Semiconductor memory capable of being driven at low voltage and its manufacture method |
| 03/11/2004 | US20040046211 Semiconductor device, method for manufacturing the same, and liquid jet apparatus |
| 03/11/2004 | US20040046210 Non-volatile memory device having select transistor structure and sonos cell structure and method for fabricating the device |
| 03/11/2004 | US20040046209 When n-channel thin film transistors(TFTs) and p-channel TFTs are formed on a polycrystalline silicon film formed on a glass substrate, a process is included in which P-dopant or N-dopant is introduced at the same time to the channel region |
| 03/11/2004 | US20040046208 Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control |
| 03/11/2004 | US20040046207 Method to control device threshold of SOI MOSFET'S |
| 03/11/2004 | US20040046206 Gate structures in nonvolatile memory devices having curved side walls formed using oxygen pathways and methods of forming same |
| 03/11/2004 | US20040046205 EEPROM device and method for fabricating same |
| 03/11/2004 | US20040046204 Non-volatile memory device and method of forming the same |
| 03/11/2004 | US20040046202 Semiconductor device and method of fabricating the same |
| 03/11/2004 | US20040046199 Self-aligned lateral-transistor dram cell structure |
| 03/11/2004 | US20040046197 MIS capacitor and method of formation |
| 03/11/2004 | US20040046192 Process for fabricating a MOS transistor of short gate length and integrated circuit comprising such a transistor |
| 03/11/2004 | US20040046191 Semiconductor device including a high withstand voltage MOS transistor and a manufacturing method thereof. The semiconductor device according to the present invention includes a MOS transistor in which a second-conductivity type |
| 03/11/2004 | US20040046190 Semiconductor device and method for fabricating the same |
| 03/11/2004 | US20040046188 Static memory cell having independent data holding voltage |
| 03/11/2004 | US20040046187 Bipolar transistor, semiconductor device and method of manufacturing same |
| 03/11/2004 | US20040046186 Bipolar transistors and methods of manufacturing the same |
| 03/11/2004 | US20040046183 Vertical bipolar transistor formed using CMOS processes |
| 03/11/2004 | US20040046182 Bipolar transistors with vertical structures |
| 03/11/2004 | US20040046181 Thyristor structure and overvoltage protection configuration having the thyristor structure |
| 03/11/2004 | US20040046174 Semiconductor integrated circuit and fabrication method thereof |
| 03/11/2004 | US20040046173 Semiconductor device and method of manufacturing the same |
| 03/11/2004 | US20040046172 Thin film transistor structure and manufacturing method thereof |
| 03/11/2004 | US20040046171 Thin film transistor including polycrystalline active layer and method for fabricating the same |
| 03/11/2004 | US20040046164 Display unit, drive circuit, amorphous silicon thin-film transistor, and method of driving OLED |
| 03/11/2004 | US20040046101 CMOS APS with stacked avalanche multiplication layer which provides linear and logarithmic photo-conversion characteristics |
| 03/11/2004 | US20040046002 Self assembled nano-devices using DNA |
| 03/11/2004 | US20040045499 Source and drain elements |
| 03/11/2004 | US20040045354 Micromechanical inertial sensor |
| 03/11/2004 | DE10338252A1 Semiconductor device comprises an insulating film formed on a semiconductor substrate, a bit line surrounded by the insulating film, and a bit line covering layer protruding from the insulating film |
| 03/11/2004 | DE10311316A1 Halbleitereinrichtung mit einer Nitridschicht A semiconductor device comprising a nitride layer |
| 03/11/2004 | DE10241173A1 Halbleiterspeicher mit vertikalen Speichertransistoren in einer Zellenfeldanordnung mit 1-2F2-Zellen Semiconductor memory with vertical memory transistors in a cell array with 1-2F2 cells |
| 03/11/2004 | DE10240449A1 Verfahren zur Herstellung einer dielektrischen Schicht mit geringem Leckstrom, wobei eine erhöhte kapazitive Kopplung erzeugt wird A process for preparing a dielectric layer having a low leakage current, wherein an increased capacitive coupling is generated |
| 03/11/2004 | DE10240107A1 Edge end for a power semiconductor component comprises a semiconductor body, a first region of opposing conductivity type, a second region of a first conductivity type, a region of different conductivity type, and electrodes |
| 03/11/2004 | DE10240106A1 Ausbildung einer elektrischen Verbindung zwischen Strkturen in einem Halbleitersubstrat Forming an electrical connection between Strkturen in a semiconductor substrate, |
| 03/11/2004 | DE10238797A1 Power semiconductor diode comprises a semiconductor body of first conductivity type with a first zone of opposing conductivity type embedded in the semiconductor body and a second zone embedded in the first zone |
| 03/11/2004 | DE10238784A1 Nichtflüchtiges Halbleiterspeicherelement sowie zugehöriges Herstellungs- und Ansteuerverfahren Nonvolatile semiconductor memory device and associated manufacturing and driving |
| 03/11/2004 | DE10238721A1 Vorrichtung zur Messung einer Kraft, Vorrichtung zur Messung eines Drucks und Drucksensor Device for measuring a force device for measuring a pressure and pressure sensor |
| 03/10/2004 | EP1396890A1 Lateral junction type field effect transistor |
| 03/10/2004 | EP1396889A2 Electronic device substrate structure and electronic device |
| 03/10/2004 | EP1396882A2 Method of manufacturing an integrated electronic component and electric device incorporating such component |
| 03/10/2004 | EP1396881A1 Conductive thin film for semiconductor device, semiconductor device, and methods for producing them |
| 03/10/2004 | EP1396880A2 Doping method and semiconductor device fabricated using the method |
| 03/10/2004 | EP1396876A2 Method for transferring a semiconductor thin film on a flexible substrate |
| 03/10/2004 | EP1396867A1 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and use |
| 03/10/2004 | EP1396725A1 System and method for detecting biological and chemical material |
| 03/10/2004 | EP1396469A2 Semiconductor device with regions having different pore structure and method of fabrication |
| 03/10/2004 | EP1396031A1 Dmos with zener diode for esd protection |
| 03/10/2004 | EP1396030A2 Power semiconductor devices having laterally extending base shielding regions that inhibit base reach through and methods of forming same |
| 03/10/2004 | EP1396029A2 An intermediate manufacture for a dual gate logic device |
| 03/10/2004 | EP1396028A2 Transistor, method for producing an integrated circuit and method for producing a metal silicide layer |
| 03/10/2004 | EP1396027A1 Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same |
| 03/10/2004 | EP1396026A2 Dram cell arrangement with vertical mos transistors and method for the production thereof |
| 03/10/2004 | EP1396019A1 Thin film transistor self-aligned to a light-shield layer |
| 03/10/2004 | EP1396018A1 C implants for improved sige bipolar transistors yield |
| 03/10/2004 | EP1396015A1 Two-mask trench schottky diode |
| 03/10/2004 | EP1395992A2 Flash memory device with increase of efficiency during an apde (automatic program disturb after erase) process |
| 03/10/2004 | EP1395873A1 Active matrix display substrate |
| 03/10/2004 | EP1395872A1 Active plate |